Author: claimsbot

1. A power supply apparatus for a shaping machine, comprising
an intermediate circuit which can be connected to at least one drive of the shaping machine, a power supply mains and a power storage device,
a measuring device for measuring an electric voltage or an electric current at the intermediate circuit, and
a closed-loop regulating device by means of which a power transfer between the power supply mains and the intermediate circuit can be regulated in dependence on the measured voltage or the measured current,
wherein the closed-loop regulating device is adapted to increase in magnitude a mains power furnished by the power supply mains to the intermediate circuit if the measured voltage or the measured current leaves a first range and to reduce in magnitude the mains power if the measured voltage or the measured current passes into a second range, wherein the second range is smaller than the first range and is completely contained in the first range.
2. A power supply apparatus according to claim 1, wherein the closed-loop regulating device is adapted to increase a mains power furnished by the power supply mains to the intermediate circuit if the measured voltage or the measured current falls below a lower limit value and to reduce the mains power if the measured voltage or the measured current exceeds a lower threshold value, wherein the lower threshold value is greater than the lower limit value.
3. A power supply apparatus according to claim 1, wherein the closed-loop regulating device is adapted to increase a regenerative power furnished by the intermediate circuit to the power supply mains if the measured voltage or the measured current exceeds an upper limit value and to reduce the regenerative power if the measured voltage or the measured current falls below an upper threshold value, wherein the upper limit value is greater than the upper threshold value.
4. A power supply apparatus according to claim 1, wherein the intermediate circuit has an intermediate circuit capacitor preferably connected in parallel.
5. A power supply apparatus according to claim 1, wherein the measuring device is in the form of a voltage measuring device and the measured voltage or the measured current is an intermediate circuit voltage at the intermediate circuit, wherein the intermediate circuit voltage is preferably an electric voltage at the intermediate circuit capacitor.
6. A power supply apparatus according to claim 1, wherein the closed-loop regulating device is adapted to increase the mains power in magnitude to a maximum mains power if the measured voltage or the measured current leaves the first range.
7. A power supply apparatus according to claim 1, wherein the closed-loop regulating device is adapted to limit the mains power in magnitude to a fixed multiple\u2014preferably 1.1 times\u2014of a nominal power of the power supply mains if the measured voltage or the measured current passes into the second range.
8. A power supply apparatus according to claim 1, wherein there is provided a mains connection module which is connected to the intermediate circuit and by way of which electric power can be transferred between the power supply mains and the intermediate circuit.
9. A power supply apparatus according to claim 8, wherein the mains connection module has a rectifier connected to the intermediate circuit for rectification of an AC voltage supplied by the power supply mains.
10. A power supply apparatus according to claim 8, wherein the mains connection module has an inverter connected to the intermediate circuit for providing an AC voltage for the power recovery of electric power back to the power supply mains.
11. A shaping machine having a power supply apparatus according to claim 1.
12. A shaping machine according to claim 11, wherein the intermediate circuit is connected to the at least one drive, in particular a closing drive and an injection drive, of the shaping machine or to a power storage device.
13. A shaping machine according to claim 12, wherein the power storage device has at least one storage capacitor for the storage of electric power.
14. A shaping machine according to claim 13 comprising a power supply apparatus according to claim 4, wherein a capacitance of the at least one storage capacitor is greater\u2014preferably by a factor of 10 to 30\u2014than a capacitance of the intermediate circuit capacitor.
15. A shaping machine according to claim 13, wherein the intermediate circuit is connected to the power supply mains, preferably by way of a mains connection module.
