1. A method of patterning a conductive layer, the method comprising:
transferring a substrate into a substrate processing region of a substrate processing chamber, wherein a portion of the substrate is the conductive layer;
flowing a sputtering gas into a sputtering generation region fluidly coupled to the substrate processing region while forming a sputtering plasma in the sputtering generation region, wherein the sputtering plasma is formed by applying a sputtering plasma power to form ions;
selectively removing portions of the conductive layer which are not covered by a patterned mask layer by bombarding exposed portions of the conductive layer with the ions accelerated towards the substrate with an accelerating potential, wherein the substrate is in the substrate processing region during the selective removal operation.
2. The method of claim 1 wherein the conductive layer comprises copper.
3. The method of claim 1 wherein the conductive layer consists essentially of copper.
4. The method of claim 1 wherein the conductive layer comprises at least one of iron, cobalt, magnesium, palladium, aluminum or platinum.
5. The method of claim 1 wherein the patterned mask layer comprises at least one of tantalum and tungsten.
6. The method of claim 1 wherein the patterned mask layer consists essentially of one or both of tantalum and tungsten.
7. The method of claim 1 wherein the patterned mask layer comprises at least one of tantalum oxide, tantalum nitride, tungsten oxide, tungsten nitride, rhenium or osmium.
8. The method of claim 1 wherein the sputtering generation region is in a separate compartment from the substrate processing region, wherein the sputtering generation region is differentially pumped relative to the substrate processing region yet fluidly coupled to the substrate processing region.
9. The method of claim 1 wherein the sputtering generation region is inside the substrate processing chamber.
10. The method of claim 1 wherein the sputtering plasma is attained by applying inductively-coupled power to the sputtering generation region.
11. The method of claim 1 wherein neither the sputtering gas nor the sputtering ions form chemical bonds with removed constituents of the conductive layer.
12. A method of patterning a conductive layer, the method comprising:
providing a patterned substrate having a conductive layer a patterned mask layer formed on the conductive layer, wherein the patterned substrate is in a substrate processing region of a substrate processing chamber;
flowing a sputtering gas into a sputtering generation region fluidly coupled to the substrate processing region while forming a sputtering plasma in the sputtering generation region, wherein the sputtering plasma is formed by applying a sputtering plasma power to form sputtering ions and wherein the sputtering generation region consists essentially of elements with atomic weights below ten atomic mass units;
selectively removing portions of the conductive layer which are not covered by the patterned mask layer by bombarding exposed portions of the conductive layer with the sputtering ions accelerated towards the substrate with an accelerating potential, wherein the substrate is in the substrate processing region during the selective removal operation.
13. The method of claim 12 wherein the sputtering generation region consists essentially of elements with atomic weights below six atomic mass units.
14. The method of claim 12 wherein the sputtering gas comprises at least one of helium and hydrogen (H2).
15. A method of patterning a copper layer, the method comprising:
flowing a sputtering gas into a sputtering generation region of the substrate processing chamber while forming a sputtering plasma in the substrate processing chamber, wherein the sputtering plasma is formed by applying a sputtering plasma power to form sputtering ions, wherein the sputtering gas consists essentially of one or more of atomic hydrogen (H), hydrogen (H2) and helium;
selectively removing portions of the copper layer which are not covered by a patterned mask layer formed on the conductive layer by bombarding exposed portions of the conductive layer with sputtering ions accelerated towards the substrate with an accelerating potential, wherein the patterned mask layer comprises tungsten or tantalum.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A thermosyphon cooling device comprising:
(a) an evaporator having a length between about 0.75 inches and about 3.5 inches, a width between about 0.75 inches and about 3.5 inches, and a height between about 0.5 inches and about 1.7 inches;
(b) a narrow condenser having a length between about 5.0 inches and about 15.0 inches, a width between about 0.2 inches and about 0.5 inches, and a height between about 1.0 inches and about 1.7 inches;
(c) a liquid coolant within said evaporator and condenser;
(d) at least one coolant pipe connecting said evaporator to said condenser, wherein said at least one coolant pipe is at or below the level of said liquid coolant; and
(e) at least one vapor pipe connecting said evaporator with said condenser, wherein said at least one vapor pipe is above the level of said liquid coolant.
