Author: claimsbot

1. Bicycle lock for blocking rotation of the crankshaft of a bicycle, the bicycle lock being provided at the bottom in a saddle tube of the bicycle close to the crankshaft, the bicycle lock comprising
a lock housing accommodating a locking pin and a locking mechanism, the locking mechanism being adapted to be operated by a key to be inserted through a hole in the saddle tube, the locking mechanism being adapted to fix the locking pin in either of two positions, wherein the locking pin in an upper position thereof releases the crankshaft and in a lower position thereof blocks the crankshaft, an end of the locking pin in the lower position thereof engaging a matching notch in the crankshaft,
the lock housing being coupled to the saddle tube by a rotating coupling, the locking pin in the lower position thereof having a nonrotable engagement with said matching notch, thus blocking rotation of the lock housing and preventing it from being removed from the saddle tube.
2. Bicycle lock according to claim 1, wherein the A rotary coupling is a threaded connection.
3. Bicycle lock according to claim 1, wherein the rotary coupling is a bayonet connection.
4. Bicycle lock according to claim 1, wherein the lock housing is fitted in the saddle tube by means of a V-groove connection.
5. Bicycle lock according to claim 1, wherein the locking pin has an eccentric position in the lock housing.
6. Bicycle lock according to claim 5, wherein the lower end of the locking pin is cylinder-shaped and catches in a cylinder-shaped notch in the crankshaft.
7. Bicycle lock according to claim 1, wherein the section of the lower end of the locking pin is trapezium-shaped.
8. Bicycle lock according to claim 1, wherein the section of the lower end of the locking pin is rectangular.
9. Bicycle lock according to claim 8, wherein the section of the lower end of the locking pin is square.
10. Bicycle lock according to claim 1, wherein the section of the lower end of the locking pin is hexagonal.
11. Bicycle lock according to claim 1, wherein the locking pin comprises two parts which are coupled to each other through a spring element.
12. Bicycle lock according to claim 1, wherein the lock mechanism is a cross lock.
13. Bicycle lock according to claim 1, wherein the lock mechanism is a cylinder lock.
14. Bicycle lock according to claim 1, wherein the bicycle lock also includes a catch system for fitting a cable bicycle lock.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of depositing an organic coating on a substrate from a vapor phase organic-comprising precursor, wherein said substrate surface upon which said organic coating is applied is a halogenated surface produced by treatment of said substrate with a vaporous, halogen-containing compound in a process chamber under vacuum conditions ranging from about 1 mTorr to about 10 Torr, at a temperature ranging from about 25\xb0 C. to about 100\xb0 C., wherein said organic-comprising precursor contains at least one nucleophilic functional group which reacts with said halogenated surface to attach an organic coating to said surface, and wherein said organic-comprising precursor is charged to said processing chamber in measured quantities using batch-like charging procedures, whereby a particularly uniform growth of the coating on the surface is achieved.
2. A method in accordance with claim 1, wherein a density of reactive halogen sites on said halogenated surface is controlled by controlling an amount of said vaporous halogen-containing compound contacted with said substrate surface in said process chamber under vacuum conditions.
3. (canceled)
4. A method in accordance with claim 1, wherein process chamber pressure ranges from about 10 mTorr to about 1 Torr.
5. A method in accordance with claim 1 or claim 2, wherein said vaporous halogen-containing compound contains chlorine.
6. A method in accordance with claim 1 or claim 2, wherein said vaporous halogen-containing compound is selected from the group consisting of chlorosilanes, chlorosiloxanes, fluorosilanes, fluorosiloxanes and combinations thereof.
7. A method in accordance with claim 6, wherein said halogen-containing compound is a chlorine-containing compound.
8. A method in accordance with claim 1 or claim 2, wherein water is added to said processing chamber for use in combination with said halogen-containing compound, to provide said halogenated surface.
9. A method in accordance with claim 8, wherein an amount of water added to said processing chamber is used to control a density of said reactive halogen-containing sites on said halogenated surface.
10. A method in accordance with claim 1, wherein said treatment of said surface with said halogen-containing compound is carried out using a plurality of treatment cycles, and wherein each cycle includes batch-like charging of a nominal amount of said halogen-containing compound, and reaction of said halogen containing compound with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.
11. A method in accordance with claim 8, wherein said treatment of said surface with said halogen-containing compound and water is carried out using a plurality of treatment cycles, and wherein each cycle includes batch-like charging of a nominal amount of said halogen-containing compound, batch-like charging of a nominal amount of said water, and reaction of said halogen containing compound and said water with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.
12. A method in accordance with claim 8, wherein said halogen-containing compound is SiCl4, and wherein a ratio of water vapor partial pressure to SiCl4 vapor pressure in a process chamber in which the substrate surface is treated is less than 1:4.
