Author: claimsbot

1. A system comprising:
a plurality of reactors coupled by flow lines, wherein each reactor comprises a reforming catalyst;
a feed header coupled to the plurality of reactors by a plurality of feed lines;
an effluent header coupled to the plurality of reactors by a plurality of effluent lines; and
a plurality of valves disposed in the flow lines, the feed lines, and the effluent lines,
wherein the plurality of valves are capable of being dynamically operated to create a first serial flow path through the plurality of reactors, wherein a first reactor of the plurality of reactors is adjacent to a second reactor of the plurality of reactors in the first serial flow path,
wherein the plurality of valves are further configured to dynamically reconnect the plurality of reactors to create a second serial flow path through the plurality of reactors, wherein the first reactor is not adjacent to the second reactor in the second serial flow path.
2. The system of claim 1, wherein the plurality of valves are further configured to bypass at least one reactor of the plurality of reactors from the remaining reactors of the plurality of reactors.
3. The system of claim 1, wherein the reforming catalyst comprising a zeolite, and wherein the reforming catalyst is capable of converting at least a portion of a hydrocarbon stream to aromatic hydrocarbons.
4. The system of claim 1, further comprising a sulfur removal system upstream of the plurality of reactors.
5. The system of claim 1, wherein a sulfur removal system is not disposed upstream of the plurality of reactors.
6. The system of claim 1, wherein the first reactor is upstream of the second reactor in the first serial flow path, and wherein the first reactor is downstream of the second reactor in the second serial flow path.
7. The system of claim 6, wherein the reforming catalyst in the first reactor has a lower activity than an activity of the reforming catalyst in the second reactor when the plurality of reactors are configured in the first serial flow path.
8. The system of claim 1, wherein the first reactor is a first upstream reactor in the first serial flow path, and wherein the first reactor is a last downstream reactor in the second serial flow path.
9. The system of claim 1, wherein the reforming catalyst comprises at least one Group VIII metal and a zeolitic support.
10. The system of claim 9, wherein the least one Group VIII metal comprises platinum and the zeolitic support comprises silica bound L-zeolite.
11. The system of claim 1, wherein the reforming catalyst comprises one or more halogens.
12. The system of claim 1, wherein the reforming catalyst comprises a zeolite, and wherein the reforming catalyst is capable of converting at least a portion of a hydrocarbon stream to aromatic hydrocarbons in one or more of the plurality of reactors.
13. A system comprising:
a plurality of reactor-furnace pairs coupled by flow lines, wherein each reactor-furnace pair comprises a furnace coupled to a reactor, wherein each reactor comprises a reforming catalyst;
a feed header coupled to the plurality of reactor-furnace pairs by a plurality of feed lines;
an effluent header coupled to the plurality of reactor-furnace pairs by a plurality of effluent lines; and
a plurality of valves disposed in the flow lines, the feed lines, and the effluent lines, wherein the plurality of valves are capable of being dynamically operated to create a serial flow path through the plurality of reactor-furnace pairs, and wherein the plurality of valves are further configured to route the serial flow path to bypass at least one reactor-furnace pair.
