Author: claimsbot

1-20. (canceled)
21. A device for use with a probe sensor assembly in a system for sensing a physiological parameter of a patient, the device comprising an adhesive layer and first and second windows, the adhesive layer having adhesive on at least a portion thereof, the first and second windows being formed in the adhesive layer and configured to be matingly engageable with apertures of the probe sensor assembly, wherein the first and second windows comprise respective first and second surfaces that engage and disengage the apertures of the probe sensor assembly.
22. The device of claim 21, wherein at least one of the first and second windows is formed as a ring.
23. A system for sensing a physiological parameter of a patient comprising:
a probe assembly having a light emitter, a light detector, and first and second apertures for the light emitter and light detector, respectively; and
an adhesive layer having first and second windows operably attached thereto, the adhesive layer having adhesive on at least a portion thereof, and said windows having surfaces to engage and disengage with said apertures of said probe assembly.
24. The system of claim 23, wherein at least one of said windows is formed as a ring.
25. A method of providing a system for sensing a physiological parameter of a patient, comprising:
providing at least one probe assembly having a light emitter, a light detector, and first and second apertures for the light emitter and the light detector; and
providing a plurality of adhesive layers, each adhesive layer having first and second windows respectively, each adhesive layer having adhesive on at least a portion thereof, the respective first and second windows being operably attached to each respective adhesive layer and configured to be matingly engageable with the first and second apertures of the at least one probe assembly, wherein the respective first and second windows comprise respective first and second surfaces to engage and disengage the first and second apertures of the at least one probe assembly.
26. The method of claim 25, further comprising positioning at least one of the plurality of adhesive layers on an appendage of a patient.
27. The method of claim 25, further comprising attaching the respective first and second windows of the least one of the plurality of adhesive layers to the respective first and second apertures of the at least one probe assembly.
28. The method of claim 25, further comprising sensing at least one signal transmitted through an appendage of a patient.
29. The method of claim 25, further comprising disengaging the respective first and second windows of at least one of the plurality of adhesive layers from the respective first and second apertures of the at least one probe assembly.
30. A device for use with a probe sensor assembly in a system for sensing a physiological parameter of a patient, the device comprising an adhesive member and first and second coupling members, the adhesive member having adhesive on at least a portion thereof, the first and second coupling members operably attached to the adhesive member and configured to be matingly engageable with housings of a probe sensor assembly, wherein the first and second coupling members comprise respective first and second engagement features that engage and disengage the housings of the probe sensor assembly.
31. The device of claim 30, wherein at least one of the first and second engagement features is formed as a ring.
32. A system for sensing a physiological parameter of a patient comprising:
a probe assembly having a light emitter, a light detector, and first and second housings for the light emitter and light detector, respectively; and
an adhesive member having first and second coupling members operably attached thereto, the adhesive member having adhesive on at least a portion thereof, and said coupling members having engagement features to engage and disengage with said housings of said probe assembly.
33. The system of claim 32, wherein at least one of said coupling members is formed as a ring.
34. A method of providing a system for sensing a physiological parameter of a patient, comprising:
providing at least one probe assembly having a light emitter, a light detector, and first and second housings for the light emitter and the light detector; and
providing a plurality of adhesive members, each adhesive member having first and second coupling members respectively, each adhesive member having adhesive on at least a portion thereof, the respective first and second coupling members being operably attached to each respective adhesive member and configured to be matingly engageable with the first and second housings of the at least one probe assembly, wherein the respective first and second coupling members comprise respective first and second engagement features to engage and disengage the first and second housings of the at least one probe assembly.
35. The method of claim 34, further comprising positioning at least one of the plurality of adhesive members on an appendage of a patient.
36. The method of claim 34, further comprising attaching the respective first and second coupling members of the least one of the plurality of adhesive members to the respective first and second housings of the at least one probe assembly.
37. The method of claim 34, further comprising sensing at least one signal transmitted through an appendage of a patient.
38. The method of claim 34, further comprising disengaging the respective first and second coupling members of at least one of the plurality of adhesive members from the respective first and second housings of the at least one probe assembly.
