Author: claimsbot

1. A semiconductor memory having a plurality of normal memory blocks and a redundant memory block, comprising:
a redundant replacement memory that stores identification information for a normal memory block that is a replacement target;
a select signal generation unit that generates a block select signal on the basis of the redundant replacement memory identification information in response to a memory reset signal inputted to a reset terminal; and
a memory block selection unit that selects the redundant memory block and enables inputoutput access thereto in place of the replacement-target normal memory block on the basis of the block select signal,
wherein the memory block selection unit selects the redundant memory block in place of any normal memory block in response to a redundant select signal which is inputted to the reset terminal and differs from the memory reset signal.
2. The semiconductor memory according to claim 1,
wherein, when the redundant replacement memory is in an initial state, the redundant replacement memory does not store the identification information;
the select signal generation unit generates the block select signal that does not direct replacement with the redundant memory block; and
the memory block selection unit selects the redundant memory block in response to the redundant select signal inputted to the reset terminal instead of selecting the redundant memory block on the basis of the block select signal that does not direct the replacement.
3. The semiconductor memory according to claim 1, wherein the select signal generation unit generates, in response to the redundant select signal in addition to the memory reset signal, a block select signal on the basis of the redundant replacement memory identification information.
4. The semiconductor memory according to claim 1, wherein the select signal generation unit latches the redundant replacement memory identification information in response to the memory reset signal.
5. The semiconductor memory according to claim 1, wherein the memory block selection unit comprises:
a plurality of selectors, provided corresponding with the normal memory blocks respectively, that select either the inputoutput of the corresponding normal memory block, or the inputoutput of the normal memory block adjacent to the corresponding normal memory block or the redundant memory block,
wherein, in response to the block select signal, the memory block selection unit selects the inputoutput of the redundant memory block without selecting the inputoutput of the replacement-target normal memory block.
6. The semiconductor memory according to claim 5, wherein the memory block selection unit further comprises:
a plurality of NOR gates that correspond with the normal memory blocks respectively,
wherein the block select signal is inputted to the corresponding NOR gate together with the output of the previous-stage NOR gate and the output of the NOR gate is supplied as a select signal to the corresponding selector; and
the redundant select signal is inputted to any of the plurality of NOR gates.
7. The semiconductor memory according to claim 6, wherein the memory reset signal is one pulse signal and the redundant select signal is a signal that retains the high level after the rising edge thereof.
8. The semiconductor memory according to claim 1, wherein the select signal generation unit generates a plurality of normal block select signals that select the normal memory blocks and a redundant block select signal that selects the redundant memory block;
when the redundant replacement memory is in the initial state, the select signal generation unit causes the plurality of normal block select signals a selective state and causes the redundant block select signal a nonselective state; and
in response to the redundant select signal, any normal block select signal is caused to be the nonselective state and the redundant block select signal is caused to be the selective state.
9. An integrated circuit device with a built-in memory module, the memory module comprising:
a memory core that includes a plurality of normal memory blocks and a redundant memory block;
a redundant replacement memory that stores identification information for a normal memory block that is a replacement target;
a select signal generation unit that generates a block select signal on the basis of redundant replacement memory identification information in response to a memory reset signal inputted to a reset terminal; and
a memory block selection unit that selects the redundant memory block and enables inputoutput access thereto in place of the replacement-target normal memory block on the basis of the block select signal,
wherein the memory block selection unit selects the redundant memory block in place of any normal memory block in response to a redundant select signal which is inputted to the reset terminal and differs from the memory reset signal.
10. The integrated circuit device according to claim 9, wherein the reset terminal of the memory module is connected to an external terminal.
11. The integrated circuit device according to claim 9, further comprising:
a reset circuit that generates the memory reset signal,
wherein the memory reset signal that is generated by the reset circuit, and a memory reset signal and redundant select signal from an external terminal are selectively supplied to the reset terminal of the memory module.
