Author: claimsbot

1. A body temperature detector comprising:
a radiation sensor which views a target surface area of the body and provides a radiation sensor output;
an ambient temperature sensor; and
electronics coupled to the radiation sensor and ambient temperature sensor, which compute an internal temperature of the body as a function of the ambient temperature and a target surface temperature derived from the radiation sensor output, the function including a difference of the target surface temperature and the ambient temperature weighted by a weighting coefficient, the weighting coefficient being varied with the sensed target surface temperature.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A wireless communication device, comprising:
a baseband processor for processing ingoing and outgoing digital communication signals;
a plurality of processing cores for transmitting and receiving radio frequency (RF) signals wherein each processing core includes a receiver front end and a transmitter front end;
the receiver front end of each processing core further including:
a plurality of filtering and amplification blocks disposed within an ingoing signal path; and
a plurality of received signal strength indicator (RSSI) blocks coupled to receive an ingoing analog signal from a corresponding plurality of nodes disposed throughout the ingoing signal path, each of the plurality of received signal strength indicator blocks producing a signal strength indication; and

a multiplexed n-bit wide gain control bus operably coupled to the plurality of filtering and amplification blocks for carrying gain control commands to the plurality of filtering and amplification blocks within each of the plurality of processing cores.
2. The wireless communication device of claim 1 wherein each the plurality of RSSI blocks are operably coupled to a multiplexer that is further coupled to receive an RSSI select signal and wherein the baseband processor determines a total amount of maximum gain for a selected ingoing signal path that avoids clipping at an output analog-to-digital converter subsequently specifies gain settings through the multiplexed n-bit wide gain control bus to amplification blocks within the plurality of processing cores.
3. The wireless communication device of claim 1 further including a multiplexed low-pass filter bandwidth select signal that is multiplexed to low pass filters operably disposed on the receive paths for the plurality of processing cores.
4. The wireless communication device of claim 1 further including a dedicated low-pass filter Q select signal that is produced to at least one low pass filter within each of the processing cores.
5. The wireless communication device of claim 1 further including a dedicated high-pass bandwidth select signal that is produced to at least one high-pass variable gain amplifier within the processing cores.
6. The wireless communication device of claim wherein the baseband processor generates a plurality of strobes to a plurality of circuit blocks within the processing cores wherein each of the circuit blocks is operatively coupled to an associated strobe and only latches data upon activation of the associated strobe.
7. The wireless communication device of claim 1 wherein the baseband processor is operable to change a low pass filter Q for a low pass filter on one of the first and second cores whenever a gain setting is modified for an amplifier on the corresponding plurality of cores that is disposed upstream of the low pass filter.
8. The wireless communication device of claim 7 wherein the amplifier is one of a low noise amplifier or a high pass variable gain amplifier.
9. The wireless communication device of claim 1 wherein the baseband processor is operable to change a low pass filter Q on one of the plurality of cores whenever a bandwidth is modified for a high pass variable gain amplifier that is disposed upstream of a low pass filter.
10. The wireless communication device of claim 1 wherein the baseband processor is operable to decrease a low pass filter Q upon a specified change to an amplifier gain or bandwidth for an amplifier disposed upstream of a low pass filter to provide a faster settle time and is further operable to subsequently increase the low pass filter Q to provide improved filtering.
11. A wireless communication device, comprising:
a baseband processor for processing ingoing and outgoing digital communication signals;
first and second front end cores each further comprising a transmitter front end for processing and transmitting outgoing RF signals based upon the outgoing digital communication signals and a receiver front end for receiving ingoing RF signals and for processing the ingoing RF signals to produce the ingoing digital communication signals;
at least one antenna for transmitting the outgoing and receiving the ingoing RF signals operably coupled to the first and second front end cores;
a plurality of amplifiers and filters operably disposed in a receive path of each of the first and second front end cores;
a baseband processor-to-multi-core interface operable to receive ingoing signals and received signal strength indications from the receiver front ends of the first and second front end cores and operable to produce control commands and a plurality of strobes to control data latching to receiver front end amplifiers and filters of the first and second front end cores; and
a multiplexed n-bit wide gain control bus operably coupled to carry control commands and the plurality of strobes to filtering and amplification blocks within each of the first and second front end cores.
