Author: claimsbot

We claim:

1. A method for making a local interconnect structure for an integrated circuit comprising:
providing a semiconductor substrate;
forming a Ti layer having a nitrogen-rich upper portion, the Ti layer overlying a portion of the semiconductor substrate;
forming a refractory metal layer on the Ti layer;
forming a Si layer on the refractory metal layer;
removing a portion of the Si layer; and
heating to form the local interconnect structure.
2. The method of claim 1, wherein the semiconductor substrate is a silicon substrate.
3. The method of claim 2, wherein the Ti layer is formed over active areas in the silicon substrate.
4. The method of claim 1, wherein the nitrogen-rich region extends along an upper surface of the Ti layer.
5. The method of claim 1, wherein the lower portion of the Ti layer contains substantially no nitrogen.
6. The method of claim 1, including forming the Ti layer by sputter depositing Ti in an atmosphere comprising nitrogen.
7. The method of claim 1, including forming the Ti layer by depositing Ti and then rapid thermal annealing in an atmosphere comprising nitrogen.
8. The method of claim 1, including forming the Ti layer by depositing Ti and then implanting nitrogen ions into the upper portion of the Ti.
9. The method of claim 1, wherein the thickness of the nitrogen-rich upper-portion ranges from about 50 to about 100 .
10. The method of claim 1, wherein the thickness of the Ti layer ranges from about 100 to about 300 .
11. The method of claim 1, wherein the concentration of nitrogen in the nitrogen-rich upper-portion ranges from about 2% to about 15%.
12. The method of claim 7, further comprising performing the rapid thermal annealing at about 400 C. to about 600 C. for about 15 to about 90 seconds.
13. The method of claim 1, wherein the refractory metal layer comprises Co or Ti.
14. The method of claim 13, wherein the refractory metal comprises Ti.
15. The method of claim 1, further comprising forming the refractory metal layer by vapor deposition or sputter deposition.
16. The method of claim 15, further comprising sputtering the refractory metal layer.
17. The method of claim 1, wherein the thickness of the refractory metal layer ranges from about 100 to about 300 .
18. The method of claim 1, wherein the thickness of the silicon layer ranges from about 400 to about 1000 .
19. The method of claim 1, wherein the Si layer is amorphous.
20. The method of claim 1, further comprising removing the portion of the Si layer by patterning and etching.
21. The method of claim 1, wherein the heating is a rapid thermal process.
22. The method of claim 1, including removing those portions of the Ti layer not underlying the local interconnect.
23. The method of claim 22, including removing the portions of the Ti layer using a wet etch solution.
24. The method of claim 23, wherein the wet etch solution comprises H2O, H2O2, and NH4OH.
25. A source structure for a local interconnect, comprising:
a semiconductor substrate;
a Ti layer having a nitrogen-rich upper portion, the Ti layer overlying a portion of the substrate;
a refractory metal layer overlying the Ti layer; and
a silicon layer overlying the refractory metal layer.
26. The structure of claim 25, wherein the semiconductor substrate is a silicon substrate.
27. The structure of claim 26, wherein the Ti layer is disposed over active areas in the silicon substrate.
28. The structure of claim 25, wherein the nitrogen-rich upper-portion extends along an upper surface of the Ti layer.
29. The structure of claim 25, wherein the lower portion of the Ti layer contains substantially no nitrogen.
30. The structure of claim 25, wherein the thickness of the nitrogen-rich upper-portion ranges from about 50 to about 100 .
31. The structure of claim 25, wherein the thickness of the Ti layer ranges from about 100 to about 300 .
32. The structure of claim 25, wherein the concentration of nitrogen in the nitrogen-rich upper-portion ranges from about 2% to about 15%.
33. The structure of claim 25, wherein the refractory metal layer comprises Co or Ti.
34. The structure of claim 33, wherein the refractory metal comprises Ti.
35. The structure of claim 25, wherein the thickness of the refractory metal layer ranges from about 100 to about 300 .
36. The structure of claim 25, wherein the thickness of the silicon layer ranges from about 400 to about 1000 .
37. A local interconnect structure, comprising:
a semiconductor substrate;
a titanium silicide layer disposed over a portion of the substrate;
a nitrogen-rich Ti layer disposed over the titanium silicide layer; and
a refractory-metal silicide layer disposed on the nitrogen-rich Ti layer.
38. The structure of claim 37, wherein the semiconductor substrate is a silicon substrate.
39. The structure of claim 38, wherein the titanium silicide layer is disposed over active areas in the silicon substrate.
40. The structure of claim 37, wherein the thickness of the nitrogen-rich Ti layer ranges from about 50 to about 100 .
41. The structure of claim 37, wherein the concentration of nitrogen in the nitrogen-rich Ti layer ranges from about 2% to about 15%.
42. The structure of claim 37, wherein the refractory metal layer comprises Co or Ti.
43. The structure of claim 42, wherein the refractory metal comprises Ti.
44. The structure of claim 37, wherein the thickness of the refractory-metal silicide layer ranges from about 300 to about 1000 .