12. The integrated circuit device according to claim 9, wherein the select signal generation unit latches the redundant replacement memory identification information in response to the memory reset signal.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A compound of the formula
or a pharmaceutically acceptable salt thereof; wherein
Ar1 is
where G is O, N, or S, and R6 is nitro, cyano, \u2014PO4, \u2014CHO, or \u2014COOH;
X1 is CR1 or N;
X2 is CR2 or N;
X3 is CR3 or N;
X4 is CR4 or N;
wherein
is not unsubstituted or substituted phenyl, unsubstituted pyridyl, or unsubstituted pyridizine, or 2-methylbenzodthiazole, and no more than 2 of X1-X4 are N;
R1 to R4 are independently chosen from hydrogen, halogen, hydroxyl, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy; and
One of the following three conditions may be present:
R1 and R2 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R1R2 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
R2 and R3 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R2R3 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
R3 and R4 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R3R4 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy; and
R5 is hydrogen, halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- or di-(C1-C4)alkylamino, C1-C2haloalkyl, or C1-C2haloalkoxy.
2. A compound or salt of claim 1, where Ar1 is
where R6 is nitro and G is oxygen.
3. A compound or salt of claim 1, wherein
R1 to R4 are independently chosen from hydrogen, halogen, hydroxyl, nitro, C1-C2alkyl, C1-C2alkoxy, mono- or di-(C1-C2)alkylamino, trifluoromethyl, and trifluoromethoxy; and
one of the following two conditions is present:
R2 and R3 are taken together to form a 6-membered aromatic ring or 6-membered heteroaromatic ring containing one or two nitrogen atoms, which 6-membered R2R3 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, nitro, C1-C2alkyl, C1-C2alkoxy, mono- and di-(C1-C2)alkylamino, trifluoromethyl, and trifluoromethoxy;
R3 and R4 are taken together to form a 6-membered aromatic ring or 6-membered heteroaromatic ring containing one or two nitrogen atoms, which 6-membered R3R4 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, nitro, C1-C2alkyl, C1-C2alkoxy, mono- and di-(C1-C2)alkylamino, trifluoromethyl, and trifluoromethoxy; and
R5 is hydrogen or hydroxyl.
4. A compound or salt of claim 3, wherein
X1 is CR1, X4 is CR4; R5 is hydroxyl; and
X2 is CR2; X3 is CR3 and R2 and R3 are taken together to form a 6-membered aromatic ring, which 6-membered R2R3 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, nitro, C1-C2alkyl, C1-C2alkoxy, mono- and di-(C1-C2)alkylamino, trifluoromethyl, and trifluoromethoxy.
5. A compound or salt of claim 3, wherein
X1 is N; X2 is CR2; R5 is hydroxyl; and
X3 is CR3; X4 is CR4; and X3 and X4 are taken together to form a 6-membered aromatic ring, which 6-membered R3R4 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, nitro, C1-C2alkyl, C1-C2alkoxy, mono- and di-(C1-C2)alkylamino, trifluoromethyl, and trifluoromethoxy.
6. A compound or salt of claim 3, wherein
X1 is CR1; X2 is N; R5 hydroxyl; and
X3 is CR3; X4 is CR4; and X3 and X4 are taken together to form a 6-membered aromatic ring, which 6-membered R3R4 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, nitro, C1-C2alkyl, C1-C2alkoxy, mono- and di-(C1-C2)alkylamino, trifluoromethyl, and trifluoromethoxy.
7. A compound of claim 1 or salt thereof, wherein the compound has the formula
8-9. (canceled)
10. A method of inhibiting p97 andor inducing ER stress in a subject, comprising providing a therapeutically effective amount of a hydrazone or diacylhydrazone p97 ATPase inhibitor to the subject, wherein the ATP inhibitor is a compound or pharmaceutically acceptable salt thereof of the formula
where
dashed lines indicate a single or double covalent bond;
A is hydrogen or oxo (\u2550O);
Ar1 is furanyl, thienyl, pyridyl, or phenyl, each of which is optionally substituted with one or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, \u2014CHO, \u2014COOH, \u2014PO4, C1-C4alkyl, C1-C4alkoxy, C2-C4alkanoyl, C1-C4alkylester, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
m is 1, 2, 3, 4, or 5;
X1 is CRS or N;
X2 is CR2 or N;
X3 is CR3 or N;
X4 is CR4 or N;
wherein no more than 2 of X1-X4 are N;
R1 to R4 are independently chosen from hydrogen, halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
One of the following conditions may be present:
R2 and R3 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R2R3 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
R3 and R4 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R3R4 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy; and
R5 is hydrogen, halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- or di-(C1-C4)alkylamino, C1-C2haloalkyl, or C1-C2haloalkoxy.
