Author: claimsbot

1. A composition comprising a class of sulfonated triorganophosphine compounds represented by the following formula:
wherein R1 and R2 each individually represent a monovalent hydrocarbyl or substituted hydrocarbyl radical selected from alkyl, aralkyl, and alicyclic radicals; wherein R3 represents a divalent or polyvalent alkylene or alicyclic radical which is bonded to the phosphorus atom and to one or more sulfonate substituents via an alkylether link, and further wherein R3 does not contain any aryl moieties; n is an integer representing a number of methylene groups in the alkylether link ranging from 1 to about 5; M represents a monovalent cation; and m is an integer ranging from 1 to 3 representing a total number of sulfonated alkylether substituents bonded to R3; and wherein in each of R1, R2, and R3 the carbon atom attached to the phosphorus atom or a carbon atom directly bonded to the carbon atom attached to the phosphorus atom is additionally bonded to 2 other carbon atoms and 1 hydrogen atom.
2. The composition of claim 1 wherein R1 and R2 are each individually selected from alkyl radicals containing from 3 to 12 carbon atoms, aralkyl radicals containing from 6 to 12 carbon atoms, and alicyclic radicals containing from 3 to 10 carbon atoms.
3. The composition of claim 1 wherein R1 and R2 are each individually selected from iso-propyl, iso-butyl, sec-butyl, 2,2-dimethylpropyl, 2-methylbutyl, 1,1-dimethylpropyl, 2-ethylhexyl, benzyl, 2-methylbenzyl, 2,6-dimethylbenzyl, 1-phenylethyl, phenylcyclohexyl, 1,2,3,4-tetrahydronaphthyl, phenylcyclopentyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, ethylcyclohexyl, norbornyl, adamantyl, and dicyclopentyl.
4. The composition of claim 1 wherein R1 and R2 are substituted with one or more substituents selected from cyano, fluoro, trifluoromethyl, trialkylsilyl, alkoxy, carboalkoxy (ester), dialkylamino, and dialkylamido.
5. The composition of claim 1 wherein R3 is selected from divalent alkylene radicals having greater than 3 and less than 10 carbon atoms, and is optionally substituted with one or more substituents selected from fluoride, alkoxy, cyano, andor alkyl groups.
6. A complex catalyst or complex catalyst precursor composition comprising a Group 8-10 transition metal bonded to at least one ligand represented by the composition of claim 1, the transition metal optionally being further bonded to carbon monoxide, hydrogen, or both carbon monoxide and hydrogen.
7. The complex catalyst of claim 6 wherein the transition metal is selected from ruthenium, rhodium, cobalt, and iridium.
8. The composition of claim 1 wherein \u2014ORb3 is selected from the following species:
9. A hydroformylation process comprising contacting one or more olefinically-unsaturated compounds with carbon monoxide and hydrogen in the presence of a transition metal-ligand complex catalyst, and optionally free ligand, wherein the ligand is represented by the composition of claim 1, the contacting being conducted under process conditions sufficient to prepare one or more corresponding aldehyde products.
10. The process of claim 9 wherein the olefin is selected from olefinically-unsaturated aliphatic hydrocarbons having from 10 to 50 carbon atoms.
11. The process of claim 9 wherein the olefin is selected from the group consisting of alpha olefins, internal olefins, alkyl alkenoates, alkenyl alkanoates, alkenyl alkyl ethers, alkenols, olefinically-unsaturated fatty acids, and olefinically-unsaturated fatty acid esters.
12. The process of claim 9 wherein the Group 8-10 transition metal is present in a concentration greater than 0 parts per million (ppm) and less than 1,000 ppm by weight, calculated as free metal.
13. The process of claim 9 wherein temperature is greater than 30\xb0 C. and less than 150\xb0 C.
14. The process of claim 9 wherein the total gas pressure of hydrogen, carbon monoxide, and olefinic unsaturated reactant in the hydroformylation process ranges from greater than 1 psia (7 kPa) to less than 10,000 psia (68,948 kPa).
15. The process of claim 9 wherein partial pressure of carbon monoxide is greater than 1 psia (7 kPa) and less than 1000 psia (6,8948 kPa), and wherein partial pressure of hydrogen is greater than 5 psia (35 psia) and less than 1000 psia (6,8948 kPa).
16. The process of claim 9 wherein a molar ratio H2CO of gaseous hydrogen to carbon monoxide is greater than 110 and less than 1001.
17. The process of claim 9 wherein the transition metal is selected from ruthenium, rhodium, cobalt, and iridium.
18. A complex catalyst solution or complex catalyst precursor solution comprising a solvent, a complex catalyst or catalyst precursor composition comprising a Group 8-10 transition metal bonded to at least one ligand, the solution optionally further comprising free ligand; wherein the bonded and free ligands are represented by the composition of claims 1 to 5 and 8; and wherein optionally the Group 8-10 transition metal is bonded to carbon monoxide, hydrogen, or both carbon monoxide and hydrogen.
19. The composition of claim 1 wherein the sulfonated triorganophosphine compounds are selected from the group consisting of compounds of the following formula:

