Author: claimsbot

1. A device for extracting glucose from living tissue of a subject, the device comprising:
an extraction cartridge removably installed in the device; and
a main body;
wherein the extraction cartridge comprises:
an absorbing member for holding purified water for collecting the glucose extracted from the living tissue;
a chamber for holding the absorbing member;
a purified water supply path for supplying the purified water to the absorbing member;

a first and second electrode, the first electrode disposed adjacent the absorbing member in the chamber and the second electrode disposed on an opposite side of the absorbing member in the chamber from the first electrode; and
a mounting part; and

wherein the main body comprises:
a power source for applying a voltage for moving the glucose to the purified water using the electrodes;
a pump for holding and supplying the purified water to the absorbing member through the purified water supply path; and
a connection part for engaging the mounting part.
2. The device of claim 1, wherein the absorbing member comprises paper or a mesh sheet.
3. The device of claim 1, wherein the chamber comprises an opening for contacting the absorbing member with skin of the subject.
4. The device of claim 1, wherein the extraction cartridge further comprises an end terminal for connecting to the power source.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A data transmission circuit comprising:
a positive data transmission line and a negative data transmission line;
a data output unit connected to the positive data transmission line and negative data transmission line and configured to generate a recovered data signal based on data signals communicated via the positive data transmission line and negative data transmission line; and
a plurality of data signal driving units respectively connected at different points along the positive data transmission line and negative data transmission line, each data signal driving unit being configured to generate a positive data signal and a negative data signal based on a data input signal and a data transmission distance between the data signal driving unit and the data output unit, and provide the positive data signal to the positive data transmission line and the negative data signal to the negative data transmission line.
2. The data transmission circuit of claim 1, wherein for each one of the plurality of data signal driving units, a strength of the positive data signal and a strength of the negative data signal will vary in proportion to the data transmission distance.
3. The data transmission circuit of claim 2, wherein the strength of the positive data signal and the strength of the negative data signal are controlled according to a respective size of a driving transistor included in each one of the plurality of data signal driving units.
4. The data transmission circuit of claim 2, wherein the strength of the positive data signal and the strength of the negative data signal are controlled according to a strength of a current source included in each one of the plurality of data signal driving units.
5. (canceled)
6. The data transmission circuit of claim 1 further comprising:
a plurality of pull-up devices, each respectively corresponding to one of the plurality of data signal driving units, each pull-up device being connected at one of the different points along the positive data transmission line and the negative data transmission line and being configured to generate a positive pull-up signal and a negative pull-up signal based on the data transmission distance, provide the positive pull-up signal to the positive data transmission line, and provide the negative pull-up signal to the negative data transmission line.
7. A data transmission circuit comprising:
a positive data transmission line and a negative data transmission line;
a data output unit connected to the positive data transmission line and negative data transmission line and configured to generate a recovered data signal based on data signals communicated via through the positive data transmission line and negative data transmission line;
a plurality of data signal driving units respectively connected at different points along the positive data transmission line and negative data transmission line; and
a plurality of pull-up devices respectively corresponding on a one-for-one basis with one of the plurality of data signal driving units and being connected at the different points along the positive data transmission line and negative data transmission line,
wherein each data signal driving unit provides a positive data signal to the positive data transmission line and a negative data signal to the negative data transmission line, and
each pull-up device provides a positive pull-up signal to the positive data transmission line and a negative pull-up signal to the negative data transmission line,
wherein at least one of relative strengths of the respective positive data signals, negative data signals, positive pull-up signals, and negative pull-up signals is adjusted according to one of a number of data transmission distances respectively associated with each one of the plurality of data signal driving units and the data output unit.
8-10. (canceled)
11. The data transmission circuit of claim 7, wherein the relative strengths of the positive pull-up signals and the negative pull-up signals are adjusted to be proportion to one of the number of data transmission distances.
12. The data transmission circuit of claim 11, wherein the relative strengths of each one of the positive pull-up signals and each one of the negative pull-up signals is controlled by a corresponding size of pull-up transistors included in at least one of the plurality of pull-up devices.
13-16. (canceled)
17. The data transmission circuit of claim 7, wherein each data signal driving unit provides a positive data signal and a negative data signal based on a data input signal and a corresponding one of the number of data transmission distances.
18-20. (canceled)
21. The data transmission circuit of claim 7, wherein the pull-up devices are spatially separated from the data output block.
22. An image sensor comprising:
a pixel array configured to generate analog signals representing a captured image;
a signal processor configured to convert the analog signals to first and second digital signals;
a first positive data transmission line;
a first negative data transmission line;
a first data output unit connected to the first positive data transmission line and first negative data transmission line and configured to generate a first recovered data signal based on data signals communicated via the first positive data transmission line and first negative data transmission line; and
a data signal driving circuit including first through (M)-th data signal driving units (M is a natural number) respectively connected at different points along the first positive data transmission line and first negative data transmission line,
wherein the (K)-th data signal driving unit (K is a natural number which is less than or equal to M) is configured to generate at least one (K)-th positive data signal and at least one (K)-th negative data signal based on at least one (K)-th digital signal among the first digital signals and a data transmission distance between the (K)-th data signal driving unit and the first data output unit, and is configured to provide the at least one (K)-th positive data signal to the first positive data transmission line and the at least one (K)-th negative data signal to the first negative data transmission line.
