Author: claimsbot

1. A direct detector for terahertz radiation, comprising:
a field-effect transistor formed in a semiconductor substrate, comprising a heterostructure that provides a two-dimensional electron gas in the channel region between the source and the drain of the field-effect transistor, and a periodic split-grating gate comprising a plurality of fingers on a front surface above the channel region, wherein at least one of the fingers of the grating gate is individually biased, to modulate the electron density in the two-dimensional electron gas;
means for applying a gate voltage to the periodic grating gate and a independent gate voltage to the at least one individually biased finger; and
means for detecting an output signal from the field-effect transistor when the front surface is irradiated with terahertz radiation.
2. The direct detector of claim 1, wherein the at least one individually biased finger is biased to near the pinch-off voltage of the channel.
3. The direct detector of claim 1, wherein the heterostructure comprises one or more quantum wells.
4. The direct detector of claim 3, wherein the heterostructure comprises a single quantum well.
5. The direct detector of claim 1, wherein the heterostructure comprises dissimilar II-V compound semiconductors, II-VI compound semiconductors, or Ge\u2014Si alloys.
6. The direct detector of claim 5, wherein the dissimilar III-V compound semiconductors comprise GaAs and AlGaAs.
7. The direct detector of claim 1, wherein the terahertz radiation has a frequency of greater than 100 GHz.
8. The direct detector of claim 1, wherein the detecting means comprises measuring the photoconductive response of the field-effect transistor.
9. The direct detector of claim 1, wherein the detecting means comprises measuring the photovoltaic response of the field-effect transistor.
10. The direct detector of claim 1, further comprising a back gate on the opposite side of the channel region from the grating gate.
11. The direct detector of claim 1, further comprising a transparent front gate on the front surface above the channel region.
12. The direct detector of claim 1, wherein the substrate comprises a thinned substrate.
13. The direct detector of claim 1, further comprising a resistive shunt that connects the fingers of the grating gate in parallel and means for applying a shunt voltage to the resistive shunt.
14. The direct detector of claim 13, wherein the shunt voltage is approximately equal to the source-drain voltage.
15. A direct detector for terahertz radiation, comprising:
a field-effect transistor formed in a semiconductor substrate, comprising a single quantum well that provides a two-dimensional electron gas in the channel region between the source and the drain of the field-effect transistor, and a periodic grating gate comprising a plurality of fingers on a front surface above the channel region to modulate the electron density in the two-dimensional electron gas;
means for applying a gate voltage to the periodic grating gate; and
means for detecting an output signal from the field-effect transistor when the front surface is irradiated with terahertz radiation.
16. The direct detector of claim 15, wherein the single quantum well comprises dissimilar II-V compound semiconductors, II-VI compound semiconductors, or Ge\u2014Si alloys.
17. The direct detector of claim 16, wherein the dissimilar III-V compound semiconductors comprise GaAs and AlGaAs.
18. The direct detector of claim 16, wherein the detecting means comprises measuring the photoconductive response of the field-effect transistor.
19. The direct detector of claim 16, wherein the detecting means comprises measuring the photovoltaic response of the field-effect transistor.
20. The direct detector of claim 16, further comprising a back gate on the opposite side of the channel region from the grating gate.
21. The direct detector of claim 16, further comprising a transparent front gate on the front surface above the channel region.
22. The direct detector of claim 16, wherein the substrate comprises a thinned substrate.
23. The direct detector of claim 16, further comprising a resistive shunt that connects the fingers of the grating gate in parallel and means for applying a shunt voltage to the resistive shunt.
24. A direct detector for terahertz radiation, comprising:
a field-effect transistor formed in a semiconductor substrate, comprising a heterostructure that provides a two-dimensional electron gas in the channel region between the source and the drain of the field-effect transistor, and a periodic grating gate comprising a plurality of fingers on a front surface above the channel region to modulate the electron density in the two-dimensional electron gas;
a resistive shunt that connects the fingers of the grating gate in parallel;
means for applying a shunt voltage to the resistive shunt; and
means for detecting an output signal from the field-effect transistor when the front surface is irradiated with terahertz radiation.
25. The direct detector of claim 24, wherein the shunt voltage is approximately equal to the source-drain voltage.
26. The direct detector of claim 24, wherein the heterostructure comprises one or more quantum wells.
27. The direct detector of claim 24, wherein the detecting means comprises measuring the photoconductive response of the field-effect transistor.
28. The direct detector of claim 24, wherein the detecting means comprises measuring the photovoltaic response of the field-effect transistor.
29. The direct detector of claim 24, further comprising a back gate on the opposite side of the channel region from the grating gate.
