Author: claimsbot

1. A belt device comprising:
a belt member that is supported by a plurality of rollers and moves in a predetermined moving direction;
a detecting unit that detects a displacement of the belt member in its width direction;
a correcting unit that moves during operation of the belt device, a second end of a first roller among the rollers from a default position of the second end in either one of a forward direction and a backward direction while keeping a first end fixed at a default position of the first end, based on a result of detecting the displacement of the belt member, so that a tilt of a rotating shaft of the first roller is changed to correct a meandering of the belt member; and
a position adjusting unit that adjusts the default position of the first end of the first roller by moving the first end.
2. A belt device comprising:
a belt member that is supported by a plurality of rollers and moves in a predetermined moving direction;
a detecting unit that detects a displacement of the belt member in its width direction;
a first support member that supports a first end of a first roller among the rollers;
a second support member that supports a second end of the first roller;
a frame that supports the second support member;
a correcting unit that corrects, during operation of the belt device, a relative position of the first end with respect to the second end in either one of a forward direction and a backward direction by moving the first support member while fixing a position of the second support member with respect to the frame, based on a result of detecting the displacement of the belt member, so that a tilt of a rotating shaft of the first roller is changed to correct a meandering of the belt member; and
a position adjusting unit that adjusts a position of the second end by moving the second support member with respect to the frame.
3. A belt device comprising:
a belt member that is supported by a plurality of rollers and moves in a predetermined moving direction;
a detecting unit that detects a displacement of the belt member in its width direction;
a first support member that supports a first end of a first roller among the rollers;
a second support member that supports a second end of the first roller and is provided with a long hole;
a frame that supports the second support member and is provided with a female screw portion;
a screw that is screwed in the female screw portion of the frame through the long hole;
a correcting unit that corrects, during operation of the belt device, a position of the first end with respect to the second end in either one of a forward direction and a backward direction by moving the first support member while tightening the screw, based on a result of detecting the displacement of the belt member, so that a tilt of a rotating shaft of the first roller is changed to correct a meandering of the belt member; and
a position adjusting unit that adjusts a position of the second end by moving the second support member with respect to the frame while loosening the screw.
4. A belt device comprising:
a belt member that is supported by a plurality of rollers and moves in a predetermined moving direction;
a detecting unit that detects a displacement of the belt member in its width direction;
a first support member that supports a first end of a first roller among the rollers;
a position adjusting unit that supports a second end of the first roller and is provided with a long hole and screw;
a frame that supports the position adjusting unit and is provided with a female screw portion in which the screw of the frame is screwed through the long hole; and
a correcting unit that corrects, during operation of the belt device, a relative position of the first end with respect to the second end in either one of a forward direction and a backward direction by moving the first support member while tightening the screw, based on a result of detecting the displacement of the belt member, so that a tilt of a rotating shaft of the first roller is changed to correct a meandering of the belt member, wherein
the position adjusting unit adjusts a position of the second end with respect to the frame while loosening the screw.
5. The belt device according to claim 4, wherein
the long hole has a shape of circular arc.
6. The belt device according to claim 4, wherein
the position adjusting unit is a manual adjusting unit that manually adjusts the position of the second end with respect to the frame.
7. The belt device according to claim 4, wherein
the position adjusting unit is arranged on a side where an operation of attaching or removing the belt member is performed.
8. The belt device according to claim 4, wherein
the position adjusting unit adjusts the position of the second by moving the second end in either one of a forward direction and a backward direction.
9. The belt device according to claim 8, wherein
the position adjusting adjusts the position of the second end so that a trajectory of the second end is at least partially coincident with a trajectory of the first end move by the correcting unit.
