Author: claimsbot

1. A relationship management system, comprising:
a relationship management server system; and
a database;
wherein the relationship management server system is configured to:
store a user account associated with a user in the database;
store information concerning contacts associated with the user in the database;
store event information associated with the user and at least one of the stored contacts in the database;
store at least one objective in the database;
score at least one relationship between the user and a contact based upon stored event information associated with the user and the contact to create a scored relationship graph; and
generate a recommendation concerning an action based upon at least one stored objective and the scored relationship graph.
2. The relationship management system of claim 1, wherein the relationship management server system is configured to obtain contact information from at least one source of contact information.
3. The relationship management system of claim 2, wherein at least one source of contact information is selected from the group consisting of a web mail service, an enterprise mail system, and an online social network.
4. The relationship management system of claim 1, wherein the relationship management server system is configured to obtain event information from at least one source of event information.
5. The relationship management system of claim 4, wherein at least one source of event information is selected from the group consisting of a web mail service, an enterprise mail system, a web calendaring service, an enterprise calendaring system, call data records, and an online social network.
6. The relationship management system of claim 1, wherein the objective relates to a specific project.
7. The relationship management system of claim 1, wherein the objective relates to an objective with respect to the user’s relationship graph.
8. The relationship management system of claim 7, wherein the objective relates to a specific relationship.
9. The relationship management system of claim 1, wherein the relationship management server system is further configured to store information characterizing at least one relationship between the user and a contact.
10. The relationship management system of claim 9, wherein the information characterizing a relationship between the user and a contact is expressed in terms of a first value indicative of the importance of the relationship to the user, and a second value indicative of the strength of the relationship.
11. The relationship management system of claim 10, wherein the objective is expressed as a target value for the strength of a relationship.
12. The relationship management system of claim 9, wherein:
the relationship management server system is further configured to prompt the user for information characterizing at least one relationship; and
the at least one relationship is selected based upon the importance of the relationship to the generation of a recommendation concerning an action based upon the stored objective and the scored relationship graph.
13. The relationship management system of claim 1, wherein the relationship management server system is further configured to store information identifying a group of contacts associated with the objective.
14. The relationship management system of claim 13, wherein the relationship management server system is further configured to recommend at least one contact for inclusion in the group of contacts associated with the objective.
15. The relationship management system of claim 1, wherein the relationship management server system is further configured to decrease the score assigned to a relationship between a user and a contact due to the passage of time.
16. The relationship management system of claim 1, wherein the relationship management server system is further configured to increase the score assigned to a relationship between a user and a contact in response to the occurrence of an event involving at least the user and the contact.
17. The relationship management system of claim 1, wherein the relationship management server system is further configured to increase the score assigned to a relationship between a user and a contact in response to the occurrence of a telephone conversation between the user and the contact.
18. The relationship management system of claim 1, wherein the relationship management server system is further configured to increase the score assigned to a relationship between a user and a contact in response to the occurrence of a meeting between the user and the contact.
19. The relationship management system of claim 1, wherein the relationship management server system is further configured to modify the score assigned to a relationship between a user and a contact in response to the user requesting a predetermined action from the contact.
20. The relationship management system of claim 1, wherein the relationship management server system is further configured to score event information associated with the user and at least one of the contacts.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A plastic lid for commercial and industrial solid waste containers, comprising:
a central area having a single wall construction;
a set of perimeter edges having a substantially closed configuration substantially surrounding the central area, the set of perimeter edges having a substantially hollow double wall cross-sectional configuration joined to the central area, the substantially hollow double wall cross-sectional configuration including a top wall and a bottom wall, the cross-sectional configuration having a predetermined vertical extent;
a plurality of hinge lugs disposed along a rear edge of the set of perimeter edges, the hinge lugs having a height greater than the predetermined vertical extent; and
a front edge of the set of perimeter edges disposed to provide vertical clearance for the hinge lugs on the rear edge when the lid is stacked in alternating engagement with the edges of adjacent lids, the front edge including at least one portion wherein the top wall and the bottom wall of the substantially hollow double wall cross-sectional configuration are pressed together.
2. The plastic lid of claim 1, wherein the top of the substantially hollow perimeter edge is a substantial continuation of the central area.
3. The plastic lid of claim 1, wherein the hollow perimeter edge is substantially continuously joined to the central area.
4. The plastic lid of claim 1, wherein the central area also includes at least one reinforcing rib.

