Author: claimsbot

1. A mounting structure, comprising:
an electronic component including a first electrode;
a metal having a melting point of 130\xb0 C. or less;
a wiring substrate including a second electrode electrically connected to the first electrode via the metal; and
a preventing structure for preventing flowing-out of the metal in a melted state from a region where the first electrode and the second electrode are formed,
wherein the preventing structure is formed in at least one member selected from the electronic component and the wiring substrate.
2. The mounting structure according to claim 1, wherein the melting point of the metal is 40\xb0 C. or less.
3. The mounting structure according to claim 1, wherein the preventing structure includes a step formed in at least one member selected from the electronic component and the wiring substrate.
4. The mounting structure according to claim 1, wherein the preventing structure includes pillar structures formed in a surface of at least one member selected from the electronic component and the wiring substrate and regularly arranged.
5. The mounting structure according to claim 1, wherein:
the wiring substrate includes a dent into which the metal is injected;
the first electrode or the second electrode is formed on a bottom surface of the dent; and
an area of the dent in an in-plane direction of the surface of the wiring substrate is larger from the surface of the wiring substrate in a depth direction.
6. The mounting structure according to claim 1, wherein a material of the metal is an alloy containing at least one metal selected form gallium and indium.
7. The mounting structure according to claim 1, wherein:
the first electrode is formed on a first surface of the electronic component facing the wiring substrate; and
the first electrode has a length vertical to the first surface set larger than a length parallel to the first surface.
8. The mounting structure according to claim 1, wherein a shape of the first electrode is hollow.
9. The mounting structure according to claim 1, wherein a concave-convex shape having an aspect ratio of 0.01 or less is formed on a surface of at least one electrode selected from the first electrode and the second electrode.
10. A mounting method for mounting an electronic component including a first electrode on a wiring substrate including a second electrode, the method comprising:
supplying a metal having a melting point of 130\xb0 C. or less to at least one electrode selected from the first electrode and the second electrode; and
mounting the electronic component on the wiring substrate,
wherein the first electrode and the second electrode are electrically connected to each other via the metal, and
in at least one member selected from the electronic component and the wiring substrate, a preventing structure is formed to prevent flowing-out of the metal from a region where the first electrode and the second electrode are formed.
11. The mounting structure according to claim 3, wherein a length of the first electrode in a direction vertical to a surface of the electronic component is longer than a height of the step.
12. The mounting structure according to claim 4, wherein a pitch between centers of the pillar structures is 500 nm or less.
13. The mounting structure according to claim 4, wherein an aspect ratio of the pillar structure is 1 or higher.
14. The mounting structure according to claim 1, wherein at least one of the electronic component and the wiring substrate includes a dent into which the metal is injected, and the first electrode or the second electrode is formed on a bottom surface of the dent.
15. The mounting structure according to claim 1, wherein the electronic component and the wiring substrate are bonded by a resin on an outer periphery of the metal.
16. The mounting structure according to claim 1, wherein the first electrode includes a first electrode pad and first solder formed on a surface of the first electrode pad.
17. The mounting structure according to claim 1, wherein an aluminum layer is formed on the surface of at least one electrode selected from the first electrode and the second electrode.
18. The mounting structure according to claim 1, wherein a waveguide structure having an optical waveguide is formed on a surface of the wiring substrate, the electronic component includes an emission region, the electronic component and the waveguide structure are bonded together by a resin, and light that is emitted from the emission region is coupled with the waveguide.
19. The mounting structure according to claim 18, wherein of the end surfaces of the waveguide structure, an end surface that is located directly below the emission region is a slope end surface formed obliquely to the vertical direction of the surface of the wiring substrate.