10. A belt device comprising:
a belt member that is supported by a plurality of rollers and moves in a predetermined moving direction;
a detecting unit that detects a displacement of the belt member in its width direction;
a correcting unit that corrects a meandering of the belt member by moving, during operation of the belt device, a first roller among the rollers around an oscillating center (W), which is located outside the belt member in the width direction of the belt member, and by changing a tilt of a rotating shaft of the first roller, based on a result of detecting the displacement of the belt member, while keeping the oscillating center (W) fixed at a fixing position; and
an adjusting unit that adjusts the fixing position of the oscillating center (W).
11. The belt device according to claim 10, further comprising a frame, wherein
the adjusting unit includes a support member that supports a shaft portion of the first roller at a position outside the belt member in the width direction of the belt member, and
the adjusting unit adjusts the fixing position of the oscillating center (W) with respect to the frame by moving the support member with respect to the frame.
12. The belt device according to claim 10, wherein
the oscillating center (W) is located within a loop of the belt member.
13. The belt device according to claim 12, wherein
the oscillating center (W) is located within the rotating shaft of the first roller.
14. A belt device, comprising:
a belt that is supported by a first roller and at least one more roller, the belt being movable in a predetermined moving direction;
a sensor that detects a displacement of the belt in its width direction;
a cam which moves a first end of the first roller in a first direction, while a second end of the first roller which is opposite to the first end of the roller is fixed, based on a result of detecting the displacement of the belt, so that a tilt of the roller is changed to correct a movement of the belt; and
a screw, which when loose, allows adjustment of a position of the second end of the first roller, and when tight restricts adjustment of the second end of the first roller.
15. The belt device according to claim 14, further comprising:
a support which supports the first end of the first roller,
wherein movement of the cam causes the support to move which causes the first end of the first roller to move.
16. The belt device according to claim 15, wherein:
the support comprises an oscillating arm having a pivot point, about which the oscillating arm rotates.
17. The belt device according to claim 14, wherein:
the cam moves the first end of the first roller in the first direction which is generally perpendicular to an orientation of the belt at a position next to the first roller where the belt does not contact the first roller.
18. The belt device according to claim 14, wherein:
the cam moves the first end of the first roller in the first direction which is an arc shaped direction.
19. The belt device according to claim 14, further comprising:
a movable support which supports the second end of the first roller,
wherein the adjustment of the position of the second end of the first roller occurs by movement of the movable support due to relative movement between a slot through which the screw passes and the screw, when the screw is loose.
20. The belt device according to claim 19, wherein:
the second end of the first roller moves relative to a position of the screw, when the screw is loose.
21. The belt device according to claim 19, further comprising:
a frame which supports the movable support, the frame including a hole into which the screw is secured,
wherein the movable support includes the slot and when the screw is tight, the movable support is fixed relative to the frame.
22. The belt device according to claim 19, wherein:
the movable support moves the second end of the first roller in the first direction which is an arc shaped direction.
23. The belt device according to claim 19, wherein:
the movable support moves the second end of the first roller in the first direction which is a linear direction.
24. The belt device according to claim 14, further comprising:
a movable support which supports the second end of the first roller, wherein the adjustment of the position of the second end of the first roller occurs by movement of the moveable support due to relative movement between a slot through which the screw passes and the screw, when the screw is loose, and wherein the movable support moves the second end of the first roller in the first direction.
25. The belt device according to claim 14, wherein the cam comprises:
an eccentric cam.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

I claim:

1. A junction-isolated lateral MOSFET for a high-low-side switch, comprising:
a semiconductor body of a first conductivity type;
a first main surface and a second main surface substantially opposite said first main surface;
a source zone and a drain zone each of a second conductivity type extending from said first main surface at a distance from one another into said semiconductor body;
a surrounding region of the first conductivity type surrounding said drain zone and said source zone at an outer periphery thereof;
an insulating layer and a gate electrode disposed on said first main surface in a region between said source zone and said drain zone;
a ground connection grounding said semiconductor body at said second main surface;
a region of the first conductivity type extending between said source zone and said drain zone from said first main surface into said semiconductor body, said region of said first conductivity type having a doping concentration between a doping concentration for a breakdown charge and twice the doping concentration for the breakdown charge.