14. The system of claim 13, wherein the plurality of valves are further configured to reconnect the bypassed at least one reactor-furnace pair in a second serial flow path through the plurality of reactor-furnace pairs, wherein the second serial flow path is different than the serial flow path.
15. The system of claim 14, wherein the plurality of reactor-furnace pairs comprises at least three reactor-furnace pairs, wherein a first reactor-furnace pair of the plurality of reactor-furnace pairs is adjacent to a second reactor-furnace pair of the plurality of reactor-furnace pairs in the serial flow path, wherein the first reactor-furnace pair is not adjacent to the second reactor-furnace pair in the second serial flow path.
16. The system of claim 15, wherein the first reactor-furnace pair is upstream of the second reactor-furnace pair in the serial flow path, and wherein the first reactor-furnace pair is downstream of the second reactor-furnace pair in the second serial flow path.
17. The system of claim 16, wherein the reforming catalyst in the first reactor-furnace pair has a lower activity than an activity of the reforming catalyst in the second reactor-furnace pair when the plurality of reactor-furnace pairs are configured in the first serial flow path.
18. The system of claim 13, further comprising:
a supply header coupled to the plurality of reactor-furnace pairs by a plurality of supply lines;
a return header coupled to the plurality of reactor-furnace pair by a plurality of return lines;
a flow system coupled to the supply header and the return header for providing a fluid to at least one of the plurality of reactor-furnace pairs; and
a plurality of flow system valves disposed in the supply lines and the return lines, wherein the plurality of flow system valves are capable of being dynamically operated to couple one or more of the plurality of reactor-furnace pairs to the flow system.
19. The system of claim 13, wherein the reforming catalyst comprises a zeolite, and wherein the reforming catalyst is capable of converting at least a portion of a hydrocarbon stream to aromatic hydrocarbons in one or more of the plurality of reactors.
20. The system of claim 13, wherein the reforming catalyst comprises at least one Group VIII metal and a zeolitic support.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A compound of Formula (I)
wherein
R1 is selected from the group consisting of H, benzyl substituted with OCH3, optionally substituted (C1-C3)alkyl, pyrimidine substituted with NH2 and amino(C1-C3)alkyl;
R3 is selected from the group consisting of H, halogen, NH2, OH, COOH, \u2014C(O)\u2014NH\u2014CH2\u2014C(O)\u2014OCH3, \u2014NH\u2014CH2-phenyl, \u2014C(O)-pyridinyl, \u2014NH\u2014C(O)-cyclobutyl and \u2014NH\u2014C(O)-phenyl wherein phenyl is optionally substituted with either N(CH3)2 or OCH3; or
R3 is selected from the optionally substituted group consisting of (C1-C6)alkyl, benzobthienyl, 2,3-dihydrobenzofuranyl, indolyl, isoquinolinyl, morpholinyl, naphthyl, phenyl, piperazinyl, pyrazolyl, pyridinyl, pyrimidinyl, pyrrolyl, quinolinyl and thienyl;
wherein the substituent is selected from one or more CH3, NH2, Cl, F, dimethylamino, OH, CH2OH, \u2014C(O)NH2, COOH, CF3, isopropyl, OCF3, OCH3, \u2014O\u2014CH2-phenyl, CN, OCH2CH3, \u2014NH\u2014C(O)-cyclobutyl, \u2014NH\u2014C(O)-phenyl, NH\u2014C(O)\u2014CH3, NHC(O)CH3, N(CH3)2, S(O)2CH3 and C(O)NH-phenyl; or

