Author: claimsbot

What is claimed is:

1. A semiconductor device comprising:
(a) a semiconductor substrate;
(b) an insulating film formed at a surface of said semiconductor substrate for defining device regions in each of which a semiconductor device is to be fabricated;
(c) a gate electrode formed on said semiconductor substrate;
(d) a sidewall covering said gate electrode therewith; and
(e) drain and source diffusion layers formed at a surface of said semiconductor substrate around said gate electrode,
said sidewall having a sidewall offset extending outwardly of said gate electrode along a surface of said semiconductor substrate in at least one of regions below which said drain and source diffusion layers are to be formed,
at least one of said drain and source diffusion layers extending towards said gate electrode beyond an edge of said sidewall offset.
2. The semiconductor device as set forth in claim 1, wherein said sidewall offset is formed along a surface of said semiconductor substrate in both regions below which said drain and source diffusion layers are to be formed.
3. The semiconductor device as set forth in claim 1, further comprising second diffusion layers formed below said drain and source diffusion layers and surrounding said drain and source diffusion layers.
4. The semiconductor device as set forth in claim 3, wherein said second diffusion layers have a lower impurity-concentration than that of said drain and source diffusion layers.
5. The semiconductor device as set forth in claim 1, further comprising a memory cell formed on said semiconductor substrate.
6. A semiconductor device comprising:
(a) a semiconductor substrate;
(b) an insulating film formed at a surface of said semiconductor substrate for defining device regions in each of which a semiconductor device is to be fabricated;
(c) a gate electrode formed on said semiconductor substrate;
(d) a sidewall covering said gate electrode therewith;
(e) drain and source diffusion layers formed at a surface of said semiconductor substrate around said gate electrode; and
(f) low-resistive wiring layers formed at surfaces of said drain and source diffusion layers, said low-resistive wiring layers being located outwardly beyond a peripheral edge of said sidewall offset,
said sidewall having a sidewall offset extending outwardly of said gate electrode along a surface of said semiconductor substrate in at least one of regions below which said drain and source diffusion layers are to be formed,
at least one of said drain and source diffusion layers extending towards said gate electrode beyond an edge of said sidewall offset.
7. The semiconductor device as set forth in claim 6, wherein said low-resistive wiring layers are composed of TiSi.
8. The semiconductor device as set forth in claim 6, wherein said sidewall offset is formed along a surface of said semiconductor substrate in both regions below which said drain and source diffusion layers are to be formed.
9. The semiconductor device as set forth in claim 6, further comprising second diffusion layers formed below said drain and source diffusion layers and surrounding said drain and source diffusion layers.
10. The semiconductor device as set forth in claim 9, wherein said second diffusion layers have a lower impurity-concentration than that of said drain and source diffusion layers.
11. The semiconductor device as set forth in claim 6, further comprising a memory cell formed on said semiconductor substrate.
12. A method of fabricating a semiconductor device, comprising the steps of:
(a) forming an insulating film at a surface of a semiconductor substrate to thereby define device regions in which a semiconductor device is to be formed;
(b) forming a first well having a first electrical conductivity and a second well having a second electrical conductivity in a first region in which a first transistor is to be fabricated, and further forming a first well having a first electrical conductivity and a second well having a second electrical conductivity in a second region in which a second transistor is to be fabricated;
(c) forming a gate electrode of said first transistor in said first region and a gate electrode of said second transistor in said second region;
(d) forming first drain and source diffusion layers of said first and second transistors in both said first and second regions;
(e) forming a sidewall around said gate electrode of said first transistor, said sidewall having a sidewall offset having an edge remoter from said gate electrode than an edge of said first drain and source diffusion layers on at least one of said first drain and source diffusion layers, and forming a sidewall around said gate electrode of said second transistor; and
(f) forming second drain and source diffusion layers of said first transistor in both said first and second regions.
13. The method as sot forth in claim 12, further comprising the step of lowering a resistance of at least a portion of said second drain and source diffusion layers of said first transistor.