11. A method of inhibiting p97 andor inducing ER stress in a subject comprising providing a therapeutically effective amount of a compound or pharmaceutically acceptable salt thereof of the formula
where
Ar1 is furanyl, thienyl, pyridyl, or phenyl, each of which is optionally substituted with one or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, \u2014CHO, \u2014COOH, \u2014PO4, C1-C4alkyl, C1-C4alkoxy, C2-C4alkanoyl, C1-C4alkylester, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
n is a bond or n is a 1 to 4 carbon alkylene or alkenylene linker;
X1 is CR1 or N;
X2 is CR2 or N;
X3 is CR3 or N;
X4 is CR4 or N;
wherein no more than 2 of X1-X4 are N;
R1 to R4 are independently chosen from hydrogen, halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
One of the following two conditions may be present:
R2 and R3 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R2R3 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy;
R3 and R4 may be taken together to form a 6-membered carbocyclic ring, or a 5- or 6-membered heterocyclic ring containing 1 or 2 heteroatoms independently chosen from N, O, and S, which carbocyclic or heterocyclic R3R4 ring is substituted with 0 or 1 or more substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy; and
R5 is hydrogen, halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- or di-(C1-C4)alkylamino, C1-C2haloalkyl, or C1-C2haloalkoxy.
12. The method of claim 11, wherein the compound is a compound of the formula
or a pharmaceutically acceptable salt thereof.
13. The method of claim 12 wherein
Ar1 is a 2-furanyl or phenyl, each of which is substituted with at least one nitro, hydroxyl, amino, \u2014CHO, \u2014COOH, or \u2014PO4 substituent and optionally substituted with one or more substituents independently chosen from cyano, C1-C2alkyl, C1-C2alkoxy, mono- and di-(C1-C2)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy.
14. The method of claim 12, wherein the compound is a compound of the formula
or a pharmaceutically acceptable salt thereof, wherein
R6 is nitro, cyano, \u2014CHO, \u2014COOH, or \u2014PO4; and
R7 is 0, 1, or 2 substituents independently chosen from halogen, C1-C2alkyl, and C1-C2alkoxy.
15. The method of claim 14, wherein R6 is nitro and R7 absent.
16. The method claim 10, wherein
is a phenyl, naphthyl, quinolinyl, isoquinolinyl, or pyridyl, in which
R5 is hydrogen, halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- or di-(C1-C4)alkylamino, C1-C2haloalkyl, or C1-C2haloalkoxy; and
each of which
phenyl, naphthyl, quinolinyl, isoquinolinyl, is substituted with 0, 1, or 2 substituents independently chosen from halogen, hydroxyl, amino, cyano, nitro, C1-C4alkyl, C1-C4alkoxy, mono- and di-(C1-C4)alkylamino, C1-C2haloalkyl, and C1-C2haloalkoxy.
17. The method of claim 16, wherein
R5 is hydrogen or hydroxyl; and
each of which
phenyl, naphthyl, quinolinyl, isoquinolinyl, is substituted with 0, 1, or 2 substituents independently chosen from chloro, bromo, hydroxyl, nitro, methyl, methoxy, and trifluoromethyl.
18. The method of claim 16, wherein
is phenyl, 3-pyridyl, 2-, 3-, or 4-hydroxy phenyl, 3-hydroxy-naphth-2-yl, 1-hydroxy-isoquinolin-3-yl, 4-hydroxy-quinolin-3-yl;
each of which is additionally substituted with 0, 1, or 2 substituents independently chosen from hydroxyl, nitro, chloro, bromo, methyl, methoxy, and trifluoromethyl.
19. The method of claim 16, wherein
is 3-hydroxy-naphth-2-yl.
20. The method of claim 10, wherein Ar1 is nitro-phenyl or nitro-furanyl.
21. The method of claim 10, wherein Ar1 is
and R6 is nitro, cyano, \u2014PO4, \u2014CHO, or \u2014COOH.
