Author: claimsbot

1. A lighting system comprising:
a board;
a wiring pattern that is provided on a surface of the board and has a wiring pad;
a light emitting element that is provided on the wiring pattern and includes an electrode on a surface thereof opposite to a surface thereof provided on the wiring pattern;
a surrounding wall member that is provided to surround the light emitting element;
a wiring that connects the wiring pad and the electrode; and
a sealing portion that is provided inside the surrounding wall member and covers the light emitting element and the wiring,
wherein an angle that is formed by a segment that connects a central position of a portion of the board surrounded by the surrounding wall member and a position where the wiring is connected to the wiring pad, and the wiring is 0\xb0 to 45\xb0, or 135\xb0 to 180\xb0.
2. The system according to claim 1,
wherein a linear expansion coefficient of the surrounding wall member is equal to or less than a linear expansion coefficient of the sealing portion.
3. The system according to claim 1,
wherein a height from an upper surface of the light emitting element to an upper end of a loop of the wiring is equal to or less than 160 \u03bcm.
4. The system according to claim 1, further comprising:
a power supply terminal that is electrically connected to the wiring pattern; and
a socket that is fitted to the power supply terminal.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A server system, comprising:
a plurality of compute nodes to execute services for the server system; and
a management node to send configuration parameters to the plurality of compute nodes during bootstrap of the server system.
2. The server system of claim 1, wherein the management node is to send a first set of configuration parameters to a first compute node of the plurality of compute nodes and a second set of configuration parameters to a second compute node of the plurality of compute nodes during bootstrap of the server system, the second set of configuration parameters different than the first set of configuration parameters.
3. The server system of claim 1, wherein the management node is to receive status messages from the plurality of compute nodes and is to adjust the configuration parameters based on the status messages.
4. The server system of claim 1, wherein the management node is to send the configuration parameters to the plurality of compute nodes via a fabric interconnect used to communicate messages between compute nodes after bootstrap of the server system.
5. The server system of claim 1, wherein the management node is to send the configuration parameters to the plurality of compute nodes via a sideband network different than via a fabric interconnect used to communicate messages between compute nodes after bootstrap of the server system.
6. The server system of claim 1, wherein the management node is to receive a request from a compute node to change a configuration parameter and is to change the configuration parameter in response to the request based on a security policy.
7. The server system of claim 6, wherein the management node is to make a different change to the configuration parameter than the requested change based on the security policy.
8. The server system of claim 1, wherein a compute node of the plurality of compute nodes comprises:
a boot control module to intercept a request for a configuration parameter formatted to target a local memory of the compute node and to communicate a request for the configuration parameter to the management node.
9. The server system of claim 1, wherein the management node is to store a database of configuration parameters, the database to indicate a state of configuration parameters for each of the plurality of compute nodes and is to provide an interface to the database.
10. The server system of claim 9, wherein the management node is to store a database of status information to indicate a status for each of the plurality of compute nodes and responsive actions to take based on triggering events associated with the status information.
11. A server system, comprising:
a fabric interconnect to route messages;
a plurality of field replaceable units (FRUs) comprising compute nodes coupled to the fabric interconnect to execute services for the server system, each of the plurality of compute nodes to route received messages to others of the plurality of compute nodes; and
a first FRU comprising a management node coupled to the fabric interconnect to send configuration parameters to the plurality of compute nodes during bootstrap of the server system.
12. The server system of claim 11 wherein the management node is to send a first set of configuration parameters to a first compute node of the plurality of compute nodes and a second set of configuration parameters to a second compute node of the plurality of compute nodes during bootstrap of the server system, the second set of configuration parameters different than the first set of configuration parameters.
13. The server system of claim 11, wherein the management node is to receive status messages from the plurality of compute nodes and is to adjust the configuration parameters based on the status messages.
14. The server system of claim 11, wherein the management node is to send the configuration parameters to the plurality of compute nodes via a fabric interconnect used to communicate messages between compute nodes after bootstrap of the server system.
15. The server system of claim 11, wherein the management node is to send the configuration parameters to the plurality of compute nodes via a sideband network different than the fabric interconnect.
16. The server system of claim 11, wherein the management node is to receive a request from a compute node to change a configuration parameter and is to change the configuration parameter in response to the request based on a security policy.