30. The direct detector of claim 24, further comprising a transparent front gate on the front surface above the channel region.
31. The direct detector of claim 24, wherein the substrate comprises a thinned substrate.
32. A direct detector for terahertz radiation, comprising:
a field-effect transistor formed in a semiconductor substrate, comprising a heterostructure that provides a two-dimensional electron gas in the channel region between the source and the drain of the field-effect transistor, and a periodic grating gate comprising a plurality of fingers on a front surface above the channel region to modulate the electron density in the two-dimensional electron gas;
means for applying a gate voltage to the periodic grating gate; and
means for detecting a photovoltaic response of the field-effect transistor when the front surface is irradiated with terahertz radiation.
33. The direct detector of claim 32, wherein the heterostructure comprises one or more quantum wells.
34. The direct detector of claim 33, wherein the heterostructure comprises a single quantum well.
35. The direct detector of claim 31, further comprising a back gate on the opposite side of the channel region from the grating gate.
36. The direct detector of claim 31, further comprising a transparent front gate on the front surface above the channel region.
37. The direct detector of claim 31, wherein the substrate comprises a thinned substrate.
38. A direct detector for terahertz radiation, comprising:
a field-effect transistor formed in a thin semiconductor substrate, comprising a heterostructure that provides a two-dimensional electron gas in the channel region between the source and the drain of the field-effect transistor, and a periodic grating gate comprising a plurality of fingers on a front surface above the channel region to modulate the electron density in the two-dimensional electron gas;
means for applying a gate voltage to the periodic grating gate; and
means for detecting an output signal from the field-effect transistor when the front surface is irradiated with terahertz radiation.
39. The direct detector of claim 38, wherein the thickness of the substrate is less than 10 microns.
40. The direct detector of claim 38, wherein the thin semiconductor substrate is suspended by a plurality of legs from an unthinned portion of the substrate.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for manufacturing an embossed sheet, in which irregularities on a surface of an emboss roller are formed by transfer on a surface of a sheet-like material, comprising the steps of:
continuously running a flexible strip-shaped sheet-like material, on which a resin solution layer is formed by coating the sheet-like material with a resin solution which is diluted with an organic solvent;
evaporating the organic solvent which is contained in the resin solution layer;
winding the sheet-like material after dried around the emboss roller which is rotating, and then transferring the irregularities of the surface of the emboss roller to the resin solution layer; and
curing the resin solution layer while the sheet-like material is wound around the emboss roller.
2. The method for manufacturing an embossed sheet according to claim 1, wherein
the resin solution is a radiation curable resin solution, and that the resin solution layer is cured by exposing the resin solution layer to a radiation.
3. The method for manufacturing an embossed sheet according to claim 1, wherein
the resin solution contains 10% by weight or more of the organic solvent.
4. The method for manufacturing an embossed sheet according to claim 1, wherein
the resin solution is coated by a die coater, a bar coater, a roll coater, or a gravure coater.
5. The method for manufacturing an embossed sheet according to claim 1, wherein
the resin solution comprises at least the following compounds (A) and (B):
(A) a compound containing a polymerizable group such as an acroyl group andor a vinyl group; and
(B) a compound which generates an active species capable of polymerizing the compound (A) by radiation exposure.
6. The method for manufacturing an embossed sheet according to claim 1, wherein
the resin solution has a viscosity of 100 mPa\xb7s or less when the solution is coated.
7. A method for manufacturing an embossed sheet, in which irregularities on a surface of an emboss roller are formed by transfer on a surface of a sheet-like material, comprising the steps of:
continuously running a flexible strip-shaped sheet-like material, on which a resin solution layer is formed by coating the material with a resin solution which is diluted with an organic solvent;
winding the sheet-like material around the emboss roller which is rotating, and then transferring the irregularities of the surface of the emboss roller to the resin solution layer in which the organic solvent remains; and
curing the resin solution layer while the sheet-like material is wound around the emboss roller.
8. The method for manufacturing an embossed sheet according to claim 7, wherein
the resin solution is a radiation curable resin solution, and that the resin solution layer is cured by exposing the resin solution layer to a radiation.
9. The method for manufacturing an embossed sheet according to claim 7, wherein
the resin solution layer is cured such a state that the resin solution layer contains 1 to 10% by weight of the organic solvent.
10. The method for manufacturing an embossed sheet according to claim 7, wherein
the concentration of the organic solvent is controlled by evaporating the organic solvent within the resin solution, before winding the sheet-like material around the emboss roller which is rotating.
