1460721538-560eca15-72b1-402e-8003-893917a3ba1f

1. A structure of package on package comprising:
a first package comprising a first substrate and a first chip disposed thereon;
a second package comprising a second substrate and a second chip disposed thereon, the second package disposed under the first package, the second substrate having a plurality of holes; and
a plurality of pins disposed on the first package and inserted in the holes for electrically connecting the first package and the second package.
2. The structure of package on package according to claim 1, wherein the second package further comprises a plurality of conductive receptacles disposed in the holes of the second substrate;
wherein the pins are inserted in the conductive receptacles.
3. The structure of package on package according to claim 1, wherein the second package further comprises:
a second inner circuit formed in the second substrate, wherein the second chip is electrically connected with the second inner circuit;
a second molding material encapsulating at least a portion of the second substrate and the second chip; and
a plurality of solder balls disposed on a lower surface of the second substrate;
wherein the holes are formed on an upper surface of the second substrate and expose the second inner circuit.
4. The structure of package on package according to claim 1, wherein the first package further comprises:
a first inner circuit formed in the first substrate and electrically connected to the first chip; and
a first molding material encapsulating at least a portion of the first substrate and the first chip;
wherein the pins are disposed on a lower surface of the first substrate and electrically connected with the first inner circuit.
5. A structure of package on package comprising:
a first package comprising a first substrate and a first chip disposed thereon;
a second package comprising a second substrate and a second chip disposed thereon, the second package disposed under the first package;
a plurality of first pins disposed on the first package;
a plurality of second pins disposed on the second package; and
a connecting component interposed between the first pins and the second pins for electrically connecting the first package and the second package.
6. The structure of package on package according to claim 5, wherein the connecting component comprises:
a first clamp for clamping the first pins;
a second clamp for clamping the second pins; and
a conductive part disposed between the first clamp and the second clamp for electrically connecting the second pins clamped by the second clamp and the first pins clamped by the first clamp.
7. The structure of package on package according to claim 5, wherein the first package further comprises:
a first inner circuit formed in the first substrate and electrically connected to the first chip; and
a first molding material encapsulating at least a portion of the first substrate and the first chip;
wherein the first pins are disposed on a lower surface of the first substrate and electrically connected with the first inner circuit.
8. The structure of package on package according to claim 5, wherein the second package further comprises:
a second inner circuit formed in the second substrate and electrically connected to the second chip;
a second molding material encapsulating at least a portion of the second substrate and the second chip; and
a plurality of solder balls disposed on a lower surface of the first substrate;
wherein the second pins are disposed on an upper surface of the second substrate and electrically connected with the second inner circuit.
9. A method for fabricating a package on package, the method comprising:
providing a first package, in which a first chip is disposed on and electrically connected to a first substrate;
providing a second package, in which a second chip is disposed on and electrically connected to a second substrate;
disposing a plurality of first pins on the first substrate;
disposing a plurality of second pins on the second substrate;
disposing a connecting component to hold the second pins; and
correspondingly inserting the first pins in the connecting component so as to electrically connect the first package with the second package.
10. The method according to claim 9, wherein the step of providing the first package further comprises:
forming a first inner circuit in the first substrate;
wherein the first pins are electrically connected with the first inner circuit and disposed on a lower surface of the first substrate.
11. The method according to claim 9, wherein the step of providing the first package further comprises:
over molding at least a portion of the first substrate and the first chip by a first molding material.
12. The method according to claim 9, wherein the step of providing the second package further comprises:
forming a second inner circuit in the second substrate;
wherein the second pins are formed on an upper surface of the second substrate, and electrically connected with the second inner circuit.
13. The method according to claim 9, wherein the step of providing the second package further comprises:
over molding at least a portion of the second substrate and the second chip by a second molding material.
14. A method for fabricating a package on package, the method comprising:
providing a first package, in which a first chip is disposed on and electrically connected to a first substrate;
providing a second package, in which a second chip is disposed on and electrically connected to a second substrate;
disposing a plurality of pins on the first substrate;
forming a plurality of holes in the second substrate; and
inserting the pins in the holes for electrically connecting the first package and the second package.