13. A method in accordance with claim 1, wherein a total pressure in said process chamber in which said vaporous halogen-containing compound treatment is carried out is in the range of about 1 Torr to about 3 Torr.
14. (canceled)
15. A method in accordance with claim 1, wherein said temperature ranges from about 25\xb0 C. to about 60\xb0 C.
16. A method in accordance with claim 1 or claim 2, wherein said organic-comprising precursor is selected from the group consisting of organic compounds having the formula RNH2 or ROH; organic compounds including \u2550NH, \u2014SH, \u2014SeH, \u2014TeH and \u2014PH2 functional groups; alkyl-lithium compounds, RLi; Alkyl-Grignard reagents, RMgX; and Gilman reagents, R\u2014{2}CuLi; wherein R is an organic radical.
17. A method in accordance with claim 1 or claim 2, wherein subsequent to halogenation of said substrate surface and prior to reaction of said halogenated substrate surface with said organic-comprising compound, said halogenated substrate surface is isolated from contact with moisture and other contaminants which affect the reaction product of said halogenated substrate surface with said organic-comprising compound.
18. A method in accordance with claim 17, wherein said isolation is achieved by carrying out said halogenation of said substrate surface and said subsequent reaction of said halogenated surface with said organic-comprising compound in the same process chamber without removing said substrate from said process chamber.
19. A method of attaching an organic coating to a surface of a substrate at a controlled density upon said substrate, comprising:
a) treatment of said substrate with a vaporous, halogen-containing compound which is charged to a processing chamber in precisely measured quantities using batch-like charging procedures, wherein said substrate is at a temperature ranging from about 25\xb0 C. to about 100\xb0 C. and said processing chamber is at a pressure ranging from about 1 Torr to about 5 Torr, whereby halogen species are attached to a surface of said substrate; and
b) reacting a vapor phase organic-comprising precursor containing at least one nucleophilic functional group with said attached halogen species in said processing chamber, wherein said substrate is at a temperature ranging from about 25\xb0 C. to about 100\xb0 C. and said processing chamber is at a pressure ranging from about 0.1 Torr to about 10 Torr.
20. A method in accordance with claim 19, wherein said reacting is by covalent bonding.
21. A method in accordance with claim 19, wherein said controlled density of said organic coating is controlled by a density of said halogen species attached to said substrate surface, and wherein a density of attachment of said halogen species is controlled by an amount of a vaporous halogen-containing compound which is contacted with said substrate surface in said process chamber under vacuum conditions.
22. A method in accordance with claim 21, wherein the density of attachment of said halogen species is also controlled by an amount of water added to said processing chamber either prior to or during attachment of said halogen species.
23. A method in accordance with claim 21, wherein said treatment of said surface with said halogen-containing compound is carried out using a plurality of treatment cycles, and wherein each cycle includes said batch-like charging of a nominal amount of said halogen-containing compound, and reaction of said halogen containing compound with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof.
24. A method in accordance with claim 22, wherein said treatment of said surface with said halogen-containing compound and water is carried out using a plurality of treatment cycles, and wherein each cycle includes: said batch-like charging of a nominal amount of said halogen-containing compound and batch-like charging of a nominal amount of said water, and reaction of said halogen containing compound and water with said substrate, followed by a pump down of said process chamber to remove halogenation process byproducts, halogen-containing compound residue, or combinations thereof
25. A method in accordance with claim 24, wherein said halogen-containing compound is SiCl4, and wherein a ratio of water vapor partial pressure to SiCl4 vapor pressure is less than 1:4.
26. A method in accordance with claim 1, wherein said halogen-containing compound is selected from the group consisting of SiCl4, Si2OCl6, SnCl2, PCl5, SOCl2, and combinations thereof.

1. A method of forming a semiconductor device, comprising:
forming an interlayer dielectric on a substrate;
forming a mold layer on the interlayer dielectric;
forming a guide opening that penetrates the mold layer;
forming a di-block polymer layer in the guide opening, the di-block polymer layer comprising a plurality of first polymer blocks and a plurality of second polymer blocks;
dividing the di-block polymer layer into a first phase to which the first polymer blocks are bound and a second phase to which the second polymer blocks are bound;
removing the second phase so that at least part of the first phase remains in place, wherein the remaining first phase defines at least part of a pore in the guide opening;
etching the interlayer dielectric exposed beneath the pore to form an opening;
removing the remaining the first phase;
forming a conductive layer on the mold layer and in the opening; and
planarizing the conductive layer and the mold layer to expose the interlaver dielectric and to form an electrode in the opening.
2. The method as set forth in claim 1, wherein the remaining first phase forms a polymer spacer on a sidewall of the guide opening.
3. The method as set forth in claim 1, wherein the mold layer has a thickness ranging from about 5 to about 10 nanometers.
4. The method as set forth in claim 1, further comprising:
forming a phase change material pattern on the electrode.