2. The device of claim 1 further comprising a plurality of cooling fins attached to at least one side of said condenser and extending laterally from said condenser.
3. The device of claim 2 wherein said plurality of cooling fins are orientated at an angle between horizontal and vertical.
4. The device of claim 1 wherein said evaporator is attached to the top of a heat source.
5. The device of claim 4 wherein said heat source is a CPU.
6. The device of claim 1 further comprising one or more vertical evaporator fins within said evaporator, wherein said one or more evaporator fins are attached to the bottom of said evaporator and extend to or above the surface of said liquid coolant.
7. The device of claim 1 wherein said liquid coolant is acetone, ethanol, methanol or water.
8. The device of claim 1 wherein said device is made from copper, brass, aluminum, or a combination thereof.
9. The device of claim 1 wherein the height of said device is about 2.0 inches or less.
10. The device of claim 1 wherein said evaporator is between about 1.5 and about 2.0 inches wide, between about 1.5 and about 2.0 inches long, and between about 0.7 and 1.0 inches tall.
11. The device of claim 1 wherein said condenser is between about 8.0 and about 10.0 inches long, between about 0.2 and about 0.35 inches wide, and between about 1.25 and about 1.5 inches tall.
12. The device of claim 1 wherein said evaporator is between about 1.5 and about 2.0 inches wide, between about 1.5 and about 2.0 inches long, and between about 0.7 and 1.0 inches tall, and said condenser is between about 8.0 and about 10.0 inches long, between about 0.2 and about 0.35 inches wide, and between about 1.25 and about 1.5 inches tall.
13. A computer system comprising:
(a) a computer case, wherein said case has a width of about 17 inches or less, a height of 1.75 inches or less, and length of 28 inches or less;
(b) at least one heat source within said computer case; and
(c) at least one thermosyphon device within said computer case, said thermosyphon device comprising:
(i) an evaporator having a length between about 0.75 inches and about 3.5 inches, a width between about 0.75 inches and about 3.5 inches, and a height between about 0.5 inches and about 1.7 inches;
(ii) a narrow condenser having a length between about 5.0 inches and about 15.0 inches, a width between about 0.2 inches and about 0.5 inches, and a height between about 1.0 inches and about 1.7 inches;
(iii) a liquid coolant within said evaporator and condenser;
(iv) at least one coolant pipe connecting said evaporator to said condenser, wherein said at least one coolant pipe is at or below the level of said liquid coolant; and
(v) at least one vapor pipe connecting said evaporator with said condenser, wherein said at least one vapor pipe is above the level of said liquid coolant.
14. The computer system of claim 13 wherein said at least one thermosyphon device comprises one or more vertical evaporator fins within said evaporator, wherein said one or more evaporator fins are attached to the bottom of said evaporator and extend to or above the surface of said liquid coolant.
15. The computer system of claim 13 wherein said at least one thermosyphon device comprises a plurality of cooling fins attached to at least one side of said condenser and extending laterally from said condenser.
16. The computer system of claim 15 further comprising a fan or air blower suitable for causing airflow through said cooling fins.
17. The computer system of claim 13 comprising two thermosyphon devices within said case.
18. The computer system of claim 17 wherein said two thermosyphon devices comprises a plurality of cooling fins attached to at least one side of each condenser.
19. The computer system of claim 13 wherein said at least one heat source is a CPU.
20. The computer system of claim 13 wherein said evaporator is between about 1.5 and about 2.0 inches wide, between about 1.5 and about 2.0 inches long, and between about 0.7 and 1.0 inches tall, and said condenser is between about 8.0 and about 10.0 inches long, between about 0.2 and about 0.35 inches wide, and between about 1.25 and about 1.5 inches tall.