Author: claimsbot

1. A self-rescue method for a damaged file system, comprising:
sending a fault warning message to a background server when it is found during boot of a device that a file system is damaged;
receiving, by the device, an acknowledgement message from the background server, wherein the acknowledgement message contains a path and file name of a backup version selected by the background server according to a product type; and
downloading, by the device, a version file, and rebooting from the version file.
2. The method according to claim 1, further comprising: backing up an address capable of ensuring communications between a foreground server and the background server to a private data area of a non-file system, when the device is powered on for the first time.
3. The method according to claim 2, further comprising: acquiring the address needed for the communications with the background server from the private data area of the non-file system, before the fault warning message is sent to the background server.
4. The method according to claim 2, further comprising: entering, by BOOT, an exception handling branch and recording an exception branch identifier, before the fault warning message is sent to the background server when it is found during boot of the device that the file system is damaged.
5. The method according to claim 4, further comprising: determining, by the device, whether the exception branch identifier recorded by BOOT is valid after the device reboots from the version file, in the case that the identifier is valid, reading the backup address to restore register.
6. The method according to claim 1, wherein the version file is downloaded via File Transfer Protocol (FTP) or Hyper Text Transfer Protocol (HTTP); and
the device sends the fault warning message to the background server via User Datagram Protocol (UDP) or Simple Network Management Protocol (SNMP).
7. A self-rescue device for a damaged file system, comprising a sending and receiving module, a downloading module and a boot module, wherein
the sending and receiving module is configured to send a fault warning message to a background server when it is found during boot of a device that a file system is damaged, and to receive an acknowledgment message from the background server, wherein the acknowledgment message contains a path and file name of a backup version selected by the background server according to a product type;
the downloading module is connected with the sending and receiving module and is configured to download a version file from the background server; and
the boot module is connected with the downloading module and is configured to reboot from the version file after the downloading is completed.
8. The device according to claim 7, wherein the sending and receiving module is further configured to back up an address capable of ensuring communications between a foreground server and the background server to a private data area of a non-file system, and to acquire the address needed for the communications with the background server from the private area of the non-file system.
9. The device according to claim 7, further comprising a control module, which is configured to control the device to enter an exception handling branch and record an exception branch identifier when it is found during boot of the device that the file system is damaged.
10. The device according to claim 9, wherein the control module is further configured to, after the device reboots from the version file, determine whether the recorded exception branch identifier is valid, and read the backup address to restore register in the case that the identifier is valid.
11. The device according to claim 7, wherein the downloading module is configured to download the version file from the background server via FTP or HTTP; and
the sending and receiving module is configured to send the fault warning message to the background server via UDP or SNMP.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A device comprising:
a first transducer in a first speaker to receive a first signal;
a second transducer in a second speaker to receive a second signal, the second transducer being different in size than the first transducer; and
a filter to filter at least a frequency portion included in the first signal such that the first signal is provided to the first transducer after the frequency portion is filtered; and
wherein a third signal corresponding to the frequency portion filtered from the first signal is provided together with the second signal to the second transducer.
2. The device of claim 1, wherein the filter comprises a high pass filter configured to filter lower frequency ranges.
3. The device of claim 2, wherein the high pass filter is configured remove frequencies of approximately 60 to 200 Hz.
4. The device of claim 1, wherein the second speaker is mounted above the first speaker.
5. The device of claim 1, wherein the first and second speakers are arranged within a cylindrical housing and coaxially aligned about a center axis of the cylindrical housing.
6. The device of claim 1, wherein the first and second speakers are arranged horizontally in a spaced relationship.
7. A method comprising:
receiving a first signal and a second signal to be used to produce stereo sound;
filtering the first signal to filter at least a portion of frequencies;
providing the first signal to a first transducer in a first speaker after the first signal is filtered; and
providing the second signal, together with a third signal corresponding to the portion of frequencies filtered from the first signal, to a second transducer in a second speaker.
8. The method of claim 7, wherein the second signal is provided to the second transducer without filtering.
9. The method of claim 7, wherein filtering comprises applying a high pass filter to the first signal.
10. The method of claim 7, wherein filtering comprises filtering a frequency range of approximately 60 to 200 Hz.
11. A device comprising:
a processor mounted within the housing to process a first signal and second signal representation of an audio output;
a first speaker having a first transducer;
a filter to filter to pass a first frequency portion of the first signal to the first transducer of the first speaker and to filter a second frequency portion of the first signal; and
a second speaker having a second transducer to receive the second signal and the filtered frequency portion of the first signal, the second transducer being different in size than the first transducer.
12. The device of claim 11, wherein the second transducer is larger than the first transducer.
13. The device of claim 11, further comprising a housing and wherein the first and second speakers are arranged within a housing such that the second speaker is mounted above the first speaker.
14. The device of claim 11, further comprising a housing and wherein the first and second speakers are coaxially aligned within the housing.
15. The device of claim 11, further comprising a housing and wherein the first and second speakers are arranged horizontally within the housing in a spaced relationship.
16. The device of claim 11, wherein the filter comprises a high pass filter.
17. The device of claim 16, wherein the high pass filter is configured to filter frequencies of approximately 60 to 200 Hz.
18. The device of claim 11, wherein the high pass filter is configured to pass frequencies of approximately 200 to 1500 Hz.
19. The device of claim 11, wherein the first signal is a right channel signal and the second signal is a left channel signal.
20. The method of claim 7, wherein the portion of frequencies filtered from the first signal are approximately 200 to 1500 Hz.

