Author: claimsbot

1. A split-tip catheter for providing vascular access to a vasculature of a patient, the split-tip catheter comprising:
a catheter body defining first and second lumens, the catheter body including a split distal region, the split distal region comprising:
an arterial segment defining a distal portion of the second lumen; and
a venous segment separate from the arterial segment and defining a distal portion of the first lumen, the venous segment further defining a recess into which the arterial segment is removably positioned in a nested configuration forming a continuous columnar outer surface along the length of the recess.
2. The split-tip catheter as defined in claim 1, wherein the venous segment includes a venous distal opening on a nose portion thereof, the venous distal opening being in fluid communication with the first lumen, the nose portion disposed at a distal end of the venous segment, and wherein the arterial segment includes an arterial distal opening on a distal end thereof, the arterial distal opening being in fluid communication with the second lumen.
3. The split-tip catheter as defined in claim 2, wherein the arterial segment is maintained in the nested configuration by a guidewire extending through the venous segment and the arterial segment.
4. The split-tip catheter as defined in claim 3, wherein the guidewire is passed through the venous segment via a guidewire channel defined in the nose portion of the venous segment, and wherein the guidewire passes through the arterial segment via the arterial distal opening.
5. The split-tip catheter as defined in claim 4, wherein the nose portion of the venous segment is disposed distal to the recess.
6. The split-tip catheter as defined in claim 5, wherein the nose portion is tapered.
7. The split-tip catheter as defined in claim 6, wherein the venous distal opening is defined on a tapered portion of the nose portion.
8. The split-tip catheter as defined in claim 7, wherein the guidewire channel is defined at a distal tip of the nose portion.
9. The split-tip catheter as defined in claim 2, wherein the venous segment further comprises a venous lateral opening defined proximally of the nose portion of the venous segment, and wherein the arterial segment further comprises an arterial lateral opening defined proximally of the arterial distal opening.
10. The split-tip catheter as defined in claim 9, wherein the venous and arterial lateral openings are each defined by a compound-angle cross cut so as to impart a lateral direction component to fluid outflow from either the venous or arterial lateral opening.
11. The split-tip catheter as defined in claim 9, wherein an unseating of the arterial segment from recess of the venous segment enables a separation to be achieved between the venous lateral opening and the arterial lateral opening.
12. The split-tip catheter as defined in claim 9, wherein when inserted into a vasculature of a patient:
in a first operational configuration state blood is aspirated from the vasculature primarily via the arterial lateral opening and blood is infused into the vasculature primarily via the venous distal opening; and
in a second operational configuration state blood is aspirated from the vasculature primarily via the venous lateral opening and blood is infused into the vasculature primarily via the arterial distal opening.
13. The split-tip catheter as defined in claim 2, wherein a guidewire channel is defined from a distal end of the arterial segment to the first lumen defined by the venous segment so as to provide a guidewire path from the arterial segment to the venous segment and maintain the arterial segment and the venous segment in a joined configuration when the guidewire is passed through the guidewire channel.
14. The split-tip catheter as defined in claim 1, wherein the catheter body is substantially straight.
15. The split-tip catheter as defined in claim 1, wherein the catheter is a long-term dialysis catheter.
16. A split-tip catheter, comprising:
a catheter body defining a first lumen and a second lumen, the catheter body including a split distal region, the split distal region including:
a venous segment defining a distal portion of the first lumen, the venous segment including:
a nose portion that defines a venous distal opening in fluid communication with the first lumen, the nose portion further defining a guidewire channel extending from a proximal end of the nose portion to a distal end thereof;
a recess extending proximally of the nose portion; and
a venous lateral opening in fluid communication with the first lumen; and

an arterial segment separate from the venous segment and defining a distal portion of the second lumen, the arterial segment removably seatable in the recess provided by the venous segment, the arterial segment including:
an arterial distal opening in fluid communication with the second lumen, the arterial distal opening aligning with the guidewire channel of the nose portion when the arterial segment is removably positioned in a nested configuration forming a continuous columnar outer surface along the length of the recess of the venous segment; and
an arterial lateral opening in fluid communication with the second lumen.
17. The split-tip catheter as defined in claim 16, wherein the arterial segment is movable between a seated state in which the arterial segment is received in the recess of the venous segment and an unseated state in which the arterial segment is not received in the recess of the venous segment.
18. The split-tip catheter as defined in claim 17, wherein a spacing longitudinally extends in the recess between the nose portion and a distal end of the arterial segment.
19. The split-tip catheter as defined in claim 16, wherein a distal end of the arterial segment is rounded so as to provide a smooth contour.