5. The method as set forth in claim 1, wherein the electrode is generally pillar-shaped or annular-shaped.
6. The method as set forth in claim 1, wherein the di-block polymer is divided into the first phase and the second phase by annealing the di-block polymer layer.
7. The method as set forth in claim 1, wherein the second phase is removed by performing a developing process on the di-block polymer using a developer, wherein a first solubility of the first polymer block to the developer is lower than a second solubility of the second polymer block to the developer.
8. The method as set forth in claim 7, further comprising irradiating a light onto the di-block polymer layer that has been divided into the first phase and the second phase before performing the developing process, wherein a first reaction sensitivity of the first polymer block to the light is different than a second reaction sensitivity of the second polymer block to the light.
9. The method as set forth in claim 8, wherein the light is ultraviolet (UV) light.
10. The method as set forth in claim 7, wherein the developer is one selected from the group consisting of acetic acid, ketone-containing solution, alcohol-containing solution, and aldehyde-containing solution.
11. The method as set forth in claim 7, wherein the di-block polymer layer is made of one selected from the group consisting of polybutadiene-polybutylmethacrylate, polybutadiene-polydimethylsiloxane, polybutadiene-polymethylmethacrylate, polybutadiene-polyvinylpyridine, polyisoprene-polymethylmethacrylate, polyisoprene-polyvinylpyridine, polybutylacrylate-polymethylmethacrylate, polybutylacrylate-polyvinylpyridine, polyhexylacrylate-polyvinylpyridine, polyisobutylene-polybutylmethacrylate, polyisobutylene-polydimethoxysiloxane, polyisobutylene-polymethylmethacrylate, polyisobutylene-polyvinylpyridine, polybutylmethacrylate-polybutylacrylate, polybutylmethacrylate-polyvinylpyridine, polyethylene-polymethylmethacrylate, polymethylmethacrylate-polybutylacrylate, polymethylmethacrylate-polybutylmethacrylate, polystyrene-polybutadiene, polystyrene-polybutylacrylate, polystyrene-polybutylmethacrylate, polystyrene-polybutylstyrene, polystyrene-polydimethoxysiloxane, polystyrene-polyisoprene, polystyrene-polyvinylpyridine, polyethylene-polyvinylpyridine, polyvinylpyridine-polymethylmethacrylate, polyethyleneoxide-polyisoprene, polyethyleneoxide-polybutadiene, polyethyleneoxide-polystyrene, and polyethyleneoxide-polymethylmethacrylate.
12. The method as set forth in claim 1, further comprising forming a surface polymer layer on the substrate including the guide opening before forming the di-block polymer layer.
13. The method as set forth in claim 12, wherein the surface polymer layer is made of a polymer in which first monomers and second monomers are arranged at random, wherein the first monomers constitute a first polymer in the first polymer block and the second monomers constitute a second polymer in the second polymer block.
14. The method as set forth in claim 12, wherein the surface polymer layer is formed by a spin coating method, a dipping method, or an evaporation method.
15. The method as set forth in claim 1, wherein the overall composition of the di-block polymer layer comprises about 20 to about 70 percent by weight of the second polymer blocks.
16. The method as set forth in claim 1, wherein the di-block polymer layer is formed by a spin coating method.
17. The method as set forth in claim 1, wherein sizes of the first polymer blocks and sizes of the second polymer blocks are random.
18. The method as set forth in claim 1, wherein the pore is generally circular, oval rectangular or square when viewed from above.
19. A method of forming a semiconductor device, comprising:
forming an interlayer dielectric on a substrate;
forming a second layer on the interlayer dielectric, wherein the second layer has a first opening that exposes a portion of the interlayer dielectric;
forming a di-block polymer layer in the first opening;
removing a central portion of the di-block polymer layer to form a second opening;
etching the interlayer dielectric beneath the second opening to form a third opening in the interlayer dielectric;
removing a remainder of the di-block polymer layer;
forming a conductive layer in the third opening and on the second layer;
planarizing the conductive layer and the second layer to expose the interlayer dielectric and to form a heater electrode in the third opening in the interlayer dielectric; and
forming a phase change material pattern on the heater electrode.
20. The method as set forth in claim 19, wherein the di-block polymer layer includes a plurality of first polymer blocks formed of first polymers and a plurality of second polymer blocks formed of second polymers, and wherein the method further comprises dividing the di-block polymer layer into a first phase to which the plurality of first polymer blocks are bound and a second phase to which the plurality of second polymer blocks are bound before the central portion of the di-block polymer layer is removed, wherein the second phase is in the central portion of the di-block polymer layer.
21. The method as set forth in claim 19, further comprising annealing the di-block polymer layer prior to removing the central portion of the di-block polymer layer.
22. The method as set forth in claim 20, wherein the central portion of the di-block polymer layer is removed by performing a developing process on the di-block polymer using a developer, wherein a solubility of the first polymer to the developer is lower than the solubility of the second polymer to the developer.