2. The junction-isolated lateral MOSFET according to claim 1, which comprises pillar-shaped regions of the first conductivity type extending from said first main surface to said semiconductor body and embedded in said source zone and said drain zone.
3. The junction-isolated lateral MOSFET according to claim 1, which comprises pillar-shaped regions of the first conductivity type extending parallel to said first and second main surfaces and embedded in said source zone and said drain zone.
4. The junction-isolated lateral MOSFET according to claim 1, which comprises field plates provided for at least one of said source zone and said drain zone.

1. A pattern forming method comprising:
forming a lower layer organic film on a processing target substrate;
forming an upper layer resist film containing an inorganic element on the lower layer organic film;
exposing a desired pattern on the upper layer resist film and then performing development processing to form an opening in the upper layer resist film;
supplying a coating forming agent to the upper layer resist film having the opening formed therein to embed and form a coating film in the opening of the upper layer resist film;
thermally contracting the coating film to narrow the opening of the upper layer resist film;
removing the coating film by dry etching processing and subsequently selectively removing the lower layer organic film with the upper layer resist film being used as a mask, thereby collectively processing the coating film and the lower layer organic film.
2. The pattern forming method according to claim 1, wherein the inorganic element contained in the upper layer resist film is silicon (Si).
3. The pattern forming method according to claim 1, wherein the upper layer resist film has dry etching resisting properties higher than those of the lower layer organic film and the coating film.
4. The pattern forming method according to claim 1, wherein the coating forming agent is a water-soluble resin.
5. The pattern forming method according to claim 1, wherein, as a method of supplying the coating forming agent, pure water is supplied to the upper layer resist film subject to the development processing to effect cleaning processing, and subsequently pure water substitutes for the coating forming agent.
6. The pattern forming method according to claim 1, wherein the lower layer organic film is a coating type carbon film.
7. The pattern forming method according to claim 1, wherein the etching resistance of the resist containing the inorganic element is higher than that of the lower layer organic film.
8. The pattern forming method according to claim 1, wherein the upper layer resist film is configured for ArF.
9. A manufacturing method of a semiconductor device which manufactures the semiconductor device, comprising:
forming a lower layer organic film on a processing target substrate;
forming an upper layer resist film containing an inorganic element on the lower layer organic film;
exposing a desired pattern to the upper layer resist film and then performing development processing to form an opening in the upper layer resist film;
supplying a coating forming agent to the upper layer resist film having the opening formed therein to embed and form a coating film in the opening of the upper layer resist film;
thermally contracting the coating film to narrow the opening of the upper layer resist film; and
removing the coating film by dry etching processing and subsequently selectively removing the lower layer organic film with the upper layer resist film being used as a mask, thereby collectively processing the coating film and the lower layer organic film.
10. The manufacturing method of a semiconductor device according to claim 9, wherein the inorganic element contained in the upper layer resist film is silicon (Si).
11. The manufacturing method of a semiconductor device according to claim 9, wherein the upper layer resist film has dry etching resisting properties higher than those of the lower layer organic film and the coating film.
12. The manufacturing method of a semiconductor device method according to claim 9, wherein the coating forming agent is a water-soluble resin.
13. The manufacturing method of a semiconductor device according to claim 9, wherein, as a method of supplying the coating forming agent, pure water is supplied to the upper layer resist film subject to the development processing to effect cleaning processing, and subsequently pure water substitutes for the coating forming agent.
14. The manufacturing method of a semiconductor device according to claim 9, wherein the lower layer organic film is a coating type carbon film.
15. The manufacturing method of a semiconductor device according to claim 9, wherein the etching resistance of the resist containing the inorganic element is higher than that of the lower layer organic film.
