Author: claimsbot

1. A mechanical seal, comprising:
biasing means;
at least one seal face under axial contact via said biasing means; and,
a thermally responsive element for reducing or negating face contact pressure upon said at least one seal face when heat is generated within said mechanical seal above a pre-determined temperature.
2. The mechanical seal according claim 1, wherein said biasing means is a spring biasing means.
3. The mechanical seal according to claim 1, wherein said thermally responsive element comprises a shape-memory material sensitive to thermal changes to increase or decrease in size when subjected to a change in temperature.
4. The mechanical seal according to claim 1, wherein said thermally responsive element comprises a shape-memory material sensitive to thermal changes for causing said shape-memory material to change shape.
5. The mechanical seal according to claim 1, wherein said thermally responsive element comprises a bimetal.
6. The mechanical seal according to claim 5, wherein said bimetal is nitinol.
7. The mechanical seal according to claim 1, wherein said pre-determined temperature correlates with a maximum operating temperature of contacting elastomers of said mechanical seal.
8. The mechanical seal according to claim 1, wherein said at least one seal face includes a floating seal face and a non-floating seal face with heat being generated via contact between said floating seal face and said non-floating seal face for initiating a response by said thermally responsive element.
9. The mechanical seal according to claim 1, wherein said thermally responsive element comprises a shape-memory material sensitive to thermal changes to increase or decrease in size, or to change shape, when subjected to a change in temperature of said mechanical seal for reducing or negating the face contact pressure and, upon cooling of said mechanical seal, said shape-memory material substantially reverts to its original size or original shape to increase the face contact pressure for retaining integrity of said mechanical seal.
10. A mechanical seal control apparatus, comprising:
a thermally responsive element for reducing or negating face contact pressure upon at least one seal face of a mechanical seal when heat is generated within the mechanical seal above a pre-determined temperature.
11. The mechanical seal control apparatus according to claim 10, wherein said thermally responsive element comprises a shape-memory material sensitive to thermal changes to increase or decrease in size when subjected to a change in temperature.
12. The mechanical seal control apparatus according to claim 10, wherein said thermally responsive element comprises a shape-memory material sensitive to thermal changes for causing said shape-memory material to change shape.
13. The mechanical seal control apparatus according to claim 10, wherein said thermally responsive element comprises a bimetal.
14. The mechanical seal control apparatus according to claim 13, wherein said bimetal is nitinol.
15. The mechanical seal control apparatus according to claim 10, wherein said thermally responsive element comprises a shape-memory material sensitive to thermal changes to increase or decrease in size, or to change shape, when subjected to a change in temperature of a mechanical seal for reducing or negating the face contact pressure and, upon cooling of the mechanical seal, said shape-memory material substantially reverts to its original size or original shape to increase the face contact pressure for retaining integrity of the mechanical seal.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A user interface comprising:
a substrate defining a fluid channel coupled to a cavity;
a tactile layer comprising a tactile surface, a deformable region cooperating with the substrate to define the cavity, and a first region coupled to the substrate proximal a perimeter of the cavity;
an elongated member extending from the substrate at a base of the cavity into the cavity toward the deformable region, the elongated member coupled to the substrate and resisting substantial deformation of the deformable region into the cavity;
a displacement device fluidly coupled to the fluid channel, the displacement device displacing fluid through the fluid channel, transitioning the deformable region from a retracted setting to an expanded setting, the deformable region in the expanded setting tactilely distinguishable from the deformable region in the retracted setting; and
a sensor coupled to the substrate and emitting an output signal corresponding to an input on the tactile surface at the deformable region.
2. The user interface of claim 1, wherein the elongated member comprises a substantially columnar protrusion extending from the substrate at the base of the cavity toward the deformable region, the columnar protrusion substantially continuous with the substrate, a free end of the columnar protrusion distal the base of the cavity and resisting deformation of the deformable region into the cavity passed flush with the tactile surface at the first region.