14. The method as set forth in claim 13, wherein said portion is turned into silicide.
15. The method as set forth in claim 12, wherein said sidewall offset is formed in both said first drain and source diffusion layers in said step (e).
16. A method of fabricating a semiconductor device, comprising the steps of:
(a) forming an insulating film at a surface of a semiconductor substrate to thereby define device regions in which a semiconductor device is to be formed;
(b) forming a first well having a first electrical conductivity and a second well having a second electrical conductivity in a first region in which a first transistor is to be fabricated, forming a first well having a first electrical conductivity and a second well having a second electrical conductivity in a second region in which a second transistor is to be fabricated, and forming a well in a third region in which a memory cell is to be fabricated;
(c) forming a gate electrode of said memory cell in said third region;
(d) forming a diffusion layer of said memory cell in said third region;
(e) forming a gate electrode of said first transistor in said first region and a gate electrode of said second transistor in said second region;
(f) forming first drain and source diffusion layers of said first and second transistors in both said first and second regions;
(g) forming a sidewall around said gate electrode of said first transistor, said sidewall having a sidewall offset having an edge remoter from said gate electrode than an edge of said first drain and source diffusion layers on at least one of said first drain and source diffusion layers, and forming a sidewall around said gate electrode of said second transistor; and
(h) forming second drain and source diffusion layers of said first transistor in both said first and second regions.
17. The method as set forth in claim 16, further comprising the step of lowering a resistance of at least a portion of said second drain and source diffusion layers of said first transistor.
18. The method as set forth in claim 17, wherein said portion is turned into suicide.
19. The method as set forth in claim 16, wherein said sidewall offset is formed in both said first drain and source diffusion layers in said step (g).

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A wireless transmitter product, comprising:
a charger plug including a distal end that is configured to interface with a power outlet and a proximal end that includes a first magnetic element adjacent therewith; and
a component for housing a functional element of the wireless transmitter product that includes a second magnetic element, the first magnetic element and second element being oriented respectively within the proximal end and the component housing to product magnetic attraction between the component housing and the charger plug.
2. The wireless transmitter product of claim 1 in which the functional element comprises a user interface.
3. The wireless transmitter product of claim 2 in which the user interface includes a display or controls.
4. The wireless transmitter product of claim 1 in which the functional element comprises an FM transmitter.
5. The wireless transmitter product of claim 1 in which the functional element comprises an FM transceiver.
6. The wireless transmitter product of claim 1 in which the charger plug is configured with a circumferential groove that is arranged for receiving a connector cap.
7. The wireless transmitter product of claim 6 in which the connector cap is configured as an elastically deformable body having a through passage that has a inside diameter that is substantially equal to the outside diameter of the circumferential groove so that the connector cap is removably installable in a close fitting manner in the circumferential groove.
8. The wireless transmitter product of claim 6 in which the connector cap includes a device connector slot that is sized to receive a device connector in a close fitting matter so that the device connector is removably insertable into the connector cap.
9. The wireless transmitter product of claim 1 in which the first and second magnetic elements comprise rare earth magnets.
10. The wireless transmitter product of claim 1 in which one of the first or second magnetic elements is a permanent magnet and the other is a ferromagnetic material.
11. An apparatus for coupling a component of a wireless transmitter to a charger plug in the wireless transmitter, comprising:
an elastically deformable body;
a first interface disposed within the body for removably receiving the component, the first interface being configured so that, when received, the component causes the body to elastically deform and impart a clamping force on a portion of the component; and
a second interface disposed within the body for slidably engaging with the charger plug, the second interface being configured so that, when slidably engaged on the charger, the body is elastically deformed.
12. The apparatus of claim 11 in which the elastically deformable body is formed from a polymer.
13. The apparatus of claim 11 in which the second interface comprises a circular through passage that is sized to interface with a circumferentially disposed groove in the charger plug.
14. The apparatus of claim 13 in which the body returns to a substantially un-deformed state when located within the circumferentially disposed groove.
15. The apparatus of claim 11 in which the component includes a device connector that is adapted to interface with an electronic device.
