Author: claimsbot

1. Geodetic target, comprising:
an orienting device with a bearing direction;
a first inclinometer with a first axis of inclination, the first inclinometer configured to determine an inclination of the geodetic target about the first axis of inclination;
a reflector configured to reflect a first portion of a measurement beam that is generated by a source external to the geodetic target and that is incident on the reflector, the reflector configured to reflect the first portion of the measurement beam in a direction substantially towards the source;
an imaging optics configured to focus a second portion of the measurement beam that is incident on the imaging optics;
a matrix sensor, whose receiving surface is situated in an image plane of the imaging optics, the imaging optics configured to focus the second portion of the measurement beam in an image point on the matrix sensor; and
an interface, which is connected to the first inclinometer and the matrix sensor;
wherein a spatial arrangement and orientation of an axis of symmetry of the reflector relative to the bearing direction of the orienting device is predetermined;
wherein the first axis of inclination makes an angle a different from zero with an optical axis of the imaging optics;
wherein the optical axis of the imaging optics coincides with the axis of symmetry of the reflector or is parallel to it;
wherein a location of the image point on the matrix sensor is dependent on an orientation of the reflector relative to the second portion of the measurement beam; and
wherein the interface is designed to put out signals received from the first inclinometer and the matrix sensor to determine a spatial orientation of the reflector relative to a target point lying in the bearing direction.
2. Geodetic target according to claim 1,
wherein the orienting device is a range finder that includes a laser range finder or a laser projector or a camera or a display or a video projector; and
wherein the interface is connected to the orienting device and designed to put out the signals received from the first inclinometer, the matrix sensor and the orienting device to determine a spatial position and the spatial orientation of the reflector relative to the target point.
3. Geodetic target according to claim 2,
wherein the geodetic target further comprises a second inclinometer with a second axis of inclination, wherein the first axis of inclination of the first inclinometer and the second axis of inclination of the second inclinometer make an angle \u03b2 different from zero; or
wherein the first inclinometer has a second axis of inclination, wherein the first axis of inclination of the first inclinometer and the second axis of inclination of the first inclinometer make an angle \u03b2 different from zero.
4. Geodetic target according to claim 2, further comprising a control system configured to receive the signals put out by the interface, which control system uses the signals to determine the spatial position and the spatial orientation of the reflector relative to the target point.
5. Geodetic target according to claim 2, wherein the geodetic target is integrated in a helmet, a projector, or a machine tool.
6. Geodetic target according to claim 1,
wherein the orienting device is a survey rod or a ranging rod or a rover rod or a tool or a drill or a spacer; and
wherein the interface is designed to put out the signals received by the first inclinometer and the matrix sensor, as well as an arrangement and dimensioning of the orienting device, to determine a spatial position and the spatial orientation of the reflector relative to the target point.
7. Geodetic target according to claim 6, wherein the geodetic target is integrated in a helmet, a projector, or a machine tool.
8. Geodetic target according to claim 1, comprising at least two reflectors with corresponding imaging optics as well as a mirror arrangement, wherein the mirror arrangement is situated along the optical axes of the imaging optics between the imaging optics and the matrix sensor.
9. Geodetic target according to claim 8, further comprising a filter arranged between the receiving surface of the matrix sensor and the imaging optics or between the receiving surface of the matrix sensor and the reflector.
10. Geodetic target according to claim 8,
wherein the geodetic target further comprises a second inclinometer with a second axis of inclination, wherein the first axis of inclination of the first inclinometer and the second axis of inclination of the second inclinometer make an angle \u03b2 different from zero; or
wherein the first inclinometer has a second axis of inclination, wherein the first axis of inclination of the first inclinometer and the second axis of inclination of the first inclinometer make an angle \u03b2 different from zero.
11. Geodetic target according to claim 8, further comprising a control system configured to receive the signals put out by the interface, which control system uses the signals to determine the spatial orientation of the reflector relative to the target point.
12. Geodetic target according to claim 8, wherein the geodetic target is integrated in a helmet, a projector, or a machine tool.
13. Geodetic target according to claim 1, further comprising a filter arranged between the receiving surface of the matrix sensor and the imaging optics or between the receiving surface of the matrix sensor and the reflector.