R3 is \u2014C(O)\u2014NY100\u2014(C(Y100)2)x\u2014Ra wherein
x is 0, 1, 2 or 3;
Y100 is independently H or (C1-C3)alkyl; and
Ra is \u2014C(O)\u2014CH3 or is selected from the optionally substituted group (C1-C3)alkyl, amino, aminoalkyl, benzimidazolyl, benzobthienyl, benzotriazolyl, biphenyl, 1,3-dihydrobenzimidazolyl, 1,3-dihydrobenzimidazolyl-2-one, imidazolyl, indolyl, naphthyl, phenyl, pyrazolyl, pyridinyl, pyrimidinyl, tetrahydropyranyl and thiazolyl; or

R3 is A-B wherein A is connected to the indazole and
A is selected from the group consisting of \u2014C\u2261C, \u2014C\u2261C phenyl indazolyl, phenyl, pyridinyl and thienyl;
B is selected from the group consisting of benzyloxy, morpholinyl, phenyl, thienyl, t-butyl, \u2014NH\u2014C(O)-cyclobutyl and \u2014NH\u2014C(O)-phenyl;

R4 is H or NH2;
R5 is selected from the optionally substituted group consisting of benzimidazolyl, 3,4-dihydrobenzo1,4thiazinyl, furo3,2-cpyridine, indazolyl, indolyl, isoquinolinyl, pyrazolo3,4-dpyrimidine, pyrrolo2,3-bpyridinyl, pyrrolo2,3-cpyridinyl, pyrrolo2,3-dpyridinyl, pyrrolo3,2-dpyridine, pyrrolo2,3-dpyrimidinyl, quinolinyl, quinazolinyl, thieno2,3-cpyridinyl, thieno2,3-dpyrimidine, thieno3,2-cpyridine, 7-azaindolinyl and 7-azaindolyl;
R6 is H or R6 is selected from the optionally substituted group consisting of (C1)alkoxy, (C1-C3)alkyl, benzobthienyl, NH pyrimidinyl \u2014NH\u2014S(O)2-phenyl-NH-pyrimidinyl, \u2014NH\u2014C(O)-benzobthienyl, pyrrolo2,3-bpyrimidinyl and pyridinyl; and
R7 is selected from optionally substituted group consisting of benzofuranyl, benzothiazolyl, benzobthienyl, indolyl, isoquinolinyl, quinolinyl, quinoxalinyl, and thieno2,3-bpyridinyl; or
R7 is Y\u2014Z wherein Y is attached to the indazole; and
Y is benzobthienyl; and
Z is selected from the group consisting of phenyl, thienyl, CH2NHCH2CH2-morpholinyl and substituted piperazinyl.
2. The compound of claim 1 wherein
R1 is H or pyrimidinyl substituted with NH2;
R3 is selected from the group consisting of H, CH3, OH, Cl, benzobthienyl, 2,3-dihydrobenzofuranyl, indolyl, naphthyl, phenyl, pyrazolyl, pyridinyl, pyrimidinyl, pyrrolyl, quinolinyl, thienyl, \u2014NH\u2014C(O)\u2014 cyclobutyl and \u2014NH\u2014C(O)-phenyl; wherein
the indolyl is optionally substituted with CH3;
the naphthyl is optionally substituted with OCH3 or OH; and
the phenyl optionally substituted with one or more substituents selected from the group consisting of CH3, NH2, Cl, F, N(CH3)2, OH, CH2OH, C(O)NH2, COOH, CF3, OCF3, OCH3, CN, OCH2CH3, NHC(O)CH3, \u2014S(O)2CH3 and \u2014C(O)\u2014NH-pheny; or

R3 is \u2014C(O)\u2014NY100\u2014(C(Y100)2)x\u2014Ra wherein
x is 0 or 1;
Y100 is H;
Ra is selected from the optionally substituted group consisting of benzobthienyl, benzimidazolyl, 1,3-dihydrobenzimidazolyl-2-one, benzotriazolyl, biphenyl, 1,3-dihydrobenzimidazolyl, indolyl, naphthyl and phenyl; wherein
the naphthyl is substituted with OH or OCH3;
the phenyl is optionally substituted with one or more Cl, F, OH, CH2OH, CH2CH2OH, COOH, C(O)NH2, N(CH3)2 or methyl; or
R3 is A-B wherein
A is selected from the group consisting of \u2014C\u2261C, \u2014C\u2261C-phenyl, phenyl and thienyl; and
B is selected from the group consisting of benzyloxy, phenyl, thienyl, \u2014NH\u2014C(O)-cyclobutyl and \u2014NH\u2014C(O)-phenyl;

