1. A method for manufacturing a flexural plate wave sensor comprising the steps of:
depositing an etch-stop layer over a substrate;
depositing a membrane layer over said etch stop layer;
depositing a piezoelectric layer over said membrane layer;
forming a transducer on said piezoelectric layer;
etching a cavity through the substrate, the cavity having substantially parallel interior walls; and
removing the portion of the etch stop layer between the cavity and the membrane layer to expose a portion of the membrane layer.
2. The method of claim 1 further comprising the steps of etching a hole in the piezoelectric and forming a ground contact on the membrane layer.
3. A flexural plate wave sensor comprising:
a base substrate;
an etch stop layer disposed over said base substrate;
a membrane layer disposed over said etch stop layer;
a cavity disposed in said base substrate and said etch stop layer, thereby exposing a portion of said membrane layer, said cavity having substantially parallel interior walls;
a piezoelectric layer disposed over said membrane layer; and
a transducer disposed on said piezoelectric layer.
4. The flexural plate wave sensor of claim 3 wherein said transducer is an interdigitated transducer.
5. The flexural plate wave sensor of claim 3 wherein said transducer is formed from TiPtAu.
6. The flexural plate wave sensor of claim 3 wherein said transducer is formed from aluminum.
7. The flexural plate wave sensor of claim 3 wherein said piezoelectric layer is formed from a material selected from the group consisting of: aluminum nitride, zinc oxide and lead zirconium titanate.
8. The flexural plate wave sensor of claim 3 wherein said etch stop layer is formed from silicon dioxide.
9. The flexural plate wave sensor of claim 3 wherein said membrane layer is formed from silicon.
10. The flexural plate wave sensor of claim 3 wherein said base substrate is formed from silicon.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An Ni-base intermetallic compound alloy, which comprises a dual multi-phase microstructure comprising a primary precipitate L12 phase and an (L12+D022) eutectoid microstructure, and which comprises:
more than 5 atomic % and up to 13 atomic % of Al;
at least 9.5 atomic % and less than 17.5 atomic % of V;
from 3.1 atomic % to 5.3 atomic % of Nb;
from 0.2 atomic % to 2.4 atomic % of C; and
a remainder comprising Ni.
2. The Ni-base intermetallic compound alloy according to claim 1, formed by adding NbC to Al, V and Ni as the alloy materials.
3. The Ni-base intermetallic compound alloy according to claim 2, further comprising a different microstructure from the dual multi-phase microstructure, the different microstructure containing NbC.
4. The Ni-base intermetallic compound alloy according to claim 1, wherein Nb and C are contained as NbC.
5. The Ni-base intermetallic compound alloy according to claim 1, further comprising more than 0 ppm by weight and up to 1000 ppm by weight of B.
6. The Ni-base intermetallic compound alloy according to claim 5, wherein the B content is from 50 ppm by weight to 1000 ppm by weight.
7. The Ni-base intermetallic compound alloy according to claim 1, wherein the Al content is from 6 atomic % to 10 atomic %, and the V content is at least 12.0 atomic % and less than 16.5 atomic %.
8. A method for manufacturing an Ni-base intermetallic compound alloy, comprising the steps of:
preparing an ingot from a molten metal containing more than 5 atomic % and up to 13 atomic % of Al, at least 9.5 atomic % and less than 17.5 atomic % of V, more than 0 atomic % and up to 12.5 atomic % of Nb, more than 0 atomic % and up to 12.5 atomic % of C, and a remainder comprising Ni;
giving a first heat treatment to the ingot at a temperature at which a primary precipitate L12 phase and an A1 phase coexist; and
decomposing the A1 phase into an L12 phase and a D022 phase by cooling after the first heat treatment.
9. The method for manufacturing an Ni-base intermetallic compound alloy according to claim 8, further comprising homogenization heat treatment or solution heat treatment.
10. The method for manufacturing an Ni-base intermetallic compound alloy according to claim 9, wherein the homogenization heat treatment or the solution heat treatment is performed at a temperature from 1503 K to 1603 K.
11. A method for manufacturing an Ni-base intermetallic compound alloy, comprising the steps of:
forming a microstructure in which a primary precipitate L12 phase and an A1 phase coexist by slow cooling a molten metal containing alloy materials including Ni as a main component, more than 5 atomic % and up to 13 atomic % of Al, at least 9.5 atomic % and less than 17.5 atomic % of V, and more than 0 atomic % and up to 12.5 atomic % of NbC; and
decomposing the A1 phase into an L12 phase and a D022 phase by cooling the microstructure in which the primary precipitate L12 phase and the A1 phase coexist.
12. The method for manufacturing an Ni-base intermetallic compound alloy according to claim 11, wherein the NbC content is more than 0 atomic % and up to 4.6 atomic %.
13. An Ni-base intermetallic compound alloy obtainable by the manufacturing method according to claim 11, the alloy comprising a dual multi-phase microstructure and a microstructure containing NbC.
14. A method for manufacturing an Ni-base intermetallic compound alloy, comprising the steps of:
preparing an ingot from a molten metal containing alloy materials including Ni as a main component, more than 5 atomic % and up to 13 atomic % of Al, at least 9.5 atomic % and less than 17.5 atomic % of V, and more than 0 atomic % and up to 12.5 atomic % of NbC;
giving a first heat treatment to the ingot at a temperature at which a primary precipitate L12 phase and an A1 phase coexist; and
decomposing the A1 phase into an L12 phase and a D022 phase by cooling after the first heat treatment.