11. The method for manufacturing an embossed sheet according to claim 7, wherein
the concentration of the organic solvent is controlled by evaporating the organic solvent within the resin solution, after releasing the sheet-like material from the emboss roller.
12. The method for manufacturing an embossed sheet according to claim 7, wherein
an irregular pattern which is formed by transfer on the sheet-like material has a pitch of 100 \u03bcm or less.
13. The method for manufacturing an embossed sheet according to claim 7, wherein
the embossed sheet is used as an optical film.
14. An apparatus for manufacturing an embossed sheet, comprising:
a sheet-like material feeding device for feeding a flexible strip-shaped sheet-like material;
a coating device for coating a surface of the sheet-like material with a resin solution which is diluted with an organic solvent;
a drying device for evaporating the organic solvent contained in the resin solution layer;
a transferring device for forming by transfer irregularities of a surface of the emboss roller on the surface of the sheet-like material, while winding the sheet-like material which is continuously running around the emboss roller which is rotating; and
a resin solution curing device for curing the resin solution while the sheet-like material is wound around the emboss roller.
15. An apparatus for manufacturing an embossed sheet, comprising:
a sheet-like material feeding device for feeding a flexible strip-shaped sheet-like material;
a coating device for coating a surface of the sheet-like material with a resin solution which is diluted with an organic solvent;
a first drying device for evaporating the organic solvent contained in the resin solution layer;
a transferring device for forming by transfer irregularities of a surface of the emboss roller on the surface of the sheet-like material, while winding the sheet-like material which is continuously running around the emboss roller which is rotating;
a resin solution curing device for curing the resin solution while the sheet-like material is wound around the emboss roller; and
a second drying device for evaporating the organic solvent contained in the resin solution layer after the layer is cured.
16. The apparatus for manufacturing an embossed sheet according to claim 14, wherein
the resin solution curing device is irradiation device which is provided in proximity to the emboss roller.
17. A method for manufacturing a patterned sheet which has fine patterns, comprising the steps of:
in a situation in which a transfer-receiving material containing an organic solvent and a resin polymer is interposed between a mold for pattern transfer having a predetermined pattern formed thereon and a substrate, bringing the mold for pattern transfer into close contact with the substrate via the transfer-receiving material;
evaporating a portion of the organic solvent which is contained in the transfer-receiving material between the mold for pattern transfer and the substrate; and
releasing a transferred film from the mold for pattern transfer, the transferred film being made of the transfer-receiving material on which fine patterns are formed by transferring the predetermined pattern of the mold for pattern transfer,
wherein, in a case of releasing the transferred film from the mold for pattern transfer, the transferred film which contains the organic solvent is released from the mold for pattern transfer.
18. The method for manufacturing the patterned sheet according to claim 17, wherein,
the concentration of the organic solvent within the transferred film is 5 to 40% by weight ratio when the transferred film is released from the mold for pattern transfer.
19. The method for manufacturing the patterned sheet according to claim 17, wherein
at least one of polymers included in the substrate is soluble in the organic solvent.
20. The method for manufacturing the patterned sheet according to claim 17, wherein
the transfer-receiving material is interposed between the mold for pattern transfer and the substrate, by coating at least either one of the mold for pattern transfer and the substrate with the transfer-receiving material.
21. The method for manufacturing the patterned sheet according to claim 17, in which the transfer-receiving material is interposed between the mold for pattern transfer and the substrate by coating the mold for pattern transfer with the transfer-receiving material, wherein,
at least a periphery of an area on which the transfer-receiving material is coated among the mold for pattern transfer is depressurized when the mold for pattern transfer is coated with the transfer-receiving material.
22. The method for manufacturing the patterned sheet according to claim 17, in which the transfer-receiving material is interposed between the mold for pattern transfer and the substrate by coating the substrate with the transfer-receiving material, wherein
at least a periphery of the transfer-receiving material is depressurized when the mold for pattern transfer is brought into close contact with the substrate via the transfer-receiving material.
23. The method for manufacturing the patterned sheet according to claim 17, in which the transfer-receiving material is interposed between the mold for pattern transfer and the substrate by coating the substrate with the transfer-receiving material, wherein
the mold for pattern transfer is brought into close contact with the substrate via the transfer-receiving material while keeping them with a pressure applied thereon.
24. The method for manufacturing the patterned sheet according to claim 17, wherein
the mold for pattern transfer is a Si workpiece which is derived from a Si substrate processed by using a mask and an etching treatment, or is a replica which is derived from the Si workpiece subjected to electroforming.
25. The method for manufacturing the patterned sheet according to claim 17, wherein
an aspect ratio of a salient of the fine pattern which is formed on the transferred film satisfies the following relational expression: HeightWidth \u22672.