20. The mounting structure according to claim 19, wherein a metal layer is formed on the slope end surface.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A secured checking cabin for use in checking people entering closed public regions, the checking cabin comprising:
an entrance passage defining a gap between two armored walls, the gap being dimensioned to prevent more than a single person at a time to walk between said walls side by side;
at least one armored capturing unit coupled to the entrance passage for receiving a person coming from the entrance passage, and being in communication with a closed public space;
an entrance mechanism for allowing the entrance of one person at a time to the entrance passage;
a no-return mechanism for preventing a person from returning back from the entrance passage;
an exit mechanism for releasing a person from the capturing unit to the closed public space;
a locking mechanism for locking both said entrance and exit mechanisms upon demand; and
at least one detector located in the entrance passage or in the capturing unit and being capable of detecting a presence of material suggestive of a potential danger.
2. Secured checking cabin according to claim 1, wherein the wall of the capturing unit is constructed of reinforced concrete containing about 200 Kg steel or iron per cubic meter of concrete.
3. Secured checking cabin according to claim 1, wherein the wall of the capturing unit is constructed of reinforced concrete of about 0.3 meter thickness.
4. Secured checking cabin according to claim 1, further comprising at least one secondary capturing unit coupled to the entrance passage for receiving a person coming from the entrance passage, and being coupled to a closed public region for dismissing a person to the public region.
5. Secured checking cabin according to claim 1, further comprising at least one X-ray detection unit having a conveyor for conveying and checking hand luggage of a person being checked.
6. Secured checking cabin according to claim 1, wherein the at least one detector comprises a metal detector or a smell detector.
7. Secured checking cabin according to claim 1, wherein the locking mechanism comprises a lockable carousel gate.
8. Secured checking cabin according to claim 1, further comprising an armored ceiling.
9. Secured checking cabin according to claim 1, further comprising an armored floor.
10. Secured checking cabin according to claim 1, permanently secured to a fixed construction near the entrance of a closed public region.
11. Secured checking cabin according to claim 1, further comprising a warning siren adapted to be actuated upon recognition of explosive inside the cabin.
12. Secured checking cabin according to claim 1, further comprising overcoming means for overcoming a suspected person.
13. Secured checking cabin according to claim 12, wherein the overcoming means is adapted to shock the suspected person.
14. Secured checking cabin according to claim 12, wherein the overcoming means comprises an electrical or chemical shocker adapted to shock the suspected person.
15. Secured checking cabin according to claim 12, wherein the overcoming means comprises a sedating gas releasing device.
16. Secured checking cabin according to claim 1, further comprising an explosive igniter adapted to trigger an explosion of explosives inside the cabin.
17. Secured checking cabin according to claim 16, wherein the explosive igniter comprises at least one from the group of chemical reactor injection means, high intensity light beam generator, microwave transducer, ultrasonic transducer, electric spark generator, and detonator shooting device.
18. Secured checking cabin according to claim 1, constructed as a standalone mobile unit and having anchoring means for securing the secured checking cabin at a site to be defended.
19. Secured checking cabin according to claim 1, further comprising metal detection unit sensitive to small metal objects such as knives bullets and the like, and a conveyor for receiving small personal objects of a person to be checked and for conveying them to meet their owner after he was checked by the unit, without influencing his checking.
20. A method for checking people entering closed public region, the method comprising:
(a) admitting people to a closed region one by one via an entrance passage to an exit passage;
(b) detecting for suspected hazardous material associated with each person during his progress between the entrance passage and the exit passage;
(c) if suspected hazardous material is detected on a suspect:
i) constraining the suspect to enter an armored capturing unit;
ii) preventing the suspect from exiting and preventing others from entering the armored capturing unit;
iii) subjecting the suspect to further checks and, if deemed necessary, neutralizing the suspect; and

(d) preventing people from exiting from the exit passage unless no hazardous material is detected or until suspected hazardous material is neutralized.

1. In a computing system for handling freehand drawn lines and shapes, a method for improving the appearance of the hand drawn lines and shapes comprising:
comparing a source line segment of a source line against a straight line and detecting a deviation value indicating deviation between the source line segment and the straight line;
straightening the source line segment to a straight line if the deviation value is below a predetermined threshold value;
evaluating the source line segment as an angle segment, when the deviation value is below a predetermined threshold value, by detecting whether the source line segment can be defined as an angle segment with two straight line segments and defining the line segment as an angle segment having two straight line segments intersecting at an angle if the source line segment can be defined with two straight line segments;
dividing the source line segment into new segments if the deviation value is not below the predetermined threshold value and the line segment can not be defined as an angle segment; and
repeating the acts of comparing, straightening, evaluating and dividing on the new segments until all segments of the source line have been straightened.
