Author: claimsbot

1. A method for driving a piezoelectric ink jet head composed of:
a pressure chamber filled with an ink;
a nozzle that communicates with the pressure chamber and has an ink meniscus formed therein from the ink that fills the pressure chamber;
a piezoelectric element of transverse vibration mode that contracts in the direction of plane when subjected to a drive voltage applied thereto; and
an oscillator plate that is stacked on the piezoelectric element so as to constitute a drive section and deflects so as to decrease the volume of the pressure chamber as the piezoelectric element contracts in the direction of plane when a voltage is applied thereto, so as to pressurize the ink in the pressure chamber and discharge an ink droplet from the tip of the nozzle, and
wherein the piezoelectric ink jet head is operated by combining

(A) the step of applying a drive voltage to the piezoelectric element so that the piezoelectric element contracts in the direction of plane and the oscillator plate deflects, thereby decreasing the volume of the pressure chamber, and
(B) the step of removing the drive voltage applied to the piezoelectric element so that the contraction of the piezoelectric element in the direction of plane is canceled and consequently the deflection of the oscillator plate is canceled, thereby increasing the volume of the pressure chamber, thereby to discharge an ink droplet from the tip of the nozzle,
characterized in that the piezoelectric element is driven with a drive voltage waveform that has at least one of the following settings:

(a) time constant \u03c4UP of rise of the drive voltage in the process (A) is set in a range that satisfies the relation of the expression (i):
Ta(\u2212ln0.01)\u2266\u03c4UP\u2266Ta(\u2212ln0.25)\u2003\u2003(i)
with respect to the period Ta of the ensuing vibration of the drive section which is superposed on the vibration waveform of the volumetric velocity of ink in the head,
(b) time constant \u03c4DN of fall of the drive voltage in the process (B) is set in a range that satisfies the relation of the expression (ii):
Ta(\u2212ln0.01)\u2266\u03c1DN\u2266Ta(\u2212ln0.25)\u2003\u2003(ii)
with respect to the period Ta.
2. A method for driving the piezoelectric ink jet head of claim 1, wherein the piezoelectric ink jet head is operated as follows:
a constant drive voltage is continuously applied to the piezoelectric element during a period of standby so that the piezoelectric element is kept contracted in the direction of plane and the oscillator plate continues to deflect, thereby to maintain the pressure chamber in a state of decreased volume and, during a period of forming a dot,

(1) the drive voltage is removed immediately before forming the dot so as to cancel the contraction of the piezoelectric element and relieve the oscillator plate deflection, thereby increasing the volume of the pressure chamber and pulling the ink meniscus in the nozzle back toward the pressure chamber, then
(2) the drive voltage is applied again so as to cause the piezoelectric element to contract and the oscillator plate to deflect, thereby decreasing the volume of the pressure chamber and discharge an ink droplet through the tip of the nozzle.
3. A method for driving the piezoelectric ink jet head of claim 1, wherein the piezoelectric ink jet head is operated as follows:
the piezoelectric element in the state of standby is maintained in such a condition that drive voltage is not applied thereto, and
during a period of forming a dot,