R4 is H;
R5 is selected from the group consisting of
E is selected from the group consisting of H, OH, CH3, \u2014CH2CH2NH2, CH2CH2CH2OH, CH2CH2OCH3, CH2CH2CH2NH2, CH2C(O)OH, CH2CH2C(O)OH, CH2CH2C(O)NH2, CH2CH2C(O)OCH3, CH2CH2CH2OCH3, NHCH2CH2CH3, CH2CH2C(O)NH(CH3), CH2CH2C(O)N(CH3)2, C(O)NHCH2CH2NH(CH3), NHCH2CH2OCH3, NHCH2CH2OH, NHCH2CH2N(CH3)2, isopropyl, CH2C(O)NH2, CH2CH(CH3)C(O)OH, CH2CH2CH2C(O)OH, CH2CH(CH3)C(O)OCH3, CH2CH2CH2CH2NH2, CH2CH2CH2C(O)NH2, N(CH3)2, morpholinylethyl, piperidinylethyl,
\u2003and 4-methylpiperazinylcyclohexyl;

R6 is selected from the group consisting of H, pyrrolo2,3-bpyrimidinyl and
\u2003and
R7 is selected from the optionally substituted group consisting of benzofuranyl, benzobthienyl, indolyl, pyrrolyl, quinolinyl, quinoxalinyl, and thieno2,3-bpyridinyl, wherein
the benzobthienyl is optionally substituted with OH, CH3, OCH3, N(CH3)2, OH, CH2\u2550CHNHCH3, CH2NH2, CH2CH2NH2 or CH2NHCH2CH2N(CH3)2; and
the indolyl is substituted with C(O)N(CH(CH3)2)2, CH2OH, CH2C(O)NH2, COOH, C(O)NH2, N(CH3)2 or S(O)2CH3;

R7 is Y\u2014Z wherein
Y is benzobthienyl; and
Z is selected from the optionally substituted group consisting of CH\u2550CHNHCH3, NHCH3, CH2NH2, CH2CH2NH2, CH2NHCH3, CH2NHCH2CH2N(CH3)2, N(CH3)2, CH2NHCH2CH2-morpholinyl, benzobthienyl, morpholinylmethyl, piperazinylmethylphenyl and thienyl.
3. The compound of claim 2 wherein
R1 is H or pyrimidinyl substituted with NH2;
R3 is selected from the group consisting of H, CH3, OH, Cl, benzobthienyl, 2,3-dihydrobenzofuranyl, indolyl, naphthyl, phenyl, pyrazolyl, pyridinyl, pyrimidinyl, pyrrolyl, quinolinyl, thienyl, \u2014NH\u2014C(O)\u2014cyclobutyl and \u2014NH\u2014C(O)-phenyl; wherein
the indolyl is optionally substituted with CH3;
the naphthyl is optionally substituted with OH; and
the phenyl optionally substituted with one or more substituents selected from the group consisting of OH, F, CH3, CF3, CN, \u2014C(O)NH2, NH2, NHC(O)CH3, OCH3, OCF3, OCH2CH3, N(CH3)2, \u2014C(O)\u2014NH-phenyl and \u2014S(O)2CH3; or

R3 is \u2014C(O)\u2014NY100\u2014(C(Y100)2)x\u2014Ra wherein
Y100 is H;
x is 0;
Ra is selected from the optionally substituted group consisting of benzimidazolyl, 1,3-dihydrobenzimidazolyl-2-one, benzotriazolyl, biphenyl, indolyl, naphthyl and phenyl; wherein
the naphthyl is substituted with OH or OCH3;
the phenyl is optionally substituted with one or more Cl, F, OH, CH2OH, CH2CH2OH, C(O)NH2, N(CH3)2 or methyl; or
R3 is A-B wherein
A is selected from the group consisting of phenyl and thienyl; and
B is selected from the group consisting of benzyloxy, phenyl, thienyl, \u2014NH\u2014C(O)-cyclobutyl and \u2014NH\u2014C(O)-phenyl;

