Author: claimsbot

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) forming a first substantially H-shaped mask material and a second substantially H-shaped mask material on a main surface of a semiconductor substrate, said first mask material having a first portion, a second portion, and a third portion connected in that order along a first direction in plan view and wherein a dimension of said second portion with respect to a second direction in plan view that is perpendicular to said first direction is smaller than dimensions of said first and third portions with respect to said second direction, said second mask material having a fourth portion, a fifth portion, and a sixth portion connected in that order along said first direction and wherein a dimension of said fifth portion with respect to said second direction is smaller than dimensions of said fourth and sixth portions with respect to said second direction, so that said first and fourth portions, said second and fifth portions, and said third and sixth portions are each mutually spaced apart and aligned along said second direction;
(b) etching said semiconductor substrate using said first and second mask materials as etch masks, to form in said main surface a recessed portion having a first side surface, a second side surface, and a third side surface that are defined by said semiconductor substrate below said first to third portions, and a fourth side surface, a fifth side surface, and a sixth side surface that are defined by said semiconductor substrate below said fourth to sixth portions;
(c) implanting impurity ions in said second direction from diagonally above, with said first and second mask materials being formed on said main surface, to form first doped channel regions of a first conductive type only in said second and fifth side surfaces among said first to sixth side surfaces;
(d) forming an element isolating insulation film by filling said recessed portion to define respective portions of said semiconductor substrate where said first and second mask materials are formed in said step (a) as a first element forming region and a second element forming region, said step (d) being performed after said step (c);
(e) forming second doped channel regions of said first conductive type respectively within said main surface that is in said first and second element forming regions;
(f) removing said first and second mask materials, said step (f) being performed after said step (c);
(g) forming an insulating film on said main surface that is in said first and second element forming regions, said step (g) being performed after said step (f);
(h) forming a conductive film on a structure obtained by said step (g);
(i) patterning said conductive film to form a gate electrode above said main surface on which said second and fifth portions are formed in said step (a), said gate electrode extending along said second direction;
(j) forming first source-drain regions of a second conductive type being different from said first conductive type, in said main surface in which said first and fourth portions are formed in said step (a); and
(k) forming second source-drain regions of said second conductive type in said main surface in which said third and sixth portions are formed in said step (a).
2. The method according to claim 1, wherein the following relationship holds:
tan\u22121(W2T)<\u03b1\u2266tan\u22121(W1T)
where W2 is an interval between said first portion and said fourth portion and an interval between said third portion and said sixth portion; W1 is an interval between said second portion and said fifth portion; \u03b1 is an angle formed by an implant direction of said impurity in said step (c) and a direction of the normal to said main surface; and T is a film thickness of said first and second mask materials.
3. The method according to claim 1, further comprising the steps of:
(l) forming an interlayer dielectric film, said step (l) being performed after said steps (i) through (k);
(m) forming, in said interlayer dielectric film, contact holes connected to said second source-drain regions;
(n) forming electrically conductive plugs in said contact holes;
(o) forming a capacitor lower electrode connected to said electrically conductive plugs;
(p) forming a capacitor dielectric film on said capacitor lower electrode; and
(q) forming a capacitor upper electrode on said capacitor dielectric film.
4. The method according to claim 3, wherein:
said electrically conductive plugs are made of a semiconductor to which an impurity of said second conductive type is added; and
further comprising the step of (r) introducing an impurity into said main surface through said contact holes to form an impurity-introduced region of said second conductive type, said step (r) being performed between said steps (m) and (n).
5. The method according to claim 3, wherein:
in said step (a), a third mask material is further formed on said main surface, said third mask material opposing and spaced apart from said third portion and aligned with said first mask material along said first direction;
in said step (b), said semiconductor substrate is etched using said first to third mask materials as an etch mask, whereby said recessed portion is formed; and
further comprising the step of (s) implanting ions of an impurity in said first direction from diagonally above, with said first and third mask materials being formed on said main surface, to form an impurity-implanted region of said second conductive type in said third side surface, said step (s) being performed before said step (d).