23. The image sensor of claim 22, wherein the image sensor further includes a second positive data transmission line, a second negative data transmission line, and a second data output unit,
wherein the second data output unit is connected to the second positive data transmission line and second negative data transmission line and is configured to generate a second recovered data signal based on data signals communicated via the second positive data transmission line and second negative data transmission line,
wherein the data signal driving circuit further includes (M+1)-th through (M+N)-th data signal driving units (N is a natural number) respectively connected at different points along the second positive data transmission line and second negative data transmission line,
wherein the (L)-th data signal driving unit (L is a natural number which is bigger than M, and is less than or equal to M+N) is configured to generate at least one (L)-th positive data signal and at least one (L)-th negative data signal based on at least one (L)-th digital signal included in the second digital signals and a data transmission distance between the (L)-th data signal driving unit and the second data output unit, and is configured to provide the at least one (L)-th positive data signal to the second positive data transmission line and the at least one (L)-th negative data signal to the second negative data transmission line.
24. The image sensor of claim 23, wherein the image sensor further includes a link data signal driving unit,
wherein the link data signal driving unit generates a positive link data signal and a negative link data signal by driving the first recovered data signal, and provides the positive link data signal to the second positive data transmission line and the negative link data signal to the second negative data transmission line.
25. The image sensor of claim 24, wherein the first digital signals are outputted as the second recovered data signal through the first recovered data signal, the positive link data signal and the negative link data signal.
26. The image sensor of claim 23, wherein the image sensor further includes first through (M)-th pull-up devices and (M+1)-th through (M+N)-th pull-up devices,
wherein the first through (M)-th pull-up devices are respectively connected at different points along the first positive data transmission line and the first negative data transmission line, and the first through (M)-th pull-up devices correspond to the first through (M)-th data signal driving units respectively,
wherein the (M+1)-th through (M+N)-th pull-up devices are respectively connected at different points along the second positive data transmission line and the second negative data transmission line, and the (M+1)-th through (M+N)-th pull-up devices correspond to the (M+1)-th through (M+N)-th data signal driving units respectively,
wherein the (K)-th pull-up device generates a (K)-th positive pull-up signal and a (K)-th negative pull-up signal based on a data transmission distance between the (K)-th data signal driving unit corresponding to the (K)-th pull-up device and the first data output unit, and provides the (K)-th positive pull-up signal to the first positive data transmission line and the (K)-th negative pull-up signal to the first negative data transmission line,
wherein the (L)-th pull-up device generates a (L)-th positive pull-up signal and a (L)-th negative pull-up signal based on a data transmission distance between the (L)-th data signal driving unit corresponding to the (L)-th pull-up device and the second data output unit, and provides the (L)-th positive pull-up signal to the second positive data transmission line and the (L)-th negative pull-up signal to the second negative data transmission line.
27. (canceled)
28. The image sensor of claim 22, wherein the (K)-th data signal driving unit includes at least one (K)-th sub data signal driving unit and a (K)-th selection circuit,
wherein the (K)-th selection circuit selects an activated digital signal among the at least one (K)-th digital signal as a base signal, the at least one (K)-th sub data signal driving unit generates the at least one (K)-th positive data signal and the at least one (K)-th negative data signal by driving the base signal, and provides the at least one (K)-th positive data signal to the first positive data transmission line and the at least one (K)-th negative data signal to the first negative data transmission line,
wherein the number of the at least one (K)-th sub data signal driving unit is determined based on a data transmission distance between the (K)-th selection circuit and the first data output unit.
29. The image sensor of claim 28, wherein the number of the at least one (K)-th sub data signal driving unit is in proportion to the data transmission distance between the (K)-th selection circuit and the first data output unit.
30. (canceled)
31. The image sensor of claim 22, wherein a strength of the at least one (K)-th positive data signal and a strength of the at least one (K)-th negative data signal will vary in proportion to the data transmission distance.
32. The image sensor of claim 22, wherein the strength of the at least one (K)-th positive data signal and the strength of the at least one (K)-th negative data signal are controlled according to a respective size of a driving transistor included in the (K)-th data signal driving units.
33. The image sensor of claim 22, wherein the strength of the at least one (K)-th positive data signal and the strength of the at least one (K)-th negative data signal are controlled according to a strength of a current source included in the (K)-th data signal driving units.

1. A method of fabricating a crystalline wafer, comprising:
associating an interface layer with a support substrate;
associating a first layer in a strained state with the interface layer and support substrate;
associating a cap layer with the first layer;
melting the interface layer sufficiently to substantially uncouple the first layer from the support substrate to relax the first layer from the strained state to a relaxed state in which the first layer is more relaxed than in the strained state, wherein the cap layer protects and provides mechanical support for the first layer when the interface layer is melted; and
solidifying the interface layer with the first layer in the relaxed state to obtain a first crystalline wafer that includes the support substrate, the interface layer and the first layer in the relaxed state,
wherein the first layer comprises silicon germanium, and the interface layer comprises a higher concentration of germanium than the silicon germanium in the first layer.