17. The server system of claim 16, wherein the management node is to make a different change to the configuration parameter than the requested change based on the security policy.
18. A method, comprising:
receiving, at a management node of server system having a plurality of compute nodes, a request to boot the server system; and
in response to the request, communicating configuration parameters from the management node to the plurality of compute nodes during bootstrap of the server system.
19. The method of claim 18, wherein communicating configuration parameters comprises:
sending a first set of configuration parameters to a first compute node of the plurality of compute nodes; and
sending a second set of configuration parameters to a second compute node of the plurality of compute nodes, the second set of configuration parameters different than the first set of configuration parameters.
20. The method of claim 18, further comprising:
receiving at the management node status messages from the plurality of compute nodes; and
adjusting the configuration parameters based on the status messages.

1. An optical information recording medium having a multilayer structure comprising at least a lower protective layer, a phase-change type optical recording layer, an upper protective layer and a reflective layer, on a substrate, wherein the phase-change type optical recording layer has a composition of Zn1In1Sb1Te1, where 0.0110.1, 0.0310.08, 0.510.7, 0.2510.4, and 11111, whereby overwrite recording is carried out by modulation of light intensity of at least strong and weak two levels, so that a crystalline state is an unrecorded state, and an amorphous state is a recorded state.
2. An optical information recording medium having a multilayer structure comprising at least a lower protective layer, a phase-change type optical recording layer, an upper protective layer and a reflective layer, on a substrate, wherein the phase-change type optical recording layer has a composition of Zn2In2Ma2Sb2Te2, where Ma is at lest one member selected from Sn, Ge, Si and Pb, 0.0120.1, 0.00120.1, 0.0120.1, 0.520.7, 0.2520.4, 0.03220.15, and 222221, whereby overwrite recording is carried out by modulation of light intensity of at least strong and weak two levels, so that a crystalline state is an unrecorded state, and an amorphous state is a recorded state.
3. The optical information recording medium according to claim 2, wherein said Ma is Ge.
4. The optical information recording medium according to claim 1 or 2, wherein the phase-change type optical recording layer has a thickness of from 15 to 30 nm, the upper protective layer has a thickness of from 10 to 50 nm, and the reflective layer has a thickness of from 50 to 500 nm and is made of a metal containing at least 90 atomic % of Au, Ag or Al and having a volume resistivity of from 20 to 300 nm.
5. An optical information recording medium having a multilayer structure comprising at least a lower protective layer, a phase-change type optical recording layer, an upper protective layer and a reflective layer, on a substrate, for overwrite recording by modulation of light intensity of at least two levels, so that a crystalline state is an unrecorded state, and an amorphous state is a recorded state, wherein the phase-change type optical recording layer has a composition of MbzGey(SbxTe1x)1yz, where Mb is at least one member selected from Ag and Zn, 0.60×0.85, 0.01y0.20, and 0.01z0.15.
6. The optical information recording medium according to claim 5, wherein 0.65×0.80, 0.01y0.15, and 0.01z0.10.
7. The optical information recording medium according to claim 5, wherein the phase-change type optical recording layer has a thickness of from 15 to 30 nm, the upper protective layer has a thickness of from 10 to 50 nm, and the reflective layer has a thickness of from 50 to 500 nm and is made of a metal containing at least 90 atomic % of Au, Ag or Al.
8. The optical information recording medium according to claim 5, wherein the lower protective layer has a thickness of from 50 to 500 nm, of which a portion of from 1 to 10 nm on the side contacting the recording layer, is made of a mixture comprising a chalcogen compound and a heat resistant compound having a decomposition temperature or melting point of at least 1,000 C. which is not a chalcogen compound, and the rest is made of a heat resistant compound of a different or same type as said heat resistant compound.
9. The optical information recording medium according to claim 1, 2 or 5, wherein to carry out an initialization operation by irradiating an energy beam for crystallization, after forming the phase-change type optical recording layer, the recording layer is locally melted and crystallized during resolidification.
