Author: claimsbot

What is claimed is:

1. A toroidal-type continuously variable transmission, comprising:
an input side disk;
an output side disk disposed concentric with the input side disk;
a plurality of trunnions interposed between the input side disk and the output side disk and swingable about pivot shafts situated at twisted positions with respect to the axes of the input side and output side disks;
a plurality of displacement shafts disposed on the trunnions one by one so as to project from inner surfaces of respective trunnions;
a plurality of power rollers disposed on the trunnions one by one and held between inner surfaces of the input side and output side disks so as to be rotatably supported on respective displacement shafts;
a plurality of rods having respective base end portions connected and fixed to one-end portions of the trunnions, the rods being disposed concentric with the pivot shafts of the trunnions; and,
a plurality of actuators for shifting the rods in the axial direction thereof,
wherein the trunnion and the rod are integrally formed of a single material.
2. The toroidal-type continuously variable transmission as set forth in claim 1, wherein the trunnion and the rod are integrally formed of the single material by forging or by casting.
3. The toroidal-type continuously variable transmission as set forth in claim 1, wherein the trunnion and the rod are produced by finish working an integral body, after forming the integral body of an iron-system alloy by forging or casting
4. The toroidal-type continuously variable transmission as set forth in claim 3, wherein the finish working includes cutting.
5. The toroidal-type continuously variable transmission as set forth in claim 3, wherein the outer peripheral surfaces of the rod and the pivot shafts formed in the one-end portions of the trunnions are worked with the outer peripheral surfaces of the pivot shafts formed in the-other-end portions of the trunnions as the standards.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A manufacturing method of an electronic diaper comprising provision of a sensor feeding band, said sensor feeding band having a continuous band body, said continuous band body having a plurality of sensor bodies spaced apart equidistantly with a tear line formed between every two abutting ones of said sensors, each said sensor able to be torn off along said tear line, said sensor attached on an inner surface of an upper or a lower dry layer of a diaper body with glue or by fusing and adhering operated by a high frequency machine so as to facilitate automatically manufacturing said electronic diaper.
2. The manufacturing method of electronic diaper as claimed in claim 1, wherein a sensor feeding box is provided for placing numerous sensors piled on one another in its interior, and each said sensor is attached by automatic equipment on the inner surface of the upper or the lower dry layer of each said diaper body with glue or by fusing and adhering operated by a high frequency machine to conveniently and automatically manufacturing said electronic diaper.
3. An electronic diaper comprising a diapers body, said diaper body provided at least with an upper and a lower dry layer, an absorbing layer sandwiched between said two dry layers, said upper or lower dry layer attached with a sensor, said sensor able to extend to an outer side of said diaper, said sensor having a connecting member.
4. The electronic diaper as claimed in claim 3, wherein said sensor is formed with a lower film layer having plural electric conductors disposed on its upper surface, with an upper film layer coated closely on the upper surface of said lower film layer to make up said sensor soft and having good conductivity.
5. The electronic diaper as claimed in claim 3, wherein said sensor is formed with a lower film layer provided on its upper surface with plural electric conductors, becoming soft and having good conductivity.
6. The electronic diaper as claimed in claim 3, wherein an outer hang display is provided to be connected with said diaper body and placed at a place where an attendant can check it easily.
7. An electronic diaper comprising:
a diaper body provided with an upper day layer, a lower day layer and an absorbing layer sandwiched between said upper and said lower dry layer:
a sensor attached on said upper dry layer or on said lower dry layer and having a connecting member; and,
a controller having a socket hole with two terminals provided in its interior, said connecting member of said sensor inserted in said socket hole of said controller so that said controller may receive signals from said sensor for producing warning signals of the condition of said diaper body.
8. The electronic diaper as claimed in claim 7, wherein said controller can clasp conductors of said sensor for receiving signals from said sensor and accordingly produces warning signals of the witted condition of said diaper body.
9. An electronic diaper comprising:
a diaper consisting of an upper dry layer, a lower dry layer and an absorbing layer sandwiched between said two dry layers;
a controller having a socket hole provided with two terminals in its interior;
a sensor having a connecting member, said connecting member inserting in said socket hole of said controller, said sensor able to be attached in said diaper body for sensing the condition of said diaper body.
10. The electronic diaper as claimed in claim 9, wherein said sensor is wrapped with an absorbing material.
11. An electronic diaper comprising
a diaper provided at least with an upper dry layer, a lower dry layer and an absorbing layer sandwiched between said two dry layers,
a plurality of conductors of said sensor printed on said upper dry layer andor said lower dry layer, said sensor able to be connected with a controller so that said controller may receive signals from said sensor to produce warning signals of the condition of said diaper body.