15. The method according to claim 14 further comprising:
forming a second inner circuit in the second substrate, wherein the holes expose the second inner circuit;
forming a plurality of conductive receptacles in the holes; and
inserting the pins in the conductive receptacles;
wherein the pins are electrically connected with the second inner circuit when the pins are inserted in the conductive receptacles.
16. The method according to claim 14, wherein the step of providing the second package further comprises:
over molding at least a portion of the second substrate and the second chips by a second molding material.
17. The method according to claim 14, wherein the step of providing the first package further comprises:
forming a first inner circuit in the first substrate;
wherein the pins are electrically connected with the first inner circuit and disposed on a lower surface of the first substrate.
18. The method according to claim 14, wherein the step of providing the first package further comprises:
over molding at least a portion of the first substrate and the first chip by a first molding material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A polymeric structure derived from a hydroxyl polymer-containing composition comprising:
a. an aqueous mixture comprising a hydroxyl polymer; and
b. a hydrophile component comprising an organosulfosuccinate.
2. The polymeric structure according to claim 1 wherein the hydroxyl polymer-containing composition further comprises a crosslinking system comprising a crosslinking agent.
3. The polymeric structure according to claim 1 wherein the hydroxyl polymer-containing composition further comprises a lipophile component.
4. The polymeric structure according to claim 3 wherein the hydrophile component facilitates dispersibility of the lipophile component in the aqueous mixture.
5. The polymeric structure according to claim 1 wherein the polymeric structure exhibits a contact angle of less than about 40\xb0 after 1 second.
6. The polymeric structure according to claim 1 wherein the polymeric structure is in the form of a fiber having a diameter of less than about 50 \u03bcm.
7. The polymeric structure according to claim 1 wherein the hydroxyl polymer comprises a hydroxyl polymer selected from the group consisting of: starch, starch derivatives, cellulose derivatives, chitosan, chitosan derivatives, polyvinylalcohols, gums, arabinans, galactans, proteins and mixtures thereof.
8. The polymeric structure according to claim 7 wherein the hydroxyl polymer comprises starch.
9. A fibrous structure comprising one or more polymeric structures according to claim 1 wherein at least one of the polymeric structures is in the form of a fiber form.
10. A single- or multi-ply sanitary tissue product comprising a fibrous structure according to claim 9.
11. The single- or multi-ply sanitary tissue product according to claim 10 wherein the tissue product exhibits a wet yield stress of from about 1000 to about 6000 Pa at a strain of at least about 1 to about 10.
12. The single- or multi-ply sanitary tissue product according to claim 10 wherein the tissue product exhibits a wet bulk of at least about 40% of the dry bulk.
13. A method for making the polymeric structure according to claim 1 comprising the steps of:
a. providing a hydroxyl polymer-containing composition comprising an aqueous mixture comprising a hydroxyl polymer and a hydrophile component comprising a sulfosuccinate; and
b. polymer processing the hydroxyl polymer-containing composition to form the polymeric structure.
14. The method according to claim 13 wherein the aqueous mixture further comprises a crosslinking system comprising a crosslinking agent.
15. The method according to claim 13 wherein the sulfosuccinate comprises an organosulfosuccinate.
16. A polymeric structure in the form of a fiber produced according to the method of claim 13.

1460721529-0342e0a0-0c9b-4278-8ba5-942d91e52bcc

1-6. (canceled)
7. A process for purifying 2-chloro-5-chloromethyl-1,3-thiazole represented by the formula (I):
which comprises:
treating a crude 2-chloro-5-chloromethyl-1,3-thiazole represented by the formula (I) with a lower alcohol, and then
distilling the treated 2-chloro-5-chloromethyl-1,3-thiazole.
8. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 7, wherein the crude 2-chloro-5-chloromethyl-1,3-thiazole is treated with the lower alcohol by adding the lower alcohol to the crude 2-chloro-5-chloromethyl-1,3-thiazole, followed by stirring.
9. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 7, wherein the crude 2-chloro-5-chloromethyl-1,3-thiazole is a reaction mixture obtained by reacting a 2-halogenoallyl isothiocyanate represented by the general formula (II):
wherein Hal represents a chlorine atom or a bromine atom, with a chlorinating agent in the presence of a solvent, or
wherein the crude 2-chloro-5-chloromethyl-1,3-thiazole is a residue obtained by distilling the solvent from the reaction mixture.
10. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 9, wherein the crude 2-chloro-5-chloromethyl-1,3-thiazole is a residue obtained by distilling the solvent from the reaction mixture.
11. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 7, wherein the lower alcohol is methanol.
12. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 8, wherein the lower alcohol is methanol.
13. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 9, wherein the lower alcohol is methanol.
14. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 10, wherein the lower alcohol is methanol.
15. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 9, wherein Hal is a chlorine atom.
16. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 10, wherein Hal is a chlorine atom.
17. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 13, wherein Hal is a chlorine atom.
18. The process for purifying 2-chloro-5-chloromethyl-1,3-thiazole according to claim 14, wherein Hal is a chlorine atom.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A light emitting device comprising:
at least one single-die semiconductor light-emitting device coupleable with a power supply to emit visible light, the light-emitting device comprising:
a substrate; and
a plurality of layers of rare-earth doped group IV nanocrystal material (REGIVN);
wherein each layer comprises a different rare earth dopant for collectively emitting a visible light output when energized.
2. The light emitting device of claim 1 wherein the visible light is a white light.
3. The light emitting device of claim 1 wherein the REGIVN is a silicon or silicon carbide nanocrystal material.
4. The light emitting device of claim 1, wherein at least one layer comprises a respective rare earth dopant for each of red, blue and green.
5. The light emitting device of claim 1, wherein the plurality of layers comprises three layers with each layer containing a respective rare earth dopant for one of red, blue and green.
6. The light emitting device of claim 1, wherein the plurality of layers comprises three layers with each layer containing a respective rare earth dopant.
7. The light emitting device of claim 5 wherein the three layers are stacked on top of each other.
8. The light emitting device of claim 5 wherein the three layers are arranged adjacent to each other.
9. The light emitting device of claim 1, wherein said plurality of layers comprises:
a first layer doped with a group IV dopant selected from a group consisting of erbium, terbium and yttrium to provide green light;
a second layer doped with a group IV dopant selected from a group consisting of thulium and cerium to provide blue light; and
a third layer doped with a group IV dopant selected from a group consisting of europium and prasodymium to provide red light.
10. The light emitting device of claim 1, wherein said plurality of layers comprises:
a first layer doped with erbium to provide green and blue light; and
a second undoped layer of silicon nanocrystal material to provide red light.
11. The light emitting device of claim 1, wherein said plurality of layers comprises:
a first layer doped with erbium to provide green and blue light; and
a second layer doped with a group IV dopant selected from a group consisting of europium and prasodymium to provide red light.
12. The light emitting device of claim 1 further comprising a first electrode and a second transparent electrode across which a power supply signal can be applied to energize the light emitting device.
13. The light emitting device of claim 12 wherein the first electrode is a transparent conductive oxide electrode or semitransparent metal electrode.
14. The light emitting device of claim 1, wherein the substrate is a conductive substrate.
15. The light emitting device of claim 14 wherein the substrate is made of a material selected from a group consisting of SiC, GaN and ZnO.
16. The light emitting device of claim 1, wherein the substrate is a substantially non-conductive substrate.
17. The light emitting device of claim 16 wherein the substrate is made of a material selected from a group consisting of sapphire, silicon dioxide, fuse silica and AlN.
18. The light emitting device of claim 1, further comprising a housing member formed of a light-transmissive material, said housing member defining therewithin an interior volume.
19. The light emitting device of claim 18 further comprising first and second electrical contacts extending through said housing member and coupleable to a power supply which is constructed and arranged for imposing a voltage on said light emitting device, to induce emission of said white light.
20. An array of light emitting devices according to claim 1 and a user-responsive controller for selectively illuminating specific ones of said light-emitting devices.
21. A light emitting device according to claim 1 further comprising:
group II-VI or III-V nanocrystal material arranged to receive light emitted by the rare earth doped group IV nanocrystal material as a pump light source, the group II-VI or III-V nanocrystals fluorescing at a plurality of wavelengths when energized by the pump light source.
22. A light emitting device according to claim 21, comprising:
at least one layer of group II-VI or III-V nanocrystals arranged to receive light emitted by the at least one layer containing rare earth doped group IV nanocrystal material as a pump light source, the group II-VI or III-V nanocrystals fluorescing at a plurality of wavelengths when energized by the pump light source.
