1. A mobile station apparatus that receives transmission signals in a plurality of frequency bands which are transmitted from one or more base station apparatusapparatuses and are different from each other, the mobile station apparatus comprising:
a plurality of reception branches that performs a reception process for each of said frequency bands; and
a reception-signal processing control section that performs control of switching a reception branch in operation to a reception branch that corresponds to a frequency band of a handover destination indicated by a handover command message that has been received from said base station apparatus and indicates a start of handover,
wherein said mobile station apparatus performs handover by:
stopping a reception branch that corresponds to a frequency band of a handover source indicated by said handover command message; and
operating the reception branch that corresponds to the frequency band of the handover destination indicated by the handover command message.
2. The mobile station apparatus according to claim 1, wherein said mobile station apparatus determines that a frequency band which corresponds to a reception branch having received said handover command message is the frequency band of the handover source.
3. The mobile station apparatus according to claim 1, wherein, based on said handover command message, said mobile station apparatus determines that one of the frequency bands other than the frequency band which corresponds to the reception branch having received the handover command message is the frequency band of the handover source.
4. The mobile station apparatus according to claim 1, wherein said mobile station apparatus transmits a handover complete message indicating completion of handover, in a frequency band indicated by said handover command message.
5. The mobile station apparatus according to claim 1, wherein said mobile station apparatus transmits a handover complete message indicating completion of handover, in a frequency band indicated by control information included in a response of a random access channel.
6. The mobile station apparatus according to claim 1, wherein said mobile station apparatus determines that a frequency band where all of said reception branches are receiving a transmission signal is a frequency band of the handover source.
7. The mobile station apparatus according to claim 1,
wherein, based on said handover command message, said mobile station apparatus determines whether transmission of a random access channel is necessary at handover, and
wherein, as a result of said determination, if transmission of the random access channel is unnecessary, then said mobile station apparatus performs handover, omitting a random access procedure, and if transmission of the random access channel is necessary, then said mobile station apparatus performs handover with a random access procedure.
8. A base station apparatus that performs radio communication with a mobile station apparatus that receives transmission signals in a plurality of frequency bands different from each other,
wherein said base station apparatus transmits, to a mobile station apparatus having transmitted a measurement report message indicating that a handover condition has been satisfied, a handover command message which indicates a start of handover and which includes control information specifying a downlink frequency band of a handover destination and control information specifying an uplink frequency band for transmitting a handover complete message that notifies completion of handover.
9. The base station apparatus according to claim 8,
wherein said base station apparatus determines whether or not a random access procedure is necessary for the mobile station apparatus having transmitted the measurement report message indicating that a handover condition has been satisfied, and, based on said determination, transmits, to said mobile station apparatus, the handover command message which indicates a start of handover and which includes control information specifying whether or not the random access procedure is necessary.
10. The base station apparatus according to claim 9,
wherein said base station apparatus notifies said mobile station apparatus of unnecessity of a random access procedure, by having the handover command message include a random access unnecessity identifier.
11. The base station apparatus according to claim 9,
wherein said base station apparatus reserves a part of dedicated preamble numbers, specifies said dedicated preamble number by the handover command message, and thereby notifies said mobile station apparatus of unnecessity of a random access procedure.
12. The base station apparatus according to claim 9,
wherein said base station apparatus has the handover command message include the same frequency identifier as a frequency identifier allocated to a downlink frequency band that said mobile station apparatus is receiving, and thereby notifies said mobile station apparatus of unnecessity of a random access procedure.
13. The base station apparatus according to claim 9,
wherein said base station apparatus has the handover command message include the same mobile station apparatus ID as a mobile station apparatus ID that said mobile station apparatus is using, and thereby notifies said mobile station apparatus of unnecessity of a random access procedure.
14. The base station apparatus according to claim 9,
wherein said base station apparatus specifies, by the handover command message, the same uplink frequency band as one of uplink frequency bands that said mobile station apparatus has been accessing before the handover, and thereby notifies said mobile station apparatus of unnecessity of a random access procedure.
