Author: claimsbot

1. A nanoparticle-containing well fluid comprising a base fluid and about 5 wt % or less nanoparticles, for preventing or reducing fluid loss to an underground formation, wherein the well fluid is a drilling fluid, kill fluid, completion fluid, or pre-stimulation fluid.
2. The well fluid of claim 1 wherein the well fluid is a drilling fluid.
3. The well fluid of claim 2 wherein the drilling fluid is an invert emulsion drilling fluid.
4. The fluid of claim 1 wherein the nanoparticles are present in an amount of less than about 4 wt %, less than about 3 wt %, or less than about 1%.
5. (canceled)
6. (canceled)
7. The fluid of claim 1 wherein the nanoparticles are present in an amount of between about 0.1 to about 1 wt %; between about 0.5 to about 1.0 wt %; between about 0.6 to 1 wt %; or between about 0.74 to about 1 wt %.
8. (canceled)
9. (canceled)
10. (canceled)
11. The fluid of claim 1 wherein the nanoparticles have a particle size of between about 1 to about 120 nm or between about 1 to about 30 nm.
12. (canceled)
13. (canceled)
14. The fluid of claim 11 wherein substantially all of the nanoparticles have a particle size in the range of 1-30 nm.
15. The fluid of claim 1 wherein the nanoparticles are one or more of metal hydroxide, metal oxide, metal carbonate, metal sulfide, and metal sulfate.
16. The fluid of claim 15 wherein the nanoparticles are selected from the group consisting of iron hydroxide, iron oxide, calcium carbonate, iron sulfide, barium sulfate, or a mixture thereof.
17. The fluid of claim 15 wherein the nanoparticles are iron oxide formed from iron hydroxide in high pressure high temperature conditions in the underground formation.
18. The fluid of claim 1 wherein the nanoparticles are formed in situ in the fluid or formed ex situ and added to the fluid.
19. (canceled)
20. (canceled)
21. (canceled)
22. (canceled)
23. (canceled)
24. The fluid of claim 1 wherein the reduction of fluid loss is at least about 70% compared to a well fluid that does not contain loss circulation materials or nanoparticles.
25. (canceled)
26. (canceled)
27. A method of making the nanoparticle-containing well fluid defined in claim 1 by forming the nanoparticles ex situ, comprising the steps of providing aqueous-based precursor solutions for forming the nanoparticles, mixing the precursor solutions under high shear, and adding the mixed precursor solution to the well fluid, to form the nanoparticle-containing fluid, wherein the nanoparticles act as fluid loss material for reducing fluid loss in an underground formation.
28. A method for making a nanoparticle-containing well fluid defined in claim 1 by forming the nanoparticles in situ, comprising the steps of providing aqueous-based precursor solutions for forming the nanoparticles, adding the precursor solutions to the well fluid, and subjecting the fluid to mixing and shear to form the nanoparticle-containing fluid, wherein the nanoparticles act as a fluid loss material for reducing fluid loss in an underground formation.
29. The method of claim 28 wherein the fluid is an invert emulsion drilling fluid and the nanoparticles form in the dispersed water pools of the invert emulsion drilling fluid.
30. The method of claim 28 wherein the nanoparticle is iron (III) hydroxide.
31. The method of claim 29 wherein the aqueous-based precursor solutions comprise an aqueous based solution containing FeCl3(aq) and an aqueous based solution containing NaOH(aq); the aqueous-based solutions comprise an aqueous based solution containing Ca(NO)3 and an aqueous based solution containing Na2CO3; the aqueous-based solutions comprise an aqueous based solution containing BaCl2 and an aqueous based solution containing Na2SO4; or the aqueous-based solutions comprise an aqueous based solution containing Na2S and an aqueous based solution containing FeCl2.
32. (canceled)
33. (canceled)
34. (canceled)
35. The method of claim 27 wherein the fluid is an invert emulsion drilling fluid and the nanoparticles form in the dispersed water pools of the invert emulsion drilling fluid.
