Author: claimsbot

1. A scroll compressor comprising:
a compressor mechanism including a first scroll having an end plate and a spiral wrap formed thereon and a second scroll having an end plate and a spiral wrap formed thereon and engaging with the first scroll;
a support for supporting the second scroll;
a seal arranged between the support and the second scroll; and
a position adjustment device for changing a position of the second scroll along an axial direction of the compressor mechanism,
the seal hermetically contacting the end plate of the second scroll such that a back pressure space for bringing the first scroll and the second scroll into contact with each other is defined inside the seal with the first and second scrolls being engaged, and
the position adjustment is device being configured to change a position of the seal between a sealing position at which the seal hermetically contacts the end plate of the second scroll and a leakage position at which the seal is separated from the end plate of the second scroll.
2. A scroll compressor comprising:
a compressor mechanism including a first scroll having an end plate and a spiral wrap formed thereon and a second scroll having an end plate and a spiral wrap formed thereon for engaging with the first scroll;
a support for supporting the first scroll;
a seal arranged between the support and the first scroll; and
a position adjustment device for changing a position of the first scroll along an axial direction of the compressor mechanism,
the seal hermetically contacting the end plate of the first scroll such that a back pressure space for bringing the first scroll and the second scroll into contact with each other is defined inside the seal with the first and second scrolls being engaged, and
the position adjustment device being configured to change a position of the seal between a sealing position at which the seal hermetically contacts the end plate of the first scroll and a leakage position at which the seal is separated from the end plate of the first scroll.
3. The scroll compressor of claim 1, wherein
the first scroll is a stationary scroll prohibited from revolving, and
the second scroll is a moving scroll capable of moving with respect to the first scroll.
4. The scroll compressor of claim 1, wherein
the end plate of the first scroll or the second scroll is provided with a back pressure introduction path for making the back pressure space communicate with a portion of a compressor chamber defined between the first scroll and the second scroll, the portion being more inside than a periphery of the compressor chamber.
5. The scroll compressor of claim 1, wherein
the support includes a support recess for supporting the seal such that the seal moves toward or away from the support, and
the position adjustment device includes a high pressure communication path for making a rear end part of the support recess communicate with a high pressure region, a low pressure communication path for making the rear end part of the support recess communicate with a low pressure region and a switching mechanism for switching the communication between the support recess and the low pressure communication path.
6. The scroll compressor of claim 5, wherein
the high pressure communication path has a restrictor, and
the low pressure communication path has an on-off valve as the switching mechanism.
7. The scroll compressor of claim 2, wherein
the first scroll is a stationary scroll prohibited from revolving, and
the second scroll is a moving scroll capable of moving with respect to the first scroll.
8. The scroll compressor of claim 2, wherein
the end plate of the first scroll or the second scroll is provided with a back pressure introduction path for making the back pressure space communicate with a portion of a compressor chamber defined between the first scroll and the second scroll, the portion being more inside than a periphery of the compressor chamber.
9. The scroll compressor of claim 2, wherein
the support includes a support recess for supporting the seal such that the seal moves toward or away from the support, and
the position adjustment device includes a high pressure communication path for making a rear end part of the support recess communicate with a high pressure region, a low pressure communication path for making the rear end part of the support recess communicate with a low pressure region and a switching mechanism for switching the communication between the support recess and the low pressure communication path.
10. The scroll compressor of claim 9, wherein
the high pressure communication path has a restrictor, and
the low pressure communication path has an on-off valve as the switching mechanism.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A device comprising:
a groove formed in a semiconductor substrate;
a gate dielectric film formed over and contacting a bottom surface of the groove;
a gate electrode formed in the groove over the gate dielectric film;
sourcedrain regions disposed adjacent the sides of the gate electrode; and
spacers interposed between the gate electrode and the sourcedrain regions,
wherein the uppermost surface of the sourcedrain regions, the uppermost surface of the gate electrode and the uppermost surface of the spacers are formed on the same plane.
2. The device of claim 1, further comprising LDD regions formed under and contacting the sourcedrain regions and contacting the sidewall of the spacers and a bottom surface of the spacers.
3. The device of claim 1, wherein the gate electrode is composed of a poly silicon layer.
4. The device of claim 1, wherein the gate electrode is composed of a metal layer.
5. The device of claim 1, wherein a depth of the spacer is the same as a depth of the sourcedrain region.
6. A device comprising:
a first groove formed in a semiconductor substrate;
a gate dielectric film formed over and contacting a the sidewalls and the bottom surface of the first groove;
a gate electrode formed in the first groove over the gate dielectric film, the gate electrode including an upper gate electrode portion projecting from the first groove and a lower gate electrode portion formed in the first groove;
second grooves formed in the semiconductor substrate;
spacers formed in a respective one of the second grooves and contacting sidewalls of the gate dielectric film;
sourcedrain regions formed in the semiconductor substrate and contacting a sidewall of the spacers.