16. A method of power supply of a shaping machine, wherein
at least one drive of the shaping machine is supplied with electric power by way of an intermediate circuit, and
a voltage or a current is measured at the intermediate circuit, wherein
a first range and a second range is established for the measured voltage or the measured current, wherein the second range is smaller than the first range and is contained completely in the first range, and
a mains power furnished by the power supply mains to an intermediate circuit is increased in magnitude if the measured voltage or the measured current leaves the first range and the mains power is reduced in magnitude if the measured voltage or the measured current passes into the second range.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A chemically stable antioxidant compound, comprising:
a lipophilic cationic moiety linked by a linking moiety to an antioxidant moiety; and
an anionic complement for said cationic moiety,

wherein the cationic moiety is capable of mitochondrially targeting the antioxidant moiety,
wherein the anionic complement is a pharmaceutically acceptable anion that is not a halogen ion or a nitrate anion and is selected from the group consisting of an alkyl sulfonate, an aryl sulfonate, tetrafluoroborate, trifluoromethanesulfonate, hexafluoroantimonate, hexafluoroarsenate, hexafluorophosphate, tetraphenylborate, and tetra(perfluorophenyl)borate, and does not exhibit reactivity against the antioxidant moiety, the cationic moiety or the linking moiety, and wherein the antioxidant compound exhibits less than 10% decomposition after 60 days at 25\xb0 C., 50% relative humidity, the antioxidant compound having the general formula I:
or its quinol form, wherein R1, R2, and R3 are the same or different and are selected from C1 to C5 alkyl, substituted C1 to C5 alkyl and H, wherein R4 and R5 are independently selected from the group consisting of H, hydroxyl, carboxyl, amide, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl and unsubstituted or substituted alkynyl, and wherein n is an integer from 2 to 20, and wherein Z is the anionic complement.
2. A compound according to claim 1 wherein the lipophilic cationic moiety is a substituted or an unsubstituted triphenylphosphonium cation.
3. The compound of claim 1 wherein the pharmaceutically acceptable anion is not a halogen ion.
4. The compound of claim 1 wherein the pharmaceutically acceptable anion is not nucleophilic.
5. The compound of claim 1 wherein the pharmaceutically acceptable anion is an alkyl sulfonate.
6. The compound of claim 1 wherein the pharmaceutically acceptable anion is selected from the group consisting of methanesulfonate, p-toluenesulfonate, ethanesulfonate, benzenesulfonate and 2-naphthalenesulfonate.
7. The compound of claim 1 wherein the pharmaceutically acceptable anion is methanesulfonate.
8. The compound according to claim 1 wherein the antioxidant moiety is a quinone or a quinol.
9. The compound according to claim 1 wherein the quinone or quinol antioxidant moiety is replaced with an antioxidant moiety that is selected from the group consisting of (i) vitamin E (ii) a chain breaking antioxidant, (iii) a fullerene, and (iv) a spin trap.
10. The compound according to claim 1 wherein the quinone or quinol antioxidant moiety is replaced with an antioxidant moiety that is selected from the group consisting of butylated hydroxyanisole, butylated hydroxytoluene, 5,5-dimethylpyrroline-N-oxide, tert-butylnitrosobenzene, tert-nitrosobenzene and \u03b1-phenyl-tert-butylnitrone.
11. The compound according to claim 1 wherein Z is selected from the group consisting of an alkyl sulfonate and an aryl sulfonate.
12. The compound according to claim 1 wherein C of (C)n is saturated.
13. A compound according to claim 1 having the formula:
or its quinol form, wherein Z is the anionic complement.
14. A compound according to claim 1 having the formula:
or its quinol form.
15. A pharmaceutical composition, comprising:
(a) a chemically stable antioxidant compound that comprises a lipophilic cationic moiety linked by a linking moiety to an antioxidant moiety;
an anionic complement for said cationic moiety, wherein the cationic moiety is capable of mitochondrially targeting the antioxidant moiety, wherein the anionic complement is a pharmaceutically acceptable anion that is not a halogen ion or a nitrate anion and is selected from the group consisting of an alkyl sulfonate, an aryl sulfonate, tetrafluoroborate, trifluoromethanesulfonate, hexafluoroantimonate, hexafluoroarsenate, hexafluorophosphate, tetraphenylborate, and tetra(perfluorophenyl)borate, and does not exhibit reactivity against the antioxidant moiety, the cationic moiety or the linking moiety, and wherein the antioxidant compound exhibits less than 10% decomposition after 60 days at 25\xb0 C., 50% relative humidity, the antioxidant compound having the general formula I:
or its quinol form, wherein R1, R2, and R3 are the same or different and are selected from C1to C5 alkyl, substituted C1 to C5 alkyl and H, wherein R4 and R5 are independently selected from the group consisting of H, hydroxyl, carboxyl, amide, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl and unsubstituted or substituted alkynyl, and wherein n is an integer from 2 to 20, and wherein Z is the anionic complement; and
(b) a carrier or excipient.
