Author: claimsbot

1. A system for dispensing a colored polymerizing composition, the system comprising:
(a) a first tank comprising a first reactive component;
(b) a second tank comprising a second reactive component;
(c) a paint pot comprising a color component;
(d) a dispensing device in fluid communication with the first tank, second tank and paint pot for mixing the first reactive component, second reactive component and color component to produce a colored mixture; and for dispensing the colored mixture from the dispensing device onto a surface to be coated.
2. The system according to claim 1, wherein the dispensing device comprises a dispenser containing a mixing chamber.
3. The systems according to claim 1, wherein the dispensing device comprises a dispenser and a mixing chamber in fluid communication with each other, the mixing chamber abutting the dispenser.
4. The system according to claim 2, wherein the dispenser comprises an atomizer.
5. The system according to claim 3, wherein the dispenser comprises an atomizer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An electronic component, comprising
a mounting board,
a bump which is located on a mounting surface of the mounting board, and
an acoustic wave device which is located on the bump and is connected to the bump, wherein
the acoustic wave device comprises
an element substrate,
an excitation electrode which is located on a primary surface of the element substrate,
a pad which is located on the primary surface and is connected to the excitation electrode, and
a cover which is located above the excitation electrode and which is formed with a pad exposure portion exposing the pad and comprised of a hole portion or a cut away portion or a combination of the same, wherein
the top surface of the cover is made to face the mounting surface, the bump is located in the pad exposure portion, and the pad is contacted to the bump.
2. The electronic component according to claim 1, further comprising
a mold resin covering the acoustic wave device, wherein

the mold resin is filled between the top surface of the cover and the mounting surface, and between the bump and an inner circumferential surface of the pad exposure portion.
3. The electronic component according to claim 2, wherein
the cover comprises
a ring shaped frame section which is located on the primary surface of the element substrate and surrounds the excitation electrode, and
a lid section which is superimposed on the frame section and closes the frame section,

the pad exposure portion comprises
a first pad exposure portion which is formed in the frame section and is comprised of a hole portion or a cut away portion, and
a second pad exposure portion which is formed in the lid section so as to be communicated with the first pad exposure portion part and is comprised of a hole portion or a cut away portion, and
at least one of an inner surface of the first pad exposure portion and an inner surface of the second pad exposure portion is inclined in a direction whereby it becomes broader the closer to the top surface side of the cover.
4. The electronic component according to claim 2, wherein
the cover comprises
a ring shaped frame section which is located on the primary surface of the element substrate and surrounds the excitation electrode, and
a lid section which is superimposed on the frame section and closes the frame section,

the pad exposure portion comprises
a first pad exposure portion which is formed in the frame section and is comprised of a hole portion or a cut away portion, and
a second pad exposure portion which is formed in the lid section so as to be communicated with the first pad exposure portion and is comprised of a hole portion or a cut away portion, and
at least one of the inner surface of the first pad exposure portion and the inner surface of the second pad exposure portion is inclined in a direction whereby it becomes narrower the closer to the top surface side of the cover.
5. The electronic component according to claim 4, wherein
the inner surface of the second pad exposure portion is inclined in a direction whereby it becomes narrower than the closer to the top surface side of the cover, and
the acoustic wave device further comprises a reinforcing layer which is superimposed on the top surface of the cover, superimposed on the inner side of the frame section in a plan view and is made of a material having a higher Young’s modulus than that of the cover.
6. The electronic component according to claim 2, wherein
the cover comprises
a ring shaped frame section which is located on the primary surface of the element substrate and surrounds the excitation electrode, and
a lid section which is superimposed on the frame section and closes the frame section,

the pad exposure portion comprises
a first pad exposure portion which is formed in the frame section and is comprised of a hole portion or a cut away portion, and
a second pad exposure portion which is formed in the lid section so as to be communicated with the first pad exposure portion and is comprised of a hole portion or a cut away portion,

the inner surface of the first pad exposure portion is inclined in a direction whereby it becomes broader the closer to the top surface side of the cover, and
the inner surface of the second pad exposure portion is inclined in a direction whereby it becomes narrower the closer to the top surface side of the cover.
7. The electronic component according to claim 3, wherein
the mold resin is filled from the first pad exposure portion up to the second pad exposure portion, and
an opening area in the narrowest portion of the second pad exposure portion is larger than an opening area in the broadest portion of the first pad exposure portion.
8. The electronic component according to claim 3, wherein
the second pad exposure portion is comprised of a notch which is communicated with the outside of a side surface of the cover.
9. The electronic component according to claim 1, wherein
a plurality of the pad exposure portions are provided in a plan view of the top surface of the cover, and
at least portion of the pad exposure portions among the plurality of pad exposure portions are connected with each other in the portion on the top surface side of the cover.
10. An acoustic wave device, comprising
an element substrate,
an excitation electrode which is located on a primary surface of the element substrate,
a pad which is located on the primary surface and is connected to the excitation electrode, and
a cover which is located above the excitation electrode, which is formed with pad exposure portion exposing the pad and comprised of a hole portion or a cut away portion or a combination of the same, wherein
the pad exposure portion is communicated with the outside of the side surface of the cover at the top surface side portion of the cover.
11. An acoustic wave device, comprising
an element substrate,
an excitation electrode which is located on a primary surface of the element substrate,
a plurality of pads which are located on the primary surface and are connected to the excitation electrode, and
a cover which is located above the excitation electrode and which is formed with pad exposure portions exposing the plurality of pads and comprised of hole portions or cut away portions or combinations of the same, wherein