26. The method for manufacturing the patterned sheet according to claim 17, wherein
an area ratio of a salient to a recess of the fine pattern formed on the transferred film satisfies the following relational expression: an area of salientan area of recess \u22660.5.
27. A patterned sheet, wherein the patterned sheet is manufactured in accordance with the method for manufacturing the patterned sheet according to claim 17.

1. A method of patterning an electronic or photonic material on a substrate comprising:
forming a film of said electronic or photonic material on said substrate; and
using an adhesive to selectively remove regions of said electronic or photonic material from said film,
thereby leaving on said substrate said patterned electronic or photonic material.
2. A method as claimed in claim 1, wherein the surface of the substrate is treated to provide said surface with a pattern defining where said electronic or photonic material is to be present prior to formation of the film of electronic or photonic material.
3. A method as claimed in claim 2, wherein said film of electronic or photonic material fills said pattern, overlaps the edges of said pattern and has regions extending beyond said edges of said pattern.
4. A method as claimed in claim 1, wherein said film of electronic or photonic material is continuous.
5. A method as claimed in claim 2, wherein said pattern comprises areas of higher and lower surface energy or, after said deposition of said electronic or photonic material, of higher and lower interfacial toughness.
6. A method as claimed in claim 2, wherein treating of said surface of said substrate comprises depositing a surface energy modification layer and patterning said surface energy modification layer.
7. A method as claimed claim 2, further comprising a step of depositing a sacrificial layer on said electronic or photonic material.
8. A method as claimed in claim 7, wherein said adhesive is brought into contact with said sacrificial layer.
9. A method as claimed in claim 1 comprising:
providing a patterned substrate having areas of higher and lower surface energies and having deposited thereon (i) a continuous film of electronic or photonic material and (ii) a sacrificial layer;
bringing an adhesive into contact with said sacrificial layer; and
peeling off said adhesive to selectively remove regions of said electronic or photonic material from said film.
10. A method as claimed in claim 1, comprising:
treating the surface of said substrate to define areas having higher and lower surface energies;
forming a film of said electronic or photonic material on said substrate;
depositing a sacrificial layer on said film;
bringing an adhesive into contact with said sacrificial layer; and
peeling off said adhesive to selectively remove regions of said electronic or photonic material from said film.
11. A method as claimed in claim 2, wherein said pattern is a topographical profile comprising protrusions and recesses.
12. A method as claimed in claim 2 or claim 11, wherein treating of said surface of said substrate comprises depositing a sacrificial layer on said substrate and treating said layer to define a topographical profile.
13. A method as claimed in claim 12, wherein said film of electronic or photonic material is formed on said sacrificial layer.
14. A method as claimed in claim 11, wherein said adhesive is brought into contact with the protrusions.
15. A method as claimed in claim 11 comprising:
providing a substrate having deposited thereon (i) a sacrificial layer in the form of a topographical profile comprising protrusions and recesses and (ii) a film of electronic or photonic material;
bringing an adhesive into contact with said protrusions; and
peeling off said adhesive to selectively remove regions of electronic or photonic material from said film.
16. A method as claimed in claim 15, comprising:
depositing on the surface of a substrate a sacrificial layer and treating said layer to define a topographical profile;
forming a film of said electronic or photonic material on said profile;
bringing an adhesive into contact with said protrusions; and
peeling off said adhesive to selectively remove regions of said electronic or photonic material from said film.
17. A method as claimed in claim 12, wherein a surface energy modification layer is deposited on said substrate prior to said sacrificial layer.
18. A method as claimed in claim 1, wherein said electronic or photonic material is a conducting polymer, a polymer dielectric or a nanoparticulate material.
19. A method as claimed in claim 1, wherein said electronic or photonic material is an organic semi conductor.
20. A method as claimed in claim 19, wherein said electronic or photonic material is a conjugated non-polymeric semi conductor.
21. A method as claimed in claim 19, wherein said electronic or photonic material is a conjugated polymeric semiconductor.
22. A method as claimed in claim 1, wherein said adhesive is on a carrier.
23. A method as claimed in claim 1, wherein said film of electronic or photonic material is formed by solution deposition.
24. Use of an adhesive in the preparation of a patterned electronic or photonic material on a substrate, wherein said adhesive is used to selectively remove regions of said electronic or photonic material from a film thereof, thereby leaving on said substrate said patterned electronic or photonic material.
25. A patterned electronic or photonic material on a substrate obtainable by a method as claimed in claim 1.
26. An electronic or photonic device comprising a patterned electronic or photonic material on a substrate as claimed in claim 25.