(I) the drive voltage is applied immediately before forming the dot so as to cause the piezoelectric element to contract and the oscillator plate to deflect, thereby decreasing the volume of the pressure chamber, pushing the ink meniscus in the nozzle toward the tip of the nozzle and protruding the ink from the tip of the nozzle like a column, then
(II) the drive voltage is removed again so as to cancel the contraction of the piezoelectric element and cancel the deflection of the oscillator plate, thereby increasing the volume of the pressure chamber and pulling back the ink column that has been protruding from the tip of the nozzle into the nozzle, thereby separate an ink droplet.
4. A method for driving the piezoelectric ink jet head of claim 1, wherein the time constant \u03c4UP of rise of the drive voltage in the step (A) is set in a range defined by a relation of the expression (i-1):
Ta(\u2212ln0.05)\u2266\u03c4UP\u2266Ta(\u2212ln0.25)\u2003\u2003(i-1)
with respect to the period Ta.
5. A method for driving the piezoelectric ink jet head of claim 1, wherein the time constant \u03c4DN of fall of the drive voltage in the step (B) is set in a range that satisfies the relation of the expression (ii-1):
Ta(\u2212ln0.05)\u2266\u03c4DN\u2266Ta(\u2212ln0.25)\u2003\u2003(ii-1)
with respect to the period Ta.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A MOSFET comprising:
an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion;
a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer;
a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region;
a source region of the second conductivity type provided on a surface of the base region;
a gate insulating layer provided on the source region, the base region, the active region and the drain region; and
a gate electrode provided on the gate insulating layer.
2. A MOSFET of claim 1, wherein the gate insulating layer has a first part provided on the source region and a second part provided on the drain region, and the second part of the gate insulating layer is thicker than the first part of the gate insulating layer.
3. A MOSFET of claim 1, wherein the gate insulating layer extends to further in a direction from the source region to the drain region than the gate electrode.
4. A MOSFET of claim 1, further comprising, a contact region being in contact with the drain region and having a higher impurity concentration than the drain region.
5. A MOSFET of claim 4, wherein the gate insulating layer extends to a region on the contact region.
6. A MOSFET of claim 4, wherein the gate electrode extends to a region on the contact region.
7. A MOSFET of claim 5, wherein the gate electrode extends to a region on the contact region.
8. A MOSFET of claim 7, wherein the gate insulating layer extends to further in a direction from the source region to the drain region than the gate electrode.
9. A MOSFET of claim 1, wherein the gate insulating layer has a substantially uniform thickness.
10. A MOSFET of claim 1, wherein the gate insulating layer extends to a region on the drain region.
11. A MOSFET comprising:
an active region of a first conductivity type provided on an insulating layer, the active region having a first portion, a second portion, the first portion being thicker than the second portion;
a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer;
a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region;
a contact region being in contact with the drain region and having a higher impurity concentration than the drain region, a part of the contact region being thicker than the second portion of the active layer;
a source region of the second conductivity type provided on a surface of the base region;
a gate insulating layer provided on the source region, the base region, the active region and the drain region; and
a gate electrode provided on the gate insulating layer.
12. A MOSFET of claim 11, wherein the gate insulating layer has a first part provided on the source region and a second part provided on the drain region, and the second part of the gate insulating layer is thicker than the first part of the gate insulating layer.
13. A MOSFET of claim 11, wherein the gate insulating layer extends to further in a direction from the source region to the drain region than the gate electrode.
14. A MOSFET of claim 11, wherein the gate insulating layer extends to a region on the contact region.
15. A MOSFET of claim 11, wherein the gate electrode extends to a region on the contact region.
16. A MOSFET of claim 14, wherein the gate electrode extends to a region on the contact region.
17. A MOSFET of claim 16, wherein the gate insulating layer extends to further in a direction from the source region to the drain region than the gate electrode.
18. A MOSFET of claim 11, wherein the gate insulating layer has a substantially uniform thickness.
19. A MOSFET of claim 11, wherein the gate insulating layer extends to a region on the drain region.
20. A MOSFET of claim 1, further comprising: a transitional portion provided in the active region between the first portion and the second portion, the transitional portion being thinner than the first portion and thicker than the second portion.

