Author: claimsbot

1. Cosmetic or dermatological composition, characterized in that it comprises, in a physiologically acceptable medium:
at least one alkynyl carbamate of formula (I) below:
3
in which:
X denotes a halogen atom
R denotes a hydrogen atom,
an alkyl group,
a hydroxyalkyl group,

and at least one polyol chosen from non-etherified polyols, C1-C10 (poly)alkyl or C2-C20 (poly)alkenyl polyol ethers and glycosyl polyol ethers; the polyol being saturated or unsaturated, linear, branched or cyclic, bearing or not bearing a hetero atom, and bearing or not bearing additional chemical functions chosen from carbonyl and carboxyl functions.
2. Composition according to claim 1, characterized in that it contains at least one compound of formula (I) in which X denotes an iodine atom and R denotes an alkyl radical containing from 1 to 4 carbon atoms.
3. Composition according to claim 1 or 2, characterized in that the compound of formula (I) is 3-iodo-2-propynyl butylcarbamate.
4. Composition according to any one of claims 1 to 3, characterized in that the polyol is chosen from erythritol, arabitol, adonitol, sorbitol, dulcitol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, 1,5-pentanediol, 2,4-pentanediol, 2-methyl-2,4-pentanediol, 1,6-hexanediol, 2,3-dimethyl-2,3-butanediol, 2,2-diethyl-1,3-propanediol, 2-ethyl-1,3-hexanediol, 2,2,4-trimethyl-1,3-pentanediol, 2-ethyl-2-butyl-1,3-propanediol, 1,2,4-butanetriol, 1,2,6-hexanetriol, 2,2-dihydroxymethyl-1-butanol, tetramethylolmethane, glyceryl a-monomethyl ether, glyceryl a-mono-n-butyl ether and 2-O–D-glucopyranosyl-L-ascorbic acid.
5. Composition according to any one of claims 1 to 3, characterized in that the polyol is 3-(2-ethylhexyloxy)-1,2-propanediol.
6. Composition according to any one of claims 1 to 5, characterized in that the compound of formula (I) and the polyol are simultaneously present in individual proportions of between 0.001% and 10% by weight relative to the total weight of the composition.
7. Composition according to any one of claims 1 to 6, characterized in that the compound of formula (I) and the polyol are simultaneously present in individual proportions of between 0.01% and 5% by weight relative to the total weight of the composition.
8. Composition according to any one of claims 1 to 7, characterized in that the weight ratio of compound (I) to the polyol ranges from 0.01 to 100.
9. Composition according to any one of claims 1 to 8, characterized in that the weight ratio of compound (I) to the polyol ranges from 0.05 to 5.
10. Composition according to any one of claims 1 to 9, characterized in that it has a pH of between 2 and 12.
11. Composition according to any one of claims 1 to 10, characterized in that the physiologically acceptable medium consists of water or of a mixture of water and at least one organic solvent chosen from C1-C4 lower alcohols, alkylene glycol, ethylene glycol monobutyl ether, and propylene glycol and dipropylene glycol mono(or di)ethyl(or methyl) ether, present, in proportions of between 1 and 80% by weight relative to the total weight of the composition.
12. Composition according to any one of claims 1 to 11, characterized in that it is in the form of lotions, shampoos, mousses, creams, gels, sticks, sprays, balms, powders or solid or liquid soaps.
13. Composition according to any one of claims 1 to 12, characterized in that the composition contains additives other than the compounds defined in claim 1, chosen from anionic, amphoteric, zwitterionic or nonionic surfactants, suspending agents, anionic, nonionic, cationic or amphoteric polymers, proteins, silicone oils, waxes, resins andor gums, acidifying or basifying agents, preserving agents, fragrances, antibacterial agents, antifungal agents or other adjuvants commonly used in cosmetics or dermatology.
14. Use of a composition according to any one of claims 1 to 13, for the cosmetic treatment of the hair and the scalp.
15. Use of a composition as defined in any one of claims 1 to 13, as an antifungal cosmetic composition.
16. Use of a composition as defined in any one of claims 1 to 13, as an antidandruff cosmetic composition.
17. Use of an alkynyl carbamate as defined in one of claims 1 to 3, and of at least one polyol as defined in one of claims 1, 4 and 5, for the preparation of a dermatological composition intended for the treatment of inflammatory andor desquamating skin disorders associated with Malassezia spp. and more particularly for antidandruff treatment.