36. The method of claim 27 wherein the nanoparticle is iron (III) hydroxide.
37. The method of claim 27 wherein the aqueous-based precursor solutions comprise an aqueous based solution containing FeCl3(aq) and an aqueous based solution containing NaOH(aq); the aqueous-based solutions comprise an aqueous based solution containing Ca(NO)3 and an aqueous based solution containing Na2CO3; the aqueous-based solutions comprise an aqueous based solution containing BaCl2 and an aqueous based solution containing Na2SO4; or the aqueous-based solutions comprise an aqueous based solution containing Na2S and an aqueous based solution containing FeCl2.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A mobile communication device, comprising:
a wireless module performing wireless transceiving to and from a first service network and a second service network; and
a controller module transmitting a first request message for a Mobility Management (MM) procedure to the first service network via the wireless module, receiving a first rejection message with a first MM back-off timer corresponding to the first request message from the first service network via the wireless module, starting the first MM back-off timer for the first service network in response to the first rejection message, transmitting a second request message for the MM procedure to the second service network via the wireless module, receiving a second rejection message with a second MM back-off timer from the second service network via the wireless module, and in response to the second rejection message, keeping the first MM back-off timer running for the first service network when it is not yet expired and starting the second MM back-off timer for the second service network,
wherein the controller module is coupled to a subscriber identity card, and further stores statuses of the first and second MM back-off timers in the subscriber identity card periodically before the mobile communication device is powered off, or stores the statuses of the first and second MM back-off timers in the subscriber identity card in response to the mobile communication device being powered off.
2. The mobile communication device of claim 1, wherein the second request message is transmitted in response to initiating a Public Land Mobile Network (PLMN) selection procedure to search for another second service network other than the first service network.
3. The mobile communication device of claim 1, wherein the controller module does not remove the statuses of the first and second MM back-off timers from the subscriber identity card, in response to the subscriber identity card being decoupled from the controller module and then coupled back thereto.
4. The mobile communication device of claim 1, further comprising a storage unit, wherein the controller module further stores statuses of the first and second MM back-off timers in the storage unit.
5. The mobile communication device of claim 1, wherein the MM procedure is an Attach procedure, and the first request message and the first rejection message are an ATTACH REQUEST message and an ATTACH REJECT message, respectively.
6. The mobile communication device of claim 1, wherein the MM procedure is a Tracking Area Update procedure, and the first request message and the first rejection message are a TRACKING AREA UPDATE REQUEST message and a TRACKING AREA UPDATE REJECT message, respectively.
7. A method for handling Mobility Management (MM) back-off timers by a mobile communication device coupled to a subscriber identity card, comprising:
transmitting a first request message for an MM procedure to a first service network;
receiving a first rejection message with a first MM back-off timer corresponding to the first request message from the first service network;
starting the first MM back-off timer for the first service network in response to the first rejection messages;
transmitting a second request message for the MM procedure to a second service network;
receiving a second rejection message with a second MM back-off timer from the second service network;
in response to the second rejection message, keeping the first MM back-off timer running for the first service network when it is not yet expired and starting the second MM back-off timer for the second service network; and
storing statuses of the first and second MM back-off timers in the subscriber identity card periodically before the mobile communication device is powered off, or storing the statuses of the first and second MM back-off timers in the subscriber identity card in response to the mobile communication device being powered off.
8. The method of claim 7, wherein the second request message is transmitted in response to initiating a Public Land Mobile Network (PLMN) selection procedure to search for another second service network other than the first service network.
9. The method of claim 7, further comprising:
not removing the statuses of the first and second MM back-off timers from the subscriber identity card, in response to the subscriber identity card being decoupled from the mobile communication device and then coupled back thereto.
10. The method of claim 7, wherein the mobile communication device further comprises a storage unit, and the method further comprises storing statuses of the first and second MM back-off timers in the storage unit.
11. The method of claim 7, wherein the MM procedure is an Attach procedure, and the first request message and the first rejection message are an ATTACH REQUEST message and an ATTACH REJECT message, respectively.
12. The method of claim 7, wherein the MM procedure is a Tracking Area Update procedure, and the first request message and the first rejection message are a TRACKING AREA UPDATE REQUEST message and a TRACKING AREA UPDATE REJECT message, respectively.