2. The method of claim 1 further comprising:
detecting if the source line closes on itself and thereby forms a shape;
improving the shape to a polyline shape if the source line closes on itself; and
improving the source line to a polyline if the source line does not close on itself.
3. The method of claim 2 further comprising:
comparing the polyline shape against reference shapes and improving the polyline shape to a reference shape most similar to the polyline shape.
4. The method of claim 1 wherein the act of detecting comprises:
finding a point of intersection between a first source line segment and a second source line segment making up the angle segment;
comparing the first source line segment to a straight line to determine if its deviation is below the predetermined threshold; and
comparing the second source line segment to a straight line to determine if its deviation is below the predetermined threshold.
5. The method of claim 4 wherein the act of defining comprises:
straightening the first line segment to a straight line and the second line segment to a straight line intersecting at the point of intersection if both the first and second source line segments have a deviation from a straight line below the predetermined threshold.
6. The method of claim 5 further comprising:
combining line segments and angle segments to form a polyline; and
detecting if the polyline line closes on itself and thereby forms a polyline shape.
7. The method of claim 6 further comprising:
comparing the polyline shape against basic reference shapes and improving the polyline shape to a transformed shape transformed from a basic shape most similar to the polyline shape; and
adjusting the transformed shape to a specific shape identified from the basic shape.
8. In a computing system, apparatus for reshaping freehand drawn source lines into a polyline, the apparatus comprising:
a segment compare module comparing a source line segment of a source line against a straight line and detecting a deviation value indicating deviation between the source line segment and the straight line;
a define line segment module straightening the source line segment to a straight line if the deviation value detected by the compare module is within a deviation threshold value indicating the source line segment is a straight line segment;
an evaluate module evaluating the source line segment as an angle segment, when the compare module detects the deviation value exceeds the deviation threshold value, the evaluate module detecting whether or not the source line segment has two straight line segments or more than two straight line segments;
a define angle segment module defining the source line segment as an angle segment made up of two straight lines intersecting at a point if the evaluate module detects two straight line segments;
a divide module dividing the source line segment into new source line segments if the evaluate module detects more than two straight line segments; and
each of the new source line segments being processed by the segment compare module and the evaluate module until the source line has been reshaped into a polyline.
9. The apparatus of claim 8 further comprising:
a polyline test module detecting if the polyline closes on itself and thereby forms a polyline shape.
10. The apparatus of claim 8 wherein the evaluate module comprises:
a intersection module finding a point of intersection between a first source line segment and a second source line segment making up the source line segment;
a split module splitting the source line segment at the point of intersection into the first source line segment and the second source line segment;
first split compare module comparing the first source line segment to a straight line to determine if its deviation is below the deviation threshold value;
second split compare module comparing the second source line segment to a straight line to determine if its deviation is below the deviation threshold value; and
a segment test module detecting that both the first and second source line segments have a deviation from a straight line below the deviation threshold value and generating a angle segment true condition indicating detection of an angle segment, and the segment test module detecting that at least one of the first and second source line segments have a deviation from a straight line exceeding the deviation threshold value, and generating an angle segment fail condition.
11. The apparatus of claim 10 wherein the define angle segment module is responsive to the angle segment true condition to straighten the first line segment to a straight line and the second line segment to a straight line intersecting at the point of intersection.
12. The apparatus of claim 10 wherein the divide module is responsive to the angle segment fail condition to divide the source line segment into two new source line segments for processing by the segment compare module and the evaluate module.
13. The apparatus of claim 8 further comprising:
a combine module combining straight lines from the define line module and angle segments from the define angle segment module to form a polyline.
14. The apparatus of claim 13 further comprising:
a closed line test module detecting if the polyline line closes on itself and thereby forms a polyline shape.