R5 is selected from the group consisting of
\u2003wherein
E is selected from the group consisting of H, CH3, CH2C(O)OH, CH2CH2CH2OH, CH2CH2CH2NH2, CH2CH2C(O)OH, CH2CH2C(O)NH2, CH2CH2C(O)OCH3, CH2CH2CH2OCH3, NHCH2CH2CH3, CH2CH2C(O)NH(CH3), NHCH2CH2OCH3, NHCH2CH2OH, isopropyl, CH2C(O)NH2, CH2CH(CH3)C(O)OH, morpholinylethyl, piperidinylethyl, CH2CH2CH2C(O)OH, CH2CH(CH3)C(O)OCH3, CH2CH2NH2, CH2CH2CH2CH2NH2, CH2CH2CH2C(O)NH2, CH2CH2C(O)N(CH3)2, and N(CH3)2;

R6 is H or
\u2003and
R7 is selected from the optionally substituted group consisting of benzofuranyl, benzobthienyl, indolyl, quinolinyl, quinoxalinyl, and thieno2,3-bpyridinyl, wherein
the benzobthienyl is optionally substituted with OH, CH3, OCH3, N(CH3)2, CH2\u2550CHNHCH3, CH2NH2, CH2CH2NH2 or CH2NHCH2CH2N(CH3)2; and
the indolyl is substituted with methyl, CN, C(O)H, CH2CH2CH2NH2, CH2NHCH2CH\u2550CH2, C(O)CH3, C(O)OCH3, OCH3, C(O)N(CH(CH3)2)2, CH2OH, CH2C(O)NH2, C(O)NH2, CH2NHCH2CH2N(CH3)2 or piperidinylmethyl; or

R7 is Y\u2014Z wherein
Y is benzobthienyl; and
Z is selected from the optionally substituted group consisting of CH\u2550CHNHCH3, NHCH3, CH2NH2, CH2CH2NH2, CH2NHCH3, CH2NHCH2CH2N(CH3)2, N(CH3)2, CH2NHCH2CH2-morpholinyl, benzobthienyl, morpholinylmethyl and piperazinylmethyl; wherein
the piperazinyl is optionally substituted with methyl.
4. The compound of claim 3 wherein
R1 and R4 are H;
R3 is selected from the optionally substituted group consisting of H, OH, 2,3-dihydrobenzofuranyl, naphthyl, pyrazolyl and pyrrolyl; wherein
R3 is \u2014C(O)\u2014NY100\u2014(C(Y100)2)x\u2014Ra wherein
Y100 is H;
x is 0;
Ra is selected from the optionally substituted group consisting of naphthyl and phenyl; wherein
the naphthyl is optionally substituted with OH;
the phenyl is optionally substituted with OH; or
R3 is selected from the group consisting of \u2014NH\u2014C(O)-cyclobutyl and \u2014NH\u2014C(O)-phenyl;
R3 is A-B wherein
A is selected from the group consisting of phenyl and thienyl; and
B is selected from the group consisting of benzyloxy, phenyl and thienyl;

R5 is
\u2003wherein
E is selected from the group consisting of H, CH2C(O)NH2, CH2CH(CH3)C(O)OCH3, CH2CH2CH2OH, CH2CH2C(O)OCH3, CH2CH2CH2OCH3, CH2CH2NH2, CH2CH2CH2NH2, CH2CH2C(O)OH, CH2CH2C(O)NH2, CH2CH2CH2CH2NH2, CH2CH2CH2OCH3, CH2CH2CH2C(O)OH, CH2CH2CH2C(O)NH2, CH2CH(CH3)C(O)OH, CH2CH2C(O)NH(CH3), CH2CH2C(O)N(CH3)2, N(CH3)2, isopropyl, morpholinylethyl and piperidinylethyl;
R6 is H or
\u2003and
R7 is selected from the optionally substituted group consisting of benzofuranyl, benzobthienyl, indolyl, and quinolinyl, wherein
the benzobthienyl is optionally substituted with OH, CH3, OCH3, N(CH3)2, CH2\u2550CH2NHCH3, CH2NH2, CH2CH2NH2, CH2NHCH2CH2N(CH3)2, piperidinylmethyl or CH2NHCH2N(CH3)2; and
the indolyl is optionally substituted with methyl, CN, C(O)H, CH2CH2CH2NH2, CH2NHCH2CH\u2550CH2, C(O)CH3, C(O)OCH3, or OCH3; methyl, CN, C(O)H, CH2CH2CH2NH2, CH2NHCH2CH\u2550CH2, C(O)CH3, C(O)OCH3, or OCH3;
or