18. Cosmetic treatment process for eliminating dandruff from the hair and the scalp, characterized in that the cosmetic composition defined according to any one of claims 1 to 13 is applied to wet or dry hair, and this is optionally followed by a rinsing operation.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for producing a deep-nested embossed product comprising:
a first embossing member having a first surface and a plurality of first embossing elements extending from the first surface, the plurality of first embossing elements being discrete embossing elements and being disposed in a first non-random pattern;
a second embossing member having a second surface and a plurality of second embossing elements extending from the second surface, the plurality of second embossing elements including at least one linear embossing element and being disposed in a second non-random pattern wherein the second non-random pattern is coordinated with the first non-random pattern; and,
the first embossing member and the second embossing member being aligned such that the respective coordinated first non-random pattern and second non-random pattern nest together such that they engage each other to a depth of greater than about 0.01 mm;
wherein the second embossing member includes a plurality of linear embossing elements in a second pattern and wherein the first embossing elements and the second embossing elements, when engaged with each other, provide an engagement embossing pattern wherein at least one of the linear embossing elements is separated from every other linear embossing elements by at least one first embossing element; and,
wherein the at least one linear embossing element includes an at least partially enclosed region and the first embossing pattern includes at least one first embossing element that, when engaged with the second embossing pattern, is disposed within the at least partially enclosed region of the linear embossing element.
2. The apparatus of claim 1 wherein the first embossing member includes a first embossing cylinder and the second embossing member includes a second embossing cylinder, the first embossing cylinder being rotatable on a first axis and the second embossing cylinder being rotatable on a second axis, the first axis and the second axis being generally parallel to one another.
3. The apparatus of claim 1 wherein the first embossing member includes a first plate and the second embossing member includes a second embossing plate.
4. The apparatus of claim 1, wherein the second embossing member includes only linear embossing elements.
5. The apparatus of claim 1, wherein the discrete first embossing elements are generally circular or oval in shape and have a distal end located away from the first surface, the distal end having a diameter or major length of less than about 5.0 mm.
6. The apparatus of claim 1, wherein the linear embossing elements have a length dimension and a width dimension and the ratio of the length dimension to the width dimension is at least about 4:1.
7. The apparatus of claim 1, wherein the first embossing elements and the second embossing elements engage each other to a depth of greater than about 1.0 mm.
8. The apparatus of claim 1, wherein the first embossing elements and the second embossing elements engage each other to a depth of greater than about 3.0 mm.
9. The apparatus of claim 1, wherein the first embossing elements comprise a distal end a sidewall, at least a portion of the distal end and at least a portion of the sidewall meeting at a transition region, wherein the transition region has a radius of curvature of greater than about 0.075 mm.
10. The apparatus of claim 9, wherein the first embossing elements and the second embossing elements engage each other to a depth of greater than about 1.5 mm and the radius of curvature of the transition region is greater than about 0.5 mm.
11. The apparatus of claim 9 wherein the distal end of at least one of the first embossing elements is generally curved.
12. The apparatus of claim 1, wherein the second embossing elements comprise a distal end and a pair of sidewalls, at least a portion of the distal end and at least one of the pair of sidewalls meeting at a transition region, wherein the transition region has a radius of curvature of greater than about 0.075 mm.
13. The apparatus of claim 12, wherein the first embossing elements and the second embossing elements engage each other to a depth of greater than about 1.5 mm and the radius of curvature of the transition region is greater than about 0.5 mm.
14. The apparatus of claim 1 wherein at least one of the linear embossing elements has a first width and a second width, wherein the first width is smaller than the second width and provides a space into which at least one discrete embossing element is disposed when the first embossing member and the second embossing member are engaged.
15. The apparatus of claim 14 wherein the second embossing member includes at least two adjacent linear embossing elements each with a first width and a second width, wherein the first width is smaller than the second width and the linear embossing elements are aligned such that the first width of one of the at least two adjacent linear embossing elements and the first width of the second of the at least two linear embossing elements together provide a space into which at least one discrete embossing element is disposed when the first embossing member and the second embossing member are engaged.
16. The apparatus of claim 11, wherein every linear embossing element is separated from every other linear embossing element by at least one first embossing element.
17. The apparatus of claim 16, wherein the second embossing pattern includes a plurality of linear embossing elements including at least partially enclosed regions and the first embossing pattern includes a plurality of first embossing elements that, when engaged with the second embossing pattern, at least some of the plurality of first embossing elements are disposed within the at least partially enclosed regions of the linear embossing element.
