1. A method of forming a semiconductor device comprising:
forming a gate structure on a semiconductor substrate, wherein a first source region and a first drain region are on opposing sides of the gate structure;
forming a first spacer in direct contact with sidewalls of the gate structure having a first width that exposes a portion of the first source region and the first drain region;
forming a second spacer on the sidewalls of the gate structure, wherein the second spacer has a second width that is less than the first width and covers the entire length of the first source region and the first drain region; and
forming a second source region and a second drain region on the exposed portion of the first source region and the first drain region, the second source region and the second drain region have an upper surface that is raised relative to the channel region of the semiconductor substrate.
2. The method of claim 1, wherein the first source region is a source extension region, the first drain region is a drain extension region, the second source region is a raised source region, the second source region is a raised source region, and the second drain region is a raised drain region.
3. The method of claim 2, wherein the forming of the gate structure comprises a replacement gate structure.
4. The method of claim 3, further comprising:
forming the first spacer in direct contact with sidewalls of the replacement gate structure; implanting the source extension region and the drain extension region in the semiconductor substrate;
forming a sacrificial spacer in direct contact with sidewalls of the first spacer;
implanting a deep source region and a deep drain region in the semiconductor substrate; removing the sacrificial spacer after forming the deep source region and the drain extension region; and
forming a second spacer in direct contact with sidewalls of the first spacer.
5. The method of claim 4, wherein the forming of the second spacer comprises:
depositing a conformal dielectric layer over the first spacer; and
removing at least a portion of the conformal dielectric layer that is overlying the semiconductor substrate that includes the source extension region, drain extension region, deep source region, and deep drain regions, wherein a remaining portion of the conformal dielectric layer provides the second spacer.
6. The method of claim 5, wherein the removing of said at least the portion of the conformal dielectric layer comprises forming an etch mask protecting a second spacer portion of the conformal dielectric layer, and etching an exposed portion of the conformal dielectric layer selective to at least the etch mask.
7. The method of claim 6, wherein the etching to remove the portion of the conformal dielectric layer comprises an anisotropic etch that is selective to at least the etch mask and the first spacer.
8. The method of claim 7, wherein the second spacer is present in direct contact with the middle portion of the first spacer.
9. The method of claim 2, wherein the forming of the raised source region and the raised drain region on the source extension region and the drain extension region includes forming the raised source region and the raised drain region in direct contact with a portion of the source extension region and the drain extension region that is exposed by removing the portion of the conformal dielectric layer.
10. The method of claim 3, further comprising removing the replacement gate structure after forming the raised source region and the raised drain region, and forming a functional gate structure on an exposed portion of the semiconductor substrate that is between the source extension region and the drain extension region.
11. The method of claim 10, further comprising forming an interlevel dielectric layer over the functional gate structure, the raised source region and the raised drain region, and forming interconnects to the raised source region and the raised drain region through the interlevel dielectric layer.
12. A method of forming a semiconductor device comprising:
forming a replacement gate structure on a semiconductor substrate, wherein a first source region and a first drain region are on opposing sides of the gate structure;
forming a first spacer on the sidewalls of the replacement gate structure, wherein the first spacer has a first width that provides an exposed portion of the first source region and the first drain region;
forming a second spacer on the sidewalls of the gate structure, wherein the second spacer has a second width that is less than the first width and covers the entire length of the first source region and the first drain region;
forming a second source region and a second drain region on the exposed portion of the first source region and the first drain region, the second source region and the second drain region have an upper surface that is raised relative to the channel region of the semiconductor substrate; and
replacing the replacement gate structure with a functional gate structure.
13. The method of claim 12, wherein the first source region is a source extension region, the first drain region is a drain extension region, the second source region is a raised source region, the second source region is a raised source region, and the second drain region is a raised drain region.
14. The method of claim 13, wherein the first source region is a source extension region, the first drain region is a drain extension region, the second source region is a raised source region, the second source region is a raised source region and the second drain region is a raised drain region.
15. The method of claim 14, wherein the forming of the second spacer comprises:
depositing a conformal dielectric layer over the first spacer; and
removing at least a portion of the conformal dielectric layer that is overlying the semiconductor substrate that includes the source extension region, drain extension region, deep source region, and deep drain regions, wherein a remaining portion of the conformal dielectric layer provides the second spacer.
16. The method of claim 15, wherein the removing of said at least the portion of the conformal dielectric layer comprises forming an etch mask protecting a second spacer portion of the conformal dielectric layer, and etching an exposed portion of the conformal dielectric layer selective to at least the etch mask.