20. The split-tip catheter as defined in claim 16, wherein both of the venous segment and the arterial segment can be employed for blood aspiration and blood infusion when the catheter is inserted in the vasculature of the patient.
21. The split-tip catheter as defined in claim 20, wherein the venous lateral opening is sized to enable full flow from the first lumen therethrough, and wherein the arterial lateral opening is sized to enable full flow from the second lumen therethrough.
22. The split-tip catheter as defined in claim 21, wherein the venous and arterial lateral openings are defined about at least a portion of a circumference of the split distal region so as to protect against vessel wall suck-up.
23. The split-tip catheter as defined in claim 20, wherein the venous and arterial lateral openings are skived such that a longitudinal axis of each lateral opening defines an acute angle with respect to a longitudinal axis of the respective venous or arterial segment and such that a lateral flow direction is imparted to fluid outflow therefrom.
24. The split-tip catheter as defined in claim 20, wherein a guidewire can be received through the guidewire channel of the venous segment nose portion, the arterial distal opening and the second lumen so as to maintain the arterial segment in a seated configuration.
25. The split-tip catheter as defined in claim 16, wherein the venous lateral opening is on an opposing surface of the venous segment with respect to the recess.
26. The split-tip catheter as defined in claim 16, wherein the catheter body includes a pre-curved configuration.
27. The split-tip catheter as defined in claim 16, wherein the arterial segment occupies the entirety of the recess when seated therein.
28. A split-tip catheter, comprising:
a catheter body defining a first lumen and a second lumen, the catheter body including a split distal region, the split distal region including:
a venous segment defining a distal portion of the first lumen, the venous segment further defining a distal nose portion of the split-tip catheter;
an arterial segment split from the venous segment and defining a distal portion of the second lumen, a distal end of the arterial segment being disposed proximal to the nose portion of the venous segment, wherein the arterial segment is positionable such that the arterial segment does not radially extend beyond a boundary defined by an outermost perimeter of the nose portion of the venous segment.
29. The split-tip catheter as defined in claim 28, further comprising:
a guidewire channel for enabling a guidewire to pass through a portion of the venous segment and the arterial segment to maintain the arterial segment in a position wherein the arterial segment does not radially extend beyond an outer diameter defined by the nose portion of the venous segment.
30. The split-tip catheter as defined in claim 28, wherein the nose portion shields the arterial segment during distal advancement of the split-tip catheter through a pathway in a body of a patient.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A pressure vessel fabricating method,
wherein rib plates are provided in an interior of a box-shaped pressure vessel, and the rib plates are joined to an inner surface of a wall of the pressure vessel in such a state that the rib plates are kept erected through welding to the wall of the pressure vessel from an outside of the wall of the pressure vessel.
2. The pressure vessel fabricating method according to claim 1,
wherein the rib plates are provided in such a manner as to extend between inner surfaces of walls of the pressure vessel that are opposed to each other, and both ends of the rib plates are respectively welded to the inner surfaces of the walls.
3. The pressure vessel fabricating method according to claim 1,
wherein the rib plates include communication cut-outs that are communicated with both sides of the rib plates.
4. The pressure vessel fabricating method according to claim 1,
wherein a part or all of the rib plates include connecting plates which extend between adjacent rib plates so as to fix the adjacent rib plates to each other.
5. The pressure vessel fabricating method according to claim 1,
wherein the welding is resistance welding or laser beam welding.
6. The pressure vessel fabricating method according to claim 1,
wherein the pressure vessel is a hydrogen absorbing alloy vessel that stores a hydrogen absorbing alloy.
7. The pressure vessel fabricating method according to claim 1,
wherein the rib plates are provided to extend in a plate-length direction with leaving spaces from the pressure vessel by being not to extend along a full length of the pressure vessel.

What is claimed is:

1. A semiconductor memory comprising:
a memory cell array;
a signal generation circuit configured to generate an internal address signal used for selecting rows of the memory cell array when a refresh operation is executed; and
a control circuit configured to fix a value of at least one of bits of the internal address signal based on a first control signal and to select the rows in a refresh area whose memory capacity is smaller than that of the memory cell array, when the refresh operation is executed.
2. The semiconductor memory according to claim 1, wherein values of n significant bits of the internal address signal are fixed when the refresh area has a memory capacity which is n of the memory capacity of the memory cell array.
3. The semiconductor memory according to claim 1, wherein intervals at which the rows in the refresh area are selected are made 2n times longer, when the refresh area has a memory capacity which is n of the memory capacity of the memory cell array.
4. The semiconductor memory according to claim 1, wherein said refresh area is predetermined based on data stored in a memory element of a chip.