1. A semiconductor structure on a substrate comprising:
a downwards operating vertical NPN transistor formed on said substrate and having an epitaxial extrinsic base region, an emitter region, and a collector region, and
a downwards-operating vertical PNP transistor formed on said substrate having an epitaxial base region, an emitter region, and a collector region;
wherein said base region of said vertical NPN transistor comprises a first portion of a first layer and said base region of said vertical PNP transistor comprises a second portion of said first layer.
2. The semiconductor structure of claim 1, wherein said first layer comprises epitaxial silicon germanium (SiGe).
3. The semiconductor substrate of claim 1, wherein said epitaxial SiGe includes a first dopant type.
4. The semiconductor substrate of claim 3, wherein said first dopant type includes a p-type dopant.
5. The semiconductor substrate of claim 1, wherein a portion of said emitter of said PNP transistor comprises a portion of said second portion of said first layer.
6. The semiconductor substrate of claim 1, wherein an intrinsic base of said NPN transistor comprises said first portion of said first layer.
7. The semiconductor substrate of claim 1, wherein an extrinsic base of said NPN transistor comprises a first portion of a second layer and the emitter of said PNP transistor comprises a second portion of said second layer.
8. The semiconductor substrate of claim 7, wherein said second layer comprises polysilicon or silicon.
9. The semiconductor substrate of claim 8, wherein said polysilicon or silicon layer comprises a p-type dopant.
10. A semiconductor structure on a substrate comprising a downwards operating vertical PNP transistor formed on said substrate having a base region, an emitter region, and a collector region wherein said collector region of said vertical PNP transistor is formed on a same layer on said substrate as a collector region for a downwards operating vertical NPN transistor.
11. The semiconductor structure of claim 10, wherein said layer comprises epitaxial silicon germanium (SiGe).
12. The semiconductor structure of claim 10, wherein said layer comprises an epitaxial silicon germanium (SiGe) layer or a silicon layer.
13. The semiconductor substrate of claim 10, wherein said layer includes a first dopant type.
14. The semiconductor substrate of claim 13, wherein said first dopant type includes a p-type dopant or an n-type dopant.
15-26. (canceled)

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for preparing a phenolic compound, comprising:
providing a lignin depolymerization product; and
hydrogenating the lignin depolymerization product under iron oxide and hydrogen gas to prepare a phenolic compound.
2. The method for preparing a phenolic compound as claimed in claim 1, wherein the lignin depolymerization product comprises 4-methoxyphenol
o-methoxyphenol
2,6-dimethoxyphenol
or a combination thereof.
3. The method for preparing a phenolic compound as claimed in claim 1, wherein the iron oxide is triiron tetraoxide (Fe3O4).
4. The method for preparing a phenolic compound as claimed in claim 1, wherein the iron oxide has a particle size equal to or less than 5 \u03bcm.
5. The method for preparing a phenolic compound as claimed in claim 1, wherein the lignin depolymerization product is hydrogenated at a temperature of 160-360\xb0 C.
6. The method for preparing a phenolic compound as claimed in claim 1, wherein the lignin depolymerization product is hydrogenated at a pressure of hydrogen gas of 5-100 atm.
7. The method for preparing a phenolic compound as claimed in claim 1, wherein the lignin depolymerization product is hydrogenated at a space velocity of 10-60 h\u22121.
8. The method for preparing a phenolic compound as claimed in claim 1, wherein the phenolic compound is a crude phenolic composition.
9. The method for preparing a phenolic compound as claimed in claim 8, wherein the crude phenolic composition comprises phenol, methylphenol, dimethylphenol or a combination thereof.