17. The method of claim 12, further comprising forming an interlevel dielectric layer over the functional gate structure, the raised source region and the raised drain region, and forming interconnects to the raised source region and the raised drain region through the interlevel dielectric layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A data library adapted to be attached to a storage area network, said library comprising:
a plurality of partitions;
at least one data transfer element assigned to one of said partitions and assigned an internally unique element address;
a plurality of data storage element slots, each of said slots assigned to a partition and assigned an internally unique element address;
at least one media transport element shared by said partitions to move media between said slots and said at least one data transfer elements, said transport assigned an internally unique element address; and
a library controller that assigns a different logical unit designation to each of said partitions and that assigns external element addresses to said at least one transport element, said at least one data transfer element, and said slots for each of said partitions and maps said internally unique addresses to said external addresses, said controller restricting movement of media to and from said slots assigned to a same of said partitions.
2. The library of claim 1 wherein said library controller restricts movement of said media to and from said at least one data transfer elements, said slots assigned to a same partition and said at least one data transfer elements assigned to a same of said partitions.
3. The library of claim 1 wherein each of said partitions comprise at least one of said data transfer elements and at least one of said slots corresponding to as an existing data library model of a plurality of existing library models.
4. The library of claim 3 wherein said controller identifies each of said partitions to a user as said corresponding existing data library model.
5. The library of claim 3 wherein said controller responds to an inquiry command by providing at least one response of a group of responses consisting of: a vendor of said corresponding existing data library model, a product identification for said corresponding existing data library model, and a product revision level of said corresponding existing data library model.
6. The system of claim 1 wherein at least one of said slots in at least one of said partitions is defined as an importexport slot.
7. The library of claim 1 wherein said controller employs said internally unique element address of said transport in response to a move medium command to carry out said command.
8. The library of claim 1 wherein said external element addresses for each partition begin with a same element number.
9. The library of claim 1 wherein said controller identifies a user of said storage area network by which logical unit designation said user addresses.
10. A method for partitioning a data library adapted to be attached to a storage area network, said method comprising:
assigning a different logical unit designation to each of a plurality of library partitions;
numbering at least one media transport, a plurality of data transfer elements and a plurality of storage element slots with a set of unique internal element numbers, each said slots adapted to store media, each of said data transfer elements adapted to receive said media and transfer data to and from said media and said at least one transport adapted to move said media between said slots and said data transfer elements;
establishing said partitions in said data library, each of said partitions comprising at least one of said slots, at least one of said data transfer elements and at least one of said at least one transports;
renumbering said transport, slots and data transfer elements in each of said partitions with externally presented element numbers starting from a same externally presented element number for each partition;
mapping said externally presented element numbers for each of said partitions to said internal element numbers; and
controlling movement of said media to and from said slots assigned to a same partition.
11. The method of claim 10 wherein said controlling comprises controlling movement of said media to and from said data transfer elements assigned to a same partition, wherein said slots assigned to a same partition and said data transfer elements assigned to a same partition are assigned to a same partition.
12. The method of claim 10 further comprising:
employing said internal element address of said transport in response to a move medium command.
13. The method of claim 10 further comprising:
defining at least one of said slots as an importexport slot.
14. The method of claim 10 further comprising:
identifying a user of said storage area network by which logical unit designation said user addresses.
15. The method of claim 10 wherein said establishing includes establishing each of said partitions with a number of said slots and a number of said data transfer elements corresponding to an existing data library model.
16. The method of claim 15 further comprising:
identifying each of said partitions to a user as said corresponding existing data library model.
17. The method of claim 10 further comprising:
responding to an inquiry command by providing at least one response of a group of responses consisting of: a vendor of an existing data library model, a product identification for an existing data library model, and a product revision level of an existing data library model.
18. A partitioned storage area network with an attached data library, said network comprising:
a data storage array that is divided into a plurality of partitions; and
a library management interface that accepts user input partitioning said library and assigns a logical unit number to library partitions, said library comprising:
a plurality of data transfer elements, each of said data transfer elements assigned to one of said partitions and assigned an internally unique element address;
a plurality of data storage element slots, each of said slots assigned to one of said partitions and assigned an internally unique element address;
at least one media transport element, said at least one media transport element shared by said partitions to move media between said slots and said data transfer elements, said transport assigned an internally unique element address; and
a library controller that assigns external element addresses to said transport, data transfer elements, and slots for each of said partitions and maps said internal addresses to said external addresses for each of said partitions, said controller restricting movement of media between said slots, data transfer elements assigned to a same one of said partitions.
19. The network of claim 18 wherein each of said partitions comprise a number of said data transfer elements and a number of said slots corresponding to as an existing data library model of a plurality of existing library models.
20. The network of claim 19 wherein said controller identifies each of said partitions to a user as said corresponding existing data library model.
21. The network of claim 18 wherein said controller responds to an inquiry command by providing at least one response of a group of responses consisting of: a vendor of an existing data library model, a product identification for an existing data library model, and a product revision level of an existing data library model.
22. The network of claim 18 wherein said external element addresses for each partition begins with a same element address.
23. The network of claim 18 wherein at least one of said slots in at least one of said partitions is defined as an importexport slot.
24. The network of claim 18 wherein said controller identifies a network user by which logical unit number it addresses.