at least portion of the plurality of pad exposure portions are connected with each other at the top surface side portion of the cover.
12. The acoustic wave device according to claim 10, wherein
the cover comprises
a ring shaped frame section which is located on the primary surface of the element substrate and surrounds the excitation electrode, and
a lid section which is superimposed on the frame section and closes the frame section, and
the frame section comprises a projection which projecting outward from the outer periphery of the lid section in a plan view.
13. The acoustic wave device according to claim 10, wherein
the cover comprises
a ring shaped frame section which is located on the primary surface of the element substrate and surrounds the excitation electrode, and
a lid section which is superimposed on the frame section and closes the frame section,

the frame section comprises a first edge portion being a rounded edge portion,
the lid section comprises a second edge portion located diagonally upward from the first edge portion and being a rounded edge portion, and

the outer periphery of the second corner portion is located on an inner side from the outer periphery of the first corner portion, and a curvature radius of the second corner portion is larger than a curvature radius of the first corner portion.

1. A semiconductor device comprising:
a first substrate including first, second and third layers; and
a second substrate including fourth to sixth layers;
wherein the first substrate provides an electric device,
wherein the second substrate provides a physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the second layer of the first substrate is an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein the sixth layer of the second substrate faces the third layer of the first substrate,
wherein the physical quantity sensor includes a movable portion, which is provided by the sixth layer of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with a loop bump so that the movable portion is shielded.
2. The device according to claim 1,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion so that the first loop layer, the first layer and the second substrate shields the electric device and the physical quantity sensor,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the fourth to sixth layers of the second substrate are stacked in this order,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the bump.
3. A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate includes fourth to sixth layers; and
a bump,
wherein the first substrate provides an electric device,
wherein the second substrate provides a physical quantity sensor,
wherein the first layer of the first sub state is a shield for protecting the electric device and the physical quantity sensor,
wherein the electric device is disposed in the third layer of the first substrate,
wherein the physical quantity sensor is disposed in the sixth layer of the second substrate,
wherein the second layer of the first substrate is made of an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein the physical quantity sensor includes a movable portion, which is provided by the sixth layer of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs a signal corresponding to a displacement of the movable portion,
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor,
wherein the bump is disposed between the third layer of the first substrate and the sixth layer of the second substrate,
wherein the first layer of the first substrate and the fourth layer of the second substrate are disposed outside, the fourth layer of the second substrate being apposite to the physical quantity sensor,
wherein the sixth layer of the second substrate faces the third layer of the first substrate so that the first substrate is electrically connected to the second substrate through the bump,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with a loop bump so that the movable portion is shielded.
4. The device according to claim 3,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion so that the first loop layer, the first layer and the second substrate shields the electric device and the physical quantity sensor,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the bump.
5. A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate; and
a loop bump,
wherein the first substrate provides one of an electric device and a physical quantity sensor,
wherein the second substrate provides the other one of the electric device and the physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the physical quantity sensor includes a movable portion,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion,
wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,
wherein the loop bump is electrically coupled with the first loop layer so that the loop bump, the first loop layer, the first layer and the second substrate shield the electric device and the physical quantity sensor,
wherein the first substrate further includes and inner pad, and outer pad, and wire layer,
wherein the inner pad is disposed inside of the first loop layer, and the outer pad is disposed outside of the first loop layer,
wherein the inner pad is electrically coupled with the outer pad through the wire layer so that a signal from the movable portion is output to and external circuit, and
wherein the wire layer is electrically insulated from the loop bump with an insulation film.
6. The device according to claim 5,
wherein the first layer is grounded.
7. The device according to claim 5,
wherein the one of the electric device and the physical quantity sensor is disposed in the third layer of the first substrate,
wherein the other one of the electric device and the physical quantity sensor is disposed one side of the second substrate, and
wherein the second layer of the first substrate is made of and insulation layer so that the first and third layers are electrically isolated.
8. The device according to claim 7,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs the signal corresponding to a displacement of the movable portion, and
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor.
9. The device according to claim 8,
wherein the first substrate includes a bump disposed on the third layer of the first substrate,
wherein the third layer of the first substrate faces the second substrate so that the first substrate is electrically connected to the second substrate through the bump, and