27. A device as claimed in claim 26, wherein the device is a transistor comprising said patterned electronic or photonic material as an active semi conducting layer.
28. An electronic or photonic device comprising:
a substrate; and
at least one patterned layer of electronic or photonic material;
wherein said substrate has a pattern of surface energy modification matching a pattern of at least one patterned layer of said electronic or photonic material and said layer of electronic or photonic material is formed by solution deposition.
29. An electronic or photonic device as claimed in claim 28, wherein said pattern of surface energy modification comprises a pattern in or on one or more layers of surface energy modification material.
30. An electronic or photonic device comprising:
a substrate; and
at least one patterned layer of electronic or photonic material;
wherein the thickness of said layer of electronic or photonic material at a distance 2 microns away from the edge of the pattern is within 10% of the average thickness of the layer of electronic or photonic material.
31. A method of making an electronic or photonic device on a substrate comprising:
preparing a patterned electronic or photonic material on a substrate as claimed in claim 1; and
using said substrate bearing said pattern in the manufacture of a device.
32. A method of fabricating an electronic or photonic device on a substrate
using solution or vacuum deposition of an electronic or photonic material, the method comprising:
providing said substrate;
treating a surface of said substrate to provide said substrate with a pattern defining where said electronic or photonic material is to be present on said fabricated device;
depositing said electronic or photonic material from solution or vacuum over said pattern on said substrate such that the deposited material overlaps the edges of said pattern and has regions extending beyond said edges of said pattern;
applying a carrier bearing an adhesive over said deposited electronic or photonic material on said substrate;
removing said adhesive bearing carrier together with said regions of said deposited material extending beyond said edges of said pattern to leave said deposited material in situ in said pattern; and
using said substrate bearing said pattern of deposited material to fabricate said electronic or photonic device.
33. A method as claimed in claim 32, wherein said electronic or photonic device comprises an electronic device, wherein said electronic or photonic material comprises a semi-conducting material, and wherein said substrate includes one or more electrodes optimally provided with an energy level matching material to match an energy level of said electrode to an energy level of said semi-conducting material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A box for receiving an electrostatic fabric, comprising:
a top cover having a hole, two guides, two stoppers, a plurality of positioning pins, and a third notch and a fourth notch;
a sliding member having a fixing portion mounting with an electrostatic fabric, a tongue having a through opening adjacent to the fixing portion, two sliders extending from a top surface of the tongue, which are received and slidable in the two guides of the top cover, two resilient arms extending from the fixing portion toward the through opening of the tongue and having two sliding blocks provided at free ends thereof, in which the two sliding blocks and the two stoppers of the top cover cooperate with each other to selectively control the sliding member at a lock state and a release state, two hooks provided at each side of the tongue;
a bottom cover having a guiding post corresponding to the hole of the top cover, a plurality of positioning holes corresponding to the plurality of positioning pins, and a third notch and a fourth notch;
a button having a flange and coupled to an end of a helical spring sleeved on the guiding post of the bottom cover, in which the button is biased by the helical spring against the hole of the top cover and the flange is between the hole of the top cover and the two resilient arms of the sliding member, two springs connecting the two hooks and two fixing post of the bottom cover, whereby when the top cover and the bottom cover are assembled, the first notch and the third notch forms a first opening at one end of the box, and the second notch and the fourth notch forms a second opening at the other end thereof, so that the electrostatic fabric can selectively extend outside the box through the first opening, while the tongue of the sliding member selectively retracts in the box through the second opening thereof.
2. The box as claimed in claim 1, wherein the two sliding blocks each have an inclined plane and a vertical plane, and the two stoppers each have an inclined plane and a vertical plane corresponding to the inclined plane and the vertical plane of the two sliding blocks, respectively.
3. The box as claimed in claim 1, wherein top surfaces of the two resilient arms at free ends thereof are located above the tongue of the sliding member.
4. The box as claimed in claim 1, wherein the flange of the button has a diameter larger than a distance between the two resilient arms and a diameter of the hole of the top cover.
5. The box as claimed in claim 1, wherein the two sliders each have an inclined plane for easily sliding in each guide of the top cover.
6. The box as claimed in claim 1, wherein two of the plurality of positioning holes are formed on the two fixing posts, respectively.
7. The box as claimed in claim 1, wherein the top cover further has two ribs projecting from an inner surface thereof and abutting against a top surface of the fixing portion of the sliding member, and the bottom cover further has two ribs projecting from an inner surface thereof and abutting against a bottom surface of the fixing portion of the sliding member.