5. The semiconductor memory according to claim 1, wherein a function of selecting only the rows in the refresh area is made effective in response to a second control signal.
6. The semiconductor memory according to claim 1, wherein one of two modes is selected when the refresh operation is executed, said two modes including a mode in which all rows of the memory cell array are selected based on the first control signal, and a mode in which only the rows in the refresh area are selected.
7. The semiconductor memory according to claim 1, wherein said first control signal is generated outside of a chip.
8. The semiconductor memory according to claim 1, wherein said first control signal is generated inside of a chip.
9. The semiconductor memory according to claim 1, wherein said semiconductor memory is used in a portable electronic device.
10. The semiconductor memory according to claim 1, which is a dynamic random access memory.
11. A semiconductor memory device comprising:
a memory cell array;
a signal generation circuit configured to generate an internal address signal used for selecting rows of the memory cell array when a refresh operation is executed;
a control circuit configured to select the rows in a refresh area whose memory capacity is smaller than that of the memory cell array, when the refresh operation is executed; and
a refresh timer configured to determine refresh execution timings,
wherein, when the rows in the refresh area are selected, the refresh timer switches the refresh execution timings and changes timings for selecting the rows in the refresh area.
12. The semiconductor memory according to claim 11, wherein values of n significant bits of the internal address signal are fixed when the refresh area has a memory capacity which is n of the memory capacity of the memory cell array.
13. The semiconductor memory according to claim 11, wherein intervals at which the rows in the refresh area are selected are made 2n times longer, when the refresh area has a memory capacity which is n of the memory capacity of the memory cell array.
14. The semiconductor memory according to claim 11, wherein said refresh area is predetermined based on data stored in a memory element of a chip.
15. The semiconductor memory according to claim 11, wherein a function of selecting only the rows in the refresh area is made effective in response to a second control signal.
16. The semiconductor memory according to claim 11, wherein one of two modes is selected when the refresh operation is executed, said two modes including a mode in which all rows of the memory cell array are selected based on the first control signal, and a mode in which only the rows in the refresh area are selected.
17. The semiconductor memory according to claim 11, wherein said first control signal is generated outside of a chip.
18. The semiconductor memory according to claim 11, wherein said first control signal is generated inside of a chip.
19. The semiconductor memory according to claim 11, wherein said semiconductor memory is used in a portable electronic device.
20. The semiconductor memory according to claim 11, which is a dynamic random access memory.
21. A semiconductor memory comprising:
a memory cell array;
a signal generation circuit configured to generate an internal address signal used for selecting rows of the memory cell array when a refresh operation is executed;
a control circuit configured to fix a value of at least one of bits of the internal address signal based on a first control signal and to select the rows in a refresh area whose memory capacity is smaller than that of the memory cell array, when the refresh operation is executed; and
a refresh timer configured to determine refresh execution timings,
wherein, when the rows in the refresh area are selected, the refresh timer switches the refresh execution timings and changes timings for selecting the rows in the refresh area.
22. The semiconductor memory according to claim 21, wherein values of n significant bits of the internal address signal are fixed when the refresh area has a memory capacity which is n of the memory capacity of the memory cell array.
23. The semiconductor memory according to claim 21, wherein intervals at which the rows in the refresh area are selected are made 2n times longer, when the refresh area has a memory capacity which is n of the memory capacity of the memory cell array.
24. The semiconductor memory according to claim 21, wherein said refresh area is predetermined based on data stored in a memory element of a chip.
25. The semiconductor memory according to claim 21, wherein a function of selecting only the rows in the refresh area is made effective in response to a second control signal.
26. The semiconductor memory according to claim 21, wherein one of two modes is selected when the refresh operation is executed, said two modes including a mode in which all rows of the memory cell array are selected based on the first control signal, and a mode in which only the rows in the refresh area are selected.
27. The semiconductor memory according to claim 21, wherein said first control signal is generated outside of a chip.
28. The semiconductor memory according to claim 21, wherein said first control signal is generated inside of a chip.
29. The semiconductor memory according to claim 21, wherein said semiconductor memory is used in a portable electronic device.
30. The semiconductor memory according to claim 21, which is a dynamic random access memory.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A measuring apparatus comprising:
a heating unit for applying heat to a first point in selected one of layers formed in a workpiece and propagating the heat to a second point of the workpiece;
a measuring unit for measuring a displacement of the workpiece at the second point to which the heat has been propagated; and
an analyzing unit for analyzing an internal structure of the workpiece based on the displacement measured by said measuring unit in consideration of a distance between the first point and the second point.