7. The device of claim 6, wherein the second grooves are formed at the same depth as the first groove.
8. The device of claim 6, wherein the width of the upper gate electrode portion is greater than the width of the lower gate electrode portion.
9. The device of claim 6, wherein a depth of the spacer is the same as a depth of the sourcedrain regions.
10. The device of claim 6, wherein the gate electrode is composed of a poly silicon layer.
11. The device of claim 6, wherein the gate electrode is composed of a metal layer.
12. The device of claim 6, further comprising LDD regions formed under and contacting the bottom surface of sourcedrain regions and the spacers, respectively.
13. The device of claim 12, wherein the depth of the LDD regions is greater than the depth of the sourcedrain regions and the spacers.
14. A method comprising:
forming a groove in a semiconductor device; and then
forming spacers in the groove; and then
forming a gate dielectric film over a bottom surface of the groove; and then
forming a gate electrode in the groove between the spacers and over the gate dielectric film; and then
forming LDD regions in the semiconductor device contacting sidewalls and a bottom surface of the spacer; and then
forming sourcedrain regions in the semiconductor device contacting sidewalls of the spacers and over the LDD regions.
15. The method of claim 14, wherein forming of the LDD regions comprises:
implanting impurities in a region of the semiconductor substrate; and then
performing an annealing process on the region of the semiconductor substrate where the impurities are implanted.
16. The method of claim 14, wherein forming the gate electrode comprises:
forming a gate electrode material over the semiconductor substrate and in the groove; and then
removing a portion of the gate electrode material formed over the semiconductor substrate.
17. The method of claim 14, wherein the gate electrode is composed of a poly silicon layer.
18. The method of claim 14, wherein the gate electrode is composed of a metal layer.
19. The method of claim 14, wherein a depth of the spacers is the same as a depth of the sourcedrain regions.
20. The method of claim 14, wherein the uppermost surface of the sourcedrain regions, the uppermost surface of the gate electrode and the uppermost surface of the spacers are formed on the same plane.

1. A circuit, comprising:
a circuit component for modulating a gain of a photomultiplier tube in association with one or more dynodes of the photomultiplier tube, utilizing a modulation signal;
a circuit component for generating a matched signal matched to the modulation signal; and
a circuit component for combining the matched signal with an anode signal at an anode of the photomultiplier tube to generate a combination signal with a photon pulse amplitude that is preserved;
wherein the modulating, the generating, and the combining are performed for photon-counting.
2. A method, comprising:
modulating a gain of a photomultiplier tube in association with one or more dynodes of the photomultiplier tube, utilizing a modulation signal;
generating a matched signal matched to the modulation signal; and
combining the matched signal with an anode signal at an anode of the photomultiplier tube to generate a combination signal with a photon pulse amplitude that is preserved;
wherein the modulating, the generating, and the combining are performed for photon-counting.
3. The method of claim 2, wherein the modulation signal is generated utilizing a cancellation circuit.
4. The method of claim 3, and further comprising a voltage divider circuit having a plurality of resistor stages, each resistor stage coupled to one of the dynodes of the photomultiplier tube.
5. The method of claim 3, wherein the cancellation circuit includes a first output coupled to a first of the dynodes and a second output connected to a second of the dynodes.
6. An apparatus, comprising:
a photomultiplier tube including a cathode, an anode, and one or more dynodes; and
a photon-counting circuit coupled to the photomultiplier tube, the circuit for generating a first modulation signal and a second modulation signal 180-degrees out-of-phase with the first modulation signal.
7. The apparatus of claim 6, wherein the circuit includes a cancellation circuit.
8. The apparatus of claim 7, and further comprising a voltage divider circuit having a plurality of resistor stages, each resistor stage coupled to one of the dynodes of the photomultiplier tube.
9. The apparatus of claim 7, wherein the cancellation circuit includes a first output coupled to a first of the dynodes and a second output connected to a second of the dynodes.
10. The apparatus of claim 6, wherein superimposition of a modulation signal upon an output signal of the photomultiplier tube is cancelled.
11. The apparatus of claim 6, wherein the first modulation signal and the second modulation signal are applied to adjacent dynodes of the photomultiplier tube.
12. The apparatus of claim 6, wherein a level of at least one of the first modulation signal and the second modulation signal is adjusted for minimizing a net AC modulation voltage at the anode of the photomultiplier tube.
13. A method, comprising:
providing a photomultiplier tube including a cathode, an anode, and one or more dynodes; and
generating a first modulation signal and a second modulation signal 180-degrees out-of-phase with the first modulation signal, for photon-counting.
14. An apparatus, comprising:
a photomultiplier tube including a cathode, an anode, and one or more dynodes including a first dynode with a first modulation signal applied thereto;
a photon-counting circuit coupled to the photomultiplier tube, the circuit for attenuating the first modulation signal, and subtracting the attenuated modulation signal from an anode signal at the anode of the photomultiplier tube;
wherein a path length of the attenuated modulation signal is matched.
