Author: claimsbot

1. A tire air valve having the function of indicating tire pressure comprising:
an air valve casing formed with a stepped accommodating chamber in an interior, said stepped accommodating chamber having an inner wall provided with female threads, said air valve casing having an upper section of an outer wall provided with male threads, said stepped accommodating chamber having an upper section of an inner wall formed with an upper obliquely-conical surface and a lower section formed with a lower obliquely-conical surface;
a center post received in said stepped accommodating chamber of said air valve casing, said center post formed with an upper annular recess and a lower annular recess on an outer wall, said upper annular recess and said lower annular recess respectively being in an obliquely-conical shape, said center post having an upper end provided with a push block, said center post provided with a flange on a wall surface at a location between said upper annular recess and said push block, an upper sealing ring fitted on said upper annular recess and a lower sealing ring fitted on said lower annular recess of said center post, said upper sealing ring and said lower sealing ring being obliquely-conical shaped;
a lower locking block fixed around a lower section of said center post, said lower locking block provided with a stepped through hole, said stepped through hole having a lower section formed with an obliquely-conical surface for matching said lower sealing ring on said center post, said lower locking block having an outer wall disposed with an obliquely-conical annular recess, said annular recess fitted thereon with an obliquely-conical sealing ring matching said lower obliquely-conical surface of said air valve casing, a first spring fitted on said center post, said first spring having a lower end resisting an upper end of said lower locking block.
an upper locking block mounted around an intermediate section of said center post, said upper locking block having a lower end pushing against an upper end of said first spring, said upper locking block formed with a stepped through hole, said stepped through hole having a lower section provided with an obliquely-conical surface matching with said upper sealing ring on said center post, said upper locking block having an outer wall disposed with an obliquely-conical annular recess, said annular recess fitted thereon with an obliquely-conical sealing ring that matches said upper obliquely-conical surface of said air valve casing, a second spring fitted around said center post, said second spring having a lower end positioned in said stepped through hole of said upper locking block, said second spring having the lower end resisting said upper locking block, said second spring having an upper end pushing against said flange of said center post;
a fixed member received in said stepped accommodating chamber of said air valve casing, said fixed member having an underside formed with a recessed groove, said fixed member having a topside bored with an insert hole passing through said recessed groove, said fixed member provided with an air intake accommodating with said recessed groove, said fixed member having an outer wall provided with male threads to be threadably locked with said female threads in said stepped accommodating chamber of said air valve casing;
a cap assembled on said air valve casing, said cap made of transparent material, said cap having an upper portion formed into a transparent viewing window, said cap formed with an accommodating chamber in an interior, said accommodating chamber having an inner wall provided with female threads to be threadably locked with said male threads of said air valve casing, said accommodating chamber installed therein with an upper indicating member, a third spring and a lower indicating member, said upper indicating member formed with a recessed groove for receiving said third spring therein, said third spring having an upper end resisting against an inner side of said recessed groove, said upper indicating member having an upper portion of an outer wall formed into a low pressure region, said upper indicating member having a lower portion of an outer wall formed into a warning region, said lower indicating member mounted on outer side of said upper indicating member, said lower indicating member provided with a recessed hollow for receiving both said upper indicating member and said third spring therein, said third spring having a lower end resisting an inner side of said recessed hollow, said lower indicating member having an upper edge provided with a flange, said lower indicating member having an outer wall formed into a safety region, said lower indicating member having an underside pushing against said push block of said center post; and
a locking ring installed in said accommodating chamber of said cap, said locking ring bored with a through hole for said lower indicating member to be inserted therethrough, said locking ring provided with male threads to be threadably locked with said female threads of said cap.
2. A tire air valve having the function of indicating tire pressure as claimed in claim 1, wherein said lower locking block has an outer wall provided with an engage recess having a buffer washer fitted thereon.
3. A tire air valve having the function of indicating tire pressure as claimed in claim 1, wherein said low pressure region of said upper indicating member is marked with yellow color, said warning region marked with red color and said safety region marked with green color.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A suspension board with circuit comprising a metal supporting layer, an insulating base layer formed on the metal supporting layer, a conductor layer formed on the insulating base layer, an insulating cover layer formed on the conductor layer, and
a connection terminal portion comprising:
a first opening formed in the metal support layer and provided on a first side of the conductor layer;
a second opening formed in the insulating base layer and provided on the first side of the conductor layer, the second opening corresponding in location to the first opening;
a third opening formed in the insulating cover layer and provided on a second side of the conductor layer, the third opening corresponding in location to the second opening;

and
a flying lead portion comprising:
a conductor line that is formed from the conductor layer in an area that is exposed by the first opening, the second opening and the third opening, and
a reinforcing structure that is formed from at least one of the insulating base layer and the insulating cover layer, the reinforcing structure being provided in a longitudinal direction along the conductor line and not in a lateral direction between adjacent conductor lines for reinforcing the conductor line.
2. The suspension board with circuit according to claim 1, wherein the reinforcing portion is embedded in the conductor line.
3. The suspension board with circuit according to claim 1, wherein the reinforcing portion is formed continuously from the insulating base layer in the flying lead portion.
4. The suspension board with circuit according to claim 1, wherein the reinforcing portion is formed continuously from the insulating cover layer in the flying lead portion.