16. The pharmaceutical composition of claim 15 wherein the lipophilic cationic moiety is a substituted or an unsubstituted triphenylphosphonium, cation.
17. The pharmaceutical composition of claim 15 wherein the pharmaceutically acceptable anion is selected from the group consisting of (i) an alkyl sulfonate, (ii) a pharmaceutically acceptable anion that is not a halogen ion, and (iii) a pharmaceutically acceptable anion that is not nucleophilic.
18. The pharmaceutical composition of claim 15 wherein the pharmaceutically acceptable anion is selected from the group consisting of methanesulfonate, p-toluenesulfonate, ethanesulfonate, benzenesulfonate and 2-naphthalenesulfonate.
19. The pharmaceutical composition of claim 15 wherein the pharmaceutically acceptable anion is methanesulfonate.
20. The pharmaceutical composition of claim 15 wherein the quinone or quinol antioxidant moiety is replaced with an antioxidant moiety that is selected from the group consisting of (i) vitamin E, (iii) a chain breaking antioxidant, (iii) a fullerene, and (iv) a spin trap.
21. The pharmaceutical composition according to claim 15 wherein Z is selected from the group consisting of an alkyl sulfonate and an aryl sulfonate.
22. The pharmaceutical composition according to claim 15 wherein C of (C)n is saturated.
23. The pharmaceutical composition according to claim 15 wherein the compound has the formula:
or its quinol form, wherein Z is the anionic complement.
24. The pharmaceutical composition according to claim 15 wherein the compound has the formula:
25. The pharmaceutical composition according to either claim 23 or claim 24 which comprises cyclodextrin.
26. The pharmaceutical composition of claim 25 wherein the compound and cyclodextrin are present at a compound-to-cyclodextrin molar ratio that is from about 10:1 to about 1:10.
27. The pharmaceutical composition of claim 25 wherein the compound and cyclodextrin are present at a compound-to-cyclodextrin molar ratio that is selected from the group consisting of (i) from about 5:1 to about 1:5, (ii) from about 4:1 to about 1:4, (iii) from about 2:1 to about 1:2, (iv) about 1:1 and (v) about 1:2.
28. The pharmaceutical composition according to claim 25 wherein the cyclodextrin is \u03b2-cyclodrextrin.
29. The pharmaceutical composition according to claim 24 which comprises cyclodextrin wherein the compound and cyclodextrin are present at a compound-to-cyclodextrin molar ratio that is about 1:2.
30. The pharmaceutical composition according to claim 15 that is selected from the group consisting of a pharmaceutical composition that is formulated for oral administration and a pharmaceutical composition that is formulated for parenteral administration.
31. The pharmaceutical composition according to claim 24 which comprises cyclodextrin, and that is selected from the group consisting of a pharmaceutical composition that is formulated for oral administration and a pharmaceutical composition that is formulated for parenteral administration.
32. A method of reducing oxidative stress in a cell, comprising:
contacting a cell that comprises mitochondria with a chemically stable antioxidant compound that comprises (i) a lipophilic cationic moiety linked by a linking moiety to an antioxidant moiety, and (ii) an anionic complement for said cationic moiety, wherein the cationic moiety is capable of mitochondrially targeting the antioxidant moiety, wherein the anionic complement is a pharmaceutically acceptable anion that is not a halogen ion or a nitrate anion and is selected from the group consisting of an alkyl sulfonate, an aryl sulfonate, tetrafluoroborate, trifluoromethanesulfonate, hexafluoroantimonate, hexafluoroarsenate, hexafluorophosphate, tetraphenylborate, and tetra(perfluorophenyl)borate, and does not exhibit reactivity against the antioxidant moiety, the cationic moiety or the linking moiety, and wherein the antioxidant compound exhibits less than 10% decomposition after 60 days at 25\xb0 C., 50% relative humidity, under conditions and for a time sufficient for accumulation of the antioxidant compound in the mitochondria, and thereby reducing oxidative stress in the cell, the antioxidant compound having the general formula I:
or its quinol form, wherein R1, R2, and R3 are the same or different and are selected from C1 to C5 alkyl, substituted C1 to C5 alkyl and H, wherein R4 and R5 are independently selected from the group consisting of H, hydroxyl, carboxyl, amide, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl and unsubstituted or substituted and wherein n is an integer from 2 to 20, and wherein Z is the anionic complement.
