Author: claimsbot

1. A fire door stop system used with a fire door assembly that includes a fire door and a fire door frame having a soffit that forms an overlap surface between the fire door and the fire door frame, the fire door stop system comprising:
a profile strip that is configured to be fastenable to the soffit; and
a seal consisting of an intumescent material to form an intumescent seal between the profile strip and the soffit;
wherein the profile strip has a flange that, when fastened to the soffit, extends outward from the soffit, so as to form an extended overlap surface between the fire door and the fire door frame, the flange having a face surface that faces the fire door; and
wherein the seal is affixed to the face surface of the flange so as to form the intumescent seal between the flange and the soffit under non-fire conditions when the fire door is closed.
2. The fire door stop system of claim 1, wherein the soffit has a fire door stop surface against which the fire door closes;
wherein the profile strip is a flat strip; and
wherein the flange is formed by folding an edge of the profile strip.
3. The fire door stop system of claim 2, wherein the profile strip is constructed of 22 gauge steel.
4. The fire door stop system of claim 1, further comprising a horizontal edge protector, wherein the fire door has a front face, a rear face, and a horizontal edge face at a top and at a bottom of the fire door, and wherein the horizontal edge protector has a three-sided channel shape that fits over the horizontal edge face and extends a distance onto the front face and the rear face, so as to protect the horizontal edge face at the top andor at the bottom of the fire door.
5. The fire door stop system of claim 4, wherein the horizontal edge protector is a bottom-edge extension that is fastenable to a bottom edge of the fire door and is adjustable in its placement on the bottom edge of the fire door, so as to reduce a gap between the bottom edge of the fire door and a finished floor surface.
6. The fire door stop system of claim 1, further comprising a latch protector that is a steel plate with a cutout dimensioned to accommodate dimensions of a striker plate opening that is provided on a striker plate that is mountable on the fire door frame, wherein the latch protector is mountable between the striker plate and the fire door frame.
7. The fire door stop system of claim 1, further comprising a vertical edge protector, wherein the fire door has a front face, a rear face, and a vertical edge face along each side of the fire door, and wherein the vertical edge protector is wrapped around the vertical edge face of at least one side of the fire door.
8. The fire door stop system of claim 1, wherein the profile strip is configured to remedy non-compliant fire doors and fire door frames having clearances greater than 316\u2033 for steel doors and greater than \u215b\u2033 for wood doors.
9. The fire door stop system of claim 1, wherein the profile strip is configured to remedy non-compliant fire doors and fire door frames having clearances up to \xbd\u2033 for steel doors and up to \u215c\u2033 for wood doors.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A contact for a semiconductor device component, comprising:
a core comprising a polymer and configured to protrude from the semiconductor device component in a generally transverse orientation relative to a plane of the semiconductor device component; and
a conductive coating on at least a portion of the core.
2. The contact of claim 1, wherein the core is flexible and resilient.
3. The contact of claim 1, wherein the core is substantially rigid.
4. The contact of claim 1, wherein the core comprises a plurality of adjacent, mutually adhered regions of the polymer.
5. The contact of claim 1, wherein the polymer comprises a photoimagable polymer.
6. The contact of claim 1, wherein the core includes a base, an intermediate section, and a contact tip.
7. The contact of claim 6, wherein the intermediate section is flexible and resilient.
8. The contact of claim 6, wherein the base is configured to be secured to the semiconductor device component.
9. The contact of claim 6, wherein the conductive coating covers at least a portion of the contact tip and at least a portion of the intermediate section.
10. The contact of claim 9, wherein the conductive coating substantially covers the contact tip.
11. The contact of claim 9, wherein the contact tip is configured to electrically communicate with another contact of another semiconductor device component.
12. The contact of claim 9, wherein the conductive coating also covers at least a portion of the base.
13. The contact of claim 12, wherein a portion of the conductive coating on the base is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
14. The contact of claim 9, wherein the portion of the conductive coating on the intermediate section is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
15. The contact of claim 6, wherein the contact tip is enlarged relative to the intermediate section.
16. The contact of claim 1, wherein the conductive coating substantially covers the core.
17. The contact of claim 1, wherein the conductive coating comprises a plurality of layers of conductive material.
18. The contact of claim 1, wherein the core protrudes from a contact pad of the semiconductor device component.
19. The contact of claim 1, wherein the core comprises a filament.
20. A contact for a semiconductor device component, comprising:
a core comprising a filament comprising dielectric material and configured to protrude from the semiconductor device component in a generally transverse orientation relative to a plane of the semiconductor device component; and
a conductive coating on at least a portion of the core.