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An ambulatory patient support mechanism adapted to be connected to an overhead track that is secured to a ceiling vertically above and parallel with a given walk path, comprising:
a rolling carriage structure engaging and movable along said overhead track;
a frame structure having opposed end portions;
a rotating mechanism having an upper end secured to the carriage and a lower end secured to one of the opposed end portions of said frame structure;
a telescoping column oriented in a substantially vertical direction and having a lower end portion and an upper end portion and the upper end portion of the telescoping column being attached to the other opposed end portion of the frame structure; and
a U-shaped support frame extends in a substantially horizontal direction from the telescoping column and being attached to the lower end portion of said telescoping column.
2. The ambulatory patient support mechanism of claim 1 wherein the lower end of the rotating mechanism is rotatable relative to the upper end thereof about a vertical axis defined through the center of the rotating mechanism and the opposed end portions of the frame structure are oriented in a substantially horizontal direction and one of the opposed end portions rotates about the vertical axis of the rotating mechanism.
3. The ambulatory patient support mechanism of claim 2 wherein said telescoping column includes:
an upper column member secured at its top end to the other one of the opposed end portions of the frame structure; and
a lower column member telescopically received in the bottom end of the first member and extending vertically downward to terminate at its bottom end at the U-shaped support frame.
4. The ambulatory patient support mechanism of claim 1, wherein said U-shaped support frame includes:
a hollow elongated rail;
a pivoting mechanism attaching said telescoping column to the elongated rail;
a pair of underarm support assemblies slideable on the elongated rail; and
a patient back support affixed to the front side of the pivoting mechanism.
5. The ambulatory patient support mechanism of claim 4, wherein said hollow elongated rail includes equal lengths of the elongated rail on each side of said pivoting mechanism with weldments at contiguous locations of said pivoting mechanism and the elongated rail.
6. The ambulatory patient support mechanism of claim 4, wherein the pair of underarm support assemblies includes:
an arm support rail;
a first pinning mechanism for securing the arm support rail to the elongated rail;
a padded slidable arm restraint for positioning and securing patient’s upper arm;
a belting and buckle device for securing patients arm to the arm restraint;
a second pinning mechanism for securing the arm restraint to the arm rail;
a handgrip means for stabilizing the patient when walking; and
a pivoting arm means for rotation and positioning of the handgrip.
7. The ambulatory patient support mechanism of claim 1 wherein said frame structure includes:
an air cylinder having a cylinder housing secured to the telescoping column and a cylinder sliding rod secured to the frame structure adapted to provide means for lifting the column during storage;
a protective bumper secured to the frame structure; and
a rotation stop mounted on the frame structure and operative to limit the degree of rotation of the rotating mechanism.
8. The ambulatory patient support mechanism of claim 1 wherein the telescoping column is selectively pivotably connected to the frame structure.
9. The ambulatory patient support mechanism of claim 1 wherein the U-shaped support frame is selectively pivotably connected to the telescoping column.
10. A method for storing an ambulatory patient support mechanism that includes a rolling carriage structure adapted to engage and move along an overhead track secured to a ceiling above and parallel with a given walk path; a rotating mechanism having a vertical axis and being secured to the carriage and to a frame structure; a telescoping column having a first pinning mechanism for adjusting the telescoping thereof and being pivotably connected at one end to the frame structure and secured from pivoting therewith by a second pinning mechanism; and a U-shaped support frame perpendicularly connected to the other end of the telescoping column by a pivoting mechanism and secured from pivoting with the telescoping column by a third pinning mechanism; and an underarm support assembly secured to the U-shaped support frame, comprising the steps of:
operating said third pinning mechanism on said pivoting mechanism;
pivoting said underarm support assembly upwardly, in a direction at which the U-shaped member is parallel with said telescoping column;
releasing said third pinning mechanism into one of the plurality of holes on said pivoting mechanism;
operating said first pinning mechanism on said telescoping column;
sliding said lower column member into said upper column member the maximum distance of telescopic travel allowed;
releasing said first pinning mechanism into one of the plurality of holes in said telescoping column;
grasping said telescoping column and pivoting it toward the ceiling in a direction towards the vertical axis defined through the center of said rotating mechanism; and
stopping rotational movement when said telescoping column rests against the protective bumper on said frame structure.
11. A method of unfolding the ambulatory patient support mechanism of claim 10 for patient usage, comprising the steps of:
reversing steps used in claim 8 for folding the ambulatory patient support mechanism.