1. A semiconductor-based short wavelength infrared (SWIR) infrared detector sensitive to wavelengths shorter than 2.5 microns comprising:
a stack of semiconductor layers based on III-V materials forming a PIN photodiode, said stack comprising:
a naked electrical contact, called a lower electrical contact, serving as an optical window; and
a detection layer sensitive to said wavelengths, wherein
the lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate made of a III-V material such as InP or GaAs or of silicon or germanium.
2. The infrared detector according to claim 1, wherein the detection layer is made of GaInAs.
3. The infrared detector according to claim 2, wherein the lower contact comprises an (Al,As,Sb)-based alloy.
4. The infrared detector according to claim 2, wherein the so-called lower contact comprises an AlAs0.563Sb0.437 alloy.
5. The infrared detector according to claim 3, wherein the lower contact comprises at least one alternation of (Al,Ga)AsSb(AlGa)InAs layers.
6. The infrared detector according to claim 5, wherein the alternation of layers comprises at least about ten pairs of (Al,Ga)AsSb and (AlGa)InAs layers.
7. The infrared detector according to claim 1, further comprising:
a layer for matching the conduction bands of the lower contact and the sensitive layer.
8. The infrared detector according to claim 7, wherein the matching layer comprises a set of elementary matching layers comprising an alternation of (Al,Ga)AsSb(Al,Ga)InAs layers.
9. The infrared detector according to claim 1, wherein the detection layer is made of GaAs.
10. The infrared detector according to claim 1, wherein the detection layer is made of InP.
11. The infrared detector according to claim 9, wherein the lower contact comprises at least one layer of AlxGa1-xAs alloy with x lying between 0.42 and 1.
12. The infrared detector according to claim 10, wherein the lower contact comprises an (Al,As,Sb)-based alloy.
13. The infrared detector according to claim 10, wherein the lower contact comprises an AlAs0.563Sb0.437 alloy.
14. The infrared detector according to claim 10, wherein the so-called lower contact comprises at least one alternation of (Al,Ga)AsSb(AlGa)InAs layers.
15. The infrared detector according to claim 10, wherein the lower contact comprises at least about ten pairs of (Al,Ga)AsSb and (AlGa)InAs layers.
16. A fabrication process for fabricating an SWIR infrared detector according to claim 1 comprising:
producing, on the surface of an InP substrate, the lower contact;
producing the detection layer on the surface of the lower electrical contact;
producing a p-type doped upper layer made of a III-V semiconductor and a contact, called the upper contact; and
removing said substrate from the stack produced beforehand.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor element, comprising:
a substrate having a pair of main surfaces that face each other;
a semiconductor layer of a first conductivity type on one of the main surfaces of said substrate;
a semiconductor layer of a second conductivity type on said semiconductor layer of the first conductivity type;
an active layer formed between said semiconductor layer of the first conductivity type and said semiconductor layer of the second conductivity type; and
a reflective layer formed on said semiconductor layer of the second conductivity type for reflecting light from said active layer toward said semiconductor layer of the second conductivity type,
wherein the other main surface of said substrate is used as the main light emitting surface,
wherein a translucent conductive layer is formed between said reflective layer and the semiconductor layer of the second conductivity type, and an uneven interface is formed as the interface between said translucent conductive layer and said reflective layer.
2. The semiconductor element according to claim 1 wherein the interface between said translucent conductive layer and said semiconductor layer of the second conductivity type is an approximately flat and smooth surface.
3. The semiconductor element according to claim 1, wherein said uneven surface is provided with inclined surfaces of which the angle of inclination is not greater than 60\xb0 relative to the normal line to the main light emitting surface.
4. The semiconductor element according to claim 1, wherein said uneven surface is in the form of continuous cylindrical lenses.
5. The semiconductor element according to claim 1, wherein said translucent conductive layer is an oxide film that includes at least one of element C selected from a group consisting of at least zinc, indium, tin and magnesium.
6. The semiconductor element according to claim 5, wherein said oxide film includes a trace element D in addition to element C.
7. The semiconductor element according to claim 6, wherein said trace element D is at least one of element selected from among tin, zinc, gallium and aluminum.
8. The semiconductor element according to claim 7, wherein the concentration of said trace element D in the vicinity of the interface between said semiconductor layer and said oxide film is higher than that of the trace element D in the other portion of the film in said oxide film.
9. The semiconductor element according to claim 7, wherein the concentration of said trace element D in the vicinity of the interface between said semiconductor layer and said oxide film is higher than that of said trace element D in the vicinity of the surface opposite to said interface.
10. The semiconductor element according to claim 6, wherein said oxide film includes element D of which the amount is not greater than 20% of the amount of element C.
11. The semiconductor element according to claim 1, wherein said translucent conductive layer is made of ITO.
12. The semiconductor element according to claim 1 wherein said reflective layer includes at least one of element selected from among aluminum, titanium, platinum, rhodium, silver, palladium, iridium, silicon and zinc.
13. The semiconductor element according to claim 1, wherein said reflective layer is a metal film that includes aluminum.
14. The semiconductor element according to claim 1, wherein said reflective layer is made of a dielectric that includes at least any of Si, Zn and Ti.
15. The semiconductor element according to claim 1, wherein the film thickness of said transluent conductive layer is approximately integer times of \u03bb4, wherein the wavelength of light emitted from said active layer is \u03bb.
16. The semiconductor element according to claim 1, wherein the film thickness of said translucent conductive layer is not greater than 1 \u03bcm.
17. The semiconductor element according to claim 1 wherein said reflective layer is also formed in a plane that crosses the main surfaces of substrate.
18. The semiconductor element according to claim 1, wherein at least a portion of the surface of said semiconductor layer that crosses the main surfaces of said substrate is: inclined.
19. The semiconductor element according to claim 1, wherein said semiconductor layer of the first conductivity type is an n-type semiconductor layer and the semiconductor layer of the second conductivity type is a p-type semiconductor layer.
20. The semiconductor element according to claim 1, wherein said semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type are nitride semiconductor layers.