R7 is Y\u2014Z wherein
Y is benzobthienyl; and
Z is selected from the group consisting of CH\u2550CHNHCH3, NHCH3, CH2NH2, CH2CH2NH2, CH2NHCH3, CH2NHCH2CH2N(CH3)2, N(CH3)2, CH2NHCH2CH2-morpholinyl, benzobthienyl, morpholinylmethyl and piperazinylmethyl;
wherein the piperazinyl is optionally substituted with methyl.
5. The compound of claim 4 wherein
R1 and R4 are H;
R3 is selected from the group consisting of H, OH, 2,3-dihydrobenzofuranyl, pyrrolyl and optionally substituted napthyl; or
R3 is \u2014C(O)\u2014NY100\u2014(C(Y100)2)x\u2014Ra wherein
Y100 is H;
x is 0; and
Ra is phenyl substituted with OH;

R5 is
\u2003wherein
E is selected from the group consisting of H, CH2C(O)NH2, CH2CH2NH2, CH2CH2CH2NH2, CH2CH2CH2CH2NH2, CH2CH2CH2OCH3, CH2CH2CH2OH, CH2CH2C(O)OH, CH2CH2CH2C(O)OH, CH2CH2C(O)NH2, CH2CH2CH2C(O)NH2, CH2CH(CH3)C(O)OCH3 CH2CH(CH3)C(O)OH, CH2CH2C(O)OCH3, CH2CH2C(O)NH(CH3), CH2CH2C(O)N(CH3)2, N(CH3)2, isopropyl, morpholinylethyl and piperidinylethyl;

R6 is H or
\u2003and
R7 is selected from the optionally substituted group consisting of benzofuranyl, benzobthienyl, indolyl, and quinolinyl;
wherein
the benzobthienyl optionally substituted with OH, CH3, OCH3, CH2\u2550CH3\u2014NHCH3, CH2NH2, CH2CH2NH2, CH2NHCH2CH2N(CH3)2, N(CH3)2 or piperidinylmethyl; and
the indolyl is optionally substituted with methyl, CN, C(O)H, CH2CH2CH2NH2, CH2NHCH2CH\u2550CH2, C(O)CH3, C(O)OCH3, or OCH3;
or

R7 is Y\u2014Z wherein
Y is benzobthienyl; and
Z is selected from the group consisting of CH2NHCH2CH2-morpholinyl, morpholinylmethyl and piperazinylmethyl wherein the piperazinyl is optionally substituted with methyl.
6. The compound of claim 5 wherein
R1, R3, R4 and R6 are H;
R5 is
\u2003wherein
E is selected from the group consisting of H, \u2014CH2CH2NH2, CH2CH2CH2NH2, CH2CH2CH2OH, CH2CH2C(O)OH and CH2CH2C(O)NH2; and

R7 is selected from the group consisting of benzobthienyl, and indolyl, wherein
the benzobtheinyl is optionally substituted by piperidinylmethyl; and
the indolyl is optionally substituted by CN, methyl or C(O)H.
7. The compound of claim 6 wherein
R1, R3, R4 and R6 are H;
R5 is
\u2003wherein
E is selected from the group consisting of H, \u2014CH2CH2NH2, CH2CH2CH2NH2, CH2CH2CH2OH, CH2CH2C(O)OH and CH2CH2C(O)NH2; and

R7 is benzobthienyl or indolyl wherein
the benzobtheinyl is optionally substituted by piperidinylmethyl;
the indolyl is optionally substituted by CN, methyl or C(O)H.
8. The compound of claim 7 wherein R1, R3, R4 and R6 are H;
R5 is
\u2003wherein
E is selected from the group consisting of \u2014CH2CH2NH2, CH2CH2CH2NH2, CH2CH2CH2OH, CH2CH2C(O)OH and CH2CH2C(O)NH2; and

R7 is benzobthienyl.