10. The optical information recording medium according to claim 1, 2 or 5, which is a recording medium whereby mark length modulation recording and erasing are carried out by modulating a laser power among at least 3 power levels wherein to form inter-mark portions, erasing power Pe capable of recrystallizing amorphous mark portions is applied, and to form mark portions having a length nT where T is a clock period and n is an integer of at least 2, writing power Pw and bias power Pb are applied in such a manner that when the time for applying writing power Pw is represented by 1T, 2T, . . . , mT, and the time for applying bias power Pb is represented by 1T, 2T, . . . , mT, the laser application period is divided into m pulses in a sequence of 1T, 1T, 2T, 2T, . . . , mT, mT, to satisfy the following formulae:
when 2im1, ii;
mnk, where k is an integer of 0k2, provided that nmink1, where nmin is the minimum value of n; and
11 . . . mmnj, where j is a real number of 0j2;
and under such conditions that Pw>Pe, and 0<Pb0.5Pe, provided that when im, 0<PbPe.
11. The optical information recording medium according to claim 10, wherein 0<Pb0.2Pe, provided that when i is m, 0<PbPe, and when 2im1, ii1.0, and 0.05<i0.5.
12. An optical recording method, which comprises carrying out mark length modulation recording and erasing on the optical information recording medium as defined in claim 1, 2 or 5 by modulating a laser power among at least 3 power levels, wherein to form inter-mark portions, erasing power Pe capable of recrystallizing amorphous mark portions is applied, and to form mark portions having a length nT where T is a clock period and n is an integer of at least 2, writing power Pw and bias power Pb are applied in such a manner that when the time for applying writing power Pw is represented by 1T, 2T, . . . , mT, and the time for applying bias power Pb is represented by 1T, 2T, . . . , mT, the laser application period is divided into m pulses in a sequence of 1T, 1T, 2T, 2T, . . . , mT, mT, to satisfy the following formulae:
when 2im1, ii;
mnk, where k is an integer of 0k2, provided that nmink1, where nmin is the minimum value of n; and
11 . . . mmnj, where j is a real number of 0j2;
and under such conditions that Pw>Pe, and 0<Pb0.5Pe, provided that when im, 0<PbPe.
13. The optical recording method according to claim 12, wherein 0<Pb0.2Pe, provided that when i is m, 0<PbPe, and when 2im1, ii1.0, and 0.05<i0.5.
14. An optical information recording medium having a multilayer structure comprising at least a lower protective layer, a phase-change type optical recording layer, an upper protective layer and a reflective layer, on a substrate, wherein the phase-change type optical recording layer has a composition of Gef(SbdTe1d)1f, where 0.60d0.85, and 0.01f0.20 and has a thickness of from 15 to 30 nm, the protective layer has a thickness of from 10 to 50 nm, and the reflective layer is made of a metal containing at least 90 atomic % of Au, Ag or Al and has a thickness of from 50 to 500 nm, whereby mark length modulation recording and erasing are carried out by modulating a laser power among at least 3 power levels at a linear velocity of from 1 to 7 ms, wherein to form inter-mark portions, erasing power Pe capable of recrystallizing amorphous mark portions with irradiation for less than 100 nanoseconds is applied, and to form mark portions having a length nT where T is a clock period and n is an integer of at least 2, writing power Pw and bias power Pb are applied in such a manner that when the time for applying writing power Pw is represented by 1T, 2T, . . . , mT, and the time for applying bias power Pb is represented by 1T, 2T, . . . , mT, the laser application period is divided into m pulses in a sequence of 1T, 1T, 2T, 2T, . . . , mT, mT, to satisfy the following formulae:
when 2im1, ii;
mnk, where k is an integer of 0k2, provided that nmink1, where nmin is the minimum value of n; and
11 . . . mmnj, where j is a real number of 0j2;
and under such conditions that Pw>Pe, and 0<Pb0.5Pe, provided that when im, 0<PbPe.
15. The optical information recording medium according to claim 14, wherein the upper protective layer has a thickness of from 10 nm to 30 nm.
16. The optical information recording medium according to claim 14, wherein 0.65d0.75, and 0.02f0.15, and recording is carried out at a linear velocity of from 2 to 7 ms.
17. The optical information recording medium according to claim 14, wherein to carry out an initialization operation by irradiating an energy beam for crystallization, after forming the phase-change type optical recording layer, the recording layer is locally melted and crystallized during resolidification.
18. The optical information recording medium according to claim 14, wherein a crystallization accelerating layer which is per se crystalline during deposition, is formed between the phase-change type optical recording layer and the lower protective layer in a thickness of from 0.2 to 10 nm, and an initialization operation is carried out by irradiating an energy beam to the recording layer for crystallization.