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A hand-held setting tool comprising an actuation switch (13); connection means (16) for connecting the setting tool (10) to a positioning device (20) and having a counter-coupling element (18) for the positioning device (20); a structural component (33); and a mechanical switching link (30) including at least one first switching element (34) displaceable in the structural component (33) along a longitudinal axis (A) of the setting tool (10) for connecting an actuation element provided on the positioning device (20) with the actuation switch (13); and a safety device (50) for preventing actuation of the actuation switch (13) at an orientation other than a predetermined orientation of the setting tool (10) and including at least three separate channels (56), at least three blocking members (55a, 55b, 55c) displaceable in the at least three separate channels (56) respectively, and a recess (51) provided on the first switching element (34) for receiving the blocking members (55a, 55b, 55c) and which opens toward the structural component (33),
wherein the at least three channels (56) are inclined with respect to a plane (E) extending perpendicular to the longitudinal axis (A), and
wherein the at least three channels (56) intersect, in some regions, an axial projection of the first switching element (34) in the form of a secant and are open toward the first switching element (34) in respective overlapping regions (59).
2. A setting tool according to claim 1, wherein the at least three channels (56) are distributed about the longitudinal axis (A) rotationally symmetrically.
3. A setting tool according to claim 1, wherein the blocking members (55a, 55b, 55c) are pin-shaped.
4. A setting tool according to claim 1, wherein the first switching element (34) is rod-shaped and is displaceable in a guide channel formed in the structural component (33).
5. A setting tool according to claim 1, wherein the at least three channels (56) are inclined to the plane (E) each at an angle (\u03b1) between 20\xb0 and 50\xb0.
6. A setting tool according to claim 1, wherein the overlapping region (59) of each channel (56) with respect to the axial projection of the first switching element (34) on the longitudinal axis (A) has a depth (T) smaller than a diameter (D) of the channel (56).
7. A setting tool according to claim 1, wherein the recess (51) in the first switching element (34) is formed as an annular groove closed at opposite axial ends thereof.
8. A setting tool according to claim 1, wherein the recess (51) has walls (52) that limit the recess (51) in an axial direction and that are inclined to the longitudinal axis (A) so that an axial width of the recess (51) diminishes from a radially outer side to radially inner side.

1. A communications device comprising:
an antenna port;
transmitter circuitry configured to broadcast a radio frequency (RF) output signal across the antenna port; and
a controller configured to adjust a signal level of the RF output signal in accordance with antenna compensation information;
wherein the antenna port, the transmitter circuitry, and the controller are at least partially integrated on the same integrated circuit.
2. The communications device of claim 1 wherein the controller is configured to access the antenna compensation information within the communications device.
3. The communications device of claim 1 wherein the controller is configured to receive the antenna compensation information from a user.
4. The communications device of claim 1 wherein the controller is configured to adjust the signal level of the RF output signal according to a frequency of the RF output signal.
5. The communications device of claim 1 wherein the controller is configured to increase the signal level of the RF output signal for a first frequency of the RF output signal, and wherein the controller is configured to decrease the signal level of the RF output signal for a second frequency of the RF output signal that differs from a first frequency.
6. The communications device of claim 1 wherein the controller is configured to adjust the signal level of the RF output signal subsequent to completing a calibration mode of operation.
7. The communications device of claim 1 wherein the controller is configured to adjust tuning circuitry coupled to the antenna port during the calibration mode of operation.
8. The communications device of claim 1 wherein the transmitter includes output stage circuitry configured to generate the the RF output signal using an intermediate signal, and wherein the controller is configured to adjust the signal level of the RF output signal by providing a first control signal to the output stage circuitry.
9. The communications device of claim 8 wherein the output stage circuitry includes adjustable level circuitry coupled to a transconductance amplifier and configured to receive the control signal.
10. The communications device of claim 8 wherein the transmitter includes driver circuitry configured to generate the intermediate signal and provide the intermediate signal to the output stage circuitry, and wherein the controller is configured to adjust a signal level of the intermediate signal by providing a second control signal to the driver circuitry.
11. A method performed by a controller in a communication device with transmitter circuitry, the method comprising:
accessing antenna compensation information associated with an antenna coupled to an antenna port of the communications device; and
adjusting a signal level of a radio frequency (RF) output signal generated by the transmitter circuitry in accordance with antenna compensation information.
12. The method of claim 11 further comprising:
adjusting the signal level of the RF output signal by increasing the signal level.
13. The method of claim 11 further comprising:
adjusting the signal level of the RF output signal by decreasing the signal level.
14. The method of claim 11 further comprising:
adjusting the signal level of the RF output signal in accordance with a frequency of the RF output signal.
15. The method of claim 11 further comprising:
accessing the antenna compensation information within the communications device.
16. The method of claim 11 further comprising:
receiving the antenna compensation information from a user
17. The method of claim 11 further comprising:
adjusting the signal level of the RF output signal subsequent to completing a calibration mode of operation.
18. A communication device comprising:
an antenna port coupled to the antenna;
transmitter circuitry including adjustable level circuitry and configured to broadcast a radio frequency (RF) output signal across the antenna port; and
a controller configured to provide a first control signal to the adjustable level circuitry to cause a signal level of the RF output signal to be adjusted using antenna compensation information;
wherein the antenna port, the transmitter circuitry, and the controller are at least partially integrated on the same integrated circuit.
19. The communications device of claim 18 wherein the transmitter circuitry includes a transconductance amplifier, and wherein the adjustable level circuitry is coupled to the transconductance amplifier and is configured to receive the first control signal.
20. The communications device of claim 19 wherein the transmitter circuitry includes driver circuitry configured to generate an intermediate signal and provide the intermediate signal to the transconductance amplifier, and wherein controller is configured to provide a second control signal to the driver circuitry to cause the signal level of the intermediate signal to be adjusted.
21. The communications device of claim 20 wherein the driver circuitry includes RF conditioning circuitry, and wherein the RF conditioning circuitry is configured to receive the second control signal.
22. The communications device of claim 18 wherein the controller is configured to cause the signal level of the RF output signal to be adjusted according to a frequency of the RF output signal.
23. A communications system comprising:
an antenna;
a communications device including:
an antenna port coupled to the antenna;
transmitter circuitry configured to broadcast a radio frequency (RF) output signal across the antenna port; and
a controller configured to adjust a signal level of the RF output signal in accordance with antenna compensation information;
wherein the antenna port, the transmitter circuitry, and the controller are at least partially integrated on the same integrated circuit; and