39. A device for use with a reusable probe sensor assembly in a system for sensing a physiological parameter of a patient, the device comprising a disposable bandage apparatus and first and second probe couplers, the bandage apparatus having adhesive on at least a portion thereof, the first and second probe couplers being operably attached to the bandage apparatus and configured to be matingly engageable with probe housings of the reusable probe sensor assembly, wherein the first and second probe couplers comprise respective first and second locking features that engage and disengage the probe housings of the reusable probe sensor assembly.
40. The device of claim 39, wherein at least one of the first and second locking features comprises at least one component comprising one or more of a ring, a groove, a notch, or a contoured portion of a receptacle.
41. A system for sensing a physiological parameter of a patient comprising:
a probe assembly having a light emitter, a light detector, and first and second modular housings for the light emitter and light detector, respectively; and
a disposable bandage apparatus having first and second modular receptacles operably attached thereto, the bandage apparatus having adhesive on at least a portion thereof, and said modular receptacles having locking features to engage and disengage with said modular housings of said probe assembly.
42. The system of claim 41, wherein at least one of said locking features comprises at least one component comprising one or more of a ring, a groove, a notch, or a contoured portion of a receptacle.
43. A method of providing a system for sensing a physiological parameter of a patient having reusable and disposable components, comprising:
providing at least one reusable probe assembly having a light emitter, a light detector, and first and second modular probe housings for the light emitter and the light detector; and
providing a plurality of disposable bandages, each disposable bandage having first and second probe couplers respectively, each disposable bandage having adhesive on at least a portion thereof, the respective first and second probe couplers being operably attached to each respective disposable bandage and configured to be matingly engageable with the first and second modular probe housings of the at least one reusable probe assembly, wherein the respective first and second probe couplers comprise respective first and second locking features to engage and disengage the first and second modular probe housings of the at least one reusable probe assembly.
44. The method of claim 43, further comprising positioning at least one of the plurality of disposable bandages on an appendage of a patient.
45. The method of claim 43, further comprising engaging the respective first and second probe couplers of the least one of the plurality of disposable bandages with the respective first and second modular probe housings of the at least one reusable probe assembly.
46. The method of claim 43, further comprising sensing at least one signal transmitted through an appendage of a patient.
47. The method of claim 43, further comprising disengaging the respective first and second probe couplers of at least one of the plurality of disposable bandages from the respective first and second modular probe housings of the at least one reusable probe assembly.
48. The method of claim 43, further comprising disposing of at least one of the plurality of disposable bandages.
49. The method of claim 43, further comprising reusing the at least one reusable probe assembly.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1.-16. (canceled)
17. An optoelectronic semiconductor chip comprising:
a multiplicity of active regions arranged at a distance from one another, and
a reflective layer arranged at an underside of the multiplicity of active regions, wherein
at least one of the active regions has a main extension direction,
one of the active regions has a core region formed with a first semiconductor material,
the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region,
the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and
the reflective layer reflects electromagnetic radiation generated during operation in the active layer.
18. The optoelectronic semiconductor chip according to claim 17, wherein
the active regions are based on a nitride compound semiconductor material,
the first semiconductor material is deposited epitaxially onto a growth substrate, and the optoelectronic semiconductor chip is free of the growth substrate,
a growth direction of the first semiconductor material is substantially parallel to the main extension direction,
at least a large portion of the active regions have a length determined in the main extension direction and have a diameter determined in a plane perpendicular to the main extension direction, and the ratio of length to diameter is at least three,
at least a large portion of the active regions have a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction, and the current spreading layer is transmissive to electromagnetic radiation generated during operation in the active layer,
the current spreading layer is formed with a transparent conductive oxide,
the current spreading layer extends over at least a large portion of the length of the active region,
an insulation material is arranged between the multiplicity of active regions, and the insulation material is transmissive to electromagnetic radiation generated during operation in the active layer and the insulation material surrounds the active regions at least in directions transversely with respect to the main extension direction,
the insulation material directly adjoins the current spreading layer at least in places,
the reflective layer directly adjoins the insulation material in places, and
at least a large portion of the active regions have a passivation layer at their underside facing the reflective layer, said passivation layer directly adjoining the reflective layer and the core region of the active region.