15. The apparatus of claim 14, wherein the attenuated modulation signal is capacitively-coupled.
16. The apparatus of claim 14, wherein the circuit includes a cancellation circuit.
17. A method, comprising:
providing a photomultiplier tube including a cathode, an anode, and one or more dynodes including a first dynode with a first modulation signal applied thereto;
attenuating the first modulation signal; and
subtracting the attenuated modulation signal from as anode signal at the anode of the photomultiplier tube;
wherein the attenuating and the subtracting are performed for photon-counting, and a path length of the attenuated modulation signal is matched.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of preparing an optically active 2-alkylated cysteine represented by Structural Formula (I):
or a salt thereof;
wherein R1 is a substituted or unsubstituted alkyl group,
the method comprising:
(a) coupling a compound represented by Structural Formula (II):
\u2003or a salt thereof, with a substituted or unsubstituted aryl nitrile of the formula Ar\u2014CN, wherein Ar is a substituted or unsubstituted aryl group; thereby forming a substituted thiazoline carboxylic acid represented by Structural Formula (III):
(b) esterifying the substituted thiazoline carboxylic acid with R*\u2014OH, wherein R* is a substituted or unsubstituted alkyl group comprising one or more chiral carbon atoms; thereby forming a substituted thiazoline carboxylic acid ester represented by Structural Formula (IV):
(c) alkylating the substituted thiazoline carboxylic acid ester with one or more bases and R1X, wherein X is a leaving group and R1 is as defined above; thereby forming an alkylated substituted thiazoline carboxylic acid ester represented by Structural Formula (V):
(d) hydrolyzing the alkylated substituted thiazoline carboxylic acid ester with base or acid, thereby forming an alkylated substituted thiazoline carboxylic acid represented by Structural Formula (VI):
(e) reacting the alkylated substituted thiazoline carboxylic acid with acid, thereby forming the 2-alkylated cysteine represented by Structural Formula (I).
2. The method of claim 1, wherein Ar is a substituted or unsubstituted phenyl group.
3. The method of claim 2, wherein Ar is phenyl.
4. The method of claim 1, wherein R*\u2014OH is selected from the group consisting of (1R,2R,3R,5S)-(\u2212)-isopinocamphenol and (1S,2R,5R)-(+)-isomenthol.
5. The method of claim 1, wherein the one or more bases of step (c) are selected from the group consisting of potassium t-butoxide, sodium methoxide, sodium ethoxide, and sodium amide.
6. The method of claim 1, wherein R1 is a substituted or unsubstituted C1-C4 alkyl group.
7. The method of claim 6, wherein R1 is methyl.
8. The method of claim 1, wherein X is iodine.
9. The method of claim 1, further comprising the step of purifying the alkylated substituted thiazoline carboxylic acid ester by resolving the enantiomers of the alkylated substituted thiazoline carboxylic acid ester.
10. The method of claim 9, wherein the (S)-isomer, based on carbon atom 4 as indicated in Structural Formula (V), of the alkylated substituted thiazoline carboxylic acid ester is isolated from the enantiomers of the alkylated substituted thiazoline carboxylic acid ester.
11. The method of claim 1 further comprising the step of purifying the alkylated substituted thiazoline carboxylic acid by resolving the enantiomers of the alkylated substituted thiazoline carboxylic acid.
12. The method of claim 11, wherein the (S)-isomer of the alkylated substituted thiazoline carboxylic acid is isolated from the enantiomers of the alkylated substituted thiazoline carboxylic acid.
13. A method of preparing a compound represented by Structural Formula (II):
or a salt thereof, the method comprising:
(a) coupling a compound represented by Structural Formula (VIII):
\u2003or a salt thereof, with a substituted or unsubstituted aryl nitrile of the formula Ar\u2014CN, wherein Ar is a substituted or unsubstituted aryl group; thereby forming a substituted thiazoline carboxylic acid represented by Structural Formula (IX):
(b) esterifying the substituted thiazoline carboxylic acid with R*\u2014OH, wherein R* is a substituted or unsubstituted alkyl group comprising one or more chiral carbon atoms; thereby forming a substituted thiazoline carboxylic acid ester represented by Structural Formula (X):
(c) alkylating the substituted thiazoline carboxylic acid ester with one or more bases and CH3X, wherein X is a leaving group; thereby forming an alkylated substituted thiazoline carboxylic acid ester represented by Structural Formula (XI):
(d) hydrolyzing the alkylated substituted thiazoline carboxylic acid ester with base or acid, thereby forming an alkylated substituted thiazoline carboxylic acid represented by Structural Formula (XII):
(e) optionally, purifying the (S)-isomer of the alkylated substituted thiazoline carboxylic acid;
(f) reacting the (S)-isomer of the alkylated substituted thiazoline carboxylic acid with acid, thereby forming (S)-2-methylcysteine; and
(g) coupling (S)-2-methylcysteine with 2,4-dihydroxybenzonitrile, thereby forming the compound represented by Structural Formula (VII).