Author: claimsbot

1. An nanoimprint resist comprising:
a hyperbranched polyurethane oligomer (HP);
a perfluoropolyether (PFPE);
a methylmethacrylate (MMA); and
a diluent solvent.
2. The nanoimprint resist of claim 1, wherein the hyperbranched polyurethane oligomer (HP) is polymerized by a copolymerization of a trimellitic anhydride, an ethylene glycol, and an epoxy acrylic acid copolymer, or polymerized by a ring-opening copolymerization of an epoxy acrylic acid and an ethylene mercaptan.
3. The nanoimprint resist of claim 2, wherein a chemical structure of the hyperbranched polyurethane oligomer (HP) is:
4. The nanoimprint resist of claim 1, wherein the diluent solvent is 2-hydroxyethyl methacrylate or 2-Hydroxy Ethyl 2-methyl ethylene.
5. The nanoimprint resist of claim 1, wherein a weight percent of the HP is in a range from about 50 wt % to about 60 wt %, a weight percent of the PFPE is in a range from about 3 wt % to about 5 wt %, a weight percent of the MMA is in a range from about 5 wt % to about 10 wt %, and a weight percent of the diluents solvent is in a range from about 25 wt % to about 35 wt %.
6. The nanoimprint resist of claim 5, wherein the nanoimprint resist further comprises a polydimethlsiloxanes (PDMS) or methacrylatesilane with a weight percent in a range from about 5% to about 10%.
7. The nanoimprint resist of claim 5, wherein the naoimprint resist further comprises an initiator with a weight percent in a range from about 0.1% to about 2%.
8. A nanoimprint lithography method comprising:
(S31) providing a substrate and forming a first sacrifice layer, a second sacrifice layer and a nanoimprint resist on the substrate, wherein the nanoimprint resist comprises a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE); a methylmethacrylate (MMA), and a diluent solvent;
(S32) providing a master stamp with a first nanopattern formed by a plurality of projecting portions and gaps, pressing the first nanopattern into the nanoimprint resist, and forming a second nanopattern in the nanoimprint resist; and
(S33) transferring the second nanopattern to the substrate.
9. The nanoimprint lithography method of claim 8, wherein the hyperbranched polyurethane oligomer (HP) is polymerized by a copolymerization of a trimellitic anhydride, an ethylene glycol, and an epoxy acrylic acid copolymer, or is polymerized by a ring-opening copolymerization of an epoxy acrylic acid and an ethylene mercaptan.
10. The nanoimprint lithography method of claim 9, wherein a chemical structure of the hyperbranched polyurethane oligomer (HP) is:
11. The nanoimprint lithography method of claim 8, wherein in the nanoimprint resist, a weight percent of the HP is in a range from about 50 wt % to about 60 wt %, a weight percent of the PFPE is in a range from about 3 wt % to about 5 wt %, a weight percent of the MMA is in a range from about 5 wt % to about 10 wt %, and a weight percent of the diluents solvent is in a range from about 25 wt % to about 35 wt %.
12. The nanoimprint lithography method of claim 11, wherein the nanoimprint resist further comprises a polydimethlsiloxanes (PDMS) or a methacrylatesilane with a weight percent in a range from about 5% to about 10%.
13. The nanoimprint lithography method of claim 11, wherein the naoimprint resist further comprises an initiator with a weight percent in a range from about 0.1% to about 2%.
14. The nanoimprint lithography method of claim 8, wherein the first sacrifice layer is made of a thermoplastic polymer, the thermoplastic polymer is selected from the group consisting of polymethyl methacrylate (PMMA), epoxy resin, unsaturated polyester resins, and silicon ether resin.
15. The nanoimprint lithography method of claim 8, wherein the second sacrifice layer is made of aluminum or cesium.
16. The nanoimprint lithography method of claim 8, wherein the step (S32) comprises:
(S321) compressing the master stamp with the substrate to press the first nanopattern into the nanoimprint resist; and
(S322) curing the nanoimprint resist, and separating the master stamp from the substrate to form the second nanopattern in the nanoimprint resist, the second nanopattern comprising a plurality of protrusions and recesses.