16. The manufacturing method of a semiconductor device according to claim 9, wherein the upper layer resist film is configured for ArF.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A fabricating method of a memory device, the fabricating method comprising:
providing a substrate comprising a first portion and a second portion;
forming a plurality of semiconductor fin structures on the substrate of the first portion, wherein each of the semiconductor fin structures extends in a first direction and comprises a first doped region and a body region on which the first doped region is disposed, and a trench is formed between two adjacent semiconductor fin structures;
forming a second doped region in the substrate under the body regions of the semiconductor fin structures and the trench, wherein the second doped region extends into the substrate of the second portion;
forming a plurality of word lines on the substrate, wherein each of the word lines extends in a second direction and covers a portion of a sidewall and a portion of a top of each of the semiconductor fin structures, and the second direction is different from the first direction;
forming a charge storage layer between the semiconductor fin structures and the word lines;
forming a plurality of first contacts on the second portion of the substrate, wherein the first contacts are arranged in the first direction and each of the first contacts is electrically connected with the second doped region; and
forming a plurality of second contacts on the first portion of the substrate, wherein each of the second contacts is electrically connected with the corresponding first doped region.
2. The fabricating method according to claim 1, wherein a method of forming the semiconductor fin structures comprises:
forming a doped layer on the substrate; and
patterning the doped layer and the substrate to form the semiconductor fin structures.
3. The fabricating method according to claim 2, further comprising:
forming a hard mask layer on the doped layer and forming a patterned mask layer on the hard mask layer before patterning the doped layer and the substrate; and
patterning the hard mask layer, the doped layer, and the substrate with the patterned mask layer as a mask to form a plurality of patterned hard mask layers, the first doped regions, and the body regions.
4. The fabricating method according to claim 3, wherein the hard mask layer comprises an oxide layer and a nitride layer.
5. The fabricating method according to claim 3, wherein a material of the hard mask layer comprises silicon oxide, silicon nitride, an advanced patterning film, or a combination thereof.
6. The fabricating method according to claim 3, wherein a method of forming the second doped region comprises:
performing an ion implantation process on the substrate with the patterned hard mask layers as masks to implant a dopant in the substrate and form the second doped region.
7. The fabricating method according to claim 6, further comprising: performing a thermal annealing process to cause the dopant to form the second doped region.
8. The fabricating method according to claim 7, further comprising: removing the patterned hard mask layers.
9. The fabricating method according to claim 1, wherein the method of forming the semiconductor fin structures comprises:
forming a stack layer on the substrate, wherein the stack layer comprises a first doped layer, a body layer, and a second doped layer in sequence from bottom to top; and
patterning the first doped layer and the body layer to form the semiconductor fin structures, wherein the second doped layer serves as the second doped region.
10. The fabricating method according to claim 9, wherein the stack layer comprises the first doped layer, a first barrier layer, the body layer, a second barrier layer, and the second doped layer in sequence from bottom to top.
11. The fabricating method according to claim 10, wherein a material of the barrier layer comprises oxide, nitride, oxynitride, or a combination thereof.
12. The fabricating method according to claim 1, wherein two bottom corners of each trench are right angles, chamfer angles, or round angles.
13. The fabricating method according to claim 1, further comprising:
forming a plurality of isolation structures in the second portion of the substrate; and
forming a third doped region in the substrate between the isolation structures, wherein the third doped region is electrically connected with the second doped region,
wherein each of the first contacts is electrically connected with the second doped region through the third doped region.
14. The fabricating method according to claim 1, further comprising: forming a plurality of contact holes in the substrate of the second portion, wherein a bottom of each of the contact holes exposes the second doped region, and each of the first contacts is electrically connected with the second doped region at the bottom of the corresponding contact hole.
15. The fabricating method according to claim 1, wherein a material of the charge storage layer comprises silicon oxide, silicon nitride, or a combination thereof.
16. The fabricating method according to claim 1, wherein the second doped region connects each of the semiconductor fin structures.
17. The fabricating method according to claim 1, wherein the first doped region, the second doped region, and the third doped region are a first conductivity type; and the body region is a second conductivity type, wherein the first conductivity type and the second conductivity type are different.