12. An electronic diaper comprising;
a diaper body consisting of an upper dry layer, a lower dry layer, and an absorbing layer sandwiched between said two dry layers;
a sensor attached on said upper dry layer or said lower dry layer, said sensor connected with a controller;
said controller provided with a control circuit in its interior, said control circuit constituted with an IC, said IC burned with a driving program, said controller receiving signals sensed by said sensor, said controller
Calculating and converting said signals into warning signals, which is then transmitted to an LED lamp to be turned on to light up, or to a buzzer to give out sound, or to an LCD display to indicate the time of said diaper body becoming wet so that said diaper body may be replaced with a new one by an attendant.
13. The electronic diaper as claimed in claim 12 wherein said control circuit has a plurality of signal sources and plural detecting modes in correspondence with said sensor consisting of three conductors; two of said three conductors are electrically connected with each other by urine flowing through a hole formed in an upper film layer to sense a first stage of wetting condition of said diaper body and producing a first signal of wetting condition of said diaper body to be transmitted to said controller, which then produces a first warning signal; the other two of said three conductors may be electrically connected by urine flowing through another hole formed in said upper film layer to sense a second stage wetting condition of said diaper body and to produce a second signal of wetting condition of said diaper body so that said controller may receive said second signal to produce a second warning signal for attaining the object of replacing said diaper body with a new one.
14. The electronic diaper as claimed in claim 12, wherein said controller supplies said sensor with a very small and continuous power for said sensor to sense the condition of said diaper continuously; or said controller supplies said sensor with a very small and intermittent power for said sensor to carry out sensing the condition of said diaper intermittently, and once wetness of said diaper is sensed, said controller will immediately cut off the power of said sensor, but said warning signal is still given out until said diaper is replaced with a new one.

What is claimed is:

1. A method for providing contrast for alignment marks after a blanket metal deposition, comprising the steps of:
providing at least one trench in a first region and at least one trench in an alignment mark region of a semiconductor wafer;
depositing a first metal on the wafer;
blocking the first metal from filling the at least one trench in the alignment mark region to maintain the at least one trench in the alignment mark region in an unfilled state;
planarizing the wafer to remove the first metal from a top surface; and
blanket depositing a second metal layer on the first region and the alignment mark region such that the at least one trench in the alignment mark region is suitable for use as a scattering alignment mark.
2. The method as recited in claim 1, wherein the step of blocking the first metal deposition includes the steps of:
forming a seed layer over the wafer;
patterning a resist layer over the seed layer such that the seed layer in the at least one trench in the alignment mark region is exposed; and
etching the seed layer from the at least one trench in the alignment mark region such that when the first metal layer leaves the at least one trench in the alignment mark region unfilled after the deposition of the first metal layer.
3. The method as recited in claim 1, further comprising the step of scanning the wafer with laserlight to determine the position of the at least one trench in the alignment mark region.
4. The method as recited in claim 3, wherein the step of scanning the wafer with laserlight includes performing a laserlight scattering alignment.
5. The method as recited in claim 1, wherein the step of blanket depositing the second metal layer includes blanket depositing the second metal layer to a thickness less than an amount needed to completely fill the at least one trench in the alignment mark region.
6. The method as recited in claim 1, wherein the step of blocking the first metal deposition includes the steps of:
forming a block layer in the first region and in the alignment mark region to fill the at least one trench; and
patterning the block layer to remove the block layer from portions of the wafer other than the at least one trench in the alignment mark region.
7. A method for providing contrast for alignment marks after a blanket metal deposition, comprising the steps of:
etching at least one trench in a first region and at least one trench in an alignment mark region of a semiconductor wafer;
forming a seed layer in the first region and the alignment mark region;
removing the seed layer from the at least one trench in the alignment mark region;
depositing a metal layer on the semiconductor wafer to fill the at least one trench in the first regions without filling the at least one trench in the alignment mark region;
planarizing the metal layer and the seed layer; and
blanket depositing a second metal layer on the first region and the alignment mark region such that the at least one trench in the alignment mark region is suitable for use as a scattering alignment mark.
8. The method as recited in claim 7, wherein the step of removing the seed layer includes the steps of:
patterning a resist layer such that the at least one trench in the alignment mark region is exposed; and
etching the seed layer from the at least one trench in the alignment mark region.
9. The method as recited in claim 7, further comprising the step of scanning the wafer with laserlight to determine the position of the at least one trench in the alignment mark region.
10. The method as recited in claim 9, wherein the step of scanning the wafer with laserlight includes performing a laserlight scattering alignment.