6. The method according to claim 5, wherein:
tan\u22121(VU)\u2266\u03b2\u2266tan\u22121(VT)
is satisfied, where V is an interval between said first mask material and said third mask material; \u03b2 is an angle formed by an implant direction of said impurity in said step (s) and a direction of the normal to said main surface; T is a film thickness of said third mask material; and U is a depth from an upper surface of said third mask material to a bottom surface of said recessed portion.
7. The method according to claim 3, further comprising the step of (t) introducing an impurity into a bottom surface of said recessed portion through said recessed portion to form a first channel cut region of said first conductive type, said step (t) being performed after said step (b) and before said step (d).
8. The method according to claim 7, wherein:
said semiconductor substrate has a memory cell array section and a peripheral circuit section;
said first channel cut region is formed in said memory cell array section; and
further comprising the step of (u) forming a mask material so as to cover said peripheral circuit section, said step (u) being performed before said step (t).
9. The method according to claim 7, wherein:
said semiconductor substrate has a memory cell array section and a peripheral circuit section;
said first channel cut region is formed in said memory cell array section;
in said step (t), said impurity is introduced also into said peripheral circuit section to form a second channel cut region in said peripheral circuit section; and
further comprising the step of (v) introducing an impurity of said second conductive type into said peripheral circuit section to cancel out said second channel cut region, said step (v) being performed after said step (t).
10. The method according to claim 1, wherein said step (e) is performed after said step (g).
11. A method of manufacturing a semiconductor device, comprising the steps of:
(a) forming a first mask material, a second mask material, and a third mask material on a main surface of a semiconductor substrate, said first mask material having a first portion, a second portion, and a third portion connected in that order along a first direction in plan view, said second mask material having a fourth portion, a fifth portion, and a sixth portion connected in that order along said first direction, and said third mask material having a seventh portion, an eighth portion, and a ninth portion connected in that order along said first direction, so that said third, fourth and ninth portions are mutually spaced apart and aligned in that order along a second direction in plan view that is perpendicular to said first direction, that said second and eighth portions are mutually spaced apart and aligned along said second direction, and that said second and fifth portions are not aligned along said second direction;
(b) etching said semiconductor substrate using said first to third mask materials as an etch mask to form in said main surface a recessed portion having a first side surface, a second side surface, and a third side surface that are defined by said semiconductor substrate below said first to third portions, respectively, a fourth side surface, a fifth side surface, and a sixth side surface that are defined by said semiconductor substrate below said fourth to sixth portions, respectively, and a seventh side surface, an eighth side surface, and a ninth side surface that are defined by said semiconductor substrate below said seventh to ninth portions;
(c) implanting impurity ions in said second direction from diagonally above, with said first to third mask materials being formed on said main surface, to form first doped channel regions of a first conductive type only in said second side surface of said second and third side surfaces, only in said fifth side surface of said fourth and fifth side surfaces, and only in said eighth side surface of said eighth and ninth side surfaces;
(d) forming an element isolating insulation film by filling said recessed portion to define respective portions of said semiconductor substrate where said first to third mask materials are formed in said step (a) as a first element forming region, a second element forming region, and a third element forming region, said step (d) being performed after said step (c);
(e) forming second doped channel regions of said first conductive type within said main surface that is in said first to third element forming regions, respectively;
(f) removing said first to third mask materials, said step (f) being performed after said step (c);
(g) forming an insulating film on said main surface that is in said first to third element forming regions, said step (g) being performed after said step (f);
(h) forming a conductive film on a structure obtained by said step (g);
(i) patterning said conductive film to form a gate electrode above said main surface on which said second, fifth, and eighth portions are formed in said step (a), said gate electrode extending along said second direction;
(j) forming first source-drain regions of a second conductive type being different from said first conductive type, in said main surface in which said first, sixth, and seventh portions are formed in said step (a); and
(k) forming second source-drain regions of said second conductive type in said main surface in which said third, forth, and ninth portions are formed in said step (a).
12. The method according to claim 11, wherein the following relationship holds:
tan\u22121(W2T)<\u03b1\u2266tan\u22121(W1T)
where W2 is an interval between said third portion and said fourth portion and an interval between said fourth portion and said ninth portion; W1 is an interval between said second portion and said eighth portion; \u03b1 is an angle formed by an implant direction of said impurity in said step (c) and a direction of the normal to said main surface; and T is a film thickness of said first to third mask materials.