14. Geodetic target according to claim 1,
wherein the geodetic target further comprises a second inclinometer with a second axis of inclination, wherein the first axis of inclination of the first inclinometer and the second axis of inclination of the second inclinometer make an angle \u03b2 different from zero; or
wherein the first inclinometer has a second axis of inclination, wherein the first axis of inclination of the first inclinometer and the second axis of inclination of the first inclinometer make an angle \u03b2 different from zero.
15. Geodetic target according to claim 14, further comprising a control system configured to receive the signals put out by the interface, which control system uses the signals to determine the spatial orientation of the reflector relative to the target point.
16. Geodetic target according to claim 14, wherein the geodetic target is integrated in a helmet, a projector, or a machine tool.
17. Geodetic target according to claim 1, further comprising a control system configured to receive the signals put out by the interface, which control system uses the signals to determine the spatial orientation of the reflector relative to the target point based on the inclination of the geodetic target about the first axis of inclination and a position of the image point on the matrix sensor.
18. Geodetic target according to claim 17, wherein the geodetic target is integrated in a helmet, a projector, or a machine tool.
19. Geodetic target according to claim 1, wherein the geodetic target is integrated in a helmet, a projector, or a machine tool.
20. Position determining system for geodesy, comprising:
a geodetic target according to claim 1, and
a geodetic instrument;
wherein the geodetic instrument comprises a measurement device configured to determine a spatial position of the reflector relative to the geodetic instrument; and
wherein the geodetic instrument comprises a control system, which is designed to receive the signals put out by the interface of the geodetic target and to use the signals, as well as the spatial position determined by the measurement device of the reflector relative to the geodetic instrument to determine a relative position of the target point to the geodetic instrument.
21. Position determining system according to claim 20,
wherein the geodetic instrument comprises a location determining device that determines an absolute position of the geodetic instrument; and
wherein the control system of the geodetic instrument is designed to receive the signals put out by the interface of the geodetic target and to use the signals as well as the spatial position of the reflector as determined by the measurement device and the absolute position of the geodetic instrument as determined by the location determining device, to determine an absolute position of the target point.
22. Position determining system according to claim 20, wherein the control system of the geodetic instrument and the interface of the geodetic target are designed to synchronize the determination of the spatial position of the reflector by the measurement device with the putting out of the signals by the interface to determine the spatial orientation of the reflector relative to the target point lying in the bearing direction.
23. Method for establishing target points by using the position determining system according to claim 20, having the following steps:
orienting the bearing direction of the geodetic target to the target point;
determining the spatial position of the reflector of the geodetic target relative to the geodetic instrument;
determining the spatial position of the target point relative to the reflector; and
determining the spatial position of the target point relative to the geodetic instrument.
24. Method according to claim 23, further comprising marking of the target point by means of a laser beam or a video projection or indication of a display by the geodetic target.
25. Geodetic target according to claim 1, wherein the interface is configured to use the signals to determine the spatial orientation of the reflector relative to the target point based on the inclination of the geodetic target about the first axis of inclination and a position of the image point on the matrix sensor.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A radioisotope production gas target comprising:
a target chamber that is shaped of a hollow cylinder and has a plurality of inner fins protruding from an inner surface thereof along a length thereof; and
a body that is shaped of a hollow cylinder enclosing the target chamber, having a target gas inlet for feeding target gas to a hollow region of the target chamber, a target gas outlet for collecting the target gas after a nuclear reaction occurs, and a first coolant inlet and a first coolant outlet for respectively feeding and discharging a coolant flowing along an outer surface of the target chamber, and including a thin metal sheet in a front thereof through which a beam of protons passes.
