What is claimed is:
1. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate by exposure;
a pellicle positioned to cover at least one of a patterned surface of said mask and a surface of said mask opposite to the patterned surface; and
a titanium oxide film formed on the surface of said pellicle.
2. A mask structure according to claim 1, wherein said mask is a reflective-type mask.
3. A mask structure according to claim 1, wherein said mask is a transmission mask.
4. A mask structure according to claim 1, wherein said titanium oxide film is formed on a section of the surface of said pellicle other than a section where light is radiated when the substrate is exposed.
5. A mask structure according to claim 1, wherein said mask structure is used for exposure using X-rays.
6. An exposure method comprising the steps of:
providing a mask structure having a mask with a desired pattern, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle; and
transferring the pattern on the mask onto a material to be patterned by exposure.
7. An exposure method according to claim 6, further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
8. An exposure method according to claim 6, further comprising performing the transfer by exposure with X-rays.
9. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask, and a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, said exposure apparatus comprising:
mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the surface of the pellicle; and
means for holding the material to be patterned.
10. An exposure apparatus according to claim 9, further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
11. An exposure apparatus according to claim 9, further comprising:
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
12. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle.
13. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure having a mask with a desired pattern, a pellicle positioned to cover at least one of a patterned surface of the mask and a surface of the mask opposite to the patterned surface, and a titanium oxide film formed on the surface of the pellicle;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
14. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate by exposure, said mask having an exposure area to be irradiated with an energy beam; and
a titanium oxide film formed on the surface of said mask, said titanium oxide film being formed outside the exposure area.
15. A mask structure according to claim 14, wherein the energy beam includes X-rays.
16. An exposure method comprising the steps of:
providing a mask structure including a mask having a desired pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area; and
transferring by exposure the pattern on the mask onto a material to be patterned.
17. An exposure method according to claim 16, further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
18. An exposure method according to claim 16, further comprising performing the transfer by exposure with X-rays.
19. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask having the pattern and an exposure area to be irradiated with an energy beam, said exposure apparatus comprising:
mask structure holding means for holding the mask structure wherein the mask structure has a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area; and
means for holding the material to be patterned.
20. An exposure apparatus according to claim 19, further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
21. An exposure apparatus according to claim 19, further comprising:
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
22. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask having the pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area.
23. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure including a mask having a pattern and an exposure area to be irradiated with an energy beam, and a titanium oxide film formed on the surface of the mask, the titanium oxide film being formed outside the exposure area;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
24. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate by exposure, said mask comprising a film and an absorber pattern formed on said film to be irradiated with an energy beam; and
a titanium oxide film formed on said mask, said titanium oxide film being formed on the surface of said film and on the surface of said absorber pattern, which surface excludes the sides of said absorber pattern.
25. A mask structure according to claim 24, wherein the energy beam includes X-rays.
26. An exposure method comprising the steps of:
providing a mask structure including a mask with a desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern; and
transferring by exposure the pattern on the mask onto a material to be patterned.
27. An exposure method according to claim 26, further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
28. An exposure method according to claim 26, further comprising performing the transfer by exposure with X-rays.
29. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask with the pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, said exposure apparatus comprising:
mask structure holding means for holding the mask structure, wherein the mask structure has a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern; and
means for holding the material to be patterned.
30. An exposure apparatus according to claim 29, further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
31. An exposure apparatus according to claim 29, further comprising:
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
32. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, the mask structure including the mask with the desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern.
33. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure including a mask with a desired pattern that has a film and an absorber pattern formed on the film, to be irradiated with an energy beam, and a titanium oxide film formed on the mask, the titanium oxide film being formed on the surface of the film and on the surface of the absorber pattern, which surface excludes the sides of the absorber pattern;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
34. A mask structure comprising:
a mask for use in transferring a desired pattern onto a substrate, said mask including an exposure area to be irradiated with an energy beam, and an absorber pattern for the energy beam formed on the exposure area; and
a titanium oxide film formed on said mask, said titanium oxide film being formed outside the exposure area and only on the upper surface of said absorber pattern.
35. A mask structure according to claim 34, wherein the energy beam includes X-rays.
36. An exposure method comprising the steps of:
providing a mask structure including a mask having a pattern, the mask including an exposure area to be irradiated with an energy beam, and an absorber pattern for the energy beam being formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern; and
transferring by exposure the pattern on the mask onto a material to be patterned.
37. An exposure method according to claim 36, further comprising performing the transfer by exposure by using a chemically amplified resist on the material to be patterned.
38. An exposure method according to claim 36, further comprising performing the transfer by exposure with X-rays.
39. An exposure apparatus for transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask having a pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern, said exposure apparatus comprising:
mask structure holding means for holding the mask structure; and
means for holding a material to be patterned.
40. An exposure apparatus according to claim 39, further comprising an auxiliary light source for radiating auxiliary light to the mask structure without affecting the material to be patterned.
41. An exposure apparatus according to claim 39, further comprising:
a mask cassette for storing the mask structure when the material to be patterned is not subjected to exposure; and
an auxiliary light source for radiating auxiliary light to the mask structure stored in the mask cassette.