13. The method according to claim 11, further comprising the steps of:
(l) forming an interlayer dielectric film, said step (l) being performed after said steps (i) through (k);
(m) forming, in said interlayer dielectric film, contact holes connected to said second source-drain regions;
(n) forming electrically conductive plugs in said contact holes;
(o) forming a capacitor lower electrode connected to said electrically conductive plugs;
(p) forming a capacitor dielectric film on said capacitor lower electrode; and
(q) forming a capacitor upper electrode on said capacitor dielectric film.
14. The method according to claim 13, wherein:
said electrically conductive plugs are made of a semiconductor to which an impurity of said second conductive type is added; and
further comprising the step of (r) introducing an impurity into said main surface through said contact holes to form an impurity-introduced region of said second conductive type, said step (r) being performed between said steps (m) and (n).
15. The method according to claim 13, wherein:
in said step (a), a fourth mask material is further formed on said main surface, said fourth mask material opposing and spaced apart from said third portion and aligned with said first mask material along said first direction;
in said step (b), said semiconductor substrate is etched using said first to fourth mask materials as an etch mask, whereby said recessed portion is formed; and
further comprising the step of (s) implanting ions of an impurity in said first direction from diagonally above, with said first and fourth mask materials being formed on said main surface, to form an impurity-implanted region of said second conductive type in said third side surface, said step (s) being performed before said step (d).
16. The method according to claim 15, wherein the following relationship holds:
tan\u22121(VU)\u2266\u03b2\u2266tan\u22121(VT)
where V is an interval between said first mask material and said fourth mask material; \u03b2 is an angle formed by an implant direction of said impurity in said step (s) and a direction of the normal to said main surface; T is a film thickness of said fourth mask material; and U is a depth from an upper surface of said fourth mask material to a bottom surface of said recessed portion.
17. The method according to claim 13, further comprising the step of (t) introducing an impurity into a bottom surface of said recessed portion through said recessed portion to form a first channel cut region of said first conductive type, said step (t) being performed after said step (b) and before said step (d).
18. The method according to claim 17, wherein:
said semiconductor substrate has a memory cell array section and a peripheral circuit section;
said first channel cut region is formed in said memory cell array section; and
further comprising the step of (u) forming a mask material so as to cover said peripheral circuit section, said step (u) being performed before said step (t).
19. The method according to claim 17, wherein:
said semiconductor substrate has a memory cell array section and a peripheral circuit section;
said first channel cut region is formed in said memory cell array section;
in said step (t), said impurity is introduced also into said peripheral circuit section to form a second channel cut region in said peripheral circuit section; and
further comprising the step of (v) introducing an impurity of said second conductive type into said peripheral circuit section to cancel out said second channel cut region, said step (v) being performed after said step (t).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of auditing a compiled application, said method comprising:
analyzing said compiled application to identify a method that may be called during execution of said compiled application;
selecting a stored reference, where said stored reference relates to a predetermined method and said predetermined method is associated with an activity;
determining whether said predetermined method matches said method that may be called during execution of said compiled application; and
where said predetermined method matches said method that may be called during execution of said compiled application, indicating that said compiled application may attempt said activity.
2. The method of claim 1 further comprising:
creating a document; and
responsive to said analyzing having identified said method that may be called during execution of said compiled application, writing, to said document, a reference to said method that may be called during execution of said compiled application.
3. The method of claim 2 wherein said determining whether said predetermined method matches said method that may be called during execution of said compiled application comprises searching said document for a candidate reference, where said candidate reference relates to said method that may be called during execution of said compiled application and said candidate reference matches said stored reference.
4. The method of claim 1 further comprising indicating a current permission setting associated with said activity in conjunction with said indicating that said compiled application may attempt said activity.
5. The method of claim 1 wherein said indicating comprises writing to a display.
6. The method of claim 1 wherein said indicating comprises writing to a further document.
7. The method of claim 6 where said further document is coded in hyper-text markup language and said indicating further comprises transmitting said further document over a network connection.