2. The radioisotope production gas target as set forth in claim 1, wherein the body includes:
a front adaptor that is shaped of a ring, a central part of which is bored, and which has a circular groove on a radial outer side of the central part, that has the target gas inlet communicating with the bored central part in a front surface of the front adaptor and the first coolant inlet communicating with the groove in a rear surface of the front adaptor, and that is coupled to a front end of the target chamber such that the bored central part communicates with hollow region of the target chamber with the groove facing the target chamber;
a rear adaptor that is coupled to a rear end of the target chamber, which includes the target gas outlet in an outer circumference thereof communicating with the hollow region of the target chamber, and which includes at least one slot in an inner circumference thereof at a portion where the rear adaptor is coupled with the target chamber;
casings coupled between the front adaptor and the rear adaptor so as to enclose an outside of the groove of the front adaptor and an outside of the slot of the rear adaptor;
a front flange having a grid structure supporting a thin metal sheet and coupled to a front surface of the front adaptor; and
a rear flange having the first coolant outlet and coupled to a rear surface of the rear adaptor, and
wherein the thin metal sheet is disposed between the front adaptor and the front flange.
3. The radioisotope production gas target as set forth in claim 1 or 2, wherein the inner fins protrude from the inner surface of the target chamber along the length of the target chamber.
4. The radioisotope production gas target as set forth in claim 1 or 2, wherein the target chamber is formed by coupling a plurality of target chamber units having at least one of the inner fins.
5. The radioisotope production gas target as set forth in claim 4, wherein the target chamber units are coupled with each other by welding.
6. The radioisotope production gas target as set forth in claim 1 or 2, wherein the target chamber includes a plurality of outer fins protruding from the outer surface thereof along the length thereof.
7. The radioisotope production gas target as set forth in claim 1 or 2, wherein the target chamber includes a plurality of outer fins protruding from the outer surface thereof along the length thereof and is formed by coupling a plurality of target chamber units having at least one of the inner fins and at least one of the outer fins.
8. The radioisotope production gas target as set forth in claim 1 or 2, wherein the target chamber includes a plurality of outer fins protruding from the outer surface thereof along the length thereof and is formed by coupling a plurality of target chamber units having at least one of the inner fins and at least one of the outer fins, and the target chamber units are coupled with each other by welding.
9. The radioisotope production gas target as set forth in claim 2, wherein the front flange includes a groove formed around the grid structure, and a cover member covering a front of the groove, and has second coolant inlet and outlet in an outer circumference thereof.
10. The radioisotope production gas target as set forth in claim 9, wherein the second coolant inlet and outlet are formed so as to be opposite to each other.
11. The radioisotope production gas target as set forth in claim 2, wherein the rear adaptor includes a concave space recessed from a portion where the rear adaptor is coupled to the rear end of the target chamber.

1. A high temperature coated superconductor article, comprising:
a substrate having first and second surfaces opposite each other;
a buffer layer overlying the first opposite surface of the substrate;
a multifilament superconductor layer overlying the buffer layer;
and at least one stabilizer layer, wherein
a portion of said at least one stabilizer layer is adjacent to the superconducting layer, is striated and has a thickness of at least 5.0 microns.
2. The superconductor article of claim 1 wherein said multifilament superconductor layer comprises a high temperature superconductor material, having a critical temperature Tc not less than about 77 K.
3. The superconductor article of claim 1 wherein said multifilament superconductor layer comprises REBa2Cu3O7-x, wherein RE is a rare earth element.
4. The superconductor article of claim 1 wherein the multifilament superconducting layer is YBCO.
5. The superconductor article of claim 1 wherein the buffer layer comprises a biaxially crystal textured film having generally aligned crystals both in-plane and out-of-plane of the film.
6. The superconductor article of claim 1 wherein the substrate has a dimension ratio of not less than 103.
7. The superconductor article of claim 1 further comprising a non-conductive insulator layer.
8. The superconductor article of claim 1 wherein the at least one stabilizer layer extends so as to define first and second side regions that encapsulate the multifilament superconductor layer.
9. The superconductor article of claim 8 wherein the at least one stabilizer layer additionally overlies the second opposite surface of the substrate so as to encapsulate the superconducting article.
10. The superconductor article of claim 8 wherein the at least one stabilizer layer comprises a first and second stabilizer layer, and wherein said first and second stabilizer layer comprises striated portions adjacent to the superconductor layer and non-striated portions adjacent to the second opposite surface of the substrate so as to encapsulate the superconducting article.
11. The superconductor article of claim 10 wherein the first stabilizer layer has a thickness within a range of about 0.1 microns to about 10.0 microns.