18. The apparatus of claim 1, wherein the at least one linear embossing element includes an at least partially enclosed region and the first embossing pattern includes at least one first embossing element that, when engaged with the second embossing pattern, is disposed within the at least partially enclosed region of the linear embossing element.
19. The apparatus of claim 18, wherein the second embossing pattern includes a plurality of linear embossing elements including at least partially enclosed regions and the first embossing pattern includes a plurality of first embossing elements that, when engaged with the second embossing pattern, at least some of the plurality of first embossing elements are disposed within the at least partially enclosed regions of the linear embossing elements.

1. A semiconductor memory device comprising:
a semiconductor substrate;
a cell array layer which is formed above the semiconductor substrate and includes a first wiring and a second wiring, which cross each other, and a memory cell connected to the first and second wirings at an intersection thereof;
a third wiring formed on a first wiring layer below the cell array layer;
a fourth wiring formed on a second wiring layer above the cell array layer; and
a contact extending in a stacking direction for connecting the third wiring and the fourth wiring, wherein
the semiconductor memory device further comprises
a redundant wiring layer being formed between the first wiring layer and the second wiring layer,
the redundant wiring layer being formed with a redundant wiring having a portion extending in the same direction as at least one of the third wiring and the fourth wiring, and
the third wiring and the redundant wiring, and the fourth wiring and the redundant wiring being connected by a plurality of contacts arranged along the portion extending in the same direction as the third wiring or the fourth wiring.
2. The semiconductor memory device according to claim 1, wherein
the redundant wiring layer is formed on the same wiring layer as that of at least one of the first wiring and the second wiring of the memory cell layer.
3. The semiconductor memory device according to claim 1, wherein
a plurality of redundant wiring layers are provided, and
the redundant wirings are formed on the different redundant wiring layers and connected to each other by the plurality of contacts.
4. The semiconductor memory device according to claim 1, wherein
the third wiring is orthogonal to the fourth wiring, and
the redundant wiring is formed into an L-shape having a portion extending in the same direction as the third wiring and a portion extending in the same direction as the fourth wiring.
5. The semiconductor memory device according to claim 4, wherein
the L-shaped redundant wiring is shifted in the same direction as the third wiring and in the same direction as the fourth wiring with respect to the other L-shaped redundant wiring adjacent to the redundant wiring.
6. The semiconductor memory device according to claim 3, wherein
the third wiring is orthogonal to the fourth wiring,
a part of the redundant wiring is formed into an L-shape having a portion extending in the same direction as the third wiring and a portion extending in the same direction as the fourth wiring, and
a part of the other redundant wiring is formed into a reed shape extending in the same direction as the third wiring or the fourth wiring.
7. The semiconductor memory device according to claim 1, wherein
the memory cell includes a variable resistor.
8. The semiconductor memory device according to claim 7, wherein
the memory cell includes a diode connected to the variable resistor in series.
9. A semiconductor memory device comprising:
a semiconductor substrate;
a cell array layer which is formed above the semiconductor substrate and includes a first wiring and a second wiring, which cross each other, and a memory cell connected to the first and second wirings at an intersection thereof;
a third wiring formed on a first wiring layer below the cell array layer;
a fourth wiring formed on a second wiring layer above the cell array layer; and
a contact extending in a stacking direction for connecting the third wiring and the fourth wiring, wherein
the semiconductor memory device further comprises
a redundant wiring layer being formed between the first wiring layer and the second wiring layer, and
the third wiring and the redundant wiring, and the fourth wiring and the redundant wiring being connected by a contact having a width, in the direction in which the third wiring or the fourth wiring extends, greater than a width of the third wiring or the fourth wiring.
10. The semiconductor memory device according to claim 9, wherein
the redundant wiring layer is formed on the same wiring layer as that of at least one of the first wiring and the second wiring of the memory cell layer.
11. The semiconductor memory device according to claim 9, wherein
the third wiring and the fourth wiring are respectively extend in the directions which are at right angles to each other, and
a width and a length of the redundant wiring are set to be greater than the widths of the third wiring and the fourth wiring.
12. The semiconductor memory device according to claim 9, wherein
the redundant wiring is formed to have a rectangular shape.