22. The method of claim 21, wherein R6 is nitro.
23. The method of claim 11, wherein the a disease or disorder for which p97 inhibition andor ER stress induction is an effective treatment disorder is cancer, cancer prophylaxis in a patient having an increased risk of cancer, tumor, neoplasm, neovascularization, vascularization, cardiovascular disease, intravasation, extravasation, arthritis, infection, Alzheimer’s dementia, blood clot, atherosclerosis, melanoma, a skin disorder, rheumatoid arthritis, diabetic retinopathy, macular edema, macular degeneration, inflammation or autoimmune disease, or viral infection.
24-37. (canceled)

1. An integrated circuit device, comprising:
at least one bipolar junction transistor (BJT) that includes
at least a first base electrode comprising a semiconductor material doped to a first conductivity type formed on and in contact with a surface of the semiconductor substrate, the at least first base electrode being separated from an emitter electrode in a direction parallel to the surface of the substrate by a separation space,
a first base region formed in the substrate below the emitter electrode and comprising a first portion of the substrate doped to the first conductivity type, and
a second base region formed in the substrate below the separation space and comprising a second portion of the substrate doped to the first conductivity type and having a different dopant concentration than the first base region.
2. The integrated circuit device of claim 1, wherein:
the emitter electrode comprises the semiconductor material doped to a second conductivity type formed on and in contact with the surface of the semiconductor substrate.
3. The integrated circuit device of claim 2, wherein:
the at least one BJT further includes
an emitter region formed in the substrate between the emitter electrode and the first base region and comprising a third portion of the substrate doped to the second conductivity type.
4. The integrated circuit device of claim 1, wherein:
the at least one BJT further includes
a third base region formed in the substrate below at least a portion of the at least first base electrode and comprising a third portion of the substrate doped to the first conductivity type.
5. The integrated circuit device of claim 1, wherein:
the at least one BJT further includes
a collector region formed in the substrate below at least the first base region and comprising at least a third portion of the substrate doped to the second conductivity type.
6. The integrated circuit device of claim 5, wherein:
the collector region includes at least
a first collector portion comprising the third portion of the substrate, and
a second collector portion formed below the first collector portion, the second collector portion comprising a fourth portion of the substrate doped to the second conductivity type at a higher concentration than the first collector portion.
7. The integrated circuit device of claim 1, further including:
at least one junction field effect transistor (JFET) that includes
at least a drain electrode comprising the semiconductor material doped to one conductivity type formed on and in contact with the surface of the semiconductor substrate, the at least drain electrode being separated from a gate electrode in a direction parallel to the surface of the substrate by a gate separation space,
a channel region formed in the substrate below the gate electrode and comprising a third portion of the substrate doped to the one conductivity type, and
a first drain region formed in the substrate below the gate separation space and comprising a fourth portion of the substrate doped to the one conductivity type and having a different dopant concentration than the channel region.
8. The integrated circuit device of claim 7, wherein:
the at least one JFET further includes
a gate region formed in the substrate between the gate electrode and the channel base region and comprising a fifth portion of the substrate doped to a conductivity type different from the one conductivity type,
a well region formed in the substrate below at least the channel region and comprising a sixth portion of the substrate doped to the same conductivity type as the gate region, and
a well electrode comprising the semiconductor material doped to the same conductivity type as the well region and formed on and in contact with the surface of the semiconductor substrate, and electrically coupled to the well region.
9. The integrated circuit device of claim 7, wherein:
the gate electrode comprises the semiconductor material doped to another conductivity type different from the one conductivity type, the gate electrode being formed on and in contact with the surface of the semiconductor substrate.
10. The integrated circuit device of claim 1, wherein:
the substrate is a semiconductor-on-insulator substrate that includes semiconductor regions formed on an isolation layer, the isolation layer being below the surface of the substrate and extending parallel to the surface of the substrate; and
the at least one BJT is formed in one of the semiconductor regions above a portion of the isolation layer.