1-10. (canceled)
11. A method for making a lithographic printing plate comprising the steps of:
providing a heat-sensitive lithographic printing plate precursor including on a heat sensitive coating on a support having a hydrophilic surface or which is provided with a hydrophilic layer, the heat-sensitive coating including a first layer having a first polymer which is water-insoluble and alkali-soluble, and on the first layer, a second layer having a second polymer which is water-insoluble and alkali-soluble, and an infrared absorbing dye present in at least one of the first and second layer;
image-wise exposing the precursor with IR-radiation or heat wherein the second layer exhibits an increased solubility in an aqueous alkaline developing solution; and
developing the image-wise exposed precursor with an aqueous alkaline developing solution;
the solution including:
an alkaline silicate or metasilicate in a concentration in the range of 1 to 14% by weight;
a mono alkali metal or ammonium salt of an organic carboxylic acid, having 4 to 12 carbon atoms and substituted with 3 to 11 hydroxyl groups;
an alkali metal or ammonium salt of an aliphatic carboxylic acid, selected from octanoic acid, nonanoic acid, decanoic acid, or undecanoic acid, in a concentration in the range of 0.01 to 2.0 moll; and
a blockcopolymer including a chain segment of ethyleneoxide and propyleneoxide, substituted on an ethylenediamine or on a diethylenetriamine group, in a concentration in the range of 0.05 to 5% by weight; wherein
the ratio of the concentration in weight % of the salt of the aliphatic carboxylic acid to the concentration in weight % of the blockcopolymer is between 1 and 20.
12. A method according to claim 11, wherein the ratio of the concentration in weight % of the salt of the aliphatic carboxylic acid to the concentration in weight % of the blockcopolymer is between 2 and 15.
13. A method according to claim 11, wherein the ratio of the concentration in weight % of the salt of the aliphatic carboxylic acid to the concentration in weight % of the blockcopolymer is between 3 and 10.
14. A method according to claim 11, wherein the salt of the aliphatic acid is present in the alkaline developing solution in a concentration ranging between 0.03 and 1.0 moll.
15. A method according to claim 11, wherein the salt of the aliphatic carboxylic acid is octanoic acid or nonanoic acid.
16. A method according to claim 11, wherein the mono alkali metal or ammonium salt of an organic carboxylic acid, having 4 to 12 carbon atoms and substituted with 3 to 11 hydroxyl groups, is a sugar including a carboxylic acid group.
17. A method according to claim 16, wherein the sugar including the carboxylic acid group is gluconic acid.
18. A method according to claim 11, wherein the first polymer includes sulphonamide groups in the side chain of the polymer backbone.
19. A method according to claim 11, wherein the second polymer is a phenolic resin.
20. A method according to claim 11, wherein the precursor further includes, on top of the second layer, a top layer including a polymer or surfactant having siloxane or perfluoroalkyl units.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor structure comprising:
a substrate with a {100} crystal surface plane comprising a plurality of adjacent structured regions at a top side of the substrate, wherein the plurality of adjacent structured regions comprise adjacent substrate surfaces with {111} crystal planes;
a III-V semiconductor material layer above the top side of the substrate with a semiconductor device region, which comprises at least one semiconductor device structure, wherein the semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate; and
a region surrounding the plurality of adjacent structured regions, wherein the region comprises a plurality of adjacent structured regions having adjacent substrate surfaces with {111} crystal planes and substrate surfaces with crystal planes different from {111} crystal planes.
2. The semiconductor structure according to claim 1, wherein the plurality of adjacent structured regions comprise exclusively adjacent substrate surfaces with {111} crystal planes.
3. The semiconductor structure according to claim 1, wherein the adjacent substrate surfaces with {111} crystal planes form trench structures.
4. The semiconductor structure according to claim 1, further comprising a buffer layer, arranged between the substrate and the III-V semiconductor material layer.