3. The user interface of claim 1, wherein the cavity and the elongated member are cylindrical in cross section, and wherein the elongated member is undersized in the cavity.
4. The user interface of claim 1, wherein the elongated member comprises a material of a refractive index substantially similar to a refractive index of fluid in the cavity.
5. The user interface of claim 1, wherein, in the retracted setting, the tactile surface at the deformable region is flush with the tactile surface at the first region and the deformable region is in contact with a free end of the elongated member, the free end distal the base of the cavity.
6. The user interface of claim 5, wherein, in the expanded setting, the deformable region is lifted off of the free end of the elongated member.
7. The user interface of claim 1, wherein the touch sensor comprises a capacitive touch sensor.
8. The user interface of claim 1, wherein the displacement device comprises a mechanical pump.
9. The user interface of claim 1, wherein the elongated member comprises a support member that cooperates with the substrate to define a fluid conduit, the fluid conduit communicating fluid from the fluid channel into a volume defined by the support member, the substrate, and the deformable region.
10. The user interface of claim 1 incorporated into an electronic device selected from the group consisting of: an automotive console, a desktop computer, a laptop computer, a tablet computer, a television, a radio, a desk phone, a mobile phone, a PDA, a personal navigation device, a personal media player, a camera, and a watch.
11. A user interface comprising:
a volume of a fluid;
a substrate;
a tactile layer comprising a tactile surface, a deformable region cooperating with the substrate to define a cavity, and a first region coupled to the substrate proximal a perimeter of the cavity;
an elongated member extending from the substrate at a base of the cavity into the cavity toward the deformable region, the elongated member coupled to the substrate and resisting substantial inward deformation of the deformable region into the cavity;
a displacement device fluidly coupled to a fluid channel, the displacement device displacing fluid through the fluid channel, transitioning the deformable region from a retracted setting to an expanded setting, the deformable region in the expanded setting tactilely distinguishable from the deformable region in the retracted setting; and
a sensor coupled to the substrate and emitting an output signal corresponding to an input on the tactile surface at the deformable region.
12. The user interface of claim 11, wherein the substrate defines a fluid channel communicating a portion of the volume of the fluid between the cavity and the displacement device, and wherein the displacement device comprises a pump displacing a portion of the volume of the fluid through the fluid channel to transition the deformable region from the retracted setting to the expanded setting.
13. The user interface of claim 12, wherein the elongated member and the cavity cooperate to define a gap between a wall of the cavity and the elongated member, wherein the gap defines a fluid path communicating fluid from the fluid channel to a back surface of the deformable region opposite the tactile surface.
14. The user interface of claim 11, further comprising a display coupled to the substrate and outputting an image of an input key substantially aligned with the deformable region.
15. The user interface of claim 14, wherein a portion of the volume of the fluid fills the cavity in the retracted setting and in the expanded setting, and wherein the volume of the fluid, the substrate, the tactile layer, and the elongated member are substantially transparent.
16. The user interface of claim 11, wherein, in the retracted setting, the deformable region rests on a surface of the elongated member, and wherein in the expanded setting, the deformable region is lifted off of the elongated member.
17. The user interface of claim 11, wherein the tactile surface is continuous across the deformable region and first region, and wherein, in the retracted setting, the tactile surface at the deformable region is flush with the tactile surface at the first region and the deformable region is in contact with a free end of the elongated member, the free end distal the base of the cavity.
18. The user interface of claim 11, wherein the elongated member comprises a porous polymer.
19. The user interface of claim 11, further comprising a reservoir coupled to the displacement device, the reservoir storing an excess volume of fluid.
20. The user interface of claim 11, wherein the tactile layer defines a second deformable region cooperating with the substrate to define a second cavity; wherein the displacement device is fluidly coupled to the second cavity and displaces fluid into the second cavity, selectively transitioning the second deformable region from a retracted setting to an expanded setting, the second deformable region in the expanded setting tactilely distinguishable from the second deformable region in the retracted setting.