33. The method of claim 32 wherein the lipophilic cationic moiety is a substituted or an unsubstituted triphenylphosphonium cation.
34. The method of claim 32 wherein the pharmaceutically acceptable anion is selected from the group consisting of (i) an alkyl sulfonate, (ii) a pharmaceutically acceptable anion that is not a halogen ion, and (iii) a pharmaceutically acceptable anion that is not nucleophilic.
35. The method of claim 32 wherein the pharmaceutically acceptable anion is selected from the group consisting of methanesulfonate, p-toluenesulfonate, ethanesulfonate, benzenesulfonate and 2-naphthalenesulfonate.
36. The method of claim 32 wherein the pharmaceutically acceptable anion is methanesulfonate.
37. The method of claim 32 wherein the quinone or quinol antioxidant moiety is replaced with an antioxidant moiety that is selected from the group consisting of (i) vitamin E (iii) a chain breaking antioxidant, (iii) a fullerene, and (iv) a spin trap.
38. The method of claim 32 wherein Z is selected from the group consisting of an alkyl sulfonate and an aryl sulfonate.
39. The method of claim 32 wherein C of (C)n is saturated.
40. The method of claim 32 wherein the antioxidant compound has the formula:
or its quinol form, wherein Z is the anionic complement.
41. The method of claim 32 wherein the antioxidant compound has the formula:
42. The method of either claim 40 or claim 41 wherein the antioxidant compound is present in a pharmaceutical composition that further comprises a carrier or excipient, wherein said carrier or excipient comprises cyclodextrin.
43. The method of claim 42 wherein the antioxidant compound and cyclodextrin are present at a compound-to-cyclodextrin molar ratio that is from about 10:1 to about 1:10.
44. The method of claim 42 wherein the compound and cyclodextrin are present at a compound-to-cyclodextrin molar ratio that is selected from the group consisting of (i) from about 5:1 to about 1:5, (ii) from about 4:1 to about 1:4, (iii) from about 2:1 to about 1:2, (iv) about 1:1 and (v) about 1:2.
45. The method of claim 42 wherein the cyclodextrin is \u03b2-cyclodextrin.
46. The method of claim 42 wherein the compound and cyclodextrin are present at a compound-to-cyclodextrin molar ratio that is about 1:2.
47. A method of preparing an antioxidant compound that is capable of reducing oxidative stress in a cell, comprising admixing cyclodextrin or a cyclodextrin derivative that is selected from \u03b2-cyclodextrin, sulfobutylcyclodextrin, maltosylcyclodextrin, and hydroxypropylcyclodextrin, with a compound of the formula I
or its quinol form, wherein R1, R2, and R3 are the same or different and are selected from C1 to C5 alkyl, substituted C1 to C5 alkyl and H, wherein R4 and R5 are independently selected from the group consisting of H, hydroxyl, carboxyl, amide, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl and unsubstituted or substituted alkynyl, wherein n is an integer from 2 to 20, wherein Z is a pharmaceutically acceptable anion that is not a bromide ion or a nitrate anion and does not exhibit reactivity against any moiety of the compound of formula I, and wherein the compound exhibits less than 10% decomposition after 60 days at 25\xb0 C., 50% relative humidity.
48. A method of preparing an antioxidant compound that is capable of reducing oxidative stress in a cell, comprising admixing cyclodextrin or a cyclodextrin derivative that is selected from \u03b2-cyclodextrin, sulfobutylcyclodextrin, maltosylcyclodextrin, and hydroxypropylcyclodextrin, with a compound having the formula:
or its quinol form, wherein the compound exhibits less than 10% decomposition after 60 days at 25\xb0 C., 50% relative humidity.
49. A method of synthesis of a compound having the formula
or its quinol form, said method comprising reacting idebenol mesylate with triphenylphosphine, wherein the compound exhibits less than 10% decomposition after 60 days at 25\xb0 C., 50% relative humidity.