12. The wireless communication device of claim 11 further including a multiplexed bandwidth select signal path operable to conduct a first bandwidth select signal to a plurality of filters.
13. The wireless communication device of claim 11 further including at least one dedicated bandwidth select signal path operable to directly conduct a second bandwidth select signal path to a corresponding filter disposed on one of the first and second front end cores.
14. The wireless communication device of claim 11 further including a plurality of strobe signal paths operable to directly conduct one of a plurality of strobes to prompt associated circuit elements to latch data.
15. The wireless communication device of claim 11 wherein the baseband processor includes associated logic for:
detecting a received preamble having a training sequence;
during the training sequence, determining whether clipping is occurring at an output of a radio front end of at least one of the first and second front end cores;
selecting and evaluating received signal strength indications at a plurality of nodes disposed throughout the radio front end;
determining gain level settings for a low noise amplifier and first and second high pass variable gain amplifiers;
determining whether to modify at least one high pass variable gain amplifier bandwidth;
determining whether to modify a low pass filter Q setting at the same time a new gain level setting is specified;
generating control commands to a multiplexer to produce a gain level signal to a specified group of amplifiers within one of the first and second front end cores; and
generating at least one strobe of a plurality of strobes to prompt a specified amplifier of the specified group of amplifiers to latch the gain level signal.
16. The wireless communication device of claim 15 wherein the baseband processor further includes logic for determining whether to front end load or back end load a portion of total gain.
17. A method for control amplification and filtering parameters for a plurality of amplification and filtering devices within a multi-core wireless communication device, comprising:
selecting a destination core of a plurality of cores of the multi-core wireless communication device;
generating a plurality of RSSI select signals for each of a plurality of in-phase and quadrature phase signal paths at a first frequency band and for each of a plurality of in-phase and quadrature phase signal paths at a second frequency band;
receiving a plurality of received signal strength indications as measured by a plurality of RSSI blocks operably coupled to receive ingoing signals from a corresponding plurality of nodes disposed in a received signal path;
determining at least one wideband signal magnitude;
determining at least one narrowband signal magnitude; and
determining gain settings for each of the plurality of amplification devices for each of a plurality of in-phase and quadrature phase signal paths at the first frequency band and for each of a plurality of in-phase and quadrature phase signal paths at the second frequency band.
18. The method of claim 17 further including detecting a received preamble having a training sequence and, during the training sequence, determining whether clipping is occurring at an output of a radio front end of at least one of the plurality of cores.
19. The method of claim 18 further including selecting and evaluating received signal strength indications at the plurality of nodes disposed throughout the radio front end and determining gain level settings for a low noise amplifier and for first and second high pass variable gain amplifiers.
20. The method of claim 18 further including generating one of a plurality of strobes to at least one amplifier or filter of the selected core to specify an amplifier or filter setting, respectively.

1. A lighting unit, comprising:
at least one lamp; and
a hollow box;
wherein the hollow box comprises:
a heat-conducting wall in thermal contact with the at least one lamp;
a rear wall extending essentially parallel to the heat-conducting wall and comprising at least one first opening;
a top sidewall comprising at least one second opening disposed closer to the rear wall than to the heat-conducting wall; and
a bottom sidewall comprising at least one third opening disposed closer to the rear wall than to the heat-conducting wall,
wherein the top sidewall and the bottom sidewall are disposed between the rear wall and the heat-conducting wall.
2. The lighting unit as claimed in claim 1, wherein the heat-conductive wall comprises a reflective layer against which the at least one lamp rests.
3. The lighting unit as claimed in claim 2, wherein the reflective layer is one of a coating on the heat-conductive wall or a thin foil.
