Author: claimsbot

1. A gallium nitride type epitaxial crystal for field effect transistor, comprising:
a base substrate,
(a) a gate layer,
(b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer,
(c) a second buffer layer arranged on the base substrate side of the first buffer layer,
(d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having an opening at a part thereof, and
(e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer,
wherein a connection layer comprising a gallium nitride type crystal is arranged in the opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p-conductive type semiconductor crystal layer.
2. The crystal of claim 1, wherein the connection layer is a p-conductive type crystal.
3. The crystal of claim 1, wherein the connection layer has an end extending toward the first buffer layer, and the end does not extend beyond the first buffer layer.
4. The crystal of claim 1, wherein the connection layer is a crystal layer grown by selective growth on the p-conductive type semiconductor crystal layer exposed at the opening of the non-gallium nitride type insulating layer.
5. The crystal of claim 1, wherein the first buffer layer has an average dislocation density of 1\xd7105cm or less, except for the upper part of the opening of the non-gallium nitride type insulating layer.
6. The crystal of claim 1, wherein at least a part of the second buffer layer is a crystal layer formed by a selective lateral growth method using the gallium nitride type crystal provided in the opening as a base point.
7. The crystal of claim 1, wherein the insulating layer comprises silicone oxide or silicon nitride.
8. A field effect transistor formed using the crystal of claim 1, comprising:
a gate electrode arranged on an upper part of a gate layer, and
a source electrode and a drain electrode, arranged on both sides of the gate electrode and connected to the gate layer by ohmic connection,
wherein the opening or the connection layer formed in the opening is arranged so as to face the lower part of the source electrode, or the region between the source side edge of the gate electrode and the source electrode, and
the p-conductive type semiconductor crystal layer is connected to a hole-withdrawing electrode.
9. The field effect transistor of claim 8, wherein the second buffer layer is a crystal layer grown by a lateral growth method.
10. The field effect transistor of claim 8, wherein the interface between the first buffer layer and the gate layer is constituted of a semiconductor heterojunction interface.
11. A method for producing a gallium nitride type epitaxial crystal, comprising:
(i) a step of epitaxial growth of a p-conductive type semiconductor crystal layer onto a base substrate;
(ii) a step of formation of an insulating layer on the p-conductive type semiconductor crystal layer;
(iii) a step of formation of an opening in the insulating layer; and
(iv) a step of growth of a connection layer for electrically connecting the p-conductive type semiconductor crystal layer and a first buffer layer, in the opening using the insulating layer as a mask.
12. The method of claim 11, further comprising:
(v) a step of growth of a crystal layer by a selective lateral growth method using the gallium nitride type crystal grown in the opening as a base point on the insulating layer after growth of the connection layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for regulating the flow of a gas between a high-pressure zone and a zone of lower pressure, said apparatus comprising:
a hollow body having an axis;
a first chamber and a second chamber, said chambers defined within said body;
a nozzle within said body and separating said chambers, said nozzle defining a passage for the passage of gas between said chambers; and
a stem movable axially within said passage, extending at least partially into said first chamber, wherein axial movement of said stem varies the position of said stem in relation to said nozzle, said stem comprising:
an o-ring seat disposed in an annular pocket on said stem and contactable with said nozzle to seal said passage against the passage of gas;
a distal stem portion extending at least partially into said first chamber and a proximate stem portion within said second chamber and extending into said passage, said distal stem portion connectable to said proximate stem portion to squeeze at least part of said o-ring there-between; and
an axial duct defined in said stem for venting said gas into an interior portion of said pocket;
wherein said axial duct comprises a central duct in said proximate stem portion in linear registration, and fluid communication, with a central duct in said distal stem portion.
2. An apparatus according to claim 1 further comprising at least one branch duct defined in said distal stem portion, said at least one branch duct extending generally radially between said central duct in said distal stem portion and said interior portion of said pocket, wherein said gas flows through said at least one branch duct for balancing pressures between said pocket and said second chamber.
3. An apparatus according to claim 1 wherein when connected, said distal stem portion and said proximate stem portion define at least a portion of said annular pocket for receiving said o-ring.
4. An apparatus according to claim 1 further comprising an internal component insertable into said distal stem portion and said proximate stem portion for joining said stem portions together, said internal component comprising:
a longitudinal central duct along the length of said internal component;
an exterior seat portion for receiving thereon said o-ring;
an external groove in fluid communication with said longitudinal central duct and with said exterior seat portion, wherein said gas flows along said groove for balancing pressures between said pocket and said second chamber.
5. An apparatus for regulating the flow of a gas between a high-pressure zone and a zone of lower pressure, said apparatus comprising:
a hollow body having an axis;
a first chamber and a second chamber defined within said body;
a nozzle within said body and separating said chambers, said nozzle defining a passage for the passage of gas between said chambers; and
a stem movable axially within said passage and comprising:
a distal portion extending at least partially into said first chamber;
a proximate portion at least partially within said second chamber and extending into said passage, wherein axial movement of said stem varies the position of said proximate portion in relation to said nozzle;
an o-ring seat disposed in a pocket defined in said stem and contactable with said nozzle to seal said passage against the passage of gas; and
vent means for balancing pressures between said pocket and said second chamber only, said vent means comprising a single axial duct defined in said stem between said second chamber and an interior portion of said pocket.
6. An apparatus according to claim 5, wherein said distal stem portion extends at least partially into said first chamber and said proximate stem portion is movable within said second chamber and extends into said passage, said distal stem portion connectable to said proximate stem portion to squeeze at least part of said o-ring in said pocket.