19. The optoelectronic semiconductor chip according to claim 17, wherein the first semiconductor material is epitaxially deposited onto a growth substrate, and the optoelectronic semiconductor chip is free of the growth substrate.
20. The optoelectronic semiconductor chip according to claim 17, wherein a growth direction of the first semiconductor material is substantially parallel to the main extension direction.
21. The optoelectronic semiconductor chip according to claim 17, wherein the active region has a length determined in the main extension direction, the active region has a diameter determined in a plane being perpendicular to the main extension direction, and the ratio of length to diameter is at least three.
22. The optoelectronic semiconductor chip according to claim 17, wherein the active region has a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction, wherein the current spreading layer is transmissive to electromagnetic radiation generated during operation in the active layer.
23. The optoelectronic semiconductor chip according to claim 22, wherein the current spreading layer is formed with a transparent conductive oxide.
24. The optoelectronic semiconductor chip according to claim 22, wherein the active region has a length determined in the main extension direction and the current spreading layer extends over at least a large portion of the length of the active region.
25. The optoelectronic semiconductor chip according to claim 17, wherein an insulation material is arranged between the multiplicity of active regions, and the insulation material is transmissive to electromagnetic radiation generated during operation in the active layer and the insulation material surrounds the active regions at least in directions transversely with respect to the main extension direction.
26. The optoelectronic semiconductor chip according to claim 25, wherein the insulation material directly adjoins an outer surface of the active region at least in places.
27. The optoelectronic semiconductor chip according to claim 25, wherein the active region has a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction and the insulation material directly adjoins the current spreading layer at least in places.
28. The optoelectronic semiconductor chip according to claim 25, wherein the reflective layer directly adjoins the insulation material in places.
29. The optoelectronic semiconductor chip according to claim 17, wherein a mask layer is arranged at that side of the multiplicity of active regions facing away from the reflective layer, and the mask layer has, for each of the active regions, an opening through which the first semiconductor material penetrates.
30. The optoelectronic semiconductor chip according to claim 29, wherein the mask layer is transmissive to electromagnetic radiation generated during operation in the active layer.
31. The optoelectronic semiconductor chip according to claim 17, wherein a coupling-out layer is arranged at a side of the multiplicity of active regions facing away from the reflective layer, said coupling-out layer being formed with the first semiconductor material.
32. The optoelectronic semiconductor chip according to claim 29, wherein
a coupling-out layer is arranged at a side of the multiplicity of active regions facing away from the reflective layer, said coupling-out layer being formed with the first semiconductor material, and
the first semiconductor material of the coupling-out layer connects to the first semiconductor material in the core regions of the active regions through the openings in the mask layer.
33. The optoelectronic semiconductor chip according to claim 17, wherein the active region has a passivation layer at its underside facing the reflective layer, said passivation layer directly adjoining the reflective layer and the core region of the active region.
34. An optoelectronic semiconductor chip comprising:
a multiplicity of active regions arranged at a distance from one another, and
a reflective layer arranged at an underside of the multiplicity of active regions, wherein
at least one of the active regions has a main extension direction,
one of the active regions has a core region formed with a first semiconductor material,
the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region,
the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region,
the reflective layer reflects electromagnetic radiation generated during operation in the active layer,
at least a large portion of the active regions have a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction, and the current spreading layer is transmissive to electromagnetic radiation generated during operation in the active layer, and
an insulation material is arranged between the multiplicity of active regions, and the insulation material is transmissive to electromagnetic radiation generated during operation in the active layer and the insulation material surrounds the active regions at least in directions transversely with respect to the main extension direction.

1. A method, comprising:
forming a trench over a layer disposed on a semiconductor substrate
filling the trench with a first material, thereby forming a filled trench over the layer;
forming a feature of a second material over the filled trench, wherein the feature is disposed over the filled trench and extends along two opposing sidewalls of the filled trench to a top surface of the layer;
planarizing the feature to expose a top surface of the filled trench, wherein the planarizing provides a first portion of the feature adjacent a first sidewall of the two opposing sidewalls of the filled trench and a second portion of the feature adjacent a second sidewall of the two opposing sidewalls of the filled trench; and
using the first and second portions of the feature to define a dimension of an interconnect feature disposed over the semiconductor substrate.
