Author: claimsbot

1-7. (canceled)
8. A method for operating mechanically stressed, moving, components in which, in the operating state, an accumulation of damage is used to assess the influence of a load collective on the service life of the loaded components, wherein, in order to determine individual load collectives (6; 18), the moving components (1) are divided into a plurality of segments (5 to 10), and the respective individual load collectives are combined to form an individual stress collective, wherein at least one segment (6) of the component (1) having the highest measured stress collective is relieved of load by modulating an operating characteristic.
9. The method as claimed in claim 8, wherein the respective damage potential of said segments (5 to 10) is determined on the basis of the actual loadings.
10. The method as claimed in claim 9, wherein the maximum height (18) of the respective actual loading is measured as an operating characteristic therefor.
11. The method as claimed in claim 8, wherein the load cycle of the maximum occurring loading is additionally measured as an operating characteristic for the respective actual loading.
12. The method as claimed in claim 8, characterized in that torque, rotational speed, acceleration or speed of revolution are used as parameters of the individual load collectives.
13. The method as claimed in claim 8, wherein the modulation takes place by some of the load from the highest stress collective being distributed to one or more segments (5) loaded to a lesser extent.
14. The method as claimed in claim 8, wherein the load is distributed to selectable regions of toothing parts.
15. The method as claimed in claim 8, wherein said components are rotating, said segments are circular segments, and wherein a torque or a rotational speed is modulated as said operating characteristic.
16. The method as claimed in claim 8, wherein the actual loading data are transmitted wirelessly to an electronic computer for calibration of said data.
17. The method claims claimed in claim 16, wherein the actual loading data of the components in the effect of said loading data as mechanical stress for the individual, metrological divided segments of the components are distributed approximately uniformly to individual segments or all of the segments in the manner of a balancing operation by calibration of said data via an electronic computer.
18. A mechanically loadable component, the service life of which is determined by a method as claimed in claim 8.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. (canceled)
2. The method as claimed in claim 16, wherein said adjusting step includes a step of moving the axis of the bar material in a direction being perpendicular to the rotational axis of the support member.
3. The method as claimed in claim 2, wherein, in said moving step, the axis of the bar material is movable in two directions being perpendicular to each other.
4. The method as claimed in claim 3, wherein said adjusting step further includes steps of:
rotating the bar material around the axis thereof; and
measuring a distance of the bar material from a reference point during said rotating step of said adjusting step.
5. The method as claimed in claim 3, wherein said adjusting step includes a step of changing an inclination angle of the axis of the bar material with respect to the rotational axis of the support member.
6. The method as claimed in claim 5, wherein said adjusting step further includes a step of maintaining the angle which is changed in said changing step.
7. The method as claimed in claim 6, wherein said adjusting step further includes steps of:
rotating the bar material around the axis thereof; and
measuring a distance of the bar material from a reference point during said rotating step of said adjusting step.
8. The method as claimed in claim 7, wherein plural distances are measured from respective reference points in said measuring step.
9. The method as claimed in claim 16, wherein said adjusting step includes a step of changing an inclination angle of the axis of the bar material with respect to the rotational axis of the support member.
10. The method as claimed in claim 9, wherein said adjusting step further includes a step of maintaining the angle which is changed in said changing step.
11. The method as claimed in claim 9, wherein the axis of the bar material is freely inclinable with respect to the rotational axis of the support member in said changing step.
12. The method as claimed in claim 11, wherein the axis of the bar material is freely inclinable with respect to the rotational axis of the support member in at least two different direction in said changing step.
13. The method as claimed in claim 16, wherein said adjusting step includes a step of forming conical portions at both end portions of the base material, each of the conical portions having a rotational, axis being coincide with a center of a perfect circle on a core.
14. The method as claimed in claim 13, wherein said adjusting step further includes a step of forming an orientation fiat on at least one of conical portions.