2. The measuring apparatus according to claim 1, wherein said heating unit utilizes a frequency-modulated laser beam to apply heat to the first point.
3. The measuring apparatus according to claim 2, wherein said measuring unit measures a reflected laser beam which is reflected from the workpiece,
wherein said analyzing unit is configured to extract an amplitude in synchronism with a modulation frequency of the frequency-modulated laser beam from the reflected laser beam.
4. The measuring apparatus according to claim 2, wherein the frequency-modulated laser beam is varied in modulation frequency,
wherein said analyzing unit outputs information of the workpiece along its depth.
5. A measuring apparatus comprising:
a strain applying unit for applying a strain to a first point in selected one of layers formed in a workpiece and propagating the strain to a second point of the workpiece;
a measuring unit for measuring a displacement of the workpiece at the second point to which the strain has been propagated; and
an analyzing unit for analyzing an internal structure of the workpiece based on the displacement measured by said measuring unit in consideration of a distance between the first point and the second point.
6. The measuring apparatus according to claim 5, wherein said strain applying unit utilizes a frequency-modulated wave to apply the strain to the first point.
7. The measuring apparatus according to claim 6, wherein said strain applying unit utilizes a sound wave to apply the strain to the first point.
8. The measuring apparatus according to claim 6, wherein said strain applying unit utilizes an ultrasonic wave to apply the strain to the first point.
9. The measuring apparatus according to claim 6, wherein said strain applying unit utilizes an electromagnetic wave to apply the strain to the first point.
10. The measuring apparatus according to claim 6, wherein said measuring unit measures a reflected wave which is reflected from the workpiece,
wherein said analyzing unit is configured to extract an amplitude in synchronism with a modulation frequency of the frequency-modulated wave from the reflected wave.
11. The measuring apparatus according to claim 6, wherein the frequency-modulated wave is varied in modulation frequency, wherein said analyzing unit outputs information of the workpiece along its depth.
12. A polishing apparatus comprising:
a polishing table having a polishing surface;
a top ring for holding and pressing a workpiece to be polished against said polishing surface; and
a measuring apparatus for measuring the thickness of layers formed in the workpiece, said measuring apparatus comprising:
a heating unit for applying heat to a first point in selected one of the layers formed in the workpiece and propagating the heat to a second point of the workpiece;
a measuring unit for measuring a displacement of the workpiece at the second point to which the heat has been propagated; and
an analyzing unit for analyzing an internal structure of the workpiece based on the displacement measured by said measuring unit in consideration of a distance between the first point and the second point.
13. The polishing apparatus according to claim 12, wherein said heating unit utilizes a frequency-modulated laser beam to apply heat to the first point.
14. The polishing apparatus according to claim 13, wherein said measuring unit measures a reflected laser beam which is reflected from the workpiece,
wherein said analyzing unit is configured to extract an amplitude in synchronism with a modulation frequency of the frequency-modulated laser beam from the reflected laser beam.
15. The polishing apparatus according to claim 13, wherein the frequency-modulated laser beam is varied in modulation frequency,
wherein said analyzing unit outputs information of the workpiece along its depth.
16. A polishing apparatus comprising:
a polishing table having a polishing surface;
a top ring for holding and pressing a workpiece to be polished against said polishing surface; and
a measuring apparatus for measuring the thickness of layers formed in the workpiece, said measuring apparatus comprising:
a strain applying unit for applying a strain to a first point in selected one of the layers formed in the workpiece and propagating the strain to a second point of the workpiece;
a measuring unit for measuring a displacement of the workpiece at the second point to which the strain has been propagated; and
an analyzing unit for analyzing an internal structure of the workpiece based on the displacement measured by said measuring unit in consideration of a distance between the first point and the second point.
17. The polishing apparatus according to claim 16, wherein said strain applying unit utilizes a frequency-modulated wave to apply the strain to the first point.
18. The polishing apparatus according to claim 17, wherein said strain applying unit utilizes a sound wave to apply the strain to the first point.
19. The polishing apparatus according to claim 17, wherein said strain applying unit utilizes an ultrasonic wave to apply the strain to the first point.
20. The polishing apparatus according to claim 17, wherein said strain applying unit utilizes an electromagnetic wave to apply the strain to the first point.
21. The polishing apparatus according to claim 17, wherein said measuring unit measures a reflected wave which is reflected from the workpiece,
wherein said analyzing unit is configured to extract an amplitude in synchronism with a modulation frequency of the frequency-modulated wave from the reflected wave.
22. The polishing apparatus according to claim 17, wherein the frequency-modulated wave is varied in modulation frequency,
wherein said analyzing unit outputs information of the workpiece along its depth.