1. A method of manufacturing a semiconductor device comprising:
forming an n-type semiconductor region and a p-type semiconductor region on a semiconductor substrate;
forming a first gate dielectric layer above the n-type semiconductor region and the p-type semiconductor region;
forming a second gate dielectric layer above the p-type semiconductor region, the second gate dielectric layer being made of an insulating material different from that of a the first gate dielectric layer; and
forming a gate electrode layer on the first gate dielectric layer and the second gate dielectric layer, such that a relation:
(XB\u2212XA)\xd7(dA+dB)\u22673.9

is satisfied by electronegativity (XA) and an atomic radius (dA, a unit thereof is \u212b) of a metal element constituting the gate electrode layer and by electronegativity (XB) and an atomic radius (dB) of an element having the highest binding energy to combine with the metal element constituting the gate electrode layer among elements constituting the portion of the first gate dielectric layer facing the gate electrode layer.
2. The method according to claim 1, further comprising:
removing the first gate dielectric layer on the p-type semiconductor region, after said forming a first gate dielectric layer and before said forming a second gate dielectric layer.
3. The method according to claim 2, further comprising:
forming a first gate electrode above the n-type semiconductor region and a second gate electrode above the p-type semiconductor region, by selectively etching the gate electrode layer.
4. The method according to claim 3, further comprising:
forming an insulating layer over the n-type semiconductor region and the p-type semiconductor region to bury the first gate electrode and the second gate electrode, after said forming the first gate electrode and the second gate electrode; and
flatly etching back the insulating layer to expose tops of the first gate electrode and the second gate electrode.
5. The method according to claim 1, wherein said forming a second gate dielectric layer above the p-type semiconductor region includes forming the second gate dielectric layer above the p-type semiconductor region with the first gate dielectric layer interposed therebetween.
6. The method according to claim 5, further comprising:
forming the first gate electrode above the n-type semiconductor region and the second gate electrode above the p-type semiconductor region, by selectively etching the gate electrode layer.
7. The method according to claim 6, further comprising:
forming an insulating layer over the n-type semiconductor region and the p-type semiconductor region to bury the first gate electrode and the second gate electrode, after said forming the first gate electrode and the second gate electrode; and
flatly etching back the insulating layer to expose tops of the first gate electrode and the second gate electrode.
8. The method according to claim 5, wherein said forming a second gate dielectric layer above the p-type semiconductor region includes forming the second gate dielectric layer so as to have a thickness of one or more mono layers and 2 nm or less.
9. The method according to claim 1, wherein said forming a gate electrode layer includes forming the gate electrode layer such that a relation:
(XC\u2212XA)\xd7(dA+dC)\u22660.7

is satisfied, wherein XC and dC (a unit thereof is \u212b) are electronegativity and an atomic radius of an element having the highest binding energy to combine with the metal element constituting the gate electrode layer among elements constituting the portion of the second dielectric above the p-type semiconductor region facing the gate electrode layer.
10. The method according to claim 9, wherein said forming a gate electrode layer includes forming the gate electrode layer using the metal element having the electronegativity of 1.78 or less.
11. The method according to claim 9, wherein said forming a gate electrode layer includes forming the gate electrode layer such that the gate electrode layer is made of a compound AmXn of a metal element A and another element X, and electronegativities XA and XX of the metal element A and the metal element X satisfy a relation:
\u03c7
A
m