15. A handover method for a mobile station apparatus that receives transmission signals in a plurality of frequency bands which are transmitted from one or more base station apparatusapparatuses and are different from each other, the method comprising the steps of:
performing control of switching a reception branch in operation among a plurality of reception branches that performs a reception process for each of said frequency bands, to a reception branch that corresponds to a frequency band of a handover destination indicated by a handover command message that has been received from said base station apparatus and indicates a start of handover;
stopping the reception branch that corresponds to the frequency band of the handover destination indicated by said handover command message; and
operating the reception branch that corresponds to the frequency band of the handover destination indicated by the handover command message to thereby perform handover.
16. (canceled)
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a semiconductor device, comprising:
forming a masking layer over a silicon layer, the masking layer having openings through which surface areas of the silicon layer are exposed;
isotropically etching the silicon layer through the masking layer openings so as to remove bowl-shaped portions of the silicon layer, each bowl-shaped portion having a middle portion and outer portions extending directly underneath the masking layer, the outer portions forming outer sections of corresponding trenches;
removing additional portions of the silicon layer through the masking layer openings so as to form a middle section of the trenches which extends deeper into the silicon layer than the outer sections of the trenches;
forming a first doped region of a first conductivity type in an upper portion of the silicon layer;
forming an insulating layer within each trench, the insulating layer in each trench extending directly over a portion of the first doped region adjacent each trench sidewall; and
removing silicon from adjacent each trench until, of the first doped region, only the portions adjacent the trench sidewalls remain, the remaining portions of the first doped region adjacent the trench sidewalls forming source regions which are self-aligned to the trenches.
2. The method of claim 1 wherein a top surface of the insulating layer is substantially coplanar with a top surface of the first doped region.
3. The method of claim 1 wherein the step of removing exposed silicon forms a contact opening between every two adjacent trenches.
4. The method of claim 3 further comprising: prior to forming the first doped region, forming a second doped region of a second conductivity type in the upper portion of the silicon layer.
5. The method of claim 4 further comprising: implanting dopants through the contact openings to form a heavy body region of a second conductivity type in the second doped region.
6. The method of claim 5 further comprising: forming a metal layer to electrically contact the source regions and the heavy body region through the contact opening.
7. The method of claim 1 further comprising: prior to forming the insulating layer, forming a gate electrode partially filling each trench.
8. A method of fabricating a semiconductor device, comprising:
forming a masking layer over a silicon layer, the masking layer having openings through which surface areas of the silicon layer are exposed;
isotropically etching the silicon layer through the masking layer openings so as to remove bowl-shaped portions of the silicon layer, each bowl-shaped portion having a middle portion and outer portions extending directly underneath the masking layer, the outer portions forming outer sections of corresponding trenches;
removing additional portions of the silicon layer through the masking layer openings so as to form a middle section of the trenches which extends deeper into the silicon layer than the outer sections of the trenches;
forming a gate electrode partially filling each trench;
forming a first doped region of a first conductivity type in an upper portion of the silicon layer;
forming an insulating layer within each trench such that a top surface of the insulating layer is substantially coplanar with a top surface of the first doped region, each trench having a contour such that the insulating layer in each trench extends directly over a portion of the first doped region adjacent each trench sidewall; and
removing exposed silicon from between adjacent trenches such that: 1) a contact opening is formed between every two adjacent trenches, and 2) of the first doped region, only the portion adjacent each trench sidewall remains, the portion of the first doped region remaining adjacent each trench sidewall forming a source region.
9. The method of claim 8 wherein the step of removing exposed silicon is carried out without using a mask so that the contact opening between every two adjacent trenches and the portion of the first doped region remaining adjacent each trench sidewall are self-aligned.
10. The method of claim 8 further comprising: prior to forming the first doped region, forming a second doped region of a second conductivity type in the upper portion of the silicon layer.
11. The method of claim 10 further comprising: implanting dopants through the contact openings to form a heavy body region of a second conductivity type in the second doped region between adjacent trenches.
12. The method of claim 11 further comprising: forming a metal layer to electrically contact the source regions and the heavy body region through the contact opening.