12. The superconductor article of claim 10 wherein the first stabilizer layer has a thickness within a range of about 1.5 microns to about 3.0 microns.
13. The superconductor article of claim 10 wherein the first stabilizer layer comprises a noble metal.
14. The superconductor article of claim 13, wherein the noble metal is Ag.
15. The superconductor article of claim 10, wherein the second stabilizer layer comprises a non-noble metal.
16. The superconductor article of claim 15, wherein the non-noble metal comprises a material from the group consisting of copper, aluminum, and alloys thereof
17. The superconductor article of claim 15 wherein the non-noble metal is copper.
18. The superconductor article of claim 15 wherein the second stabilizer layer is electroplated.
19. A dual-sided high temperature coated superconductor article, comprising:
a substrate having first and second surfaces opposite each other;
a first buffer layer adjacent to the first surface of the substrate;
a second buffer layer adjacent to the second surface of the substrate;
a first multifilament superconductor layer adjacent to the first buffer layer;
a second multifilament superconductor layer adjacent to the second buffer layer; and
at least one stabilizer layer adjacent to the first and second multifilament superconductor layer,
wherein portions of the at least one stabilizer layer are striated and have a thickness of at least 5 microns,
and wherein the at least one stabilizer layer further extends to define first and second side regions that encapsulate the superconducting article.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A mixer comprises:
reference current source operably coupled to produce a reference current;
programmable gain radio frequency (RF) transconductance section operably coupled to convert an RF voltage into an RF current based on a gain setting signal and the reference current; and
switching quad transistors operably coupled to receive the RF current and a local oscillator voltage, wherein the switching quad transistors produce a frequency translated current.
2. The mixer of claim 1 further comprises:
current source pair operably coupled to provide DC current to the switching quad transistors;
common mode circuit operably coupled to provide a common mode voltage to the current source pair based on a common mode reference; and
resistor section operably coupled to switching quad transistors and to the current source pair to produce the common mode reference and to convert the frequency translated current into a frequency translated voltage.
3. The mixer of claim 1 further comprises:
current source pair operably coupled to provide DC current to the switching quad transistors;
common mode circuit operably coupled to provide a common mode voltage based on a common mode reference, wherein the common mode circuit includes:
resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
4. The mixer of claim 1 further comprises:
current source pair operably coupled to provide DC current to the switching quad transistors;
common mode circuit operably coupled to provide a common mode voltage based on a common mode reference, wherein the common mode circuit includes:
resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
second resistive divider operably coupled to the tap of the resistive divider to provide a scaled representation of the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the scaled representation of the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
5. The mixer of claim 1 further comprises:
resistor section operably coupled to convert the frequency translated current into a frequency translated voltage.
6. The mixer of claim 1, wherein the programmable gain RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
first tapped inductor operably coupled to the RF input transistor pair;
second tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the first and second tapped inductors and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a second gain.
7. The mixer of claim 1, wherein the programmable gain RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
differential tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the differential tapped inductor and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the differential tapped inductor to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the differential tapped inductors to the reference current source to provide a second gain.
8. The mixer of claim 1, wherein the switching quad transistors further comprises:
native transistors operably coupled to produce the frequency translated current such that flicker noise of the mixer is reduced and gate to body voltage of the switching quad transistors is reduced.
9. A mixer comprises:
reference current source operably coupled to produce a reference current;
radio frequency (RF) transconductance section operably coupled to convert an RF voltage into an RF current based on the reference current; and
switching quad native transistors operably coupled to receive the RF current and a local oscillator voltage, wherein the switching quad native transistors produce a frequency translated current such that flicker noise of the mixer is reduced and gate to body voltage of the switching quad native transistors is reduced.
10. The mixer of claim 9, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal; and
inductor pair operably coupled to the RF input transistor pair, to the reference current source, and to the switching quad native transistors.
11. The mixer of claim 9 further comprises:
current source pair operably coupled to provide DC current to the switching quad native transistors;
common mode circuit operably coupled to provide a common mode voltage based on a common mode reference, wherein the common mode circuit includes:
common mode circuit operably coupled to provide a common mode voltage to the current source pair based on a common mode reference, wherein the common mode circuit includes:
at least one resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
second resistive divider operably coupled to the tap of the resistive divider to provide a scaled representation of the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the scaled representation of the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
12. The mixer of claim 9 further comprises:
resistor section operably coupled to convert the frequency translated current into a frequency translated voltage.