7. An apparatus according to claim 6 wherein said axial duct comprises a central duct in said proximate stem portion in linear registration, and fluid communication, with a central duct in said distal stem portion.
8. An apparatus according to claim 7 further comprising at least one branch duct defined in said distal stem portion, said at least one branch duct extending generally radially between said central duct in said distal stem portion and said interior portion of said pocket, wherein said gas flows through said at least one branch duct for balancing pressures between said pocket and said second chamber.
9. An apparatus for regulating the flow of a gas between a high-pressure zone and a zone of lower pressure, said apparatus comprising:
a hollow body having an axis;
a first chamber and a second chamber, said chambers defined within said body;
a nozzle within said body and separating said chambers, said nozzle comprising a convexly curved wall, and defining a passage for the passage of gas between said chambers; and
a stem movable axially within said passage and comprising:
a distal portion extending at least partially into said first chamber;
a proximate portion within said second chamber and extending into said passage, wherein axial movement of said stem varies the position of said proximate portion in relation to said nozzle; and
an o-ring seat in a pocket between said proximate portion and said distal portion of said stem and contactable with said nozzle to seal said passage against the passage of gas; and
an axial duct for balancing pressures between an interior of said pocket and said second chamber;
wherein said pocket interior is substantially isolated from said first chamber.

1. A fluidized bed catalytic cracking apparatus (FCC) for treating gaseous hydrocarbons from a cracking catalyst, the apparatus comprising:
i) a catalyst regenerator for regenerating catalyst by contact with oxygen containing gas to produce regenerated catalyst;
ii) a standpipe for recycling the regenerated catalyst from the catalyst regenerator to a cracking zone;
iii) a stripping means for stripping inert gases from the regenerated catalyst as the catalyst flows from the regenerator;
iv) a riser for receiving the stripped catalyst; and
v) a FCC catalyst charge heater for preheating FCC feedstocks;
vi) wherein the FCC catalyst charge heater is a catalyst cooler;
vii) wherein the FCC catalyst charge heater is used in conjunction with an FCC catalyst heater in the regenerator; and
viii) wherein stripping steam is used to control the heat transfer coefficient of the catalyst charge heater to achieve the desired feed temperature.
2. An FCC apparatus according to claim 1 wherein the FCC catalyst charge heater is configured to maintain unit heat balance in the catalytic cracking unit.
3. An FCC apparatus according to claim 1 wherein the FCC catalyst charge heater is a catalyst cooler external to the regenerator.
4. An FCC apparatus according to claim 1 wherein the FCC catalyst charge heater is a catalyst cooler external to the regenerator with a flowthrough or backmixed catalyst flow configuration.
5. An FCC apparatus according to claim 1 wherein the FCC catalyst charge heater further comprises a feed inlet for FCC feed to enter the catalyst cooler and a feed outlet for the FCC feed to exit the catalyst cooler.
6. An FCC apparatus according to claim 1 wherein the use of the catalyst charge heater increases the liquid volume yield of transportation fuels.
7. An FCC apparatus according to claim 1 further comprising a catalyst outlet for conveying catalyst from the FCC catalyst charge heater to the regenerator.
8. An FCC apparatus according to claim 1 wherein the use of the catalyst charge heater debottlenecks the FCC capacity thereby allowing higher feed rates at constant CO2 emissions.
9. An FCC apparatus according to claim 1 wherein the use of the catalyst charge heater results in lower coke yield decreasing NOx, SOx and COx emissions.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A fragrance emitting patch comprising:
a primary layer having a top and a bottom surface;
a secondary layer having a top and a bottom surface; and
an intermediate layer arranged between the primary and secondary layers, the intermediate layer provided with an oil based fragrance; and
wherein the intermediate layer is a mineral oil polymer blend microporous film.
2. The fragrance emitting patch according to claim 1, further comprising a positioning adhesive arranged on the bottom surface of the secondary layer.
3. The fragrance emitting patch according to claim 1, wherein the intermediate layer is provided with the fragrance in an amount greater than about 3 gsm.
4. The fragrance emitting patch according to claim 3, wherein the intermediate layer is provided with the fragrance in an amount within the range of about 3 gsm and about 15 gsm.
5. The fragrance emitting patch according to claim 1, wherein the primary layer is a nonwoven material.
6. The fragrance emitting patch according to claim 2, wherein an absolute difference of a Hildebrand solubility parameter of the positioning adhesive and a Hildebrand solubility parameter of the fragrance is greater than 1.5.
7. The fragrance emitting patch according to claim 1, wherein the primary layer is secured to the secondary layer in an adhesive-free manner thereby entrapping the intermediate layer between the primary and secondary layers.
8. The fragrance emitting patch according to claim 1, wherein the primary layer is secured to the secondary layer by means of a construction adhesive.
9. The fragrance emitting patch according to claim 8, wherein an absolute difference of a Hildebrand solubility parameter of the construction adhesive and the Hildebrand solubility parameter of the fragrance is greater than 1.5.
10. The fragrance emitting patch according to claim 1, wherein the intermediate layer is secured to at least one of the primary layer and the secondary layer by means of a construction adhesive.
11. The fragrance emitting patch according to claim 10, wherein an absolute difference of a Hildebrand solubility parameter of the construction adhesive and the Hildebrand solubility parameter of the fragrance is greater than 1.5.