wherein the first layer of the first substrate and the other side of the second substrate are disposed outside, the other side of the second substrate being opposite to the other one of the electric device and the physical quantity sensor.
10. The device according to claim 9,
wherein the first and third layers of the first substrate are made of semiconductor,
wherein the second substrate is made of semiconductor, and
wherein the electric device controls the physical quantity sensor, and the physical quantity sensor outputs the signal to the electric device though the bump.
11. The device according to claim 10,
wherein the physical quantity sensor is an acceleration sensor, an angular rate sensor or a pressure sensor,
wherein the first substrate is provided by a silicon-on-insulator substrate, and
wherein the electric device is a signal processor.
12. A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate;
a loop bump; and
a bump,
wherein the first substrate provides one of an electric device and a physical quantity sensor,
wherein the second substrate provides the other one of the electric device and the physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the one of the electric device and the physical quantity sensor is disposed in the third layer of the first substrate,
wherein the other one of the electric device and the physical quantity sensor is disposed in one side of the second substrate,
wherein the second layer of the first substrate is made of an insulation layer so that the first and third layers are electrically isolated,
wherein the physical quantity sensor includes a movable portion,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs a signal corresponding to a displacement of the movable portion,
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor,
wherein the bump is disposed between the third layer of the first substrate and the one side of the second substrate,
wherein the third layer of the first substrate faces the second substrate so that the first substrate is electrically connected to the second substrate through the bump,
wherein the first layer of the first substrate and the other side of the second substrate are disposed outside the other side of the second substrate being opposite to the other one of the electric device and the physical quantity sensor,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion,
wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,
wherein the loop bump is electrically coupled with the first loop layer so that the loop bump, the first loop layer, the first layer and the second substrate shield the electric device and the physical quantity sensor,
wherein the first substrate further includes an inner pad, an outer pad and a wire layer,
wherein the inner pad is disposed inside of the first loop layer, and the outer pad is disposed outside of the first loop layer,
wherein the inner pad is electrically coupled with the outer pad through the wire layer so that the signal from the movable portion is output to an external circuit, and
wherein the wire layer is electrically insulated from the loop bump with an insulation film.
13. The device according to claim 5,
wherein the second layer of the first substrate is an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein one side of the second substrate faces the third layer of the first substrate,
wherein the movable portion of the physical quantity sensor is provided by the one side of the second substrate so tat the movable portion is sandwiched by the first and second substrates,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with the loop bump so that the movable portion is shielded.
14. The device according to claim 13,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the loop bump.
15. The device according to claim 12,
wherein the first substrate is provided by a silicon-on-insulator substrate,
wherein the one side of the second substrate faces the third layer of the first substrate,
wherein the movable portion of the physical quantity sensor is provided by the one side of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with the loop bump so that the movable portion is shielded.
16. The device according to claim 15,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the loop bump.
17. A semiconductor device comprising:
a first substrate including first, second and third layers;
a second substrate; and
a loop bump,
wherein the first substrate provides one of an electric device and a physical quantity sensor,
wherein the second substrate provides the other one of the electric device and the physical quantity sensor,
wherein the first layer of the first substrate is a shield for protecting the electric device and the physical quantity sensor,
wherein the physical quantity sensor includes a movable portion,
wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,
wherein the first substrate further includes an inner pad, an outer pad and a wire layer,
wherein the inner pad is disposed inside of the loop bump, and the outer pad is disposed outside of the loop bump,
wherein the inner pad is electrically coupled with the outer pad through the wire layer, and
wherein the wire layer is electrically insulated from the loop bump with an insulation film.
18. The device according to claim 17,
wherein the first layer is grounded.
19. The device according to claim 17,
wherein the one of the electric device and the physical quantity sensor is disposed in the third layer of the first substrate,
wherein the other one of the electric device and the physical quantity sensor is disposed one side of the second substrate, and
wherein the second layer of the first substrate is made of an insulation layer so that the first and third layers are electrically isolated.
20. The device according to claim 19,
wherein the movable portion is movable in accordance with a physical quantity applied to the device so that the physical quantity sensor outputs the signal corresponding to a displacement of the movable portion, and
wherein the first substrate faces the second substrate so that the electric device electrically connects to the physical quantity sensor.
21. The device according to claim 20,
wherein the first substrate includes a bump disposed on the third layer of the first substrate,
wherein the third layer of the first substrate faces the second substrate so that the first substrate is electrically connected to the second substrate through the bump, and