8. The method of claim 1 wherein said activity is accessing a Universal Serial Port.
9. The method of claim 1 wherein said activity is accessing a Bluetooth\u2122 connection.
10. The method of claim 1 wherein said activity is accessing a voice telephony connection.
11. The method of claim 1 wherein said activity is accessing a company network connection.
12. The method of claim 1 wherein said activity is accessing an Internet connection.
13. The method of claim 1 wherein said activity is communicating with another executing process.
14. The method of claim 1 wherein said activity is injecting keystrokes.
15. The method of claim 1 wherein said activity is accessing browser filters.
16. The method of claim 1 wherein said activity is accessing user data.
17. The method of claim 16 wherein said user data is e-mail messages.
18. The method of claim 16 wherein said user data is calendar data.
19. The method of claim 16 wherein said user data is contact information.
20. The method of claim 1 further comprising, before said analyzing:
receiving an indication of selection of said compiled application;
receiving an instruction to analyze said compiled application; and
initializing said analyzing.
21. The method of claim 1 further comprising, before said analyzing:
receiving said compiled application from a remote source;
storing said compiled application; and
initializing said analyzing.
22. A computing apparatus for auditing a compiled application, said computing apparatus comprising a processor adapted to:
analyze said compiled application to identify a method that may be called during execution of said compiled application;
select a stored reference, where said stored reference relates to a predetermined method and said predetermined method is associated with an activity;
determine whether said predetermined method matches said method that may be called during execution of said compiled application; and
indicate that said compiled application may attempt said activity, where said predetermined method matches said method that may be called during execution of said compiled application.
23. A computer readable medium containing computer-executable instructions that, when performed by processor, cause said processor to:
analyze a compiled application to identify a method that may be called during execution of said compiled application;
select a stored reference, where said stored reference relates to a predetermined method and said predetermined method is associated with an activity;
determine whether said predetermined method matches said method that may be called during execution of said compiled application; and
indicate that said compiled application may attempt said activity, where said predetermined method matches said method that may be called during execution of said compiled application.

1. A computing system comprising:
a server configured to stream an application install package; and
a client comprising:
a virtual environment within which processes may execute, and a non-virtual system environment within which processes may execute; and
a process table which identifies processes configured to run in the virtual environment;
wherein responsive to a request to install said application in the virtual environment, the client is configured to:
start an installer component in a suspended state in the non-virtual system environment;
register the installer component in the virtual environment; and
resume execution of the installer component in the virtual environment;
wherein subsequent to resuming execution, the installer component is configured to:
begin installation of the application in the virtual environment; and
initiate an attempt to perform an action configured to affect a file system or registry of the non-virtual system environment;
wherein responsive to detecting said attempt, a virtualization manager is configured to:
access the process table;
compare a process ID of the given process to process IDs in the process table;
permit the given process to access the non-virtual system environment, in response to determining the process table indicates the process ID is not associated with the virtual environment; and
prevent the given process from accessing the non-virtual system environment, in response to determining the process table indicates the process ID is associated with the virtual environment.
2. The computing system of claim 1, wherein subsequent to installing the application in the virtual environment the client is configured to unregister the installer service from the virtual environment and register the installer service in the non-virtual system environment.
3. The computing system of claim 1, wherein the client is further configured to receive instructions from the server that identify a virtual environment into which to install the install package.
4. The computing system of claim 2,
wherein the server is configured to stream the install package to the client as a series of streamlets;
wherein the installer component is configured to extract data from a streamlet and issue a write request to write the data into the virtual environment; and
a driver outside of the virtual environment is configured to detect the write request.
5. The computing system of claim 4, wherein in response to detecting the write request, the driver is further configured to:
determine if the file is a sparse file; and
if the file is a sparse file:
register the file as a sparse file; and
allocate an amount of storage space for the sparse file that is sufficient to store a non-sparse file that corresponds to the sparse file.
6. The computing system of claim 5,
wherein the sparse file includes a marker identifying a location from which the non-sparse file data may be retrieved; and
wherein in response to detecting a read request to read the sparse file, the driver is configured to retrieve the non-sparse file data from said location.
7. The computing system of claim 1, wherein in response to detecting said attempt and determining the process table indicates the process ID is associated with the virtual environment, the virtualization manager is further configured to redirect said action so that it affects the virtual environment instead of the non-virtual system environment.