1. A semiconductor static random access memory device, comprising:
a first inverter being composed of a first P-channel MOS transistor formed at a high potential power supply side and a first N-channel MOS transistor formed at a low potential power supply side;
a second inverter being composed of a second P-channel MOS transistor formed at the high potential power supply side and a second N-channel transistor formed at the low potential power supply side, an input of the second inverter connecting with an output of the first inverter, an output of the second inverter connecting with an input of the first inverter;
a data-retaining portion having a third N-channel MOS transistor, a fourth N-channel MOS transistor, a fifth N-channel MOS transistor and a sixth N-channel MOS transistor, the third N-channel MOS transistor having a source connecting with the output of the first inverter, a drain connecting with a first bit line and a gate connecting with a word line, and the fourth N-channel MOS transistor having a source connecting with the output of the second inverter, a drain connecting with a second bit line paired with the first bit line and a gate connecting with the word line, a drain of the fifth N-channel MOS transistor connecting with the first bit line, a gate of the fifth N-channel MOS transistor connecting with the word line, a drain of the sixth N-channel MOS transistor connecting with the source of the fifth N-channel MOS transistor, a source of the sixth N-channel MOS transistor connecting with the low potential power supply and a gate of the sixth N-channel MOS transistor connecting with the output of the second inverter;
a data-reading portion having a first group of transistors including at least one N-channel MOS transistor, data-reading portion reading out data stored in the data-retaining portion via the first bit line;
a first P-well region including the first N-channel MOS transistor, the third N-channel MOS transistor and the first group of transistors;
a second P-well region including the second N-channel MOS transistor and the fourth N-channel MOS transistor; and
an N-well region being interposed between the first P-well region and the second P-well region, the N-well region adjoining the first group of transistors in the first P-well region, the N-well region having the first P-channel MOS transistor and the second P-channel MOS transistor, wherein gate widths of the fifth N-channel MOS transistor and the sixth N-channel MOS transistor, respectively, is lamer than gate widths of the first N-channel MOS transistor. the second N-channel MOS transistor, the third N-channel MOS transistor, the fourth N-channel MOS transistor, the first P-channel MOS transistor and the second P-channel MOS transistor. respectively.
2. The semiconductor static random access memory device, according to claim 1,
wherein gate lengths of the third N-channel MOS transistor, the fourth N-channel MOS transistor and the fifth N-channel MOS transistor, respectively, is larger than the gate lengths of the first N-channel MOS transistor, the second N-channel MOS transistor and the sixth N-channel MOS transistor, respectively.
3. A semiconductor static random access memory device, comprising:
a first inverter being composed of a first P-channel MOS transistor formed at a high potential power supply side and a first N-channel MOS transistor formed at a low potential power supply side;
a second inverter being composed of a second P-channel MOS transistor formed at the high potential power supply side and a second N-channel transistor formed at the low potential power supply side, an input of the second inverter connecting with an output of the first inverter, an output of the second inverter connecting with an input of the first inverter;
a data-retaining portion having a third N-channel MOS transistor and a fourth N-channel MOS transistor, the third N-channel MOS transistor having a source connecting with the output of the first inverter, a drain connecting with a first bit line and a gate connecting with a word line, and the fourth N-channel MOS transistor having a source connecting with the output of the second inverter, a drain connecting with a second bit line paired with the first bit line and a gate connecting with the word line;
a first data-reading portion having a first group of transistors including, a fifth N-channel MOS transistor and a sixth N-channel MOS transistor, a drain of the fifth N-channel MOS transistor connecting with the first bit line, a gate of the fifth N-channel MOS transistor connecting with the word line, a drain of the sixth N-channel MOS transistor connecting with the source of the fifth N-channel MOS transistor, a source of the sixth N-channel MOS transistor connecting with the low potential power supply and a gate of the sixth N-channel MOS transistor connecting with the output of the second inverter, the second data-reading portion have a seventh N-channel MOS transistor and a eighth N-channel MOS transistor, a drain of the seventh N-channel MOS transistor connecting with the first bit line, a gate of the fifth N-channel MOS transistor connecting with the word line, a drain of the eighth N-channel MOS transistor connecting with the source of the seventh N-channel MOS transistor, a source of the eighth N-channel MOS transistor connecting with the low potential power supply and a gate of the eighth N-channel MOS transistor connecting with the output of the second inverter, the first data-reading portion reading out data stored in the data-retaining portion via the first bit line;
a second data-reading portion having a second group of transistors including a seventh N-channel MOS transistor and a eighth N-channel MOS transistor, a drain of the seventh N-channel MOS transistor connecting with the first bit line, a gate of the fifth N-channel MOS transistor connecting with the word line, a drain of the eighth N-channel MOS transistor connecting with the source of the seventh N-channel MOS transistor, a source of the eighth N-channel MOS transistor connecting with the low potential power supply and a gate of the eighth N-channel MOS transistor connecting with the output of the second inverter, the second data-reading portion reading data stored in the data-retaining portion via the second bit line;
a first P-well region including the first N-channel MOS transistor, the third N-channel MOS transistor and the first group of transistors;
a second P-well region including the second N-channel MOS transistor, the fourth N-channel MOS transistor and the second group of transistors; and
an N-well region being interposed between the first P-well region and the second P-well region, the N-well region adjoining the first group of transistors in the first P-well region and the second group of transistors in the second P-well region, the N-well region having the first P-channel MOS transistor and the second P-channel MOS transistor, wherein gate widths of the fifth N-channel MOS transistor, the sixth N-channel MOS transistor, the seven N-channel MOS transistor and the eighth N-channel MOS transistor, respectively, is larger than gate widths of the first N-channel MOS transistor, the second N-channel MOS transistor, the third N-channel MOS transistor, the fourth N-channel MOS transistor, the first P-channel MOS transistor and the second P-channel MOS transistor, respectively.