16. The apparatus of claim 15 in which the electronic device is selected from a group consisting of media player, MP3 player, mobile phone, personal digital assistant, smart phone, pocket PC, handheld game device, CD player, DVD player, and combinations thereof.
17. An FM transmitter for use in a vehicle environment comprising:
a charger plug adapted for interfacing with a DC power outlet in the vehicle and including a first magnetic element at its proximal end;
a controller coupled to the charger plug with a first wire and including a user interface on a first face and second magnetic element disposed adjacent to a second face of the controller opposite the first face, the first magnetic and second magnetic elements being oriented to generate magnetic attraction between the controller and the charger plug when the second face and the proximal end are in contact; and
a device connector coupled to the controller with a second wire, the device connector being adapted to interface with a personal media player so that media content stored on the personal media player may be modulated onto a FM signal generated by the FM transmitter that is receivable by an FM radio in the vehicle.
18. The FM transmitter of claim 17 further including an elastically deformable connector cap that includes a first interface for removably receiving a portion of the device connector and retaining the received portion through application of a normal clamping force, and a second interface that is adapted for slideable removable engagement with the charger plug.
19. The FM transmitter of claim 17 in which the first and second magnetic elements are ones of permanent magnets, rare earth magnets, or electromagnets.
20. The FM transmitter of claim 17 in which portions of circuitry used to implement FM transmitter functionality is housed within the controller.

1. An exhaust gas purification device of an internal combustion engine, comprising:
a filter that is provided in an exhaust passage of the internal combustion engine and configured to collect particulate matter in an exhaust gas;
a urea water spraying unit that is provided in the exhaust passage downstream of the filter and configured to spray urea water into the exhaust gas;
a selective reduction catalyst that is provided in the exhaust passage downstream of the urea water spraying unit and configured to reduce and purify a nitrogen compound in the exhaust gas by using ammonia produced from the urea water;
an electrostatic capacity detecting unit configured to detect an electrostatic capacity of the filter;
an accumulation amount calculating unit configured to calculate an amount of accumulated particulate matter collected by the filter, based on the detected electrostatic capacity;
a consumption amount estimating unit configured to estimate an amount of nitrogen dioxide consumed by the particulate matter that has accumulated in the filter, based on the calculated amount of accumulated particulate matter; and
a controlling unit configured to control a combustion state of the internal combustion engine such that a ratio of carbon monoxide to nitrogen dioxide in the exhaust gas flowing into the selective reduction catalyst approaches 1 to 1, based on the estimated amount of consumed nitrogen dioxide.
2. The exhaust gas purification device of an internal combustion engine according to claim 1, wherein the electrostatic capacity detecting unit includes a pair of electrodes disposed in a corresponding pair of cells that oppose each other with at least one cell in the filter interposed therebetween.
3. The exhaust gas purification device of an internal combustion engine according to claim 2, further comprising:
a bypass passage that branches off from the exhaust passage at a position upstream of the filter so as to bypass the filter; and
a second filter that is provided in the bypass passage and configured to collect particulate matter in the exhaust gas flowing through the bypass passage,
wherein the pair of electrodes are disposed in a corresponding pair of cells that oppose each other with at least one cell in the second filter interposed therebetween.
4. The exhaust gas purification device of an internal combustion engine according to claim 3, wherein when a forced regeneration of the second filter is carried out, the pair of electrodes function as a heater.
5. The exhaust gas purification device of an internal combustion engine according to claim 4, wherein a capacity of the second filter is smaller than a capacity of the filter.
6. The exhaust gas purification device of an internal combustion engine according to claim 4 further comprising an orifice disposed in the bypass passage for adjusting a flow rate of the exhaust gas flowing through the bypass passage.
7. The exhaust gas purification device of an internal combustion engine according to claim 1, wherein the internal combustion engine is a diesel engine.
8. The exhaust gas purification device of an internal combustion engine according to claim 7, wherein the filter is a diesel particulate filter.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method of obtaining data from a first backup medium comprising:
reading data from the first backup medium;
identifying an application used to generate the first backup medium;
accessing information regarding a logical format for data on the first backup medium; and
locating data on the first backup medium based on the information regarding the logical format.