15. The method as claimed in claim 16, further comprising steps of:
maintaining a position of the bar material for a predetermined period from reaching a sintering area up to a sintering temperature; and
starting a sintering process after said maintaining step.
16. A method for manufacturing a base material for an optical fiber, comprising steps of:
holding a bar material by a support member;
adjusting to reduce a difference between an axis of the bar material and a rotational axis of the support member; and
etching the base material wherein a direction of a maximum diameter of the base material with respect to a section perpendicular to the axis of the base material is perpendicular to a etchant surface.
17-49. (canceled)

1. A non-inverting LPF comprising:
a filter input terminal;
a filter output terminal;
a first resistor that is coupled to the filter input terminal and the filter output terminal, wherein the first resistor has a first resistance;
an amplifier having a first input terminal, a second input terminal, and an output terminal;
a first capacitor that is coupled between the filter output terminal and the first input terminal of the amplifier;
a second capacitor that is coupled between the filter output terminal and the output terminal of the amplifier; and
a second resistor that is coupled between the first input terminal of the amplifier and the output terminal of the amplifier, wherein the second resistor has a second resistance, and wherein second resistance is greater than the first resistance.
2. The non-inverting LPF of claim 1, wherein the bandwidth of amplifier is greater than the cutoff frequency of the LPF.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) forming a pad nitride film on a semiconductor substrate;
(b) etching a portion of the pad nitride film and the semiconductor substrate to form a trench;
(c) depositing a first insulating film on the entire structure so that the trench is buried;
(d) polishing the first insulating film so that the pad nitride film is exposed;
(e) wet etching the first insulating film so that the semiconductor substrate at both sidewalls of the trench is exposed;
(f) performing a SEG process at the condition that the pad nitride film is formed on the semiconductor substrate for only the semiconductor substrate exposed at both sidewalls of the trench to form a silicon growth layer on each sidewall;
(g) forming a second insulating film on the first insulating film so that the trench is buried; and
(h) removing the pad nitride film.
2. The method as claimed in claim 1, wherein the first insulating film or the second insulating film are formed using any one of a SOG oxide film of a family of HSQ, a HDP oxide film, a BPSG oxide film, an USG oxide film, a PSG oxide film and a PETEOS oxide film.
3. The method as claimed in claim 2, wherein the SOG oxide film of a family of HSQ is formed using a fluidity oxide film as a coating source liquid at the rotating force of 1500 through 3000 rpm.
4. The method as claimed in claim 2, wherein the HDP oxide film is formed using SiH4, O2 and Ar gas or SiH4, O2 and He gas as a source gas, by sequentially performing a deposition process at a temperature of 400 through 700\xb0 C. for depositing the HDP oxide film on the entire structure, a CMP process for exposing the semiconductor substrate, and a wet or a dry etch process for exposing a portion of the both inner sidewalls of the trench.
5. The method as claimed in claim 2, wherein the BPSG oxide film is formed using boron and phosphoric having a concentration ratio of 12:4 through 13:6, by sequentially performing a CVD process at a temperature of 400 through 500\xb0 C. for depositing the BPSG oxide film, a CMP process for exposing the semiconductor substrate, and a wet or a dry etch process for exposing a portion of the both inner sidewalls of the trench.
6. The method as claimed in claim 2, wherein the USG oxide film is formed using TEOS and O3 gas, by sequentially performing a deposition process at a temperature of 400 through 600\xb0 C. for depositing the BPSG oxide film, a CMP process for exposing the semiconductor substrate, and a wet or a dry etch process for exposing a portion of the both inner sidewalls of the trench.
7. The method as claimed in claim 1, wherein the SEG process is performed using DCS(SiH2Cl2) gas and HCl gas, wherein the amount of the DCS(SiH2Cl2) gas introduced is 100 through 300 sccm, the amount of the HCl introduced is 20 through 80 sccm, a deposition pressure is 10 through 40 torr and a temperature is 700 through 900\xb0 C.