13. A semiconductor memory device comprising:
a semiconductor substrate;
a plurality of memory blocks formed above the semiconductor substrate in a matrix and each of which includes stacked cell array layers, the cell array layer including a first wiring and a second wiring, which cross each other, and a memory cell connected to the first and second wirings at an intersection thereof;
a third wiring formed on a first wiring layer below the cell array layer;
a fourth wiring formed on a second wiring layer above the cell array layer; and
a contact extending in a stacking direction for connecting the third wiring and the fourth wiring, wherein
the semiconductor memory device further comprises
a redundant wiring layer being formed between the first wiring layer and the second wiring layer,
the redundant wiring being formed on the redundant wiring layer and having a portion extending in the same direction as at least one of the third wiring and the fourth wiring, and
the third wiring and the redundant wiring, and the fourth wiring and the redundant wiring being connected by a plurality of contacts arranged along the portion extending in the same direction as the third wiring or the fourth wiring.
14. The semiconductor memory device according to claim 13, wherein
the redundant wiring layer is formed on the same wiring layer as that of at least one of the first wiring and the second wiring of the memory cell layer.
15. The semiconductor memory device according to claim 13, wherein
a plurality of redundant wiring layers are provided, and
the redundant wirings are formed on the different redundant layers are connected to each other by the plurality of contacts.
16. The semiconductor memory device according to claim 13, wherein
the third wiring is orthogonal to the fourth wiring, and
the redundant wiring is formed into an L-shape having a portion extending in the same direction as the third wiring and a portion extending in the same direction as the fourth wiring.
17. The semiconductor memory device according to claim 16, wherein
the L-shaped redundant wiring is shifted in the same direction as the third wiring and in the same direction as the fourth wiring with respect to the other L-shaped redundant wiring adjacent to the redundant wiring.
18. The semiconductor memory device according to claim 15, wherein
the third wiring is orthogonal to the fourth wiring,
a part of the redundant wiring is formed into an L-shape having a portion extending in the same direction as the third wiring and a portion extending in the same direction as the fourth wiring, and
a part of the other redundant wiring is formed into a reed shape extending in the same direction as the third wiring or the fourth wiring.
19. The semiconductor memory device according to claim 13, wherein
the redundant wiring is provided between the adjacent memory blocks.
20. The semiconductor memory device according to claim 13, wherein
the contact is provided in a contact area between the adjacent memory blocks.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A hinge mechanism comprising:
first and second chock plates and an adjustable shaft, each of the chock plates including an aperture in the form of a figure eight, having similar first and second circular portions connected by a neck portion of a width less than the diameter of the circular portions, and the shaft longitudinally adjustable between a first retracted position in which the sections of the shaft aligned with each of the chock plates have a cross-section which corresponds to the circular portions of the aperture and a second extended position in which the section of the shaft aligned with each of the chock plates have a cross-section of a diameter which is less than the width of neck portion.
2. A hinge mechanism according to claim 1, the shaft comprising:
a set of two cam rams, one ram mounted at either end of a pivot shaft, each of the cam rams comprising a cylinder, a ram shaft extending through the cylinder and slideable therein and a circular ram plate mounted on a first end of the ram shaft, the ram shaft having a diameter is less than the width of neck portion and the cam plate having a cross-section which corresponds to one of the circular portions of the figure eight aperture.
3. An arrangement for the raising and lowering of a mast, which comprises an upper mast portion and a base, wherein the upper mast portion is rotatable about a horizontal pivot axis, located in the base of the mast, the arrangement comprising:
(i) docking means for restraining the upper mast portion against rotation;
(ii) attachment for attaching drive means for driving the docking means between a first engaged configuration wherein the upper mast portion is restrained against rotation and a second disengaged configuration wherein the upper mast portion is free to rotate; and
(iii) locking means selectable via an intermediate unlocked configuration between a first locked configuration wherein the docking means is engaged and a second unlocked configuration wherein the docking means is disengaged,
characterized in that the locking means comprises a hinge mechanism which comprises first and second chock plates and an adjustable shaft, each of the chock plates including an aperture in the form of a figure eight having similar first and second circular portions connected by a neck portion of a width less than the diameter of the circular portions and the shaft is longitudinally adjustable between a first retracted position in which the sections of the shaft aligned with each of the chock plates have a cross-section which corresponds to the circular portion of the aperture and a second extended position in which the sections of the shaft aligned with each of the chock plates have a cross-section of a diameter which is less than the width of neck portion.
4. An arrangement according to claim 3 characterized in that the shaft comprising:
a set of two cam rams, one ram mounted at either end of a pivot shaft, each of the cam rams comprising a cylinder, a ram shaft extending through the cylinder and slideable therein and a circular cam plate mounted on a first end of the ram shaft, the ram shaft having a diameter which is less than the width of neck portion and the cam plate having a cross-section which corresponds to a circular portion of the figure eight aperture.