1. A telescoping pullout guide for a pullout, the pullout guide configured to be extensible and retractable in a furniture body or household appliance body, the telescoping pullout guide comprising:
a guide rail configured to be fixed on the furniture body or household appliance body;
a fastener to fix the guide rail to the furniture body or household appliance body;
an angled web forming a connection between the guide rail and the fastener, the angled web engaging perforations of the fastener and overlapping an adjoining edge area of the perforations; and
a securing web of the fastener is inserted into an opening of the guide rail.
2. The telescoping pullout guide according to claim 1, wherein the angled web is formed by shaping of a notch in the guide rail.
3. The telescoping pullout guide according to claim 2, wherein the angled web is formed by shaping from a lower leg of the guide rail.
4. The telescoping pullout guide according to claim 1, wherein a free leg of the angled web overlaps an area of the fastener adjoining the perforation.
5. The telescoping pullout guide according to claim 1, wherein the connection between the fastener and the guide rail includes at least two spaced-apart angled webs.
6. The telescoping pullout guide according to claim 4, wherein an end area of the free leg of the angled web is angled to form an insertion bevel.
7. The telescoping pullout guide according to claim 1, wherein the securing web runs transversely to a central longitudinal axis of the guide rail.
8. The telescoping pullout guide according to claim 1, wherein the security web is formed by deformation of an area provided between two punched-out areas provided in the fastener and it engages in an opening of the guide rail.
9. The telescoping pullout guide according to claim 1, wherein the fastener is formed as a fastening angle.
10. The telescoping pullout guide according to claim 1, wherein the fastener is formed as a holding plate whose edge areas are fixed on side walls of the furniture body or the household appliance body.
11. The telescoping pullout guide according to claim 10, wherein the holding plate includes perforations in which the angled web engages in edge areas of the holding plate.
12. The telescoping pullout guide according to claim 11, wherein the edge areas of the holding plate are each fixed on at least one holding web, which at least one holding web is attached or formed on the side walls of the furniture body or household appliance body.
13. The telescoping pullout guide according to claim 12, wherein the edge areas of the holding plate are fixed in one or both of a formfitting and friction-locked manner in a slot formed by two spaced-apart holding webs.
14. The telescoping pullout guide according to claim 10, wherein a connection between the holding plate and the guide rail is formed by the angled web.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for bonding a CMOS wafer and a MEMS wafer, the CMOS wafer including an integrated circuit, the MEMS wafer including a MEMS device, the method comprising:
depositing a germanium bonding layer on the MEMS wafer;
forming a substantially aluminum bonding layer on the CMOS wafer, wherein the CMOS wafer is placed in a first chuck and the MEMs wafer is placed in a second chuck;
aligning CMOS wafer and the MEMS wafer; and
forming a eutectic bond between the germanium bonding layer on the MEMS wafer and the substantially aluminum metalization bonding layer on the CMOS wafer, wherein the eutectic bond is formed by keeping the CMOS wafer and the MEMS wafer apart until the temperature on each of the top and bottom chucks reaches a first predetermined temperature that is less than 450\xb0 C., inducing forming gas at an atmospheric pressure prior to bonding, providing a vacuum to remove the forming gas, applying a uniform force across the first chuck and the second chuck, and then ramping the temperature over the eutectic point of the aluminumgermanium bond to a second predetermined temperature that is less than 500\xb0 C. for a period not to exceed thirty minutes.
2. The method of claim 1 wherein the CMOS wafer and the MEMs wafer is cleaned before forming the eutectic bond.
3. The method of claim 2, wherein cleaning the CMOS wafer and the MEMS wafer comprises one or more of:
dipping the CMOS wafer and the MEMS wafer in deionized water;
dipping the CMOS wafer and the MEMS wafer in a 50:1 HF solution;
placing the CMOS wafer and the MEMS wafer in a dump rinse; and
placing the CMOS wafer and the MEMS wafer through a spin-rinse-dry process.
4. The method of claim 1, wherein the substantially aluminum metalization bonding layer on the CMOS wafer is a ratio mix of 97.5:2:.5 Al:Si:Cu (Aluminum:Silicon:Copper)
5. The method of claim 1, wherein forming a eutectic bond includes creating a hermetic seal between the CMOS wafer and the MEMS wafer.
6. The method of claim 1 wherein the first predetermined temperature is approximately 420\xb0 C.
7. The method of claim 1 wherein the second predetermined temperature is approximately 450\xb0 C.
8. The method of claim 1 wherein the MEMS layer is doped to provide an ohmic contact to the CMOS once the aluminumgermanium eutectic bond is formed.
9. The method of claim 1 wherein the forming gas is utilized to deoxidize the surfaces of the germanium layer and the aluminum layer to initiate the reflow process of aluminumgermanium eutectic bond.
10. The method of claim 1 wherein the germanium layer can be deposited on a MEMS substrate layer that is highly doped such that the resulting contact with the CMOS wafer is an ohmic contact.