1. A device, comprising:
a print head;
a manifold;
at least one feed through tube located on a side of the manifold opposite the print head; and
a first gas source located between the manifold and the print head and hermetically sealed to the print head,
the print head further comprising:
a first layer further comprising a plurality of nozzles, each nozzle having an aperture, and each aperture having a smallest dimension of 0.5 to 500 microns; and
a second layer bonded to the first layer, the second layer further comprising a first via in fluid communication with the first gas source and at least one of the nozzles, wherein the second layer is made of an insulating material, and

wherein at least one of the first layer and the second layer is configured to be heated by a heat source associated with the print head,
wherein the heat source is incorporated into the at least first layer or the second layer of the print head, and
wherein the heat source is a resistive element embedded in the at least first layer or the second layer of the print head.
2. The device of claim 1, wherein the first layer further comprises a channel that provides fluid communication within the first layer between the first via of the second layer and apertures of the first layer.
3. The device of claim 1, further comprising a third layer disposed between the first and second layers and bonded to the first layer and the second layer, wherein the third layer further comprises a channel that provides fluid communication between the first via of the second layer and apertures of the first layer.
4. The device of claim 3, wherein the third layer further comprises a heat source.
5. The device of claim 1, wherein a plurality of the nozzles are in parallel fluid communication with the first gas source.
6. The device of claim 1, wherein the print head further comprises a microelectromechanical switch adapted to block or allow fluid communication between the first via and the at least one of the apertures depending upon the state of the switch.
7. The device of claim 1, wherein at least one aperture is formed in a protrusion from the print head.
8. The device of claim 1, wherein the thickness of the print head is between 50 and 500 microns.
9. The device of claim 1, wherein the second layer further comprises a channel that provides fluid communication within the second layer between the first via of the second layer and nozzles of the first layer.
10. The device of claim 1, wherein the first layer is configured to be heated.
11. The device of claim 10, wherein the first layer includes a heat source.
12. The device of claim 1, wherein the second layer is configured to be heated.
13. The device of claim 12, wherein the second layer includes a heat source.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate having a central portion with a first thickness and a peripheral portion with a second thickness that is smaller than said first thickness;
an electrode pad formed on said semiconductor substrate;
a sealing resin for sealing said semiconductor substrate;
a protruded electrode formed on said sealing resin; and
a wire which electrically connects said electrode pad to said protruded electrode.
2. A semiconductor device as claimed in claim 1, wherein said first thickness is less than said second thickness by more than 10 m.
3. A semiconductor device, comprising:
a semiconductor substrate having a central portion and a peripheral portion that is formed with a step of prescribed height that is measured with respect to a surface of said central portion;
an electrode pad formed on said central portion of said semiconductor substrate;
a protruded electrode that is electrically connected to said electrode pad via a wire; and
a sealing resin for sealing said central portion, said peripheral portion, and said wire of said semiconductor substrate.
4. A semiconductor device as claimed in claim 3, wherein said peripheral portion of said semiconductor substrate has a width that is equal to a distance from an edge portion of said semiconductor device to said central portion, and wherein a width of said peripheral portion is varied between a first value and a second value.
5. A semiconductor device as claimed in claim 3, wherein said peripheral portion of said semiconductor substrate has a width that is equal to a distance from an edge portion of said semiconductor device to said central portion, and said width of said peripheral portion is over 3 m.
6. A semiconductor device as claimed in claim 3, wherein said prescribed height of said step is over 10 m.
7. A semiconductor device manufacturing method comprising the steps of:
forming an electrode pad on a semiconductor wafer;
forming a wire to be connected to said electrode pad;
forming on a prescribed region of said semiconductor wafer a groove having a first width that is varied between a first value as a lower limit and a second value as an upper limit;
sealing with a resin said semiconductor wafer and said wire;
forming on said resin a protruded electrode that is electrically connected to said wire; and
dividing said semiconductor wafer into a plurality of semiconductor devices by cutting said prescribed region using a blade having a thickness that is smaller than said first width.
8. A semiconductor device manufacturing method as claimed in claim 7, wherein a depth of said groove having said first width is over 10 m.
9. A semiconductor device manufacturing method as claimed in claim 7, wherein a difference between said first width and said second width is over 6 m.
10. A semiconductor device manufacturing method comprising the steps of:
forming an electrode pad on a semiconductor wafer;
forming a wire to be connected to said electrode pad;
forming on a prescribed region of said semiconductor wafer a groove having a first width that varies between a first value as a lower limit and a second value as an upper limit;
sealing with a resin said semiconductor wafer and said wire;
forming on said resin a protruded electrode that is electrically connected to said wire; and
dividing said semiconductor wafer into a plurality of semiconductor devices by cutting said prescribed region using a blade having a third thickness that is smaller than said second value.
11. A semiconductor device manufacturing method as claimed in claim 10, wherein a depth of said groove is over 10 m.
12. A semiconductor device manufacturing method as claimed in claim 10, wherein a difference between said second value and said third width is over 6 m.