50. The method of claim 49 which comprises chemically reducing idebenone mesylate to obtain idebenol mesylate prior to the step of reacting the idebenol mesylate with triphenylphosphine.
51. The method of claim 49 further comprising, prior to the reaction of idebenone mesylate with triphenylphosphine, the steps of:
(a) adding triethylamine to an idebenone solution to obtain an idebenone triethylamine mixture;
(b) cooling the idebenone triethylamine mixture of (a); and
I reacting the idebenone triethylamine mixture with a methanesulfonyl chloride solution to obtain idebenone mesylate.
52. The method of claim 51 comprising at least one of:
(i) step (a) wherein adding triethylamine comprises adding a molar excess of triethylamine relative to idebenone,
(ii) step (b) wherein cooling comprises cooling to 10\xb13\xb0 C., and
(iii) step I wherein reacting comprises reacting at approximately 10-15\xb0 C.

1. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm and a lower arm and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling said voltage converter so as to reduce influence of a dead time of said voltage converter on a duty of said switching, said duty being a period for which the upper arm or the lower arm is kept ON in one control period length,
wherein when a voltage command value of said voltage conversion, corresponding to a calculated target value of an input voltage for the inverter, is larger than a power supply voltage and smaller than a predetermined voltage and said power supply voltage is smaller than a predetermined set value, said control device controls said voltage converter by setting said duty to a duty for instructing to stop said voltage conversion,
when said voltage command value is larger than said power supply voltage and smaller than said predetermined voltage and said power supply voltage is at least said predetermined set value, said control device controls said voltage converter by setting said duty to a duty for instructing to perform said voltage conversion, and
said predetermined set value is set based on an allowable maximum voltage of said power supply, a maximum value of DC current of said power supply when said voltage converter makes a transition to a state where said voltage conversion is stopped, and an internal resistance of said power supply.
2. The voltage conversion device according to claim 1, wherein said internal resistance is set to a maximum value of the internal resistance that can be taken by said power supply.
3. The voltage conversion device according to claim 1, wherein
said internal resistance is set to a measured value of said internal resistance.
4. The voltage conversion device according to claim 1, wherein said internal resistance is set based on the temperature of said power supply.
5. The voltage conversion device according to claim 1, wherein
said maximum value of the DC current is set based on a detected value of an output voltage of said voltage converter and a detected value of said power supply voltage.
6. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm that is made ON at a first on-duty and a lower arm that is made ON at a second on-duty determined by subtracting said first on-duty from 1, and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling switching of said upper arm and said lower arm by setting said first on-duty to an appropriate on-duty, when said first on-duty calculated based on a voltage command value of the voltage conversion by said voltage converter is influenced by a dead time of said upper arm and said lower arm and a power supply voltage is influenced by said dead time,
wherein when said first on-duty calculated based on said voltage command value is larger than a maximum effective on-duty and smaller than a longest on-duty for keeping said upper arm ON for a control period length and said power supply voltage is at least a predetermined set value, said control device controls switching of said upper arm and said lower arm by setting said first on-duty to said maximum effective on-duty, said maximum effective on-duty is determined by dividing, by said control period length, an effective control period length determined by subtracting said dead time from said control period length, and
said predetermined set value is determined by subtracting, from an allowable maximum voltage of said power supply, a product of an internal resistance of said power supply and a maximum value of DC current of said power supply when said first on-duty is switched to said longest on-duty.
7. The voltage conversion device according to claim 6, wherein
when said first on-duty calculated based on said voltage command value is larger than the maximum effective on-duty and smaller than the longest on-duty for keeping said upper arm ON for the control period length and said power supply voltage is smaller than the predetermined set value, said control device controls switching of said upper arm and said lower arm by setting said first on-duty to said longest on-duty.
8. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm that is made ON at a first on-duty and a lower arm that is made ON at a second on-duty determined by subtracting said first on-duty from 1, and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm, said first on-duty being a period for which the upper arm is kept ON in one control period length and said second on-duty being a period for which the lower arm is kept ON in one control period length; and
a control device controlling switching of said upper arm and said lower arm by setting said first on-duty by making a switch, at a predetermined ratio, between a maximum effective on-duty and a longest on-duty at which said upper arm is kept ON for a control period length, when said first on-duty calculated based on a voltage command value of the voltage conversion by said voltage converter is influenced by a dead time of said upper arm and said lower arm, wherein
said maximum effective on-duty is determined by dividing an effective control period length by said control period length, where said effective control period length is determined by subtracting said dead time from said control period lengths,
when a voltage command value of said voltage conversion, corresponding to a calculated target value of an input voltage for the inverter, is larger than a power supply voltage and smaller than a predetermined voltage and said power supply voltage is smaller than a predetermined set value, said control device controls said voltage converter by setting said duty to a duty for instructing to stop said voltage conversion,
when said voltage command value is larger than said power supply voltage and smaller than said predetermined voltage and said power supply voltage is at least said predetermined set value, said control device controls said voltage converter by setting said duty to a duty for instructing to perform said voltage conversion, and
said predetermined set value is set based on an allowable maximum voltage of said power supply, a maximum value of DC current of said power supply when said voltage converter makes a transition to a state where said voltage conversion is stopped, and an internal resistance of said power supply.
9. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm and a lower arm and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling said voltage converter so as to reduce influence of a dead time of said voltage converter on a duty of said switching, said duty being a period for which the upper arm or the lower arm is kept ON in one control period length,
wherein in a case where a voltage command value of the voltage conversion by said voltage converter is larger than a power supply voltage and smaller than a predetermined voltage, said control device controls said voltage converter by setting said duty using a first duty that is a duty when a voltage of at least said predetermined voltage is said voltage command value and a second duty that is a duty when said power supply voltage is said voltage command value, and
said control device sets said duty by making a switch between said first duty and said second duty at a predetermined ratio.
10. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm and a lower arm and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling said voltage converter so as to reduce influence of a dead time of said voltage converter on a duty of said switching, said duty being a period for which the upper arm or the lower arm is kept ON in one control period length,
wherein in a case where there is a possibility that a surge of DC current of said power supply occurs, said control device controls said voltage converter by setting said duty using a first duty that is a duty when a voltage of at least a predetermined voltage is a voltage command value and a second duty that is a duty when a power supply voltage is said voltage command value, and
said control device sets said duty by making a switch between said first duty and said second duty at a predetermined ratio.
11. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm that is made ON at a first on-duty and a lower arm that is made ON at a second on-duty determined by subtracting said first on-duty from 1, and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling switching of said upper arm and said lower arm by changing a carrier frequency at which switching of said upper arm and said lower arm is controlled, according to an increase of said first on-duty, when said first on-duty calculated based on a voltage command value of the voltage conversion by said voltage converter is influenced by a dead time of said upper arm and said lower arm, wherein
said control device changes said carrier frequency in a predetermined period at start of said voltage conversion and in a predetermined period at a transition to a state where said voltage conversion is stopped.
12. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm and a lower arm and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling said voltage converter so as to reduce influence of a dead time of said voltage converter on a duty of said switching wherein when a voltage command value of the voltage conversion by said voltage converter is larger than a power supply voltage and smaller than a predetermined voltage, said control device controls said voltage converter by changing a carrier frequency at which switching of said upper arm and said lower arm is controlled, wherein
when said control device performs control for stepping down an output voltage of said voltage converter or control for stepping up the output voltage of said voltage converter and said voltage command value is larger than said power supply voltage and smaller than said predetermined voltage, said control device changes said carrier frequency.
13. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm and a lower arm and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling said voltage converter so as to reduce influence of a dead time of said voltage converter on a duty of said switching wherein when a voltage command value of the voltage conversion by said voltage converter is larger than a power supply voltage and smaller than a predetermined voltage, said control device controls said voltage converter by changing a carrier frequency at which switching of said upper arm and said lower arm is controlled, wherein
when said control device performs control for stepping down an output voltage of said voltage converter and said voltage command value is larger than said power supply voltage and smaller than said predetermined voltage, said control device changes said carrier frequency.