23. A light emitting device according to claim 22 wherein the group II-VI or III-V nanocrystals are selected from a group consisting of ZnS, CdS, ZnSe, CdSe, GaN, InP and GaP.
24. A light emitting device according to claim 22 wherein the plurality of wavelengths collectively produce white light.
25. A light emitting device according to claim 22, further comprising a top electrical contact layer wherein the layers are arranged in sequence as follows:
the substrate;
the at least one layer containing rare earth doped group IV nanocrystal material;
the top electrical contact layer; and
the at least one layer containing group II or VI nanocrystals;
wherein the at least one layer containing group II or VI nanocrystals uses photon energy to drive the nanocrystals.
26. A light emitting device according to claim 22, further comprising a top electrical contact layer, the layers arranged in sequence as follows:
the substrate;
the at least one layer containing rare earth doped group IV nanocrystal material;
the at least one layer containing group II or VI nanocrystals; and
the top electrical contact layer;
wherein the at least one layer containing group II or VI nanocrystals uses both electrical energy and photon energy to drive the nanocrystals.
27. A light-emitting device according to claim 1, wherein said device has a multi-layer structure comprising layers selected from the group consisting of nanocrystals of group IV, II-VI and III-V.
28. A light-emitting device according to claim 22, wherein primary radiation produced by the plurality of layers containing REDGIVN is down-converted by the at least one layer of group II-VI or III-V nanocrystals to at least two distinct and separable regions of red andor green andor blue light, with said at least two regions of red andor green andor blue light mixing to produce a different colored output.
29. A light-emitting device according to claim 22, wherein primary radiation produced by the plurality of layers containing REDGIVN is down-converted by the at least one layer of group II or VI nanocrystals to between 2 and 10 distinct and separable regions of white light and light of the color hue red, green or blue light.
30. A liquid crystal display comprising:
a backlight member including a multiplicity of light-emitting devices in accordance with claim 1.
31. The LCD of claim 30, further comprising:
at least one layer of group II or VI nanocrystals arranged to receive light emitted by the plurality of layers containing rare earth doped group IV nanocrystal material as a pump light source, the group II or VI nanocrystals fluorescing at a plurality of wavelengths when energized by the pump light source.
32. A display, comprising:
a viewable panel including a multiplicity of light-emitting devices, each light-emitting device comprising;
at least one single-die semiconductor light-emitting device in accordance with claim 1.
33. The display of claim 32, wherein each said at least one single-die semiconductor light-emitting device further comprises;
at least one layer of group II or VI nanocrystals arranged to receive light emitted by the plurality of layers containing rare earth doped group IV nanocrystal material as a pump light source, the group II or VI nanocrystals fluorescing at a plurality of wavelengths when energized by the pump light source.
34. A light emitting device comprising:
at least one single-die semiconductor light-emitting device coupleable with a power supply to emit visible light, the light-emitting device comprising rare-earth doped group IV nanocrystal material (REGIVN); and
at least one layer of group II-VI or III-V nanocrystals arranged to receive light emitted by the at least one layer containing rare earth doped group IV nanocrystal material as a pump light source, the group II-VI or III-V nanocrystals fluorescing at a plurality of wavelengths when energized by the pump light source;
wherein primary radiation produced by the at least one layer containing REDGIVN is down-converted by the at least one layer of group II-VI or III-V nanocrystals to at least two distinct and separable regions of red andor green andor blue light, with said at least two regions of red andor green andor blue light mixing to produce a different colored output.
35. A light emitting device comprising:
at least one single-die semiconductor light-emitting device coupleable with a power supply to emit visible light, the light-emitting device comprising rare-earth doped group IV nanocrystal material (REGIVN); and
at least one layer of group II-VI or III-V nanocrystals arranged to receive light emitted by the at least one layer containing rare earth doped group IV nanocrystal material as a pump light source, the group II-VI or III-V nanocrystals fluorescing at a plurality of wavelengths when energized by the pump light source;
wherein primary radiation produced by the at least one layer containing REDGIVN is down-converted by the at least one layer of group II or VI nanocrystals to between 2 and 10 distinct and separable regions of white light and light of the color hue red, green or blue light.