5. The semiconductor structure according to claim 4, wherein the buffer layer and the substrate comprise less crystal lattice mismatch than the III-V semiconductor material layer and the substrate.
6. The semiconductor structure according to claim 1, wherein a material of the substrate and a material of the III-V semiconductor material layer comprise a coincidence site lattice.
7. The semiconductor structure according to claim 1, wherein the III-V semiconductor material layer comprises gallium nitride (GaN).
8. The semiconductor structure according to claim 1, wherein the at least one semiconductor device structure is a field-effect transistor (FET) structure, a high electron mobility transistor (HEMT) structure, a diode structure or an electric circuit.
9. The semiconductor structure according to claim 1, wherein a first region of the III-V semiconductor material layer, which overlaps the plurality of adjacent structured regions, comprises a higher crystal lattice tension or crystal lattice compression strength than a second region of the III-V semiconductor material layer, which overlaps the region.
10. The semiconductor structure according to claim 1, wherein the III-V semiconductor material layer further comprises alignment marks.
11. The semiconductor structure according to claim 1, wherein the substrate further comprises lattice stress compensation regions and the III-V semiconductor material layer comprises a thickness between 1 nm and 50 \u03bcm.
12. A method of forming the semiconductor structure of claim 1, the method comprising:
forming the plurality of adjacent structured regions at the top side of the substrate;
forming the III-V semiconductor material layer above the top side of the substrate; and
forming the at least one semiconductor device structure in the semiconductor device region of the III-V semiconductor material layer.
13. The method according to claim 12, wherein forming of the plurality of adjacent structured regions comprises depositing a masking layer at the top side of the substrate, removing locally the masking layer from the top side of the substrate, so that the top side of the substrate with the {100} crystal surface plane is locally exposed and etching the locally exposed top side of the substrate, so that the plurality of adjacent structured regions which comprise the adjacent substrate surfaces with {111} crystal planes are formed.
14. The method according to claim 12, further comprising arranging a buffer layer between the top side of the substrate and the III-V semiconductor material layer.
15. The method according to claim 12, wherein the forming of the III-V semiconductor material layer comprises performing an epitaxial growth of the III-V semiconductor material layer.
16. The method according to claim 12, wherein forming the plurality of adjacent structured regions, further comprises forming the region surrounding the plurality of adjacent structured regions.
17. The method according to claim 16, wherein forming the region is performed, so that the region comprises substrate surfaces with crystal planes different from {111} crystal planes.
18. The method according to claim 12, further comprising removing the substrate below the semiconductor device structure.
19. The method according to claim 12, wherein forming the plurality of adjacent structured regions further comprises forming a lattice stress compensation region and wherein the III-V semiconductor material layer is formed so that the III-V semiconductor material layer comprises a thickness between 1 nm and 50 \u03bcm.
20. A semiconductor structure comprising:
a substrate with a {100} crystal surface plane comprising a plurality of adjacent structured regions at a top side of the substrate, wherein the plurality of adjacent structured regions comprise adjacent substrate surfaces with {111} crystal planes;
a III-V semiconductor material layer, above the top side of the substrate with a semiconductor device region, wherein the semiconductor device region is arranged above the plurality of adjacent structured regions,
a region surrounding the plurality of adjacent structured regions, wherein the region comprises a plurality of adjacent structured regions having adjacent substrate surfaces with {111} crystal planes and substrate surfaces with crystal planes different from {111} crystal planes,
a buffer layer between the substrate and the III-V semiconductor material layer; and
a field-effect transistor (FET) structure, a diode structure, a high-electron-mobility transistor (HEMT) structure or an electric circuit arranged in the semiconductor device region.