14. A voltage conversion device variably changing an input voltage to an inverter, the voltage conversion device comprising:
a voltage converter including an upper arm and a lower arm and performing voltage conversion between a power supply and said inverter by switching of said upper arm and said lower arm; and
a control device controlling said voltage converter so as to reduce influence of a dead time of said voltage converter on a duty of said switching wherein when a voltage command value of the voltage conversion by said voltage converter is larger than a power supply voltage and smaller than a predetermined voltage, said control device controls said voltage converter by changing a carrier frequency at which switching of said upper arm and said lower arm is controlled, wherein said predetermined voltage is determined based on the dead time of said voltage converter.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An LCD (liquid crystal display device) having a liquid crystal panel including an active region serving as a display region and an outer region serving as a non-display region, the LCD comprising:
a first substrate including an array unit and a color filter formed in the active region;
an ESD (electrostatic discharge) circuit formed in the outer region;
a pattern spacer formed on the ESD;
a second substrate facing the first substrate; and
a sealant for attaching the first and second substrates together.
2. The LCD according to claim 1, wherein a pattern spacer for maintaining a gap between the first and second substrates is further formed in the active region.
3. The LCD according to claim 1, wherein the ESD comprises a plurality of TFTs (thin film transistors).
4. The LCD according to claim 1, wherein the pattern spacer is formed on a partial surface or an entire surface of the ESD.
5. The LCD according to claim 1, wherein the ESD is formed under the sealant.
6. The LCD according to claim 1, wherein the ESD is formed inwardly from the sealant.
7. The LCD according to claim 1, wherein the ESD is formed outwardly from the sealant.
8. The LCD according to claim 1, wherein the first substrate comprises:
a gate line formed thereon in one direction;
a gate electrode formed thereon;
a gate pad formed at the outer region;
a gate insulating layer formed on the gate line;
a semiconductor layer formed on the gate insulating layer at a position corresponding to a TFT;
a data line intersected by the gate line to define a pixel region;
source and drain electrodes protruded from the semiconductor layer;
a black matrix formed on the TFT, the gate line and the data line;
a color filter formed in the pixel region;
an overcoat layer formed on the black matrix and the color filter; and
a pixel electrode formed on the overcoat layer to be connected to the drain electrode.
9. The LCD according to claim 8, wherein an overcoat layer is further formed on the source and drain electrodes.
10. The LCD according to claim 8, wherein a semiconductor layer is further formed beneath the data line.
11. The LCD according to claim 8, wherein the overcoat layer is made of photo acryl or inorganic material.
12. The LCD according to claim 8, wherein a pattern spacer is further formed on the gate pad.
13. The LCD according to claim 1, wherein the first substrate comprises:
a color filter formed thereon;
a gate line formed thereon in one direction;
a gate electrode formed thereon;
a gate pad formed at the outer region;
a gate insulating layer formed on the gate line;
a semiconductor layer formed on the gate insulating layer at a position corresponding to a TFT;
a data line intersected by the gate line to define a pixel region;
source and drain electrodes protruded from the semiconductor layer;
a black matrix formed on the TFT, the gate line and the data line;
an overcoat layer formed on the black matrix; and
a pixel electrode formed on the overcoat layer to be connected to the drain electrode.
14. A method for manufacturing an LCD (liquid crystal display device), the method comprising:
forming an array unit, a color filter and a black matrix in a display region on a first substrate and forming an ESD (electrostatic discharge) circuit and an outer black matrix in a non-display region;
forming a pattern spacer in the display region and forming a pattern spacer on a partial surface or an entire surface of the ESD circuit;
attaching the first substrate and a second substrate facing the first substrate together using a sealant; and
forming a liquid crystal layer between the first and second substrates.
15. The method according to claim 14, wherein the ESD comprises a plurality of TFTs (thin film transistors).
16. The method according to claim 14, wherein the ESD is formed under the sealant.
17. The method according to claim 14, wherein the ESD is formed inwardly from the sealant.
18. The method according to claim 14, wherein the ESD is formed outwardly from the sealant.
19. The method according to claim 14, wherein the forming of the first substrate comprises:
forming on a substrate a gate line, a gate pad, and a data line intersecting the gate line to define a pixel region;
forming a TFT (thin film transistor) at an intersection between the gate line and the data line, the TFT including a gate electrode and an active layer and sourcedrain electrodes;
forming a black matrix on the TFT, the gate line and the data line;
forming an RGB color filter in the pixel region; and
forming a pixel electrode on the color filter.