11. A method of forming an integrated circuit device having at least a bipolar junction transistor (BJT), comprising the steps of:
a) forming a first BJT base region of a first conductivity type in a semiconductor substrate doped to a second conductivity type;
b) forming an electrode layer comprising a semiconductor material over and in contact with a surface of the substrate, including the BJT base region;
c) patterning the electrode layer to form at least a BJT base electrode separated from a BJT emitter electrode in a direction parallel to the substrate surface by a separation space; and
d) forming a second BJT base region of the first conductivity type in the substrate below the separation space and essentially not below the BJT base electrode, a depth of the second BJT base region with respect to the substrate surface being different than a depth of the first BJT base region.
12. The method of claim 11, wherein:
the step d) includes an ion implantation step that is self-aligned with respect to the BJT emitter electrode and the BJT emitter electrode does not include side wall spacers.
13. The method of claim 11, wherein:
the step b) further includes doping portions of the electrode layer corresponding to the BJT base electrode to the first conductivity type and doping portions of the electrode layer corresponding to the BJT emitter electrode to the second conductivity type.
14. The method of claim 13, further including:
diffusing dopants from the BJT emitter electrode into the substrate to form a BJT emitter region below the BJT emitter electrode, the BJT emitter region comprising a portion of the substrate doped to the second conductivity type.
15. The method of claim 12, wherein:
before step b), forming a third BJT base region of the first conductivity type in the semiconductor substrate; and
the step b) further includes forming the BJT base electrode over and in contact with at least a portion of the third BJT base region.
16. The integrated circuit device of claim 15, wherein:
before step a), forming a BJT collector region of the second conductivity type below the base region, the collector region comprising a buried layer formed in, but not extending to a top surface of the semiconductor substrate; and
the step b) further includes forming a BJT collector electrode over and in contact with the top surface of the substrate.
17. The method of claim 11, wherein:
the step b) further includes forming the electrode layer over and in contact with a channel region of a junction field effect transistor (JFET), the channel region being formed in the substrate and of one conductivity type; and
the step c) further includes patterning the electrode layer to form at least a JFET gate electrode separated from a JFET drain electrode in a direction parallel to the substrate surface by a gate separation space, the JFET gate electrode being formed over at least a portion of the channel region and being doped to a conductivity type different than the one conductivity type.
18. The method of claim 16, further including:
forming a first JFET drain region of the one conductivity type below the gate separation space and essentially not below the JFET gate electrode.
19. The method of claim 16, wherein:
diffusing dopants from the JFET gate electrode into the substrate to form a JFET gate region between the JFET gate electrode and the channel region, the JFET gate region comprising a portion of the substrate doped to the same conductivity type as the gate electrode.
20. The method of claim 16, wherein:
d) forming the first JFET drain region includes an ion implantation step that is self-aligned with respect to the JFET gate electrode and the gate electrode does not include side wall spacers.
21. An integrated circuit device, comprising:
at least one bipolar junction transistor (BJT) comprising
an emitter that includes at least one doped semiconductor emitter electrode formed on and in contact with a surface of a semiconductor substrate, and an emitter region formed by dopants diffusing into the substrate from the emitter electrode,
a base that includes a first base region formed below, and creating a pn junction with, the emitter region, and a second base region formed adjacent to the first base region in a direction parallel to the surface of the semiconductor substrate, and having a different dopant concentration than the first base region, and
a collector that includes at least a portion of the substrate formed below at least the first base region.
22. The integrated circuit device of claim 21, further including:
at least one junction field effect transistor (JFET) comprising
a first gate that includes a doped semiconductor gate electrode formed on and in contact with the surface of the semiconductor substrate, and a first gate region formed by dopants diffusing into the substrate from the gate electrode,
a channel region formed below, and creating a pn junction with, the gate region,
a source region formed adjacent to a first side of the channel region in a direction parallel to the surface of the semiconductor substrate, and a drain region formed adjacent to a second side of the channel region opposite to the first side of the channel region, the source and drain regions having a different dopant concentration than the channel region, and
a second gate that includes at least a portion of the substrate formed below at least the channel region.
23. The integrated circuit of claim 22, wherein:
the at least one doped semiconductor emitter electrode and doped semiconductor gate electrode are formed from a same semiconductor layer.