2. The method of claim 1, further comprising:
forming first and second features over the layer, wherein the trench extends between the first and second feature; and
using the first and second features to define another dimension of the interconnect feature disposed over the semiconductor substrate.
3. The method of claim 2, wherein the first and second features include photoresist.
4. The method of claim 1, wherein the forming the feature of the second material includes depositing photoresist.
5. The method of claim 1, wherein the filling the trench with the first material includes depositing a silicon-containing antireflective coating (Si-ARC).
6. The method of claim 1, wherein the filling the trench with the first material includes depositing at least one of SiON and a polysilane.
7. The method of claim 1, wherein forming the trench includes:
forming first feature and second features over the layer;
depositing a sacrificial layer between the first and second features and etching the trench in the sacrificial layer.
8. The method of claim 6, wherein the sacrificial layer includes photoresist.
9. The method of claim 6, further comprising:
after forming the first and second features and before forming the trench, forming a conformal layer over the first and second features.
10. A method, comprising:
forming a first feature and a second feature having a trench extending therebetween on a semiconductor substrate;
filling the trench with a material;
forming a third feature and a fourth feature each on opposing sides of the filled trench and each having an edge defined by the filled trench; and
using the first, second, third and fourth features to pattern an underlying layer over the semiconductor substrate.
11. The method of claim 10, wherein the using the first, second, third and fourth features to pattern includes:
removing the first, second, third and fourth features to form first, second, third and fourth openings.
12. The method of claim 11, wherein the using the first, second, third and fourth features to pattern includes:
etching the underlying layer through the first, second, third and fourth openings.
13. The method of claim 10, further comprising:
using the patterned underlying layer to form an interconnect structure over the semiconductor substrate, wherein the interconnect structure is defined by the first, second, third and fourth features.
14. The method of claim 10, further comprising:
after forming the third and fourth features, forming a layer over the substrate encasing the first, second, third, and fourth features; and
etching-back the layer to expose a top surface of each of the first, second, trench, third and fourth features.
15. The method of claim 14, further comprising:
removing the first, second, third and fourth features to form the first, second, third and fourth openings after the etching-back; and
etching the underlying layer through the first, second, third and fourth openings.
16. The method of claim 10, wherein the first, second, third and fourth features are photoresist.
17. A method, comprising:
forming a first feature and a second feature over a substrate, wherein each of the first and second features has spacer elements abutting its sidewalls;
forming a trench having a first end and an opposing second end and a first sidewall and an opposing second sidewall, and wherein the trench extends between the first and second features such that the first end has an interface with the spacer element of the first feature and the opposing second end has an interface with the spacer element of the second feature;
after forming the trench, forming a third feature and a fourth feature, wherein the first sidewall of the trench has an interface with the third feature and the opposing second sidewall of the trench has an interface with the fourth feature; and
using the first, second, third and fourth features to pattern a structure of a semiconductor device.
18. The method of claim 17, wherein the structure is an interconnect structure.
19. The method of claim 17, wherein the using the first, second, third and fourth features to pattern the structure includes removing the features to form respective openings and using the respective openings to etch an underlying layer.
20. The method of claim 17, wherein the forming the trench includes:
forming a patterning material over the first and second feature;
forming an opening in the patterning material; and
etching the trench through the opening in the patterning material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. The apparatus as set forth herein wherein any one or combination of members is used as a handle wherein said handle is used simultaneously to practise the invention to move air and also practise the invention to pump water through the nozzle to create water mist into the moving air.
2. The apparatus as set forth herein wherein embodied as such that the fan blade is a sounding board which when struck produces a celebratory and signaling sound to simulate and enhance traditional hand clapping.
3. The apparatus as set forth herein wherein embodied as such that the fan blade is a surface on which advertisement is presented or the shape of the fan blade is such as to be itself an advertisement.