1. A transistor comprising:
a source positioned within an active region;
a drain positioned within the active region;
a gate overlying a channel area of the active region, the channel region separating the source and drain; and
at least one stress modifier and capacitive reduction feature disposed within the active region, extending from the source to the drain, and underlying the gate for reducing capacitance associated with the gate, source and drain, wherein the at least one stress modifier and capacitive reduction feature comprises dielectric having a shape that is disposed within and defined at least partially by a portion of the active region corresponding to a previously removed portion of the active region.
2. The transistor of claim 1 wherein the at least one stress modifier and capacitive reduction feature further comprises a notch positioned around at least one side of the active area in close proximity to the gate.
3. The transistor of claim 2 wherein the notch is positioned on two opposing sides of the active area and substantially symmetric to the gate.
4. The transistor of claim 1 wherein the at least one stress modifier and capacitive reduction feature modifies stress in a width direction of the channel area.
5. The transistor of claim 1 wherein the width direction of the channel area is a <100> crystal orientation.
6. The transistor of claim 5 wherein the dielectric is one that exerts a compressive stress on the active region.
7. The transistor of claim 6 wherein the dielectric that exerts a compressive stress on the active region is an oxide.
8. The transistor of claim 1 wherein the width direction of the channel area is a <110> crystal orientation.
9. The transistor of claim 8 wherein the dielectric is one that exerts a tensile stress on the active region.
10. The transistor of claim 9 wherein the dielectric that exerts a tensile stress on the active region is silicon nitride.
11. The transistor of claim 1 wherein a total number of the at least one stress modifier and capacitive reduction feature is dependent on an overall width of the active region.
12. The transistor of claim 1 wherein the total number of the at least one stress modifier and capacitive reduction feature is further dependent on an optimum sub-width of the active region.
13. The transistor of claim 12 wherein the optimum sub-width is determined by a calculation of optimum performance metrics.
14. The transistor of claim 1 wherein the active region further comprises at least two stress modifying liners, a first liner surrounding at least a portion of a periphery of the active region and a second liner surrounding at least a portion of a surface of the at least one stress modifier and capacitive reduction feature.
15. The transistor of claim 14 wherein the second liner is substantially thicker in cross-sectional width than the first liner for exerting a substantially greater stress than the first liner.
16. The transistor of claim 14 wherein the first liner and the second liner further comprise an oxide.
17. The transistor of claim 1 further comprises at least two predetermined transistor building blocks, each of the at least two predetermined transistor building blocks having a sub-width and a side perimeter, wherein when any two of the at least two predetermined transistor building blocks are physically joined, the side perimeter thereof forms the at least one stress modifier and capacitive reduction feature.
18. The transistor of claim 17 wherein the active region further comprises at least two stress modifying liners, a first liner surrounding at least a portion of a periphery of the active region and a second liner surrounding at least a portion of a surface of the at least one stress modifier and capacitive reduction feature.
19. The transistor of claim 17 wherein the width direction of the channel area is a <100> crystal orientation.
20. The transistor of claim 19 wherein the dielectric is one that exerts a compressive stress on the active region.
21. The transistor of claim 20 wherein the dielectric that exerts a compressive stress on the active region is an oxide.
22. The transistor of claim 17 wherein the width direction of the channel area is a <110> crystal orientation.
23. The transistor of claim 22 wherein the dielectric is one that exerts a tensile stress on the active region.
24. The transistor of claim 23 wherein the dielectric that exerts a tensile stress on the active region is silicon nitride.
25. The transistor of claim 17 wherein the side perimeter of at least one of the two predetermined transistor building blocks further comprises a notch that determine in part the sub-width.
26. The transistor of claim 1 further comprising a plurality of transistors, each of the plurality of transistors having a structure of the transistor of claim 1, the structure of the transistor of claim 1 being implemented in at least a majority of transistors of a predetermined conductivity type used to implement a non-memory function in an integrated circuit die.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A tunable Fabry-Perot optical filter for providing a spatially accurate wavelength-resolved image of a sample having two spatial dimensions comprising:
plural filter elements having an initial predetermined spacing between adjacent filter elements; and
a micro electro-mechanical system (\u201cMEMS\u201d) actuator,
wherein one of said plural filter elements is attached to said MEMS actuator so that said MEMS actuator is capable of moving said one filter element relative to another of said plural filter elements to thereby tune said Fabry-Perot optical filter to produce said image.
2. The filter of claim 1 wherein the initial predetermined spacing is uniform between each set of adjacent filter elements.
3. The filter of claim 1 wherein said filter elements are comprised of silicon.
4. The filter of claim 1 wherein said filter elements are initially positioned substantially parallel to each other.
5. The filter of claim 1 wherein said MEMS actuator is a substrate to which one of said plural filter elements is attached.
6. The filter of claim 5 wherein said one filter element comprises plural sub-elements and said substrate comprises plural MEMS sub-actuators so that a one of said sub-elements is attached to a one of said sub-actuators so that said one sub-actuator is capable of moving said one sub-element relative to another of said sub-elements.