17. The nanoimprint lithography method of claim 16, wherein in step (S322), the nanoimprint resist is cured via heating; after separating the master stamp from the substrate, a plurality of protrusions and recesses are exposed, and remains of the nanoimprrint resist are located at a bottom of the recess.
18. The nanoimprint lithography method of claim 17, wherein the step (S33) comprising:
(S331) removing the remains at the bottom of the recesses to expose the second sacrifice layer in part;
(S332) etching the second sacrifice layer exposed by the recesses to expose the first sacrifice layer in part;
(S333) etching the first sacrifice layer exposed by the recesses to expose the substrate in part; and
(S334) etching the substrate exposed by the recesses.
19. A nanoimprint lithography method comprising the steps of:
(S51) providing a substrate and forming a first sacrifice layer and a second sacrifice layer on the substrate;
(S52) providing a master stamp with a first nanopattern, and depositing a nanoimprint resist on the first nanopattern, the nanoimprint resist comprising a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent;
(S53) attaching the second sacrifice layer to the nanoimprint resist, forming a second nanopattern in the naoimprint resist; and
(S54) transferring the second nanopattern to the substrate.
20. The nanoimprint lithography method of claim 19, wherein a chemical structure of the hyperbranched polyurethane oligomer (HP) is:

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An image forming apparatus comprising:
an image forming portion which forms an image onto a sheet; and
a sheet processing apparatus which processes after aligning sheets on which images are formed,
wherein said sheet processing apparatus has:
a stacking portion which stacks sheets on each of which an image is formed, and
a pair of aligning members which are configured to face with each other and movable independently so that said pair of aligning members pinches side edges of the sheets in a direction perpendicular to a conveying direction in which the sheet is conveyed to said stacking portion to align the side edges of the sheets,
wherein one of said aligning members is allowed to be chosen as a reference of the alignment, while the other of said aligning members aligns the side edges of the sheets by pressing the sheets against said one of aligning members, and
wherein when an image forming portion which forms an image onto a sheet, said image forming portion forms an image at an image forming position which reference is on a basis of the sheet side edge to be abutted against said one of the aligning members.
2. An image forming apparatus according to claim 1, further comprising:
a side edge detection portion provided on an upstream side of said image forming portion, said side edge detection portion detecting position of the sheet side edge to be abutted against said one of the aligning member; and
a control portion which controls the image forming position where said image forming portion forms an image,
and wherein on a basis of signals from said side edge detection portion, said control portion controls the image forming portion so as to form an image at the image forming position which reference is on a basis of the sheet side edge to be abutted against said one of the aligning members.
3. An apparatus according to claim 2, further comprising an image memory which stores image data,
wherein said control portion changes the image forming position on a basis of the sheet side edge by shifting a position of an area of the image data in a direction perpendicular to the conveying direction in an image writing area in said image memory.
4. An apparatus according to claim 2, wherein said side edge detection portion has sensors configured to face with each other on an upstream side of said image forming portion so as to respectively detect positions of both side edges in a direction perpendicular to the conveying direction of sheet.
5. An apparatus according to claim 2, wherein said side edge detection portion extends on the upstream side of said image forming portion in the direction perpendicular to the conveying direction of the sheet by a length in which said side edge detection portion is capable of detecting positions of both side edges of the sheet in the direction perpendicular to the conveying direction of the sheet.
6. An apparatus according to claim 5, wherein said side edge detection portion is a contact type line sensor.
7. An apparatus according to claim 1, wherein said stacking portion has a press member which presses the sheets against said one of the aligning members.
8. An apparatus according to claim 2, wherein said stacking portion has a press member which presses the sheets against said one of the aligning members.
9. An apparatus according to claim 1, wherein said sheet processing apparatus has a stapler, said stapler stapling the sheets stacked in said stacking portion,
and wherein said stapler staples the edge portions on the side of the sheet edges which abut against said one aligning member.
10. An apparatus according to claim 2, wherein said sheet processing apparatus has a stapler, said stapler stapling the sheets stacked in said stacking portion,
and wherein said stapler staples the edge portions on the side of the sheet edges which abut against said one aligning member.