42. A semiconductor device manufactured by transferring by exposure a pattern on a mask in a mask structure onto a material to be patterned and processing the patterned material, wherein the mask structure includes the mask having the pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern.
43. A semiconductor device manufacturing method comprising the steps of:
providing a mask structure including a mask having a pattern, an exposure area to be irradiated with an energy beam and an absorber pattern for the energy beam formed on the exposure area, and a titanium oxide film formed on the mask, the titanium oxide film being formed outside the exposure area and only on the upper surface of the absorber pattern;
transferring by exposure the pattern on the mask onto a material to be patterned; and
processing the patterned material.
44. An exposure apparatus for transferring by exposure a desired pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask covered with a pellicle, and a titanium oxide film formed thereon, said exposure apparatus comprising:
a first chamber in which the pattern is transferred onto the material to be patterned through exposure by using the mask structure; and
a second chamber including an auxiliary light source for irradiating the titanium oxide film to cause the titanium oxide film to act as a photocatalyst.
45. An exposure apparatus according to claim 44, wherein said second chamber is used to store the mask structure.
46. An exposure apparatus for transferring by exposure a desired pattern on a mask in a mask structure onto a material to be patterned, the mask structure including the mask, which is not covered with a pellicle, and a titanium oxide film formed thereon, said exposure apparatus comprising:
a first chamber in which the pattern is transferred onto the material to be patterned through exposure by using the mask structure; and
a second chamber including an auxiliary light source for irradiating the titanium oxide film to cause the titanium oxide film to act as a photocatalyst.
47. An exposure apparatus according to claim 46, wherein said second chamber is used to store the mask structure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electronic device, comprising:
a display module integrated with a first touch sensor, wherein the first touch sensor generates a first sensing signal in response to a first driving signal;
a second touch sensor, generating a second sensing signal in response to a second driving signal;
a drive circuitry, coupled to the display module and the first touch sensor, the drive circuitry generating the first driving signal to drive the first touch sensor when instructed by a sense circuitry and driving the display module for displaying an image; and
the sense circuitry, coupled to the first and the second touch sensors, the sense circuitry generating the second driving signal to drive the second touch sensor,
the sense circuitry receiving and analyzing the first sensing signal to sense a touch on the first touch sensor and
the sense circuitry receiving and analyzing the second sensing signal to sense a touch on the second touch sensor;
wherein the drive circuitry to provide the first driving signal to the first touch sensor according to a first frequency, and the sense circuitry provides the second driving signal to the second touch sensor according to a second frequency, the first frequency and the second frequency are different.
2. The electronic device of claim 1, wherein the sense circuitry provides the first driving signal to the first touch sensor according to a first timing and provides the second driving signal to the second touch sensor according to a second timing, the first timing and the second timing are different.
3. The electronic device of claim 1, wherein the sense circuitry simultaneously sends the first and the second driving signals through a same output terminal to the first and the second touch sensors, respectively.
4. The electronic device of claim 1, wherein the sense circuitry comprises:
a first receiver coupled to the first touch sensor, receiving the first sensing signal;
a second receiver coupled to the second touch sensor, receiving the second sensing signal; and
a transmitter coupled to the first and the second touch sensors and the first and the second receivers, sending the first driving signal to the first touch sensor and sending a control signal to trigger the first receiver to receive the first sensing signal, sending the second driving signal to the second touch sensor and sending the control signal to trigger the second receiver to receive the second sensing signal.
5. The electronic device of claim 1, wherein the sense circuitry instructs the drive circuitry to provide the first driving signal to the first touch sensor according to a first timing, the sense circuitry provides the second driving signal to the second touch sensor according to a second timing, the first timing and the second timing are different.
6. A touch-sensing method for an electronic device having
a display module integrated with a first touch sensor, a second touch sensor, a drive circuitry, coupled to the display module and the first touch sensor, and
a sense circuitry coupled to the first and second touch sensor, comprising
the sense circuitry configured to:
instruct a first driving signal to be provided to the first touch sensor by the drive circuitry according to a first frequency;
provide a second driving signal to drive the second touch sensor according to a second frequency;
receive and analyze a first sensing signal generated by the first touch sensor in response to the first driving signal sensor;
receive and analyze a second sensing signal generated by the second touch sensor in response to the second driving signal sensor,
wherein the first frequency and the second frequency are different.
7. The touch-sensing method of claim 6, further comprising:
driving the display module to display an image by a drive circuitry.
8. The touch-sensing method of claim 7, further comprising:
instructing the drive circuitry to provide the first driving signal to the first touch sensor according to a first timing; and
providing the second driving signal to the second touch sensor according to a second timing, wherein the first timing and the second timing are different.
9. The touch-sensing method of claim 6, furthering comprising:
providing the first driving signal to the first touch sensor according to a first timing; and
providing the second driving signal to the second touch sensor according to a second timing, wherein the first timing and the second timing are different.
10. The electronic device of claim 6, wherein the sense circuitry simultaneously sends the first and the second driving signals through a same output terminal to the first and the second touch sensors, respectively.
11. The touch-sensing method of claim 6, further comprising:
sending the first driving signal to the first touch sensor and sending a control signal to trigger the receiving of the first sensing signal; and
sending the second driving signal to the second touch sensor and sending the control signal to trigger the receiving of the second sensing signal.