20. The method according to claim 14, wherein the forming of the first substrate comprises:
forming a color filter on a substrate;
forming a TFT on the color filter in a pixel region defined by a gate line and a data line intersecting the gate line, the TFT including a gate electrode and an active layer and sourcedrain electrodes;
forming a black matrix on the TFT, the gate line and the data line; and
forming a pixel electrode on the pixel region.
21. The method according to claim 19, wherein a pattern spacer is formed on the gate pad.
22. An LCD (liquid crystal display device) having a liquid crystal panel including an active region serving as a display region and an outer region serving as a non-display region, the LCD comprising:
a gate line formed in one direction on a first substrate;
a gate electrode formed on the first substrate;
a gate pad formed at the outer region;
a gate insulating layer formed on the gate line;
a semiconductor layer formed on the gate insulating layer at a position corresponding to a TFT (thin film transistor);
a data line intersected by the gate line to define a pixel region;
source and drain electrodes protruded from the semiconductor layer;
a black matrix formed on the TFT, the gate line and the data line;
a color filter formed in the pixel region;
an overcoat layer formed on the black matrix and the color filter;
a pixel electrode formed on the overcoat layer to be connected to the drain electrode;
a transparent common electrode formed to alternate with the pixel electrode;
an ESD (electrostatic discharge) circuit formed in the outer region;
a pattern spacer formed on the ESD, the TFT and the gate pad;
a second substrate facing the first substrate; and
a sealant for attaching the first and second substrates together.
23. The LCD according to claim 22, wherein the ESD comprises a plurality of TFTs.
24. The LCD according to claim 22, wherein the pattern spacer is formed on a partial surface or an entire surface of the ESD.
25. The LCD according to claim 22, wherein the ESD is formed under the sealant.
26. The LCD according to claim 22, wherein the ESD is formed inwardly from the sealant.
27. The LCD according to claim 22, wherein the ESD is formed outwardly from the sealant.
28. The LCD according to claim 22, wherein a metal common electrode is further formed on the gate line layer near the data line.
29. The LCD according to claim 28, wherein the metal common electrode is connected to the transparent common electrode by a common electrode link.
30. The LCD according to claim 29, wherein a pattern spacer is further formed on the common electrode link region.
31. The LCD according to claim 22, wherein the pixel electrode and the transparent common electrode are made of transparent conductive material.
32. The LCD according to claim 22, wherein an overcoat layer is further formed on the source and drain electrodes.
33. The LCD according to claim 22, wherein a semiconductor layer is further formed beneath the data line.
34. The LCD according to claim 22, wherein the overcoat layer is made of photo acryl or inorganic material.
35. A method for manufacturing an LCD (liquid crystal display device) having a liquid crystal panel including an active region serving as a display region and an outer region serving as a non-display region, the method comprising:
forming in the active region on a first substrate a gate line, a gate pad, and a data line intersecting the gate line to define a pixel region and forming a TFT (thin film transistor) at an intersection between the gate line and the data line, the TFT including a gate electrode and an active layer and sourcedrain electrodes;
forming an ESD (electrostatic discharge) circuit in an outer region of the first substrate;
forming a black matrix on the TFT, the gate line, the data line and the outer region;
forming an RGB color filter in the pixel region;
forming an overcoat layer on the color filter;
forming a pixel electrode and a transparent common electrode on the overcoat layer;
forming a pattern spacer on the ESD circuit and the gate pad;
attaching the first substrate and a second substrate facing the first substrate together using a sealant; and
forming a liquid crystal layer between the first and second substrates.
36. The method according to claim 35, further comprising forming a metal common electrode near the data line during the forming of the gate line.
37. The method according to claim 35, further comprising forming an overcoat layer on the source and drain electrodes.
38. The method according to claim 36, wherein the metal common electrode is connected to the transparent common electrode by a common electrode link.
39. The method according to claim 38, wherein a pattern spacer is further formed on the common electrode link region.
40. The method according to claim 36, wherein the pixel electrode and the transparent common electrode are made of transparent conductive material.
41. The method according to claim 36, wherein the ESD is formed under the sealant.
42. The method according to claim 36, wherein the ESD is formed inwardly from the sealant.
43. The method according to claim 36, wherein the ESD is formed outwardly from the sealant.