8. A computer implemented method of streaming an install package into a virtual environment, the method comprising:
starting an installer component in a suspended state in a non-virtual system environment of a client, said non-virtual system environment being an environment within which processes may execute;
registering the installer component in a virtual environment of the client, said virtual environment being an environment within which processes may execute;
maintaining a process table which identifies processes configured to run in the virtual environment;
resuming execution of the installer component in the virtual environment;
subsequent to resuming execution in the virtual environment, the installer component:
beginning installation of the application in the virtual environment; and
initiating an attempt to perform an action configured to affect a file system or registry of the non-virtual system environment;
a virtualization manager:
detecting the attempt to perform said action;
accessing the process table;
comparing a process ID of the given process to process IDs in the process table;
permitting the given process to access the non-virtual system environment, in response to determining the process table indicates the process ID is not associated with the virtual environment; and
preventing the given process from accessing the non-virtual system environment, in response to determining the process table indicates the process ID is associated with the virtual environment.
9. The method of claim 8, wherein subsequent to installing the application in the virtual environment, the method further comprises unregistering the installer service from the virtual environment and registering the installer service in the non-virtual system environment.
10. The method of claim 9, further comprising receiving instructions from a streaming server that identify the virtual environment into which to install the install package.
11. The method of claim 9, further comprising:
receiving the install package as a series of streamlets;
the installer component extracting data from a received streamlet and issuing a write request to write the data into the virtual environment; and
a driver outside of the virtual environment detecting the write request.
12. The method of claim 11, further comprising in response to detecting the write request, the driver:
determining if the file is a sparse file; and
if the file is a sparse file:
registering the file as a sparse file; and
allocating an amount of storage space for the sparse file that is sufficient to store a non-sparse file that corresponds to the sparse file.
13. The method of claim 12, wherein the sparse file includes a marker identifying a location from which the non-sparse file data may be retrieved, wherein in response to detecting a read request to read the sparse file, the method further comprises retrieving the non-sparse file data from said location.
14. The method of claim 11, wherein the installer component includes an installer service and an installer executable process.
15. A computer readable storage medium storing first program instructions executable by a client computing system to:
start an installer component in a suspended state in a non-virtual system environment of the client, said non-virtual system environment being an environment within which processes may execute;
register the installer component in a virtual environment of the client, the virtual environment being an environment within which processes may execute; and
maintain a process table which identifies processes configured to run in the virtual environment;
resume execution of the installer component in the virtual environment;
wherein subsequent to resuming execution, the installer component on the client comprises program instructions executable to:
begin installation of the application in the virtual environment; and
initiate an attempt to perform an action configured to affect a file system or registry of the non-virtual system environment;
wherein a virtualization manager on the client comprises program instructions executable to:
detect the attempt to perform said action;
access the process table;
compare a process ID of the given process to process IDs in the process table;
permit the given process to access the non-virtual system environment, in response to determining the process table indicates the process ID is not associated with the virtual environment; and
prevent the given process from accessing the non-virtual system environment, in response to determining the process table indicates the process ID is associated with the virtual environment.
16. The computer readable storage medium of claim 15, wherein subsequent to installing the application in the virtual environment, the first program instructions are configured to unregister the installer service from the virtual environment and register the installer service in the non-virtual system environment.
17. The computer readable storage medium of claim 15, wherein first program instructions are further executable by a client computing system to:
receiving the install package from a streaming server as a series of streamlets; and
receiving instructions from the streaming server computing system that identify a virtual environment into which to install the install package.
18. The computer readable storage medium of claim 16,
wherein the installer component is configured to extract data from a streamlet and issue a write request to write the data into the virtual environment; and
a driver outside of the virtual environment is configured to detect the write request.
19. The computer readable storage medium of claim 18, wherein in response to detecting the write request, the driver is further configured to:
determine if the file is a sparse file; and
if the file is a sparse file:
register the file as a sparse file; and
allocate an amount of storage space for the sparse file that is sufficient to store a non-sparse file that corresponds to the sparse file.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for uplink signaling between a base station and an access terminal of a plurality of access terminals, the method comprising:
by the base station:
assigning resources for a resource request to the access terminal, the assigned resources comprising periodic time-frequency resources of an orthogonal frequency division multiplexing (OFDM) based signaling scheme; and
receiving the resource request combined with acknowledge (ACK) andor negative acknowledge (NACK) feedback from the access terminal,
wherein the resource request is spread over a plurality of subcarriers in one or more OFDM symbols of the assigned resources using at least one orthogonal spreading sequence.