11. An apparatus according to claim 1, further comprising:
a side edge detection portion provided on an upstream side of said image forming portion, said side edge detection portion detecting position of the sheet side edge to be abutted against said one of the aligning members;
a sheet moving unit provided on the upstream side of said image forming portion, said sheet moving unit moving the sheet in the direction perpendicular to the conveying direction of the sheet; and
a control portion which controls said sheet moving unit,
wherein on a basis of information from said side edge detection portion, said control portion controls said sheet moving unit to move the sheet at the image forming position which reference is on a basis of the sheet side edge to be abutted against said one of the aligning members.
12. An apparatus according to claim 11, wherein said side edge detection portion having sensors configured to face with each other on an upstream side of said image forming portion so as to respectively detect positions of both side edges in the direction perpendicular to the conveying direction of the sheet.
13. An apparatus according to claim 11, wherein said side edge detection portion extends in the direction perpendicular to the conveying direction of the sheet on the upstream side of said image forming portion by a length in which said side edge detection portion is capable of detecting positions of both side edges of the sheet in the direction perpendicular to the conveying direction of said sheet
14. An apparatus according to claim 13, wherein said side edge detection portion is a contact type line sensor.
15. An apparatus according to claim 11, wherein said stacking portion has a press member which presses the sheets against said one of the aligning member.
16. An apparatus according to claim 11, wherein said sheet processing apparatus has a stapler provided, said stapler stapling the sheets stacked in said stacking portion,
and wherein said stapler staples the edge portions on the side of the sheet edges which abuts against said one of the aligning members.

1. A process to identify a compound that is useful to treat or prevent ischemic or hypoxic injury in a mammal comprising (i) assessing the potency boost of the compound at physiological pH versus disorder-induced low pH in a cell by repeating the potency boost experiment at least 5 times such that the 95% confidence interval does not change more than 15% with the addition of a new experiment; (ii) testing the compound in an animal model of transient focal ischemia and measuring the effect of the compound on the infarct volume by repeating the experiment at least 12 times such that the 95% confidence interval does not change more than 5% with the addition of a new experiment; (iii) selecting a compound that has a potency boost of at least 5 according to step (i) and at least a 30% decrease in infarct volume according to step (ii).
2. A process to select a compound to treat or prevent a disorder that lowers the pH wherein the compound (i) exhibits a potency boost of at least 5 as determined in experiments in which the potency boost of the compound is assessed at physiological pH versus disorder-induced low pH in a cell by repeating the potency boost experiments at least 5 times such that the 95% confidence interval does not change more than 15% with the addition of a new experiment and (ii) exhibits at least a 30% decrease in infarct volume as measured in an animal model of focal ischemia as determined by repeating the experiment at least 12 times such that the 95% confidence interval does not change more than 5% with the addition of a new experiment.
3. The process of claim 1 wherein the mammal is a human.
4. The process of claim 1 or 2, wherein the cell expresses a glutamate receptor.
5. The process of claim 4, wherein the glutamate receptor is an NMDA receptor.
6. The process of claim 5, wherein the NMDA receptor comprises an NR1 subunit and at least one NR2 subunit selected from the group consisting of NR2A, NR2B, NR2C, and NR2D or any combination thereof.
7. The process of claim 5, wherein the NMDA receptor comprises an NR1 subunit and an an NR2 or NR3 subunit selected from the group consisting of NR2A, NR2B, NR2C, NR2D, NR3A, and NR3B or any combination thereof.
8. The process of claim 4, wherein the glutamate receptor comprises glutamate receptor subunits selected from the group consisting of GluR1, GluR2, GluR3, GluR4, GluR5, GluR6, GluR7, KA1, KA2, delta-1 and delta-2.
9. The compound of claim 1 or 2 wherein the compound is:
as well as pharmaceutically acceptable salts, esters, enantiomers, enantiomeric mixtures, and mixtures thereof.
10. The compound of claim 9 wherein the compound is
as well as pharmaceutically acceptable salts thereof.
11. The process of claim 2, wherein the disorder is ischemic or hypoxic injury
12. The process of claim 2, wherein the disorder is neuropathic pain or related disorder.
13. The process of claim 2, wherein the disorder is a brain tumor.
14. The process of claim 2, wherein the disorder is epilepsy.
15. The process of claim 2, wherein the disorder is a neurodegenerative disease.
16. The process of claim 11, wherein the ischemic or hypoxic injury is selected from the group consisting of: stroke, vasospasm after subarachnoid hemorrhage, traumatic brain injury, cognitive deficit after bypass surgery, cognitive deficit after carotid angioplasty; and ischemia following hypothermic circulatory arrest.