19. The optical information recording medium according to claim 18, wherein the crystallization accelerating layer is made of SbaTe1a, where 0.3a0.5.
20. The optical information recording medium according to claim 18, wherein a composition-adjusting layer is formed adjacent to the crystallization accelerating layer, so that the composition averaging the compositions of the composition-adjusting layer and the crystallization accelerating layer is close to the composition of the recording layer.
21. The optical information recording medium according to claim 14, wherein the lower protective layer has a thickness of from 50 to 500 nm, of which a portion of from 1 to 10 nm on the side contacting the recording layer, is made of a mixture comprising a chalcogen compound and a heat resistant compound having a decomposition temperature or melting point of at least 1,000 C. which is not a chalcogen compound, and the rest is made of a heat resistant compound of a different or same type as said heat resistant compound.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A display apparatus comprising:
a display panel comprising a first surface for displaying information and a second surface disposed opposite to the first surface, and where a curvature is formed as physical force is applied; and
a curvature changing unit bonded to at least a portion of the second surface,
wherein the curvature changing unit comprises a first actuator unit configured to curve the display panel when a voltage is applied and a fixing unit configured to fixate the first actuator unit.
2. The apparatus according to claim 1,
wherein the first actuator unit comprises a third surface that is bonded to the second surface and a fourth surface that is bonded to the fixing unit.
3. The apparatus according to claim 1,
further comprising a second actuator unit bonded to at least a portion of the first surface.
4. The apparatus according to claim 1,
wherein the first actuator unit comprises:
a first electrode to which a first voltage is applied;
a second electrode to which a second voltage that is different from the first voltage is applied; and
a first electroactive polymer layer disposed between the first electrode and second electrode, and configured to generate the physical force when the first voltage and second voltage are applied.
5. The apparatus according to claim 4,
wherein a substance of the electroactive polymer layer is at least one selected from ionic electroactive polymer, dielectric actuator, relaxor ferroelectric polymer, liquid crystal rubber, PVDF (PolyVinyliDene Fluoride), PDMS (PolyDiMethyl Siloxane) and PVFT (PolyVinylidene Fluoride-co-Trifluoroethylene).
6. The apparatus according to claim 4,
wherein a substance of the first electrode and second electrode is at least one selected from carbon nanotube (CNT), metal nanowire, graphene, conductive polymer, ITO (indium-tin-oxide), TCO (Transparent Conductive Oxide) and metal.
7. The apparatus according to claim 1,
wherein the first actuator unit comprises:
a first actuator configured to curve the display panel when a voltage is applied;
a second actuator configured to perform a same function as the first actuator; and
a dielectric unit configured to block electrical connection between the first actuator and second actuator.
8. The apparatus according to claim 4,
wherein the first actuator unit further comprises:
a third electrode to which one of the second voltage and a third voltage that is different from the second voltage is applied; and
a second electroactive polymer layer disposed between the second electrode and third electrode, and configured to generate the physical force when the second voltage and third voltage are applied.
9. The apparatus according to claim 1,
wherein the fixing unit comprises a polymer layer of which a phase changes according to a temperature and a heating unit configured to heat the polymer layer.
10. The apparatus according to claim 9,
wherein a substance of the polymer layer is at least one selected from a phase transition polymer and a shape memory polymer.
11. The apparatus according to claim 9,
wherein the heating unit comprises a hot wire to which power is applied at both ends of the hot wire.
12. A method for manufacturing a display apparatus, the method comprising:
preparing a display panel for displaying information;
forming an actuator unit configured to curve the display panel by applying a physical force to the display panel when a voltage is applied; and
forming a fixing unit configured to selectively fixate the actuator unit.
13. The method according to claim 12,
wherein at the forming an actuator unit, the actuator unit is formed on top of the display panel,
at the forming a fixing unit, the fixing unit is formed on top of the actuator unit, and
the forming a fixing unit comprises:
forming a polymer layer of which a phase changes according to a temperature; and
forming a hot wire configured to heat the polymer layer on top of the polymer layer.
14. The method according to claim 12,
wherein at least one of the actuator unit and fixing unit is formed separately from the display panel, and
and the method further comprises, after the forming a fixing unit, a step of integrating the display panel, actuator unit and fixing unit.