23. The method as set forth in claim 20, further comprising irradiating a light onto the di-block polymer layer that has been divided into the first phase and the second phase before performing the developing process, wherein a reaction sensitivity of the first polymer to the light is different than the reaction sensitivity of the second polymer to the light.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A domestic appliance comprising:
a cabinet having a bottom end;
a platform assembly for supporting the cabinet in an elevated, substantially stationary position during use of the appliance, said platform assembly including a plurality of frame members which define a supporting surface upon which the cabinet is positioned, a plurality of upstanding leg members having upper end portions secured to the plurality of frame members and lower end portions, and a plurality of roller members, each of the plurality of roller members being vertically, adjustably attached to a respective one of the lower end portions of the plurality of upstanding leg members;
fastening means for fastening the bottom end of the cabinet to the platform assembly thereby fixing the cabinet upon the supporting surface in a raised condition; and
a decorative faceplate secured across a front portion of said platform assembly.
2. The domestic appliance according to claim 1, wherein the plurality of frame members constitute tubular members extending between the upper end portions of respective ones of said plurality of leg members, said platform assembly further including a cross frame member extending between two of the plurality of frame members.
3. The domestic appliance according to claim 1, wherein each one of said plurality of roller members constitutes a caster.
4. The domestic appliance according to claim 3, wherein each caster includes a threaded mounting stud, a support cup member and a roller ball.
5. The domestic appliance according to claim 1, wherein said decorative faceplate includes a front face portion extending across a front of the platform assembly, and side wall portions extending along side portions of the platform assembly.
6. The domestic appliance according to claim 5, wherein the front face portion of said decorative faceplate includes various vents.
7. The domestic appliance according to claim 1, wherein the appliance constitutes a refrigerator.
8. The domestic appliance according to claim 7, wherein the refrigerator constitutes a bottom mount style refrigerator.
9. A domestic appliance comprising:
a cabinet having a bottom end, wherein the bottom end of the cabinet is formed with a plurality of holes;
a platform assembly for supporting the cabinet in an elevated position, said platform assembly including a plurality of frame members which define a supporting surface upon which the cabinet is positioned,

a plurality of upstanding leg members having upper end portions which are secured to the plurality of frame members and lower end portions, and a plurality of roller members, each of the plurality of roller members being vertically, adjustably attached to a respective one of the lower end portions of the plurality of upstanding leg members;
means for fastening the bottom end of the cabinet to the platform assembly thereby fixing the cabinet upon the supporting surface in a raised condition, said fastening means including a plurality of fasteners extending through the plurality of holes and being secured to the platform assembly; and
a decorative faceplate secured across a front portion of said platform assembly.
10. The domestic appliance according to claim 9, wherein the bottom end of the cabinet includes a plurality of spaced brackets, each one of the plurality of holes being formed in a respective one of the plurality of brackets.
11. The domestic appliance according to claim 9, wherein the plurality of fasteners extend through the plurality of holes and are threadably secured to the platform assembly.
12. The domestic appliance according to claim 11, wherein the upper end portion of each of the plurality of leg members includes an upper end plate provided with a threaded aperture which receives a respective one of the plurality of fasteners.
13. The domestic appliance according to claim 12, wherein the lower end portion of each of the plurality of leg members includes a lower end plate provided with a threaded opening which adjustably, threadably receives a respective one of the plurality of roller members.
14. A method of raising and supporting a cabinet of a domestic appliance comprising:
detaching any leg leveling elements from leg leveling support structure provided on a bottom end of the cabinet;
positioning the bottom end of the cabinet of the domestic appliance upon a plurality of frame members supported by a plurality of leg members of an overall platform assembly;
fastening the cabinet upon the platform assembly through the leg leveling support structure; and
positioning a front faceplate across the platform assembly.
15. The method of claim 14, further comprising: securing the domestic appliance upon the platform assembly with a plurality of fasteners extending through the leg leveling support structure on the bottom end of the cabinet and into the platform assembly.
16. The method of claim 15, wherein leg leveling support structure provided on the bottom end of the cabinet is defined by a plurality of brackets including openings, said domestic appliance being fastened upon the platform assembly with the plurality of fasteners extending through the openings and being threaded into the platform assembly.
17. The method of claim 15, further comprising: altering a height of the platform assembly by vertically adjusting casters attached to the plurality of leg members supporting the platform assembly.
18. The method of claim 17, further comprising: securing the plurality of fasteners to upper end plates of the plurality of leg members and attaching the casters to lower end plates of the plurality of leg members.
19. The method of claim 14, further comprising: extending the decorative faceplate across both a front portion and side portions of the platform assembly.
20. The method of claim 19, further comprising: venting below the domestic appliance through the decorative faceplate.