21. The contact of claim 20, wherein the core is flexible and resilient.
22. The contact of claim 20, wherein the core is substantially rigid.
23. The contact of claim 20, wherein the core comprises a plurality of adjacent, mutually adhered regions comprising the dielectric material.
24. The contact of claim 23, wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.
25. The contact of claim 20, wherein the dielectric material comprises a polymer.
26. The contact of claim 25, wherein the polymer comprises a photoimagable polymer.
27. The contact of claim 20, wherein the core includes a base, an intermediate section, and a contact tip.
28. The contact of claim 27, wherein the intermediate section is flexible and resilient.
29. The contact of claim 27, wherein the base is configured to be secured to the semiconductor device component.
30. The contact of claim 27, wherein the conductive coating covers at least a portion of the contact tip and at least a portion of the intermediate section.
31. The contact of claim 30, wherein the conductive coating substantially covers the contact tip.
32. The contact of claim 31, wherein the contact tip is configured to electrically communicate with a contact of another semiconductor device component.
33. The contact of claim 30, wherein the conductive coating also covers at least a portion of the base.
34. The contact of claim 33, wherein a portion of the conductive coating on the base is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
35. The contact of claim 30, wherein the portion of the conductive coating on the intermediate section is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
36. The contact of claim 27, wherein the contact tip is enlarged relative to the intermediate section.
37. The contact of claim 20, wherein the conductive coating substantially covers the core.
38. The contact of claim 20, wherein the conductive coating comprises a plurality of contiguous regions of conductive material.
39. The contact of claim 38, wherein the plurality of contiguous regions comprises a plurality of layers.
40. The contact of claim 20, wherein the core is configured to protrude from a contact pad of the semiconductor device component.
41. A contact for a semiconductor device component, comprising:
a core comprising a dielectric material configured to be secured to and protrude from a contact pad of the semiconductor device component; and
a conductive coating on at least a portion of the core.
42. The contact of claim 41, wherein the core is flexible and resilient.
43. The contact of claim 41, wherein the core is substantially rigid.
44. The contact of claim 41, wherein the core comprises a plurality of adjacent, mutually adhered regions comprising the dielectric material.
45. The contact of claim 44, wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.
46. The contact of claim 41, wherein the dielectric material comprises a polymer.
47. The contact of claim 46, wherein the polymer comprises a photoimagable polymer.
48. The contact of claim 41, wherein the core includes a base, an intermediate section, and a contact tip.
49. The contact of claim 48, wherein the intermediate section is flexible and resilient.
50. The contact of claim 48, wherein the base is configured to be secured to the semiconductor device component.
51. The contact of claim 48, wherein the conductive coating covers at least a portion of the contact tip and at least a portion of the intermediate section.
52. The contact of claim 51, wherein the conductive coating substantially covers the contact tip.
53. The contact of claim 52, wherein the contact tip is configured to electrically communicate with a contact of another semiconductor device component.
54. The contact of claim 51, wherein the conductive coating also covers at least a portion of the base.
55. The contact of claim 54, wherein a portion of the conductive coating on the base is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
56. The contact of claim 51, wherein the portion of the conductive coating on the intermediate section is configured to electrically communicate with a corresponding conductive element of the semiconductor device component.
57. The contact of claim 48, wherein the contact tip is enlarged relative to the intermediate section.
58. The contact of claim 41, wherein the conductive coating substantially covers the core.
59. The contact of claim 41, wherein the conductive coating comprises a plurality of contiguous regions of conductive material.
60. The contact of claim 59, wherein the plurality of contiguous regions comprises a plurality of layers.

1. A metal adsorbent fiber comprising a polyamine polymer which has repeating units of ethyleneimine and N-carboxy-methylated ethyleneimine represented by the following formula (1) and in which the average molecular weight of polyethyleneimine forming a chain frame is 600 to 150,000
wherein n represents a positive integer and m represents a positive integer; the polyamine polymer being incorporated into a cellulose fiber by incorporating the polyamine polymer into a solution of a raw material for the cellulose fiber to form a spinning solution and forming the spinning solution into a fiber by wet blend-spinning.
2. The metal adsorbent fiber according to claim 1, characterized in that an amount of the polyamine polymer blended into the raw material for the cellulose is 1-30 weight percent.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An actuator device, comprising:
a stack of piezoelectric-ferroelectric active layers separated by surface electrodes, wherein at least a few of said surface electrodes are independently addressable such that at least two active layers are biasable by different voltages; and
a voltage source and controller being in electrical communication with said at least few surface electrodes and configured to generate said voltages, wherein said voltages induce a nonlinear ferroelectric effect on at least one of said layers.