2. The method of claim 1, wherein identifying comprises searching for an identifying signature used by the application.
3. The method of claim 1, wherein the information regarding the logical format includes a location where a specific type of information within the first backup medium is found.
4. The method of claim 3, wherein the information regarding the logical format includes a location on the first backup medium for: a checksum for a file header, a file name, a file size, a marker used to denote an end of file, a file last modification date, a file creation date, a file permission, start of a file content, an owner identifier, an owner name, a group identifier, a group name, or any combination thereof.
5. The method of claim 1, further comprising, in response to locating, extracting a portion of the data from the first backup medium.
6. The method of claim 5, further comprising filtering the portion of the data to obtain at least a part of the portion of the data.
7. The method of claim 6, wherein filtering is based on a criterion including a file name extension, a date that a file was created or last modified, an owner, or a group.
8. The method of claim 6, further comprising storing the at least a part of the portion of the data on a target sub-system.
9. The method of claim 1, wherein:
the method is performed on a second backup medium;
the second backup medium was generated using a different application compared to the application that generated the first backup medium; and
during at least one point in time, the method is performed on the first and second backup media on the same system simultaneously using a single data processing system.
10. The method of claim 1, wherein reading data from the first backup medium comprises reading data from a portion of the first backup medium.
11. The method of claim 1, wherein accessing information is performed in response to identifying the application.
12. A data processing system readable medium having code embodied therein, the code comprising:
an instruction for reading data from the first backup medium;
an instruction for identifying an application used to generate the first backup medium;
an instruction for accessing information regarding a logical format for data on the first backup medium; and
an instruction for locating data on the first backup medium based on the information regarding the logical format.
13. The data processing system readable medium of claim 12, wherein the instruction for identifying comprises an instruction for searching for an identifying signature used by the application.
14. The data processing system readable medium of claim 12, wherein the information regarding the logical format includes a location where a specific type of information within the first backup medium is found.
15. The data processing system readable medium of claim 14, wherein the information regarding the logical format includes a location on the first backup medium for: a checksum for a file header, a file name, a file size, a marker used to denote an end of file, a file last modification date, a file creation date, a file permission, start of a file content, an owner identifier, an owner name, a group identifier, a group name, or any combination thereof.
16. The data processing system readable medium of claim 12, further comprising, in response to locating, an instruction for extracting a portion of the data from the first backup medium.
17. The data processing system readable medium of claim 16, further comprising an instruction for filtering the portion of the data to obtain at least a part of the portion of the data.
18. The data processing system readable medium of claim 17, wherein the instruction for filtering is based on a criterion including a file name extension, a date that a file was created or last modified, an owner, or a group.
19. The data processing system readable medium of claim 17, further comprising an instruction for storing the at least a part of the portion of the data on a target sub-system.
20. The data processing system readable medium of claim 12, wherein:
the data processing system readable medium can be used on a second backup medium;
the second backup medium was generated using a different application compared to the application that generated the first backup medium; and
during at least one point in time, a single data processing system can execute the instructions of the data processing system readable medium for the first and second backup media simultaneously.
21. The data processing system readable medium of claim 12, wherein the instruction for reading data from the first backup medium comprises an instruction reading data from a portion of the first backup medium.
22. The data processing system readable medium of claim 12, wherein the instruction for accessing information is performed in response to identifying the application.
23. A system for retrieving information from backup media comprising:
a first backup medium, wherein the first backup medium was generated using a first backup application;
a second backup medium, wherein the second backup medium was generated using a second backup application;
a target sub-system; and
a data extraction sub-system capable of reading and understanding the information on the first and second backup media and storing at least a portion of the information onto the target sub-system.
24. The system of claim 23, wherein the first and second backup applications use different operating systems.
25. The system of claim 23, wherein the data extraction sub-system comprises information regarding the logical format for information on the first and second backup media and the target sub-system.