1. An article comprising:
a strengthened glass substrate having a first surface and a second surface and having a Vickers crack initiation threshold of at least 20 kgf;
a barrier layer having a first surface and a second surface, wherein the first surface of the barrier layer is adjacent to the second surface of the strengthened glass substrate, and wherein the barrier layer comprises an oxide or a nitride; and
a device comprising a semiconductor film adjacent to the second surface of the barrier layer.
2. The article according to claim 1, wherein the barrier layer comprises the oxide having a formula of MxOy, wherein x is an integer from 1 to 6, y is an integer from 1 to 30 such that MxOy is a charge neutral species, and M is a metal or a non-metal.
3. The article according to claim 2, wherein the barrier layer is Aluminum Oxide.
4. The article according to claim 1, wherein the barrier layer comprises the nitride having a formula of MxNy, wherein x is an integer from 1 to 6, y is an integer from 1 to 30 such that MxNy is a charge neutral species, and M is a metal or a non-metal.
5. The article according to claim 4, wherein the barrier layer comprises Silicon Nitride.
6. The article according to claim 1, wherein the strengthened glass substrate is an ion-exchanged glass.
7. The article according to claim 1, further comprising a functional layer disposed on the first surface of the strengthened glass substrate.
8. The article according to claim 1, wherein the functional layer is selected from an anti-glare layer, an anti-smudge layer, a self-cleaning layer, an anti-reflection layer, an anti-fingerprint layer, an optically scattering layer, anti-splintering, and combinations thereof.
9. The article according to claim 1, wherein the strengthened glass substrate is curved.
10. The article according to claim 1, wherein the device is selected from a photovoltaic device, a thin-film transistor, a diode, and a display device.
11. The article according to claim 1, wherein the glass substrate is a glass sheet.
12. The article according to claim 1, wherein the barrier layer is disposed on the glass substrate.
13. The article according to claim 1, wherein the glass substrate is optically transparent.
14. The article according to claim 1, wherein the barrier layer is optically transparent.
15. The article according to claim 1, wherein the device is optically transparent.
16. The article according to claim 1, wherein the glass substrate, the barrier layer, and the device are optically transparent.
17. A method comprising:
providing a strengthened glass substrate having a first surface and a second surface and having a Vickers crack initiation threshold of at least 20 kgf;
applying a barrier layer having a first surface and a second surface, wherein the first surface of the barrier layer is adjacent to the second surface of the strengthened glass substrate, and wherein the barrier layer comprises an oxide or a nitride; and
forming a device comprising a semiconductor film adjacent to the second surface of the barrier layer.
18. The method according to claim 17, wherein the glass substrate is optically transparent.
19. The method according to claim 17, wherein the barrier layer is optically transparent.
20. The method according to claim 17, wherein the device is optically transparent.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A ring network, comprising:
a node including:
an optical switch coupled to a fiber of the ring network;
a transmit switch coupled to the optical switch;
a wavelength stacking assembly coupled to the transmit switch for aligning in time packets of varying wavelengths created by a tunable laser via a bank of delay lines;
a receive switch coupled to the optical switch; and
a wavelength unstacking assembly coupled to the receive switch.
2. The ring network of claim 1, wherein the transmit switch includes a buffer for storing packets, and the receive switch includes a buffer for storing received packets.
3. The ring network of claim 1, wherein the node performs a credit-based MAC protocol.
4. The ring network of claim 3, wherein the node further includes an admission controller for determining whether bandwidth requests are accepted based upon an available frame capacity.
5. A method for transmitting and receiving packets on a ring network, comprising:
stacking packets of varying wavelengths created by a tunable laser via a bank of delay lines to form a composite transmit data packet aligned in time;
buffering the composite transmit data packet in a transmit switch;
transmitting the composite transmit data packet onto the ring network via an optical switch;
receiving a receive data packet via the optical switch;
buffering the receive data packet in a receive switch; and
unstacking the receive data packet.
6. The method of claim 5, further including setting the optical switch and the transmit switch to a cross state to put the composite transmit data packet on the ring network.
7. The method of claim 5, further including setting the optical switch and the receive switch to a cross state to obtain the receive data packet from the ring network.