17. The process of claim 12, wherein the neuropathic pain or related disorder is selected from the group consisting of: peripheral diabetic neuropathy, postherpetic neuralgia, complex regional pain syndromes, peripheral neuropathies, cancer neuropathic pain, chemotherapy-induced neuropathic pain, neuropathic low back pain, HIV neuropathic pain, trigeminal neuralgia, and central post-stroke pain.
18. The process of claim 15, wherein the neurodegenerative disease is selected from the group consisting of: Parkinson’s disease, Alzheimer’s disease, Huntington’s disease and Amyotrophic Lateral Sclerosis.
19. The process of claim 16, wherein the ischemic or hypoxic injury is stroke.
20. The process of claim 16, wherein the ischemic or hypoxic injury is vasospasm after subarachnoid hemorrhage.
21. The process of claim 1 or 2, wherein the compound does not cause cognitive impairment.
22. The process of claim 21, wherein the cognitive impairment is psychotic-like symptoms.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of generating a bit stream pulse modulated signal at a controlled bit rate, said method including the steps of:
converting light into an electrical signal having a varying signal voltage dependent on the intensity of said light, the converting being effected by light sensitive capacitive element coupled to a supply rail through a transistor;
generating pulses from said varying signal voltage, said pulses being dependent on a charge stored by the light sensitive capacitive element;
frequency modulating said pulses to generate a pulse frequency modulated signal, the frequency modulating being effected by a feedback signal supplied to a control input of the transistor, wherein the feedback signal is dependent on said pulses; and
sampling said pulse frequency modulated signal to generate said bit stream pulse modulated signal at said controlled bit rate.
2. A method as claimed in claim 1, wherein said step of generating pulses is effected by comparing said varying signal voltage with a reference voltage, said pulses having edges resulting from said signal voltage crossing said reference voltage.
3. A method as claimed in claim 1, wherein the step of sampling includes providing a sampling frequency and providing the bit stream pulse modulated signal at said bit rate that is at least twice the sampling frequency.
4. A method as claimed in claim 1, further including a step of stochastic processing of said bit stream pulse modulated signal.
5. A method as claimed in claim 4, wherein the step of stochastic processing includes generating binary values from said bit stream pulse modulated signal.
6. A method as claimed in claim 5, wherein, the step of stochastic processing includes generating binary values from said bit stream pulse modulated signal, wherein each of said binary values corresponds to said bit stream pulse modulated signal provided over an integer multiple of said sampling rate.
7. A method as claimed in claim 6, wherein, the step of stochastic processing is effected by binary logic.
8. A method as claimed in claim 1, wherein the method is effected by an image sensor.
9. An image sensor array for providing a bit stream pulse modulated signal at a controlled bit rate, the image sensor circuit comprising:
a two-dimensional array of pixel signal pulse frequency modulators each having:
a transistor coupled to supply rail;
a light sensitive capacitive element coupled to the supply rail through the transistor, the light sensitive capacitive element having a signal output providing for converting incident light into a varying signal voltage that is dependent on light intensity detected by the light sensitive capacitive element,
a comparator having a constant reference voltage input and a signal input coupled to the signal output;
a feedback loop coupling an output of the comparator to a control input of the transistor to pulse frequency modulate said varying signal voltage thereby providing a pulse frequency modulated signal; and
a sampling unit which samples said pulse frequency modulated signal to generate said bit stream pulse modulated signal at said controlled bit rate.
10. An image sensor array as claimed in claim 9, wherein said light sensitive capacitive element is a photodiode.
11. An image sensor array as claimed in claim 9, wherein said sampling unit comprises a signal generator outputting a signal at said controlled bit rate to a shift register.
12. An image sensor array as claimed in claim 9, wherein said bit stream pulse modulated signal at a controlled bit rate is input to an arithmetic unit for performing stochastic processing on said bit stream pulse modulated signal.
13. An image sensor array as claimed in claim 12, wherein said arithmetic unit comprises binary logic circuits for performing said stochastic processing.