2. The method of claim 1, wherein the interface material comprises germanium or silicon germanium.
3. The method of claim 1, wherein the interface layer is a thin film compared to the first layer.
4. The method of claim 1, wherein the interface layer is grown epitaxially on the support substrate.
5. The method of claim 1, wherein the first layer is patterned to sufficiently separate regions of the first layer for reducing constraints to the relaxation thereof between the regions.
6. The method of claim 1, further associating a surface of the first wafer opposite from the support substrate with a receiving substrate.
7. The method of claim 6, further comprising detaching at least a portion of the first layer from at least a portion of the support substrate for transferring to the receiving substrate.
8. The method of claim 1, wherein the support substrate has a support lattice parameter, and the first layer has a first nominal lattice parameter that is different than the support lattice parameter.
9. The method of claim 1, wherein the first layer is epitaxially grown in association with the interface layer.
10. The method of claim 1, wherein the first layer is substantially completely relaxed in the relaxed state.
11. A method of fabricating a crystalline wafer, comprising:
associating an interface layer with a support substrate;
associating a first layer in a strained state with the interface layer and support substrate;
associating a cap layer with the first layer;
melting the interface layer sufficiently to substantially uncouple the first layer from the support substrate to relax the first layer from the strained state to a relaxed state in which the first layer is more relaxed than in the strained state, wherein the cap layer protects and provides mechanical support for the first layer when the interface layer is melted; and
solidifying the interface layer with the first layer in the relaxed state to obtain a first crystalline wafer that includes the support substrate, the interface layer and the first layer in the relaxed state,
wherein the cap layer includes a sublayer thereof associated with the first layer, and wherein the sublayer protects the first layer from stress imparted by the cap when the interface layer is melted.
12. The method of claim 11, wherein the sublayer melts, but remains associated with the first layer, during the step of melting the interface layer.
13. The method of claim 1, wherein the cap layer is SiO2.
14. The method of claim 11, wherein the first layer is made of a first material, the support substrate is made of a support material, and the interface layer is made of an interface material that has an interface melting temperature that is lower than the melting temperatures of the support and first materials.
15. The method of claim 14, wherein the melting temperature of the interface material is at least about 5\xb0 C. lower than the melting temperature of each of the first and support material.
16. The method of claim 14, wherein:
the interface layer is melted by heating at least to the interface melting temperature a portion of the interface material sufficient to allow the first material to relax; and
the interface layer is solidified by cooling the interface material.
17. The method of claim 16, wherein the interface layer is cooled at a sufficiently rapid rate to solidify the interface layer sufficiently rapidly to avoid substantial diffusion of the interface and first materials therebetween.
18. The method of claim 16, wherein the interface layer is heated by applying heat to the first and interface layers and to the support substrate.
19. The method of claim 16, wherein the interface layer is heated by rapid thermal annealing.
20. The method of claim 1, which further comprises associating a boundary layer with the first layer such that the boundary layer is disposed between the first layer and the protective cap layer.
21. The method of claim 20, wherein the boundary layer is configured for separating the first layer from the protective cap layer to substantially prevent diffusion therebetween during the heating.
22. The method of claim 20, wherein the boundary layer is made of the interface material.
23. The method of claim 20, wherein the interface and boundary layers are thin films compared to the first layer.
24. The method of claim 20, further comprising melting the boundary layer to uncouple the first layer from the protective cap layer to inhibit or prevent the protective cap layer from impeding the relaxation of the first layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method comprising administering to a mammal a pharmaceutical composition containing a therapeutically effective dose of a compound for the treatment of altered function of the immune system such as autoimmune diseases including lupus erythematosis, dry eye disorders, rheumatoid arthritis, spondylitis, gouty arthritis, osteoarthritis, juvenile arthritis; said compound having a structure selected from
2. A method in accordance with claim 1 where the pharmaceutical composition is administered to the mammal for lupus erythematosis.
3. A method in accordance with claim 1 where the pharmaceutical composition is administered to the mammal for dry eye.
4. A method in accordance with claim 1 where the pharmaceutical composition is administered orally.
5. A method in accordance with claim 1 where the pharmaceutical composition is administered intraperitonially.
6. A method in accordance with claim 1 where the compound has the formula
7. A method in accordance with claim 1 where the compound has the formula
8. A method in accordance with claim 1 where the compound has the formula
9. A method in accordance with claim 1 where the compound has the formula
10. A method in accordance with claim 1 where the compound has the formula
11. A method in accordance with claim 2 where the pharmaceutical composition contains a therapeutically effective dose of a compound with the formula
12. A method in accordance with claim 2 where the pharmaceutical composition contains a therapeutically effective dose of a compound with the formula
13. A method in accordance with claim 2 where the pharmaceutical composition contains a therapeutically effective dose of a compound with the formula