15. A computer program product readable by a computing system and encoding a computer program of instructions for executing a computer process for improving the appearance of the hand drawn lines and shapes comprising:
comparing a source line segment of a source line input into the computing system against a straight line and detecting a deviation value indicating deviation between the source line segment and the straight line;
straightening the source line segment to a straight line if the deviation value is below a predetermined threshold value;
evaluating the source line segment as an angle segment, when the deviation value is below a predetermined threshold value, by detecting whether the source line segment can be defined as an angle segment with two straight line segments and defining the line segment as an angle segment having two straight line segments intersecting at an angle if the source line segment can be defined with two straight line segments;
dividing the source line segment into new segments if the deviation value is not below the predetermined threshold value and the line segment can not be defined as an angle segment; and
repeating the acts of comparing, straightening, evaluating and dividing on the new segments until all segments of the source line have been straightened.
16. The computer program product of claim 15 wherein the computer process further comprises:
detecting if the source line closes on itself and thereby forms a shape;
improving the shape to a polyline shape if the source line closes on itself; and
improving the source line to a polyline if the source line does not close on itself.
17. The computer program product of claim 16 wherein the computer process further comprises:
comparing the polyline shape against reference shapes and improving the polyline shape to a reference shape most similar to the polyline shape.
18. The computer program product of claim 15 wherein the act of detecting in the computer process comprises:
finding a point of intersection between a first source line segment and a second source line segment making up the angle segment;
comparing the first source line segment to a straight line to determine if its deviation is below the predetermined threshold; and
comparing the second source line segment to a straight line to determine if its deviation is below the predetermined threshold.
19. The computer program product of claim 18 wherein the act of defining in the computer process comprises:
straightening the first line segment to a straight line and the second line segment to a straight line intersecting at the point of intersection if both the first and second source line segments have a deviation from a straight line below the predetermined threshold.
20. The computer program product of claim 15 wherein the computer process further comprises:
combining line segments and angle segments to form a polyline; and
detecting if the polyline line closes on itself and thereby forms a polyline shape.
21. The computer program product of claim 20 wherein the computer process further comprises:
comparing the polyline shape against basic reference shapes and improving the polyline shape to a transformed shape transformed from a basic shape most similar to the polyline shape; and
adjusting the transformed shape to a specific shape identified from the basic shape.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A dynamic random access memory (DRAM), comprising:
a substrate, having a trench and a deep trench located on one side of the trench;
a vertical transistor, a portion of which being disposed in the trench and another portion disposed over the substrate, the vertical transistor comprising:
a gate structure, disposed in the trench and located over the substrate;
a first doped region, disposed in the substrate on sidewalls and bottom of the trench; and
a second doped region, disposed in the substrate on top of the trench;
a deep trench capacitor, disposed in the deep trench, comprising:
a bottom electrode, disposed in the substrate on a bottom of the deep trench;
a capacitor dielectric layer, disposed on sidewalls and the bottom of the deep trench; and
an upper electrode, disposed in the deep trench and located on the capacitor dielectric layer; and
a buried strap, disposed in the substrate below the vertical transistor, adjoining to the first doped region and the upper electrode.
2. The DRAM as claimed in claim 1, wherein the gate structure comprises:
a gate, disposed on the substrate, filling the trench; and
a gate dielectric layer, disposed between the gate and the substrate.
3. The DRAM as claimed in claim 2, wherein the material of the gate dielectric layer comprises silicon oxide.
4. The DRAM as claimed in claim 1, wherein the buried strap comprises a buried doped region.
5. The DRAM as claimed in claim 1, wherein the buried strap is formed by performing a thermal diffusion process.
6. The DRAM as claimed in claim 1, further comprising a channel doped region disposed between the first doped region and the second doped region, and located in the substrate on sidewalls of the trench.
7. The DRAM as claimed in claim 1, further comprising a dielectric layer disposed between the gate structure and the first doped region.