2. A method, comprising applying at least two different voltages to an actuator device which comprises a stack of piezoelectric-ferroelectric active layers separated by surface electrodes, such that said at least two voltages respectively bias at least two different active layers, and induce a nonlinear ferroelectric effect on at least one of said layers.
3. The method according to claim 1, wherein said voltages inducing said nonlinear ferroelectric effect are applied momentarily.
4. The device according to claim 1, wherein at least one layer is applied by a voltage inducing a nonlinear ferroelectric effect in said layer, and at least one layer is applied by a voltage inducing a linear inverse piezoelectric effect in said layer.
5. The device according to claim 4, wherein said voltage inducing said nonlinear ferroelectric effect is applied momentarily, and said voltage inducing said linear inverse piezoelectric effect is applied continuously.
6. The device according to claim 4, wherein a number of layers applied by said voltage inducing said linear inverse piezoelectric effect is selected so as to compensate a minimal discontinuous displacement generated by said nonlinear ferroelectric effect.
7. The device according to claim 1, further comprising a loop control unit for controlling voltages applied to induce a linear inverse piezoelectric effect in response to displacements generated by a nonlinear ferroelectric effect.
8. The device according to claim 4, further comprising controlling voltages applied to induce said linear inverse piezoelectric effect according to displacements generated by said nonlinear ferroelectric effect.
9. The device according to claim 7, wherein said displacements are sensed by an external sensor configured to sense said displacements.
10. The device according to claim 7, wherein said displacements are sensed by at least one piezoelectric-ferroelectric layer which is part of the stack and which is not electrically biased during said sensing.
11. The device according to claim 1, wherein the actuator device further comprises a prestressing element positioned in physical contact with said layers and selected to apply mechanical stress on said layers.
12. The device according to claim 1, wherein said stack of piezoelectric-ferroelectric active layers is interposed between a top edge plate and a bottom edge plate, and wherein the actuator device further comprises a prestressing element positioned in physical contact with at least one of said edge plates and selected to apply mechanical stress on said plate.
13. The device according to claim 11, wherein said prestressing element is shaped as a bar introduced along a thickness direction of said stack through bores formed in said layers and said surface electrodes.
14. The device according to claim 11, wherein said prestressing element is made of a material which is elastic under a characteristic deformation range of said piezoelectric-ferroelectric layers.
15. The device according to claim 11, wherein said prestressing element is selected to apply on said layers a stress within a predetermined range of stresses defined between an upper bound and a lower bound, said upper bound corresponding to a polarized domain state of said layers and said lower bound corresponding to a depoled domain state of said layers.
16. The device according to claim 1, wherein said stack is electrically partitioned to a plurality of sub-stacks of piezoelectric-ferroelectric layers in a manner such that at least two sub-stacks are electrically decoupled, but for each sub-stack all surface electrodes of said sub-stack are electrically coupled.
17. The device according to claim 16, wherein at least a few sub-stacks have equal number of layers.
18. The device according to claim 16, wherein at least a few sub-stacks have different numbers of layers.
19. The device according to claim 16, wherein said plurality of sub-stacks comprises N sub-stacks each having a different number of layers which equals 2k, k being an integer satisfying k\u2266N.
20. A system, comprising an actuatable device and the actuator device according to claim 1.
21. The system of claim 20, wherein said actuatable device comprises at least one of an optical alignment device, a pump injector, an interferometric dilatometer, a deformable mirror, a deformable optical grid, a microscope stage, a guide device, a cutting device, a valve, a VTR head, a swing CCD image sensor, a micro-angle adjusting device, a micro-angle adjusting device, an inkjet head, a dot-matrix printer head, a relay, an ultrasound generator, an aerodynamic steering wing, a rotor blade, a welding device, a suspension device, a vibration dumping system, a parallel robotic system, a hard disk drive head supporter arm, a nanofocusing Z-Drive, an optic fiber, and a switch.
22. The method of claim 2, wherein said at least two voltages comprise a first voltage and a second voltage and wherein said first voltage biases a single active layer.
23. A method, comprising applying to an actuator device voltage at sufficient amount so as to generate displacement in said actuator device, wherein said actuator device comprises a stack of piezoelectric-ferroelectric active layers separated by surface electrodes, wherein at least a few of said surface electrodes are independently addressable, and wherein said voltage is applied such as to induce a nonlinear ferroelectric effect on at least one of said layers.