1. A halide phosphor powder for a warm-white light emitting diode, the halide phosphor powder comprising:
a low-color-temperature phosphor powder of halide nitride based on garnet of rare earth oxides and having cerium as an activating agent, chloride (Cl\u22121) and nitrogen ion (N\u22123) are added to a composition of the phosphor powder and a stoichiometric relationship of the composition is (\u03a3Ln+3)3Al2(Al(O1-2pClpNp)43, wherein \u03a3Ln=at least one element selected from a group consisting of Y, Gd, Tb, Lu, Dy, Pr, and Ce, the chemical parameter in the stoichiometric relationship is 0.001\u2266p\u22660.2;
wherein, in a composition of a cation lattice, rare earth ions of the low-color-temperature phosphor powder are selected from a group consisting of 0.001\u2266(Y\u03a3Ln)\u22660.5, 0.5\u2266(Gd\u03a3Ln)\u22660.95, 0\u2266(Tb\u03a3Ln)\u22660.1, 0\u2266(Lu\u03a3Ln)\u22660.05, 0\u2266(Dy\u03a3Ln)\u22660.05, 0.0001\u2266(Pr\u03a3Ln)\u22660.01 and 0.01\u2266(Ce\u03a3Ln)\u22660.1.
2. The halide phosphor powder according to claim 1, wherein a principal lattice parameter a of the halide phosphor powder is a\u226712.01 and increases with the rise of the chemical index \u201cp\u201d in the formula.
3. The halide phosphor powder according to claim 1, wherein a maximal radiation wavelength (\u03bb) in the spectrum of the halide phosphor powder amounts to 580\xb13 nm and shifts to a longer wavelength with the rise of the chemical index \u201cp\u201d in the formula.
4. The halide phosphor powder according to claim 1, wherein a spectral half width is enlarged to \u03bb0.5=126+6 nm when the chemical index \u201cp\u201d in the halide phosphor powder matrix increases.
5. The halide phosphor powder according to claim 1, wherein a chromaticity coordinate is enlarged to \u03a3(x+y)>0.88 when the chemical index \u201cp\u201d in the halide phosphor powder matrix increases.
6. The halide phosphor powder according to claim 1, wherein a quantum output is accumulated from \u03b6=0.92 to \u03b6=0.96 when the chemical index \u201cp\u201d in the halide phosphor powder matrix increases.
7. The halide phosphor powder according to claim 1, wherein particles of the halide phosphor powder are located on a prismatic face of an InGaN-base semiconductor heterostructure and a median particle diameter of the phosphor powder is d50=4.0 \u03bcm or d90=16 \u03bcm.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

We claim:

1. A method for fabricating semiconductor components having an electrically conductive layer configured on a semiconductor substrate, which comprises:
applying a silicon mask layer to a conductive layer;
applying an etching mask to the conductive layer for patterning the silicon mask layer;
selectively etching the silicon mask layer using the etching mask; and
patterning the conductive layer in an etching process using the selectively etched mask layer as a hard mask.
2. The method according to claim 1, which comprises:
leaving the silicon mask layer on the conductive layer after the conductive layer has been patterned; and
using the silicon mask layer as an adhesion promoting layer between the conductive layer and a further layer that is deposited.
3. The method according to claim 1, which comprises adapting a thickness of the silicon mask layer to reduce reflections during photolithographic patterning of its etching mask.
4. The method according to claim 1, which comprises using the silicon layer as an etching stop for protecting the conductive layer.
5. The method according to claim 1, wherein the silicon layer is a layer selected from the group consisting of an amorphous layer and a polycrystalline layer.
6. The method according to claim 1, which comprises doping the silicon layer.
7. The method according to claim 1, which comprises using the silicon layer as a hard mask while selectively etching a layer sequence which includes the conductive layer and a dielectric.
8. The method according to claim 1, which comprises using a metal layer as the conductive layer.
9. The method according to claim 8, wherein the metal layer includes a metal selected from the group consisting of platinum, iridium, palladium, and ruthenium.
10. The method according to claim 1, wherein the conductive layer is a layer selected from the group consisting of iridium oxide and ruthenium oxide.
11. A semiconductor component comprising:
a semiconductor substrate;
a conductive layer configured on said semiconductor substrate;
a mask layer covering said conductive layer, said mask layer being a silicon layer; and
a further layer configured above said conductive layer and connected to said conductive layer with said mask layer interposed therebetween, said further layer having a contact hole therethrough for making contact with said conductive layer, said contact hole extending at least to said mask layer;
said conductive layer being a layer selected from the group consisting of platinum, iridium, palladium, ruthenium, an alloy of at least one of the abovementioned metals, iridium oxide, and ruthenium oxide.