\u2062

\u03c7
X
n
m
+
n
\u2264
1.78
12. A method of manufacturing a semiconductor device: comprising;
forming an n-type semiconductor region and a p-type semiconductor region (5) on a semiconductor substrate;
forming a first gate dielectric layer above the n-type semiconductor region and the p-type semiconductor region;
forming a second gate dielectric layer above the n-type semiconductor region, the second gate dielectric layer being made of an insulating material different from that of a the first gate dielectric layer; and
forming a gate electrode layer on the first gate dielectric layer and the second gate dielectric layer, after said forming a first gate dielectric layer and said forming a second gate dielectric layer, such that a relation:
(XB\u2212XA)\xd7(dA+dB)\u22673.9

is satisfied by electronegativity (XA) and an atomic radius (dA, a unit thereof is \u212b) of a metal element constituting the gate electrode layer and by electronegativity (XB) and an atomic radius (dB) of an element having the highest binding energy to combine with the metal element constituting the gate electrode layer among elements constituting the portion of the second gate dielectric layer facing the gate electrode layer.
13. The method according to claim 12, wherein said forming a second gate dielectric layer above the n-type semiconductor region includes forming the second gate dielectric layer above the n-type semiconductor layer with the first gate dielectric layer interposed therebetween.
14. The method according to claim 13, further comprising:
forming the first gate electrode above the n-type semiconductor region and the second gate electrode above the p-type semiconductor region, by selectively etching the gate electrode layer.
15. The method according to claim 14, further comprising:
forming an insulating layer over the n-type semiconductor region and the p-type semiconductor region to bury the first gate electrode and the second gate electrode, after said forming the first gate electrode and the second gate electrode; and
flatly etching back the insulating layer to expose tops of the first gate electrode and the second gate electrode.
16. The method according to claim 13, wherein said forming a second gate dielectric layer above the n-type semiconductor region includes forming the second gate dielectric layer so as to have a thickness of one or more mono layers and 2 nm or less.
17. The method according to claim 12, wherein said forming a gate electrode layer includes forming the gate electrode layer such that a relation:
(XC\u2212XA)\xd7(dA+dC)\u22660.7

is satisfied, wherein XC and dC (a unit thereof is \u212b) are electronegativity and an atomic radius of an element having the highest binding energy to combine with the metal element constituting the gate electrode layer among elements constituting the portion of the first dielectric above the p-type semiconductor region facing the gate electrode layer.
18. The method according to claim 12, wherein said forming a gate electrode layer includes forming the gate electrode layer using the metal element having the electronegativity of 1.78 or less.
19. The method according to claim 12, wherein said forming a gate electrode layer includes forming the gate electrode layer such that the gate electrode layer is made of a compound AmXn of a metal element A and another element X, and electronegativities XA and XX of the metal element A and the metal element X satisfy a relation:
\u03c7
A
m