13. The mixer of claim 9, wherein the RF transconductance section further comprises:
first tapped inductor;
second tapped inductor; and
selectable transistor section operably coupled to the first and second tapped inductors and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a second gain.
14. A mixer comprises:
reference current source operably coupled to produce a reference current;
radio frequency (RF) transconductance section operably coupled to convert an RF voltage into an RF current based on the reference current;
switching quad transistors operably coupled to receive the RF current and a local oscillator voltage, wherein the switching quad transistors produce a frequency translated current;
current source pair operably coupled to provide DC current to the switching quad transistors; and
common mode circuit operably coupled to provide a common mode voltage based on a common mode reference, wherein the common mode circuit includes:
resistor section operably coupled to switching quad transistors and to the current source pair to produce the common mode reference and to convert the frequency translated current into a frequency translated voltage.
15. The mixer of claim 14, wherein the common mode circuit further comprise:
resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
16. The mixer of claim 14, wherein the common mode circuit further comprise:
resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
second resistive divider operably coupled to the tap of the resistive divider to provide a scaled representation of the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the scaled representation of the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
17. The mixer of claim 14, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
first tapped inductor operably coupled to the RF input transistor pair;
second tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the first and second tapped inductors and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a second gain.
18. The mixer of claim 14, wherein the switching quad transistors further comprises:
native transistors operably coupled to produce the frequency translated current such that flicker noise of the mixer is reduced and gate to body voltage of the switching quad transistors is reduced.
19. The mixer of claim 14, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
inductor pair operably coupled to the RF input transistor pair, to the reference current source and to the switching quad native transistors.
20. An intermediate frequency (IF) module comprises:
local oscillator operably coupled to provide a local oscillation voltage;
first mixer operably coupled to mix an in-phase component of a signal with an in-phase component of the local oscillation voltage to produce an in-phase product;
second mixer operably coupled to mix a quadrature component of the signal with a quadrature component of the local oscillation voltage to produce a quadrature product, wherein each of the first and second mixers includes:
reference current source operably coupled to produce a reference current;
programmable gain radio frequency (RF) transconductance section operably coupled to convert voltage of the signal into current of the signal based on a gain setting signal and the reference current; and
switching quad transistors operably coupled to receive the current of the signal and the local oscillator voltage, wherein the switching quad transistors translate frequency of the current of the signal to produce the in-phase product and the quadrature product, respectively;

summing module operably coupled to sum the in-phase product and the quadrature product to produce a summed signal; and
filter module operably coupled to filter the summed signal to produce an IF signal.
21. The IF module of claim 20, wherein each of the first and second mixers further comprises:
current source pair operably coupled to provide DC current to the switching quad transistors;
common mode circuit operably coupled to provide a common mode voltage to the current source pair based on a common mode reference; and
resistor section operably coupled to switching quad transistors and to the current source pair to produce the common mode reference and to convert the frequency translated current into a frequency translated voltage.
22. The IF module of claim 20, wherein each of the first and second mixers further comprises:
resistor section operably coupled to convert the frequency translated current into a frequency translated voltage.
23. The IF module of claim 20, wherein the programmable gain RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
first tapped inductor operably coupled to the RF input transistor pair;
second tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the first and second tapped inductors and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a second gain.
24. The IF module of claim 20, wherein the programmable gain RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
differential tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the differential tapped inductor and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the differential tapped inductor to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the differential tapped inductors to the reference current source to provide a second gain.
25. The IF module of claim 20, wherein the switching quad transistors further comprises:
native transistors operably coupled to produce the frequency translated current such that flicker noise of the mixer is reduced and gate to body voltage of the switching quad transistors is reduced.