4. The lighting unit as claimed in claim 1, wherein a side of the heat-conductive wall facing an interior of the hollow box is black.
5. The lighting unit as claimed in claim 1, wherein the rear wall comprises at least one projection protruding into an interior of the hollow box.
6. The lighting unit as claimed in claim 1, wherein a total area of the at least one first opening is smaller than a remaining area of the rear wall.
7. The lighting unit as claimed in claim 1, wherein the at least one first opening, the at least one second opening, and the at least one third opening are fashioned respectively as slots.
8. The lighting unit as claimed in claim 7, wherein the at least one first opening is longitudinally oriented between the top sidewall and the bottom sidewall.
9. The lighting unit as claimed in claim 1,
wherein the rear wall comprises a plurality of first openings, the top sidewall comprises a plurality of second openings, and the bottom sidewall comprises a plurality of third openings,
wherein, in areas where the rear wall and the top sidewall adjoin, corresponding first openings and second openings merge to form respective single top openings, and
wherein, in areas where the rear wall and the bottom sidewall adjoin, corresponding first openings and third openings merge to form respective single bottom openings.
10. The lighting unit as claimed in claim 1, wherein the hollow box has a two-part construction, wherein a first part comprises the heat-conducting wall and a second part comprises the rear wall, the top sidewall and the bottom sidewall; and
wherein the rear wall, the top sidewall and the bottom sidewall are made of a material that conducts heat poorly relative to a material that forms the heat-conducting wall.
11. The lighting unit as claimed in claim 1, wherein the at least one lamp is a fluorescent lamp connected to a driver circuit with a low output impedance.
12. The lighting unit as claimed in claim 11,
wherein the fluorescent lamp is connected directly to an inductive output transformer of the driver circuit; and
wherein the output transformer is configured to limit transmitted power of the output transformer.
13. The lighting unit as claimed in claim 1, wherein the top sidewall and the bottom sidewall comprise no further openings disposed between the second opening and the heat-conducting wall, and the third opening and the heat-conducting wall, respectively.
14. The lighting unit as claimed in claim 1, wherein the lighting unit is configured to provide backlighting for a flat panel display device that is operated in substantially a vertical working position.
15. The lighting unit as claimed in claim 1, wherein the at least one lamp comprises a plurality of the lamps.
16. The lighting unit as claimed in claim 1, wherein the at least one first opening comprises a plurality of the openings.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of depositing a strained metal silicon nitride film on a substrate in a process chamber, comprising:
exposing the substrate to a gas comprising a metal precursor;
exposing the substrate to a gas comprising a silicon precursor;
exposing the substrate to a gas comprising a first nitrogen precursor configured to react with the metal precursor or the silicon precursor with a first reactivity characteristic; and
exposing the substrate to a gas comprising a second nitrogen precursor configured to react with the metal precursor or the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the metal silicon nitride film formed on the substrate changes to provide the strained metal silicon nitride film.
2. The method of claim 1, comprising:
a) exposing the substrate to a gas pulse comprising the metal precursor;
b) exposing the substrate to a gas pulse comprising the first nitrogen precursor or a gas pulse comprising the first nitrogen precursor and a second nitrogen precursor in a first ratio;
c) exposing the substrate to a gas pulse comprising the silicon precursor;
d) exposing the substrate to a gas pulse comprising the second precursor when step b) exposed the substrate to the first nitrogen precursor or a gas pulse comprising the first and second nitrogen precursors in a second ratio different from the first ratio when step b) exposed the substrate to the first and second nitrogen precursors in the first ratio; and
e) repeating steps a)-d) a predetermined number of times.
3. The method of claim 2, further comprising sequentially performing steps a) and b) a first number of times prior to performing steps c) and d).
4. The method of claim 2, further comprising sequentially performing steps c) and d) a second number of times prior to repeating steps a) and b) in step e).
5. The method of claim 2, further comprising sequentially performing steps a) and b) a first number of times prior to performing steps c) and d), and sequentially performing steps c) and d) a second number of times prior to repeating steps a) and b) in step e).