4. The semiconductor static random access memory device, according to claim 3,
wherein gate lengths of the third N-channel MOS transistor, the fourth N-channel MOS transistor, the fifth N-channel MOS transistor and the seventh N-channel MOS transistor, respectively, is larger than the gate size of the first N-channel MOS transistor, gate lengths of the second N-channel MOS transistor, the sixth N-channel MOS transistor and the gate size of eighth N-channel MOS transistor, respectively.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A network system connected to a storage device and a plurality of information devices using storage regions of the storage device, the system comprising a band control instruction apparatus including:
a band control information creation block for creating band control information required for performing network communication band control in accordance with band guarantee requirement information related to the network communication band guarantee, configuration information in the storage device and performance information of the storage device, and
an instruction block for instructing a band control execution device so as to execute the network communication band control in accordance with the band control information.
2. The network system as claimed in claim 1, wherein the band control instruction device further includes an acquisition block for acquiring configuration information in the storage device and performance information of the storage device.
3. The network system as claimed in claim 1, wherein a band setting apparatus has a judgment block for judging whether the band control executed by the network follows the band guarantee requirement information and if not follows, instructing the band control information creation block to create the band control information.
4. The network system as claimed in claim 1, wherein the band control information creation block of the band setting apparatus creates the band control information when the configuration in the storage device or the network connection relationship is modified.
5. A storage apparatus connected via a network to a plurality of information devices, the apparatus comprising:
a band control information creation block for creating band control information required for performing network communication band control in accordance with band guarantee requirement information related to the network communication band guarantee, configuration information in the storage apparatus and performance information of the storage apparatus, and
an instruction block for instructing a band control execution device so as to execute the network communication band control in accordance with the band control information.
6. A band control apparatus for executing communication band control of a network connected to a storage device and a plurality of information devices using storage regions of the storage device, the apparatus comprising:
a band control information creation block for creating band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
a band control execution block for executing the network communication band control in accordance with the band control information.
7. A network relay apparatus for controlling connection relationship of a network connected to a storage device and a plurality of information devices using storage regions of the storage device, the apparatus comprising:
a band control information creation block for creating band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
a band control execution block for executing the network communication band control in accordance with the band control information.
8. A program for causing a band control instruction apparatus to execute a communication band control instruction in a network system connected to a storage device and a plurality of information devices using storage regions of the storage device, the program causing the apparatus to execute:
a procedure to create band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
a procedure to execute the network communication band control in accordance with the band control information.
9. A program for causing a band control apparatus to execute a communication band control in communication of a network connected to a storage device and a plurality of information devices using storage regions of the storage device, the program causing the apparatus to execute:
a procedure to create band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
a procedure to execute the network communication band control in accordance with the band control information.
10. A recording medium containing a program for causing a band control instruction apparatus to execute a communication band control instruction in a network system connected to a storage device and a plurality of information devices using storage regions of the storage device, the program causing the apparatus to execute:
a procedure to create band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
a procedure to execute the network communication band control in accordance with the band control information.
11. A recording medium containing a program for causing a band control apparatus to execute a communication band control in communication of a network connected to a storage device and a plurality of information devices using storage regions of the storage device, the program causing the apparatus to execute:
a procedure to create band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
a procedure to execute the network communication band control in accordance with the band control information.
12. A communication band control instruction method for a network system connected to a storage device and a plurality of information devices using storage regions of the storage device, the method comprising steps of:
creating band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
executing the network communication band control in accordance with the band control information.
13. A communication band control method for a network connected to a storage device and a plurality of information devices using storage regions of the storage device, the method comprising steps of:
creating band control information required for performing network communication band control in accordance with the band guarantee requirement information concerning the network communication band guarantee, configuration information in the storage device, and the performance information of the storage device, and
executing the network communication band control in accordance with the band control information.