26. An intermediate frequency (IF) module comprises:
local oscillator operably coupled to provide a local oscillation voltage;
first mixer operably coupled to mix an in-phase component of a signal with an in-phase component of the local oscillation voltage to produce an in-phase product;
second mixer operably coupled to mix a quadrature component of the signal with a quadrature component of the local oscillation voltage to produce a quadrature product, wherein each of the first and second mixers includes:
reference current source operably coupled to produce a reference current;
radio frequency (RF) transconductance section operably coupled to convert a voltage of the signal into a current of the signal based on the reference current; and
switching quad native transistors operably coupled to receive the current of the signal and the local oscillator voltage, wherein the switching quad native transistors produce a frequency translated current as the in-phase produce and the quadrature product, respectively, such that flicker noise of the first and second mixers is reduced and gate to body voltage of the switching quad native transistors is reduced;
summing module operably coupled to sum the in-phase product and the quadrature product to produce a summed signal; and
filter module operably coupled to filter the summed signal to produce an IF signal.
27. The IF module of claim 26, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
inductor pair operably coupled to the RF input transistor pair, to the reference current source, and to the switching quad native transistors.
28. The IF module of claim 26, wherein each of the first and second mixers further comprises:
current source pair operably coupled to provide DC current to the switching quad native transistors;
common mode circuit operably coupled to provide a common mode voltage based on a common mode reference; and
resistor section operably coupled to switching quad native transistors and to the current source pair to produce the common mode reference and to convert the frequency translated current into a frequency translated voltage.
29. The IF module of claim 26, wherein each of the first and second mixers further comprises:
resistor section operably coupled to convert the frequency translated current into a frequency translated voltage.
30. The IF module of claim 26, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
first tapped inductor operably coupled to the RF input transistor pair;
second tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the first and second tapped inductors and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a second gain.
31. An intermediate frequency (IF) module comprises:
local oscillator operably coupled to provide a local oscillation voltage;
first mixer operably coupled to mix an in-phase component of a signal with an in-phase component of the local oscillation voltage to produce an in-phase product;
second mixer operably coupled to mix a quadrature component of the signal with a quadrature component of the local oscillation voltage to produce a quadrature product, wherein each of the first and second mixers includes:
reference current source operably coupled to produce a reference current;
radio frequency (RF) transconductance section operably coupled to convert a voltage of the signal into a current of the signal based on the reference current;
switching quad transistors operably coupled to receive the current of the signal and a local oscillator voltage, wherein the switching quad transistors produce a frequency translated current to represent the in-phase product and the quadrature product, respectively;
current source pair operably coupled to provide DC current to the switching quad transistors; and
common mode circuit operably coupled to provide a common mode voltage based on a common mode reference, wherein the common mode circuit includes:
resistor section operably coupled to switching quad transistors and to the current source pair to produce the common mode reference and to convert the frequency translated current into a frequency translated voltage;
summing module operably coupled to sum the in-phase product and the quadrature product to produce a summed signal; and
filter module operably coupled to filter the summed signal to produce an IF signal.
32. The IF module of claim 31, wherein the common mode circuit further comprise:
resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
33. The IF module of claim 31, wherein the common mode circuit further comprise:
resistive divider operably coupled to the switching quad transistors, wherein a tap of the resistive divider provides the common mode reference;
second resistive divider operably coupled to the tap of the resistive divider to provide a scaled representation of the common mode reference;
operational amplifier having inputs operably coupled to a reference voltage and to receive the scaled representation of the common mode reference;
transistor pair operably driven by an output of the operational amplifier; and
resistor pair operably coupled to the transistor pair to provide an output of the mixer.
34. The IF module of claim 31, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal;
first tapped inductor operably coupled to the RF input transistor pair;
second tapped inductor operably coupled to the RF input transistor pair; and
selectable transistor section operably coupled to the first and second tapped inductors and to the reference current source, wherein, based a first state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a first gain, and wherein, based on a second state of the gain setting signal, the selectable transistor section couples the first and second tapped inductors to the reference current source to provide a second gain.
35. The IF module of claim 31, wherein the switching quad transistors further comprises:
native transistors operably coupled to produce the frequency translated current such that flicker noise of the mixer is reduced and gate to body voltage of the switching quad transistors is reduced.
36. The IF module of claim 31, wherein the RF transconductance section further comprises:
RF input transistor pair operably coupled to receive the RF signal; and
inductor pair operably coupled to the RF input transistor pair, to the reference current source and to the switching quad native transistors.