1. A method for providing a scalable user interface comprising the steps of:
receiving a task to be completed, including the building of a user interface to be presented on a client side device, into a user interface loader;
determining server capabilities required to accomplish the task utilizing the user interface loader;
determining the client side device capabilities required to accomplish the task utilizing the user interface loader;
providing reusable user interface components available for use in multiple profiles to the user interface loader, wherein the reusable interface components comprise a widget object component, a layout component, a visual style component, a data binding component, an interaction component and a navigation component, and wherein said multiple profiles comprise one or more user interface scalability strategies that are executed at runtime of building the user interface;
defining a user interface description utilizing the reusable interface components;
assigning responsibility for accomplishing portions of the task responsive to determining the server capabilities and the client side device capabilities utilizing said user interface loader by assigning components of the user interface to be built at the server or at the client side device responsive to profiles based upon the server capabilities and the client side device capabilities;
building the user interface from the user interface description; and
presenting the user interface on client side device to complete the task.
2. A computer system having a scalable user interface system, comprising:
a plurality of client side devices at least some of which have different capabilities;
a plurality of servers at least some of which have different capabilities and including a user interface generator responsive to a user interface description to apportion building a user interface based upon one or more profiles comprising user interface scalability strategies that are executed at runtime of building the user interface;
user interface components stored in memory and available for use to build the user interface description, wherein the interface components comprise a widget object component, a layout component, a visual style component, a data binding component, an interaction component and a navigation component; and
assigning said user interface components to be built at the server or at the client side device responsive to said profiles based upon the server capabilities and the client side device capabilities.
3. A method for providing a scalable user interface system, comprising the steps of:
providing general reusable user interface components and application specific user interface components to a user interface loader;
providing profiles for user interfaces based upon server capabilities and client side device capabilities to the user interface loader, wherein the profiles comprise one or more user interface scalability strategies;
providing reusable user interface components available for use in multiple profiles to the user interface loader, wherein the reusable interface components comprise a widget object component, a layout component, a visual style component, a data binding component, an interaction component and a navigation component; and
executing user interface scalability strategies at runtime to build a user interface description using the general user interface components and the reusable user interface components at a server and application specific user interface components available at a client side device.
4. A method for providing a scalable user interface system, comprising the steps of:
receiving a user interface description defining a user interface to be built;
apportioning building the user interface description between a server and a client side device responsive to one or more profiles based upon the server capabilities and the client side device capabilities, wherein said profiles comprise one or more user interface scalability strategies that are executed at runtime of building the user interface;
using user interface components stored on the server to build a first portion of the user interface description at the server for transmission to the client side device, wherein the user interface components comprise a widget object component, a layout component, a visual style component, a data binding component, an interaction component and a navigation component;
building a second portion of the user interface description at the client side device and combining the second portion with the first portion received from the server; and
displaying the user interface on the client side device.
5. The method of claim 4, which includes the step of discarding user interface components not capable of being displayed on the client side device.
6. A computer system having a scalable user interface system, comprising:
one or more client side devices with user interface presentation andor interaction capabilities; and
one or more servers with user interface support andor interaction handling capabilities and including a user interface generator responsive to a user interface description to apportion building the user interface description at the server or at the client side device based upon one or more profiles based upon the server capabilities and the client side device capabilities, said profiles comprising user interface scalability strategies executed at runtime of building the user interface, wherein the user interface description is generated from reusable user interface components comprising a widget object component, a layout component, a visual style component, a data binding component, an interaction component and a navigation component.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for manufacturing components in a semiconductor material wafer, comprising:
providing a multi-layer wafer comprising a first semiconductor material layer, a second semiconductor material layer, and a dielectric material layer arranged between said first and second semiconductor material layers; and
removing said first semiconductor material layer,
the removal step including the steps of:
mechanically thinning said first semiconductor material layer, forming a residual semiconductor layer; and
chemically removing said residual semiconductor layer.
2. The process according to claim 1, wherein said step of chemically removing comprises the step of using said dielectric material layer as a stop layer.
3. The process according to claim 1, wherein said step of mechanically thinning comprises the step of milling said first semiconductor material layer.
4. The process according to claim 1, wherein said step of mechanically thinning comprises thinning said first semiconductor material layer to a preset thickness.
5. The process according to claim 4, wherein said preset thickness is of approximately 50 m.
6. The process according to claim 1, wherein said step of providing said multi-layer wafer comprises the steps of:
depositing said dielectric material layer on top of said first semiconductor material layer and
growing said second semiconductor material layer on top of said dielectric material layer.
7. The process according to claim 1, wherein said step of providing said multi-layer wafer comprises using a SOI-type wafer.
8. The process according to claim 1, further comprising forming suspended structures inside said second semiconductor material layer.
9. The process according to claim 1, further comprising, before said step of removing said first semiconductor material layer, the steps of:
providing a first wafer of semiconductor material; and
fixing said multi-layer wafer to said first wafer, with said second semiconductor material layer facing said first wafer.
10. The process according to claim 9, wherein, before fixing said multi-layer wafer, the step is carried out of forming suspended structures inside said second semiconductor material layer.
11. The process according to claim 10, wherein said step of forming suspended structures comprises the steps of:
forming a sacrificial layer partially coating a first portion of said second semiconductor material layer;
growing a second portion of said second semiconductor material layer;
forming a first trench separating a stator region from a rotor region, and a second trench externally delimiting said rotor region; and
removing said sacrificial layer.
12. The process according to claim 9 wherein, after said step of removing said first semiconductor material layer, the step is carried out of forming a translating platform in said multi-layer wafer.
13. The process according to claim 12, wherein said step of forming a translating platform comprises the steps of:
defining said dielectric material layer to form a mask; and
etching said second semiconductor material layer using said mask to form a through trench delimiting said translating platform.
14. The process according to claim 1, further including removing said dielectric material layer after said step of chemically removing said residual semiconductor layer.
15. A method, comprising:
forming a dielectric layer on a semiconductor substrate;
forming an epitaxial layer on the dielectric layer;
mechanically removing a portion of the semiconductor substrate, leaving a remainder of the semiconductor substrate and the dielectric and epitaxial layers; and
chemically removing the remainder of the semiconductor substrate, leaving the dielectric and epitaxial layers.
16. The method of claim 15, further including forming a polycrystalline-silicon germ layer on the dielectric layer prior to forming the epitaxial layer.
17. The method of claim 15, further including removing the dielectric layer.
18. The method of claim 15, further including bonding a support layer to the epitaxial layer.
19. The method of claim 15, further including forming a micromechanical structure in the epitaxial layer prior to the thinning step.
20. The method of claim 19 wherein the step of forming a micromechanical structure comprises:
forming trenches in the epitaxial layer delineating the micromechanical structure;
forming and defining a layer of sacrificial material on the epitaxial layer such that it fills the trenches and defines, on the surface of the epitaxial layer, portions of the micromechanical structure;
forming an additional epitaxial layer on the epitaxial layer;
forming trenches in the additional epitaxial layer further delineating the micromechanical structure;
bonding portions of the additional epitaxial layer to a support layer; and
removing the sacrificial material.
21. A method, comprising:
forming a dielectric layer on a semiconductor substrate;
forming an epitaxial layer on the dielectric layer;
forming a micromechanical structure in the epitaxial layer;
mechanically removing a portion of the semiconductor substrate, leaving a remainder of the semiconductor substrate;
bonding a support layer to the micromechanical structure; and
chemically removing the remainder of the semiconductor substrate.