11. The method as recited in claim 7, wherein the step of blanket depositing the second metal layer includes blanket depositing the second metal layer to a thickness less than an amount needed to completely fill the at least one trench in the alignment mark region.
12. A method for providing contrast for alignment marks after a blanket metal deposition, comprising the steps of:
etching at least one trench in a first region and at least one trench in an alignment mark region of a semiconductor wafer;
forming a block layer in the first region and in the alignment mark region to fill the at least one trench;
patterning the block layer to remove the block layer from portions of the wafer other than the at least one trench in the alignment mark region;
depositing a metal layer on the semiconductor wafer to fill the at least one trench in the first regions, the metal layer being excluded from the at least one trench in the alignment mark region by the block layer;
planarizing the metal layer;
removing the block layer from the at least one trench in the alignment mark region; and
blanket depositing a second metal layer on the first region and the alignment mark region such that the at least one trench in the alignment mark region is suitable for use as a scattering alignment mark.
13. The method as recited in claim 12, wherein the step of depositing the metal layer includes the steps of:
forming a seed layer in the first region and the block layer in the at least one trench in the alignment mark region.
14. The method as recited in claim 12, further comprising the step of scanning the wafer with laserlight to determine the position of that the at least one trench in the alignment mark region.
15. The method as recited in claim 14, wherein the step of scanning the wafer with laserlight includes performing a laserlight scattering alignment.
16. The method as recited in claim 12, wherein the block layer includes silicon nitride.
17. The method as recited in claim 12, wherein the step of patterning the block layer includes the steps of:
forming a blocking mask by depositing a photoresist on the blocking layer;
patterning the photoresist to remain over the at least one trench in the alignment mark region; and
removing the blocking layer from portions of the wafer other than the at least one trench in the alignment mark region.
18. The method as recited in claim 17, wherein the photoresist includes a mid ultraviolet (MUV) photoresist.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An isolated dual-specificity antibody having specificity for both an activated erbB2 receptor and erbB1 dimers, without significant affinity for monomeric EGFr that is not activated,
wherein the antibody has the same binding specificity as an antibody produced by a cell line 8A4 having the assigned accession number PTA-4565 or a cell line A10A12 having the assigned accession number PTA-4566.
2. The isolated antibody of claim 1 wherein the antibody has an affinity for the activated erbB2 receptor that is at least about 10-fold greater than the affinity the antibody has for the erbB2 receptor that is not activated.
3. The isolated antibody of claim 1 wherein the antibody has an affinity for the activated erbB2 receptor that is at least about 100-fold greater than the affinity the antibody has for the erbB2 receptor that is not activated.
4. The isolated antibody of claim 1 wherein the antibody has specificity for one or more cystine knot regions on the activated erbB2 receptor and erbB 1 dimers.
5. The isolated antibody of claim 4 wherein the antibody has a binding constant of at least 5\xd7106 Ka for each activated erbB2 receptor and erbB 1 dimer.
6. The isolated antibody of claim 5 wherein the antibody has a binding constant of at least 1\xd7107 Ka for each activated erbB2 receptor and erbB 1 dimer.
7. The isolated antibody of claim 6 wherein the antibody has a binding constant of at least 2\xd7107 Ka for each activated erbB2 receptor and erbB 1 dimer.
8. The isolated antibody of claim 7 wherein the antibody has a binding constant of at least 1\xd7108 Ka for each activated erbB2 receptor and erbB 1 dimer.
9. The isolated antibody of claim 1 wherein the antibody is selected from the group consisting of a monoclonal antibody, a humanized antibody, a camelized antibody, a chimeric antibody, a primatized antibody, a phage-displayed antibody, a FAb fragment thereof, or a F(Ab)2 fragment thereof.
10. The isolated antibody of claim 1 wherein the antibody binds to an assembly domain of the receptor.
11. The isolated antibody of claim 10 wherein the assembly domain is a cystine knot.
12. The isolated antibody of claim 4 wherein said isolated antibody binds to sub domain IV of said activated erbB 1 receptor.
13. The isolated antibody of claim 1 wherein the antibody is produced by a cell line 8A4 having the assigned accession number PTA-4565 or a cell line A10A12 having the assigned accession number PTA-4566.
14. The isolated antibody of claim 13 wherein the antibody is produced by the cell line 8A4 having the assigned accession number PTA-4565.
15. The isolated antibody of claim 1 wherein the antibody is conjugated to a radioactive agent, a chemotherapeutic agent or an imaging agent.