wherein the first layer of the first substrate and the other side of the second substrate are disposed outside, the other side of the second substrate being opposite to the other one of the electric device and the physical quantity sensor.
22. The device according to claim 21,
wherein the first and third layers of the first substrate are made of semiconductor,
wherein the second substrate is made of semiconductor, and
wherein the electric device controls the physical quantity sensor, and the physical quantity sensor outputs the signal to the electric device through the bump.
23. The device according to claim 22,
wherein the physical quantity sensor is an acceleration sensor, an angular rate sensor or a pressure sensor,
wherein the first substrate is provided by a silicon-on-insulator substrate, and
wherein the electric device is a signal processor.
24. The device according to claim 17,
wherein the second layer of the first substrate is an insulation layer so that the first substrate is provided by a silicon-on-insulator substrate,
wherein one side of the second substrate faces the third layer of the first substrate,
wherein the movable portion of the physical quantity sensor is provided by the one side of the second substrate so that the movable portion is sandwiched by the first and second substrates,
wherein the third layer of the first substrate includes a first loop layer, which surrounds the movable portion,
wherein the second substrate further includes a second loop layer, which surrounds the movable portion, and
wherein the second loop layer is electrically connected to the third layer of the first substrate with the loop bump so that the movable portion is shielded.
25. The device according to claim 24,
wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,
wherein the second substrate further includes fourth to sixth layers, which are stacked in this order,
wherein the sixth layer of the second substrate provides the one side of the second substrate, and the fourth Layer of the second substrate provides the other side of the second substrate,
wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,
wherein the first loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,
wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,
wherein the first loop layer is electrically coupled with the first poly crystalline silicon layer, and the second loop layer is electrically coupled with the second poly crystalline silicon layer, and
wherein the first loop layer is electrically coupled with the second loop layer with the loop bump.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for manufacturing a polymer electrolyte fuel cell, comprising the steps of
(i) adsorbing a first polymer electrolyte to first carbon particles supporting a catalyst in a first dispersion in which said first polymer electrolyte is dispersed;
(ii) adsorbing a second polymer electrolyte to second carbon particles supporting a catalyst in a second dispersion in which said second polymer electrolyte is dispersed, wherein said first and said second polymer electrolytes may be the same or different;
(iii) preparing a catalyst layer ink by mixing said first and second dispersions; and
(iv) forming a catalyst layer from said catalyst layer ink; and further comprising the step of
(v) adjusting a particle size of at least one of said first and second polymer electrolytes by mixing a first solvent in which said polymer electrolyte is dispersed with a second solvent having a dielectric constant different from that of said first solvent before adsorbing said polymer electrolyte to said carbon particles in at least one of said first and second dispersions.
2. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 1, wherein a solvent of said first dispersion is a mixture of an alcohol and a second solvent having no hydroxyl group, and
the step of adjusting the particle size of said polymer electrolyte is implemented by mixing an alcohol dispersion of said polymer electrolyte with said second solvent in which said first carbon particles are dispersed.
3. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 1, wherein said step (iv) is the step of forming a catalyst layer by applying said catalyst layer ink on one surface of a gas diffusion layer, thereby producing an electrode, and
said method further comprises the step of integrally joining the produced electrode to at least one surface of a polymer electrolyte membrane by application of pressure.
4. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 1, wherein said step (iv) is the step of forming a catalyst layer by applying said catalyst layer ink on at least one surface of a polymer electrolyte membrane, thereby forming a membrane-catalyst layer assembly, and
said method further comprises the step of integrally joining a gas diffusion layer to a catalyst layer side of said membrane-catalyst layer assembly by application of pressure.
5. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 4, wherein a surface tension of a dispersion medium of said catalyst layer ink is smaller than a critical surface tension of said polymer electrolyte membrane.
6. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 1, wherein said step (iv) includes the step of forming a catalyst layer by applying said catalyst layer ink on a transfer film and the step of forming a membrane-catalyst layer assembly by transferring said catalyst layer to at least one surface of a polymer electrolyte membrane, and
said method further comprises the step of integrally joining a gas diffusion layer to a catalyst layer side of said membrane-catalyst layer assembly by application of pressure.
7. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 6, wherein a surface tension of a dispersion medium of said catalyst layer ink is smaller than a critical surface tension of said transfer film.
8. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 1, comprising the step of dispersing the catalyst-supporting carbon particles in said catalyst layer ink so as to have a particle size distribution within a median diameter range of 0.1 to 3 \u03bcm.
9. The method for manufacturing a polymer electrolyte fuel cell as set forth in claim 1, comprising the step of applying hydrophilicity treatment to the carbon particles supporting the catalyst before adsorbing at least one of said first and second polymer electrolytes.