an inputoutput system configured to communicate with the communications device.
24. The communications system of claim 23 wherein the controller is configured to access the antenna compensation information within the communications device.
25. The communications system of claim 23 wherein the communications device is configured to receive the antenna compensation information from a user.
26. The communications system of claim 23 wherein the controller is configured to adjust the signal level of the RF output signal according to a frequency of the RF output signal.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A passerretriever Device, comprising:
a continuous single shaft which is permanently joined at the radii end points having two ends, a distal tip end and a proximal finger pull end;
a first leg and second leg shaft connected in a U shape at the distal tip end and longitudinally parallel then outward expanding proximally and connected at permanently joined radii end points of the proximal end;
said first leg of the shaft extending from the proximal radius end, tapering through a central region to be substantially parallel with the second leg of the shaft mirrorly extending from the proximal radius end, tapering through the central region where the shafts are proximally closest within the Device and connect at the distal end;
said shaft legs longitudinally arc from the extreme distal end through central region and through the extreme proximal end.
2. The Device of claim 1, wherein the proximal region has a filled inner portion making the aperture a solid and the radius ends permanently joined.
3. The Device of claim 1, wherein the proximal radius ends are joined with a non-metallic tubular connection portion making the ends permanently joined.
4. The Device of claim 1, wherein the proximal radius ends are welded making the ends permanently joined.
5. The Device of claim 1, wherein the distal region is a U shape with a minimum inner radius value not less than the maximum diameter of the shaft.
6. The Device of claim 1, wherein the Device consist of a flexible shape memory metal.
7. The Device of claim 3 wherein the metal is nickel titanium.
8. The Device of claim 1 wherein the shafts are thinner at the distal end and thicker at the proximal end.
9. The Device of claim 1 wherein the shafts are permanently joined at the proximal radius ends by means of a thin walled metal tube.
10. The Device of claim 1 wherein the shafts are permanently joined at the proximal radius ends by means of a weld.
11. The Device of claim 1 wherein the shafts are permanently joined at the proximal radius ends by means of a metal overlay crimped in place.
12. The Device of claim 1 wherein the shafts are permanently joined at the proximal radius ends by means of injection molded, over-mold of a steam sterilization stable material.
13. The Device of claim 1 wherein the shafts are permanently arced lying proximal of the distal tip.
14. The Device of claim 1, wherein the Device consists of a hollow tubular shaped flexible shape memory metal.
15. The Device of claim 1, wherein the Device consist of solid wire of a flexible shape memory metal.
16. The Device of claim 1, wherein the Device consist of a stainless steel metal.
17. A method for retrieval of a severed flexor tendon in the hand comprising: a Device having a flexible tapered dual shaft, a distal U shape end with aperture, a joined proximal finger pull end and a permanently formed longitudinal arc extending from the extreme distal end to the extreme proximal end. Once the severed flexor tendon repair site has been prepped for the repair procedure, the Device is introduced and advanced into the sheath lumen by gripping the proximal finger pull end. Then beginning at the repair site the shaft portion lying between the finger pull portion and distal tip is introduced, tip first into the tendon sheath lumen through the repair site opening and advanced through the flexor tendon sheath lumen to the retracted free end of the severed tendon. With the distal tip of the Device positioned adjacent to the severed tendon end, the surgeon attaches a suture to the severed tendon end and then the suture is passed through the aperture in the distal tip of the Device and secured to the Device. By means of the finger pull the Device, suture, and then tendon end are pulledfeed through the sheath lumen back to the repair site where the Device is then released from the suture and removed, the tendon repair procedure is then completed.