2. The method of claim 1, wherein the periodic time-frequency resources comprise localized or distributed time-frequency resources in a plurality of OFDM symbols and a plurality of sub carriers.
3. The method of claim 1, wherein the resource request comprises an indicator or a flag.
4. The method of claim 3, wherein the resource request comprises a request for uplink resources for the access terminal.
5. The method of claim 1, further comprising the base station identifying the access terminal from which the resource request is transmitted based at least in part on the resources on which the resource request is received.
6. The method of claim 1, wherein the resources for the resource request assigned to the access terminal comprise resources overlaid on time-frequency resources used for uplink control signaling.
7. The method of claim 1, wherein the resources for the resource request assigned to the access terminal comprise time-frequency resources assigned at least in part to a second access terminal of the plurality of access terminals, the second access terminal using at least one orthogonal spreading sequence that differs from the at least one orthogonal spreading sequence used by the access terminal.
8. A base station configured to receive uplink signaling from an access terminal of a plurality of access terminals, the base station comprising:
wireless circuitry for performing wireless communication with the plurality of access terminals;
processing circuitry in communication with the wireless circuitry, wherein the processing circuitry is configured to cause the base station to:
assign resources for a resource request to the access terminal, the assigned resources comprising periodic time-frequency resources of an orthogonal frequency division multiplexing (OFDM) based signaling scheme; and
receive the resource request combined with acknowledge (ACK) andor negative acknowledge (NACK) feedback from the access terminal,
wherein the resource request is spread over a plurality of subcarriers in one or more OFDM symbols of the assigned resources using at least one orthogonal spreading sequence.
9. The base station of claim 8, wherein the periodic time-frequency resources comprise localized or distributed time-frequency resources in a plurality of OFDM symbols and a plurality of subcarriers.
10. The base station of claim 8, wherein the resource request comprises an indicator or a flag.
11. The base station of claim 10, wherein the resource request comprises a request for uplink resources for the access terminal.
12. The base station of claim 8, wherein the processing circuitry is further configured to cause the base station to identify the access terminal from which the resource request is transmitted based at least in part on the resources on which the resource request is received.
13. The base station of claim 8, wherein the resources for the resource request assigned to the access terminal comprise resources overlaid on time-frequency resources used for uplink control signaling.
14. The base station of claim 8, wherein the resources for the resource request assigned to the access terminal comprise time-frequency resources assigned at least in part to a second access terminal of the plurality of access terminals, the second access terminal using at least one orthogonal spreading sequence that differs from the at least one orthogonal spreading sequence used by the access terminal.
15. A non-transitory computer-readable medium storing instructions that, when executed by processing circuitry of a base station, case the base station to:
assign resources for a resource request to the access terminal, the assigned resources comprising periodic time-frequency resources of an orthogonal frequency division multiplexing (OFDM) based signaling scheme; and
receive the resource request combined with acknowledge (ACK) andor negative acknowledge (NACK) feedback from the access terminal,
wherein the resource request is spread over a plurality of subcarriers in one or more OFDM symbols of the assigned resources using at least one orthogonal spreading sequence.
16. The non-transitory computer-readable medium of claim 15, wherein the periodic time-frequency resources comprise localized or distributed time-frequency resources in a plurality of OFDM symbols and a plurality of subcarriers.
17. The non-transitory computer-readable medium of claim 15, wherein the resource request comprises an indicator or a flag that indicates a request for uplink resources for the access terminal.
18. The non-transitory computer-readable medium of claim 15, wherein execution of the instructions by processing circuitry further cause the base station to identify the access terminal from which the resource request is transmitted based at least in part on the resources on which the resource request is received.
19. The non-transitory computer-readable medium of claim 15, wherein the resources for the resource request assigned to the access terminal comprise resources overlaid on time-frequency resources used for uplink control signaling.
20. The non-transitory computer-readable medium of claim 15, wherein the resources for the resource request assigned to the access terminal comprise time-frequency resources assigned at least in part to a second access terminal of the plurality of access terminals, the second access terminal using at least one orthogonal spreading sequence that differs from the at least one orthogonal spreading sequence used by the access terminal.