6. The method of claim 5, wherein the first number of times or the second number of times, or both the first and second number of times, are varied during the deposition of the strained metal silicon nitride film.
7. The method of claim 2, wherein step b) comprises exposing the substrate to a gas pulse comprising the first and second nitrogen precursors in a first ratio, and step d) comprises exposing the substrate to the first and second nitrogen precursors in a second ratio different from the first ratio.
8. The method of claim 7, wherein the first ratio or the second ratio, or both the first and second ratio, are between a ratio corresponding to substantially pure first nitrogen precursor and a ratio corresponding to substantially pure second nitrogen precursor during deposition of the strained metal silicon nitride film.
9. The method of claim 1, wherein the metal precursor comprises a meal element selected from alkaline earth elements rare earth elements, Group III, Group IIIB, Group IVB, Group VB, and Group VIB of the Periodic Table, or a combination of two or more thereof.
10. The method of claim 1, wherein the first and second nitrogen precursors are selected from NH3, N2H4, and C1-C10 alkyl hydrazine compounds.
11. The method of claim 1, wherein the silicon precursor comprises silane (SiH4), disilane (Si2H6), monochlorosilane (SiClH3), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), hexachlorodisilane (Si2Cl6), diethylsilane, alkylaminosilane compounds or a combination of two or more thereof.
12. The method of claim 2, further comprising purging or evacuating, or both purging and evacuating the process chamber after each of steps a)-d).
13. The method of claim 2, wherein steps a) and b) have at least partial temporal overlap.
14. The method of claim 2, wherein steps c) and d) have at least partial temporal overlap.
15. The method of claim 2, wherein steps a) and b) have at least partial temporal overlap and steps c) and d) have at least partial temporal overlap.
16. The method of claim 1, comprising:
exposing the substrate to a gas pulse comprising the metal precursor and the first and second nitrogen precursors, wherein the first and second nitrogen precursors are present in a first ratio; and
exposing the substrate to a gas pulse comprising the silicon precursor and the first and second nitrogen precursors, wherein the first and second nitrogen precursors are present in a second ratio, and wherein the first ratio or the second ratio, or both the first and second ratio are varied during deposition of the strained metal silicon nitride film.
17. The method of claim, 16, wherein the first gas pulse further comprises a silicon precursor and the second gas pulse further comprises a metal precursor.
18. The method of claim 16, wherein the first ratio or the second ratio, or both the first and second ratios are varied between a ratio corresponding to substantially pure first nitrogen precursor and a ratio corresponding to substantially pure second nitrogen precursor.
19. The method of claim 16, wherein the first ratio or the second ratio or both the first and second ratios are varied monotonically.
20. The method of claim 1, comprising:
exposing the substrate to a gas pulse comprising the metal precursor, the silicon precursor, and the first and second nitrogen precursors, wherein a ratio of the first and second nitrogen precursors is varied during deposition of the strained metal silicon nitride film.
21. The method of claim 20, wherein the ratio is varied between a first ratio corresponding to substantially pure first nitrogen precursor and a second ratio corresponding to substantially pure second nitrogen precursor.
22. The method of claim 20, wherein the ratio is varied monotonically.
23. The method of claim 1, wherein the exposing steps have at least partial temporal overlap.
24. A semiconductor device comprising a strained metal silicon nitride film deposited according to the method of claim 1.
25. The method of claim 1, further comprising activating a plasma in the process chamber during one or more of the exposing steps.
26. The method of claim 11, wherein the alkylaminosilane comprises di-isopropylaminosilane, bis(tert-butylamino)silane, tetrakis(dimethylamino)silane, tetrakis(ethylmethylamino)silane, tetrakis(diethylamino)silane, tris(dimethylamino)silane, tris(ethylmethylamino)silane, tris(diethylamino)silane, or tris(dimethylhydrazino)silane, or a combination of two or more thereof.