7. The filter of claim 1 further comprising a power source for driving said MEMS actuator.
8. A method for tuning a Fabry-Perot optical filter for providing a spatially accurate wavelength-resolved image of a sample having two spatial dimensions, the method comprising the steps of:
providing a Fabry-Perot filter having plural filter elements having an initial predetermined spacing between adjacent filter elements;
attaching one of said plural filter elements to a micro electro-mechanical system (\u201cMEMS\u201d) actuator; and
providing power to the MEMS actuator to thereby move said one filter element relative to another of said plural filter elements to thereby tune the Fabry-Perot optical filter for providing said spatially accurate wavelength-resolved image of said sample having two spatial dimensions.
9. The method of claim 8 wherein the MEMS actuator is a substrate to which one of the plural filter elements is attached.
10. The method of claim 9 wherein the one filter element comprises plural sub-elements and the substrate comprises plural MEMS sub-actuators so that a one of the sub-elements is attached to a one of the sub-actuators so that the step of providing power includes providing power to the one sub-actuator so as to move the one sub-element relative to another of the sub-elements.
11. A system for obtaining a spatially accurate wavelength resolved image of a sample, comprising:
a photon emission source for illuminating the sample with a plurality of photons to thereby produce photons scattered by the sample;
an optical lens for collecting the scattered photons;
a first lens for directing said scattered photons;
a tunable Fabry-Perot filter for receiving the collected scattered photons and providing therefrom filtered photons; and
a second lens for directing said filtered photons;
a photon detector for receiving the filtered photons and obtaining therefrom an image of the sample,
wherein said filter comprises:
plural filter elements having an initial predetermined spacing between adjacent filter elements; and
a micro electro-mechanical system (\u201cMEMS\u201d) actuator,
wherein one of said plural filter elements is attached to said MEMS actuator so that said MEMS actuator is capable of moving said one filter element relative to another of said plural filter elements to thereby tune said Fabry-Perot optical filter.
12. The system of claim 11 wherein said photon detector is selected from the group consisting of: charge-coupled device, complementary metal oxide semiconductor, charge injection device, intensified charge injection device, electron multiplying charge-coupled device, silicon photo diode, silicon avalanche diode, and focal plane array.
13. The system of claim 11 wherein said photon emission source is a laser.
14. The system of claim 11 wherein said photon emission source is a light emitting diode.
15. The system of claim 14 wherein said light emitting diode is disposed as a ring.
16. The system of claim 15 wherein said light emitting diode is a plurality of light emitting diodes.
17. The system of claim 14 wherein said light emitting diode is a plurality of light emitting diodes wherein one of said plural light emitting diodes emits photons at a wavelength that is different than a wavelength of photons emitted by another of said plural light emitting diodes.
18. The system of claim 17 wherein the wavelength of photons emitted by one of said plural light emitting diodes is in the ultraviolet wavelength range.
19. The system of claim 17 wherein the wavelength of photons emitted by one of said plural light emitting diodes is in the near infrared wavelength range.
20. The system of claim 11 wherein said image is obtained over a predetermined period of time and said sample is stationary during said predetermined period of time.
21. The system of claim 11 wherein said scattered photons include photons emitted by said sample.
22. The system of claim 11 wherein said image spectrum is a Raman image.
23. The system of claim 11 wherein the system is portable.
24. The system of claim 11 wherein the system is hand held.
25. The system of claim 11 wherein said scattered photons include photons emitted by said sample.
26. The system of claim 11 wherein said filtered photons each have a wavelength within a predetermined wavelength band.
27. The system of claim 11 wherein said filter includes a polarizer.
28. The system of claim 11 wherein the initial predetermined spacing is uniform between each set of adjacent filter elements.
29. The system of claim 11 wherein said filter elements are comprised of silicon.
30. The system of claim 11 wherein said filter elements are initially positioned substantially parallel to each other.
31. The system of claim 11 wherein said MEMS actuator is a substrate to which one of said plural filter elements is attached.
32. The system of claim 31 wherein said one filter element comprises plural sub-elements and said substrate comprises plural MEMS sub-actuators so that a one of said sub-elements is attached to a one of said sub-actuators so that said one sub-actuator is capable of moving said one sub-element relative to another of said sub-elements.
33. The system of claim 11 further comprising a power source for driving said MEMS actuator.
34. A method for obtaining a spatially accurate wavelength-resolved image of a sample, comprising:
providing a sample;
illuminating the sample with a plurality of photons to thereby produce photons scattered by the sample;
collecting the scattered photons;
providing a tunable Fabry-Perot filter;
receiving the collected scattered photons with the tunable Fabry-Perot filter and providing therefrom filtered photons; and
receiving the filtered photons with a photon detector and obtaining therefrom said spatially accurate wavelength-resolved image of the sample.
35. The method of claim 34 wherein the step of providing the filter includes:
providing a Fabry-Perot filter having plural filter elements having an initial predetermined spacing between adjacent filter elements;
attaching one of said plural filter elements to a micro electro-mechanical system (\u201cMEMS\u201d) actuator; and
providing power to the MEMS actuator to thereby move said one filter element relative to another of said plural filter elements to thereby tune the Fabry-Perot optical filter.
36. The method of claim 35 wherein the MEMS actuator is a substrate to which one of the plural filter elements is attached.
37. The method of claim 36 wherein the one filter element comprises plural sub-elements and the substrate comprises plural MEMS sub-actuators so that a one of the sub-elements is attached to a one of the sub-actuators so that the step of providing power includes providing power to the one sub-actuator so as to move the one sub-element relative to another of the sub-elements.