16. The antibody of claim 15 wherein the radioactive agent is 47Sc, 67Cu, 90Y, 86Y, 109Pd, 123I, 125I, 131I, 186Re, 199Au, 211At, 212Pb, 18F or 212Bi.
17. The isolated antibody of claim 15 wherein the antibody is conjugated to a chemotherapeutic agent and wherein the chemotherapeutic agent is selected from the group consisting of methotrexate (amethopterin), doxorubicin (adrimycin), daunorubicin, cytosinarabinoside, etoposide, 5-4 fluorouracil, melphalan, chlorambucil, cyclophosphamide, cis-platin, vindesine, mitomycin, bleomycin, tamoxiphen, taxol, ricin, ricin A chain, Pseudomonas exotoxin (PE), diphtheria toxin (DT), Clostridium perfringens phospholipase C (PLC), bovine pancreatic ribonuclease (BPR), pokeweed antiviral protein (PAP), abrin, abrin A chain, cobra venom factor (CVF), gelonin (GEL), saporin (SAP), modeccin, viscumin and volkensin.
18. The isolated antibody of claim 15 wherein the antibody is conjugated to an imaging agent and wherein the imaging agent is 43K, 52Fe, 57Co, 67Cu, 67Ga, 68Ga, 77Br, 81Rb, 81MKr, 87MSr, 86Y, 90Y, 99MTc, 111In, 113MIn, 123I, 125I, 127Cs, 129Cs, 131I, 132I, 197Hg, 203Pb, 206Bi, 18F, a heavy metal or a positron emitter of oxygen, nitrogen, iron, carbon, or gallium.
19. The isolated antibody of claim 18 wherein the heavy metal is selected from the group consisting of a chelate of iron, gadolinium and manganese.
20. A composition comprising the isolated antibody of claim 1 and a pharmaceutically acceptable carrier, excipient, or diluent.
21. The composition of claim 20 wherein the composition is an injectable composition.
22. The composition of claim 20 further comprising a chemotherapeutic agent or an imaging agent.
23. The composition of claim 21 further comprising a therapeutically effective amount of methotrexate (amethopterin), doxorubicin (adriamycin), daunorubicin, cytosinarabinoside, etoposide, 5-4 fluorouracil, melphalan, chlorambucil, cyclophosphamide, cis-platin, vindesine, mitomycin, bleomycin, tamoxiphen, or taxol.
24. A method of treating an individual who has an erbB2erbB 1 tumor which comprises administering to said individual a pharmaceutical composition comprising the antibody according to claim 1 and a pharmaceutically acceptable excipient.
25. The method of claim 24 further comprising exposing said individual to radiation.
26. The method of claim 24 further comprising exposing said individual to a chemotherapeutic agent.
27. A method of imaging an erbB1erbB2 tumor in a patient suffering from an erbB1erbB2 tumor which comprises administering to said patient a pharmaceutical composition comprising (i) the antibody according to claim 15, said antibody being conjugated to an imaging agent, and (ii) a pharmaceutically acceptable excipient, and detecting binding of the antibody to the erbB1erbB2 tumor.
28. A method of inhibiting progression of transformation or tumorigenesis of a cell that expresses erbB 1 and erbB2 in an individual who has a predisposition for developing erbB1erbB2 tumor, who has had an erbB1erbB2 tumor removed or who has had an erbB 1erbB2 cancer enter remission, which comprises administering to said individual a pharmaceutical composition comprising the antibody according to claim 1 and a pharmaceutically acceptable excipient.
29. The method of claim 28 which comprises inhibiting said cell from becoming a transformed tumor cell.
30. A method of treating a patient suffering from an erbB tumor which comprises administering to the patient the antibody according to claim 1 and a chemotherapeutic agent.
31. The method of claim 30 wherein said antibody is administered prior to administration of said chemotherapeutic agent.
32. The method of claim 30 wherein said chemotherapeutic agent is administered prior to administration of said antibody.
33. The method of claim 30 wherein said antibody and said chemotherapeutic agent are administered concurrently.
34. A method of treating a patient suffering from an erbB tumor which comprises administering to the patient the antibody according to claim 1 and radiation.
35. The method of claim 34 wherein said antibody is administered prior to administration of radiation.
36. The method of claim 34 wherein radiation is administered prior to administration of said antibody.
37. The method of claim 34 wherein said antibody and radiation are administered concurrently.
38. The isolated antibody of claim 1, wherein the antibody specifically binds to at least one activation epitope in the extracellular region of the activated erbB2 receptor.
39. The isolated antibody of claim 1, wherein the antibody has an affinity for the activated erbB2 receptor that is at least about 5-fold greater than the affinity the antibody has for the erbB2 receptor that is not activated.