8. The DRAM as claimed in claim 1, wherein the upper electrode comprises:
a first conductive layer, disposed on the bottom of the deep trench;
a second conductive layer, disposed on the first conductive layer; and
a third conductive layer, disposed on the second conductive layer, wherein a surface thereof is below the bottom of the trench.
9. The DRAM as claimed in claim 1, wherein the deep trench capacitor further comprises a collar dielectric layer disposed on sidewalls of the trench above the first conductive layer, and surrounding the second conductive layer.
10. The DRAM as claimed in claim 9, wherein the material of the collar dielectric layer comprises silicon oxide.
11. The DRAM as claimed in claim 8, wherein the material of the first conductive layer, the second conductive layer and the third conductive layer comprise doped polysilicon.
12. A manufacturing method for DRAM, comprising:
providing a substrate having a deep trench;
forming a deep trench capacitor in the deep trench, wherein the deep trench
capacitor comprises a bottom electrode, an upper electrode and a capacitor dielectric layer;
removing a portion of the upper electrode of the deep trench capacitor to form a first trench;
forming a buried strap in the substrate on one side of the upper electrode;
forming an isolation structure in the first trench to define an active region;
removing a portion of the substrate adjacent to the isolation-structure to form a second trench;
forming a first heavily doped region on the bottom of the second trench, wherein the first heavily doped region is electrically connected to the buried strap;
forming a dielectric layer on the bottom of the second trench;
forming a first lightly doped region on sidewalls of the second trench, wherein the first lightly doped region is electrically connected to the first heavily doped region;
forming a second lightly doped region in the substrate, wherein the second lightly doped region is adjacent to the second trench;
forming a gate structure on top of the substrate, wherein the gate structure fills the second trench; and
forming a second heavily doped region in the substrate, wherein the second heavily doped region is electrically connected to the second lightly doped region.
13. The manufacturing method for DRAM as claimed in claim 12, wherein the method of forming the gate structure comprises:
forming a gate dielectric layer to conformally cover the whole substrate;
forming a conductive layer on the gate dielectric layer, wherein the conductive layer fills the trench; and
patterning the conductive layer and the gate dielectric layer.
14. The manufacturing method for DRAM as claimed in claim 13, wherein the material of the gate dielectric layer comprises silicon oxide.
15. The manufacturing method for DRAM as claimed in claim 12, wherein the buried strap comprises a buried doped region.
16. The manufacturing method for DRAM as claimed in claim 12, wherein the method of forming the buried strap comprises a thermal diffusion process.
17. The manufacturing method for DRAM as claimed in claim 12, further comprising a method of forming a channel doped region in the substrate on sidewalls of the trench after the step of forming the first lightly doped region but before the step of forming the second lightly doped region.
18. The manufacturing method for DRAM as claimed in claim 12, wherein the method of forming the deep trench capacitor in the deep trench comprises:
forming a bottom electrode in the substrate on bottom of the deep trench;
forming a capacitor dielectric layer on surface of the deep trench;
filling a first conductive layer on bottom of the deep trench;
removing the capacitor dielectric layer not covered by the first conductive layer;
forming a collar dielectric layer on sidewalls of the deep trench not covered by the first conductive layer;
filling a second conductive layer in the deep trench to cover the first conductive layer;
removing a portion of the second conductive layer and a portion of the collar dielectric layer to ensure a surface of the second conductive layer being lower than a surface of the substrate; and
filling a third conductive layer in the deep trench, wherein the first conductive layer, the second conductive layer and the third conductive layer form the upper electrode.
19. The manufacturing method for DRAM as claimed in claim 18, wherein the collar dielectric layer comprises silicon oxide.
20. The manufacturing method for DRAM as claimed in claim 18, wherein the material of the first conductive layer, the second conductive layer and the third conductive layer comprise doped polysilicon.
21. The manufacturing method for DRAM as claimed in claim 12, wherein a bottom of the second trench is above a surface of the upper electrode of the trench capacitor.
22. The manufacturing method for DRAM as claimed in claim 12, wherein the method of forming the second lightly doped region comprises a tilt-angle ion implantation process.