24. The integrated circuit of claim 23, wherein:
the at least one BJT includes the emitter electrode being formed between a first base electrode portion a second base electrode portion; and
the at least one JFET further includes the gate electrode being formed between a source electrode and a drain electrode in the same manner that the emitter electrode is formed between the first and second base electrode portions; wherein
the first and second base electrode portions, source electrode, and drain electrode are formed from the same semiconductor layer as the emitter and gate electrodes, and the at least BJT differs from the JFET in that the first and second base electrodes are shorted to one another while the source and drain electrodes are not shorted to one another.
25. The integrated circuit of claim 21, wherein:
the emitter includes a plurality of doped semiconductor emitter electrodes, at least a portion of which are conductively connected together by a layer different from that which forms the emitter electrodes.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A file comprising:
a binding body which is superimposed with a plurality of binding sheets;
a curved retaining portion which is curved toward the direction of the pocket sheets as the binding body extending adhered and connected on the end edge of a group of pocket sheets as the binding body when opened the cover; and
a curved subsidiary portion which fixes its back into an optional form in a region on a front cover side and a region on a back cover side of a spine portion between the front cover portion and the back cover portion; and wherein
the binding body is adjacently provided to the curved retaining portion by forming an arch-shape toward the direction of a front cover portion and back cover portion extending from the inner side of the spine portion; and wherein
the curved retaining portion is connected with the width shorter than the width of the spine portion to the inner side of the curved subsidiary portion at the outer side of the curved retaining portion to enable the end edge adjacently provided on the binding body to curve.
2. The file according to claim 1, wherein the binding body is superimposed with a plurality of binding sheets and connected on the end edge which is connected to the front cover, wherein
the curved retaining portion comprises a front cover portion connected to the binding body between the front cover portion and the back cover portion, wherein
the cover body forms a hinge portion between the front cover side and the back cover side, wherein
said binding body is formed for the end edge of the group of pocket sheets as the binging body connected to the cover body to curve toward the side of the binding sheets extending when opened the cover body, and wherein
said curved subsidiary portion is optionally spaced from the binding body in the cross direction and connected with the width shorter than the width of the spine portion at the outer side of the hinge portion of said front cover portion and the hinge portion of said back cover portion to enable the end edge of the binding body which is connected to the cover to curve.
3. The file according to claim 2, wherein said curved retaining portion comprises: the hinge portion on the front cover side adjacently provided on the front cover portion; the hinge portion on the back cover side adjacently provided on the back cover portion; and an interjacent connecting portion interposing between said hinge portion on the front cover side and said hinge portion on the back cover side, and wherein
said intervenient assembly is formed to curve toward the direction of the binding sheets extending along with the end edge of the binging body connected to the cover by its weight when opened the cover body.
4. The file according to claim 1, wherein said curved retaining portion comprises the hinge portion on the front cover side connected to the front cover portion, the hinge portion on the back cover side connected to the back cover portion and the interjacent connecting portion interposing between the hinge portion on said front cover side and the hinge portion on said back cover side; and wherein
the region on the front cover side leading to the hinge portion on the front cover side and the region on the back cover side leading to the hinge portion on the back cover side bisect at substantially right angles to the interjacent connecting portion when load is not applied and form the interjacent connecting portion toward the direction of the binding sheets as to be lifted with the elasticity adjacent to the hinge portion on the front cover side and the hinge portion on the back cover side when opened the cover.
5. The file according to claim 2, wherein the height between a folding portion of said curved subsidiary portion and the back cover portion is formed substantially the equal or shorter than the height between the hinge portion on the front cover side of said curved retaining portion and the inner surface of the curved subsidiary portion and between the hinge portion on the back cover side and the inner surface of the curved subsidiary portion, wherein
the hinge portion on the front cover side and the hinge portion on the back cover side are positioned adjacent to the end edge in the cross direction of the back cover portion when closed the cover body, wherein
the interjacent connecting portion interposing between the hinge portion on the front cover side and the hinge portion on the back cover side is formed to curve toward the opposite side of the back cover portion when opened the cover body and also the width of between the hinge portion on the front cover side and the hinge portion on the back cover side is formed to be shorter than the width of the back cover portion.