\u2062

\u03c7
X
n
m
+
n
\u2264
1.78

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A composite material having utility in the manufacture of jewelry components, comprising:
a precious metal layer; and
a support layer formed from an age-hardenable non-precious metal-base alloy laminated to a first side of said precious metal layer.
2. The composite material of claim 1 wherein said precious metal layer is selected from the group consisting of gold, silver, platinum, 10 k and higher gold alloys, silver-base alloys containing at least 80%, by weight, silver and platinum-base alloys containing at least 50%, by weight, platinum.
3. The composite material of claim 2 wherein said precious metal layer is a 10 k or higher gold alloy.
4. The composite material of claim 2 wherein said support layer is an age-hardenable copper-base alloy.
5. The composite material of claim 4 wherein said support layer is a spinodal copper-base alloy.
6. The composite material of claim 5 wherein said support layer is a copper-base alloy containing from 3% to 30%, by weight, nickel and 2% -10%, by weight, tin.
7. The composite material of claim 6 wherein said support layer is a copper-base alloy containing from 6% to 10%, by weight, nickel and 3% to 7%, by weight, tin.
8. The composite material of claim 7 wherein said support layer is a copper-base alloy containing 7% to 8%, by weight, nickel and 4.5% to 5.5%, by weight, tin.
9. The composite material of claim 3 wherein said support layer is a copper-base alloy containing 7% to 8%, by weight, nickel and 4.5% to 5.5%, by weight, tin.
10. The composite material of claim 4 wherein a first solder layer is disposed between said precious metal layer and said support layer.
11. The composite material of claim 4 wherein said first solder layer is selected to lie a silver containing braze or solder.
12. The composite material of claim 10 wherein an intervening support layer and a second solder layer are disposed between said first solder layer and said support layer.
13. The composite material of claim 12 wherein said second solder layer is selected to be a silver containing braze or solder with a melting temperature less than the first solder layer.
14. The composite material of claim 4 further including a second precious metal layer bonded to an opposing second side of said support layer.
15. The composite material of claim 10 wherein a second precious metal layer is bonded to an opposing second side of said support layer by a third solder layer.
16. The composite material of claim 12 wherein a second precious metal layer is bonded to an opposing second side of said support layer by a third solder layer with an intervening support layer and a fourth solder layer interposed between said third solder layer and said support layer.
17. A method for the manufacture of a composite material having utility as a jewelry component, comprising the steps of:
a). bonding a precious metal layer to a first side an age hardenable non-precious metal support layer thereby forming said composite material; and
b). age hardening said composite material.
18. The method of claim 17 wherein said precious metal layer is selected from the group consisting of a gold alloy of 10 k or higher, a silver-base alloy containing at least 80% by weight of silver and platinum-base alloys containing at least 50% by weight platinum and said non-precious metal support layer is selected to be a copper-base spinodal alloy.
19. The method of claim 18 wherein prior to age-hardening said composite material, said composite material is annealed and formed into a desired shape.
20. The method of claim 19 wherein an annealing temperature is higher than an age hardening temperature.
21. The method of claim 20 wherein said annealing temperature is from 538 C. to 593 C. and said age hardening temperature is from 300 C. to 500 C.
22. A method for the manufacture of wire having utility in the manufacture of jewelry components, comprising the steps of:
a). forming a composite of a precious metal layer bonded to an intervening support layer;
b). forming said composite into a tubular configuration with a centrally disposed bore of diameter d, said intervening support layer forming sidewalls of said centrally disposed bore;
c). bonding a rod of age-hardenable material into said centrally disposed bore;
d). reducing the diameter to said composite and rod assembly to a desired diameter for said wire;
e). forming said wire into a desired jewelry component; and
f). age hardening said desired jewelry component.
23. The method of claim 22 wherein said precious metal layer is selected from the group consisting of a gold alloy of 10 k or higher, a silver-base alloy containing at least 80% by weight of silver and platinum-base alloys containing at least 50% by weight platinum and said non-precious metal support layer is selected to be a copper-base spinodal alloy.
24. The method of claim 23 wherein prior to age-hardening said composite material, said composite material is annealed and formed into a desired shape.
25. The method of claim 24 wherein an annealing temperature is higher than an age hardening temperature.
26. The method of claim 25 wherein said annealing temperature is from 538 C. to 593 C. and said age hardening temperature is from 300 C. to 500 C.
27. A method for the manufacture of wire having utility in the manufacture of jewelry components, comprising the steps of:
a). forming a precious metal cylinder having a central bore of diameter d;
b). bonding a rod of age-hardenable material into said central bore forming a composite;
c). reducing the diameter to said composite to a desired diameter for said wire;
d) forming said wire into a desired jewelry component; and
e). age hardening said desired jewelry component.
28. The method of claim 27 wherein said precious metal layer is selected from the group consisting of a gold alloy of 10 k or higher, a silver-base alloy containing at least 80% by weight of silver and platinum-base alloys containing at least 50% by weight platinum and said non-precious metal support layer is selected to be a copper-base spinodal alloy.
29. The method of claim 28 wherein prior to age-hardening said composite material, said composite material is annealed and formed into a desired shape.
30. The method of claim 29 wherein an annealing temperature is higher than an age. hardening temperature.
31. The method of claim 30 wherein said annealing temperature is from 538 C. to 593 C. and said age hardening temperature is from 300 C. to 500 C.