6. The file according to claim 1, wherein the interjacent connecting portion of the curved retaining portion is deformed plastically by hot press onto a synthetic resin sheet body and comprises to be bestowed flexibility by reducing its thickness.
7. The file according to claim 1, wherein the binding body superimposes the plurality of binding sheets and is connected on the end edge which is connected to the cover, wherein
the curved retaining portion is comprised of the end edge connected to said binding body and a connecting body connecting the cover, wherein
the cover body has the front cover portion, the back cover portion and the spine portion between said front cover portion and said back cover portion, forms the folding portion formed to be optionally spaced from the spine portion between the front cover portion and the back cover portion, and in the cover body, the binding sheets are connected via said connecting body and the curved subsidiary portion is comprised between the folding portion and the spine portion and in the spine portion, wherein
said binding body is formed to curve along the end edge of the binging body connected to the cover toward the direction of the binding sheets extending when opened the cover body, and wherein
said curved retaining portion is connected adjacent to the folding portion of said front cover portion and the folding portion of said back cover portion with optionally spacing from the binding body in the cross direction to enable the end edge connected to the cover of the binding body with the short width to curve.
8. The file according to claim 7, wherein the connecting body comprises a connecting portion on the front cover side connected to the side of the front cover portion, a connecting portion on the back cover side connected to the side of the back cover portion and the interjacent connecting portion interposing between said connecting portion on the front cover side and said connecting portion on the back cover side, wherein
said interjacent connecting portion connects the end edge connected to the cover of the binding body and is formed to curve toward the binding sheets extending along with the end edge connected to the cover of the binding body by tension of the connecting portion on the front cover side and the connecting portion on the back cover side when opened the cover body, and wherein
the hinge portion is formed between the connecting portion on the front cover side and the interjacent connecting portion and between the connecting portion on the back cover side and the interjacent connecting portion.
9. The file according to claim 7, wherein said connecting body comprises the connecting portion on the front cover side connected to the side of the front cover portion, the connecting portion on the back cover side connected to the side of the back cover portion and the interjacent connecting portion interposing between said connecting portion on the front cover side and the connecting portion on the back cover side, wherein
the hinge portion on the front cover side and the hinge portion on the back cover side are formed between the connecting portion on the front cover side and the interjacent connecting portion and between the connecting portion on the back cover side and the interjacent connecting portion, and wherein
the connecting portion on the front cover side leading to the hinge portion on the front cover side and the connecting portion on the back cover side leading to the hinge portion on the back cover side bisect at substantially right angles to the interjacent connecting portion when load is not applied and form the interjacent connecting portion toward the direction of the binding sheets as to be lifted with the elasticity adjacent to the hinge portion on the front cover side and the hinge portion on the back cover side when opened the cover.
10. The file according to claim 7, wherein the height between the folding portion of said front cover portion and the folding portion of said back cover portion is formed substantially the equal or shorter than the height between the hinge portion on the front cover side of said connecting body and the inner surface of the front cover portion and between the hinge portion on the back cover side and the inner surface of the back cover portion, wherein
the hinge portion on the front cover side and the hinge portion on the back cover side are positioned adjacent to the end edge in the cross direction of the back cover portion when closed the cover body, and wherein
the interjacent connecting portion between the hinge portion on the front cover side and the hinge portion on the back cover side is formed to curve toward the opposite side of the back cover portion when opened the cover body and also the width of between the hinge portion on the front cover side and the hinge portion on the back cover side is formed to be shorter than the width of the back cover portion.
11. The file according to claim 7, wherein the interjacent connecting portion of the binding body is deformed plastically by hot press onto a synthetic resin sheet body and comprises to be bestowed flexibility by reducing its thickness.
12. The file according to claim 1, wherein the binding sheets comprise pockets combined with thermoplastic resin sheets, wherein
each binding sheet is hot-adhered to another on the end edge connected to the cover thereof, and wherein
the end edge connected to the cover is formed to curve inwardly when opened the binding sheets.
13. The file according to claim 1, wherein said connecting body comprises the sheet body of rigid body comprising thermoplastic synthetic resin, has through-holes drilled in the region connected to the binding body, and is formed to curve.