Author: claimsbot

1. A material for gas turbines, consisting essentially of:
an alloy of any one or more intermetallic compounds selected from the group of Be12M, but Be13M if M is Zr, Be10M, and Be17M2, where M is any one or more metallic elements selected from the group of Ti, V, Mo, W, Zr, Nb and Ta.
2. The material for gas turbines as recited in claim 1, wherein the alloy includes a composite phase including any two or more selected from the group of Be12M, but Be13M if M is Zr, Be10M, and Be17M2.
3. The material for gas turbines as recited in claim 1, wherein an average content x of M satisfies 7.7<x<10.5 (at %), but 7.1<x<10.5 (at %) if M is Zr.
4. The material for gas turbines as recited in claim 2, wherein an average content x of M satisfies 7.7<x<10.5 (at %), but 7.1<x<10.5 (at %) if M is Zr.
5. A material for gas turbines, wherein the alloy is produced by mixing, smelting, and casting one or more metals M selected from the group of Ti, V, Zr, Nb, Ta, Mo, W and Y, with Be and unavoidable impurities as a balance in a range of an average content x of M satisfying 7.7<x<10.5 (at %), but 7.1<x<10.5 (at %) if M is Zr.
6. The material for gas turbines as recited in claim 5, wherein a homogenizing treatment and furnace cooling are accomplished after casting.
7. The material for gas turbines as recited in claim 1, wherein the alloy is produced by casting and an average grain size of the alloy is 50 \u03bcm or less.
8. The material for gas turbines as recited in claim 7, wherein the casting is accomplished by a unidirectional solidification.
9. The material for gas turbines as recited in claim 1, wherein the alloy is produced by powder metallurgy and an average grain size of the material is 50 \u03bcm or less.
10. The material for gas turbines as recited in claim 5, wherein the alloy is produced by casting and an average grain size of the alloy is 50 \u03bcm or less.
11. The material for gas turbines as recited in claim 5, wherein the casting is accomplished by a unidirectional solidification.
12. The material for gas turbines as recited in claim 5, wherein the alloy is produced by powder metallurgy and an average grain size of the material is 50 \u03bcm or less.
13. A gas turbine rotor blade comprising the material for gas turbines as recited in claim 1.
14. A gas turbine rotor blade comprising the material for gas turbines as recited in claim 5.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An assembly adapted for insertion in a bath of electroplating solution for an electroplating operation on a workpiece, the workpiece having formed therein a plurality of through holes, wherein each said through hole has a first end and a second end, comprising:
a workpiece holder adapted to hold said workpiece such that said first ends of said through holes of said workpiece permit said electroplating solution to fill said through holes when said assembly is inserted in said bath;
a conductive plating base positioned against a surface of said workpiece and having a portion that covers said second ends of said through holes and contacts the electroplating solution that fills said through holes when said assembly is inserted in said bath, wherein said conductive plating base is electrically accessible externally of said electroplating solution when said assembly is inserted in said bath to permit application of a voltage to said conductive plating base to conduct an electroplating operation in said bath; and
a compression apparatus coupled to said workpiece holder pressing said conductive plating base against said surface of said workpiece with said portion covering said second ends of said through holes.
2. The assembly of claim 1, wherein said electroplating operation fills said through holes with a solid conductive material, and wherein said workpiece is a connection layer substrate for a multi-layer semiconductor apparatus.
3. The assembly of claim 2, wherein said workpiece is one of a semiconductor die, a semiconductor wafer, and a printed circuit board, and wherein said solid conductive material forms vias in said through holes.
4. The apparatus of claim 3, wherein said conductive plating base is a sacrificial copper foil.
5. The assembly of claim 1, including a sealing apparatus that seals a further portion of said conductive plating base from contact with said electroplating solution when said assembly is inserted in said bath.
6. The apparatus of claim 5, wherein:
said workpiece holder includes a first plate and a second plate; and
said compression apparatus includes a fastening arrangement coupling said first and second plates of said workpiece holder, and wherein said workpiece, said conductive plating base and said sealing apparatus are disposed between said first and second plates.
7. The apparatus of claim 6, wherein said sealing apparatus includes a first seal adjacent said workpiece and having therein an opening aligned with said workpiece.
8. The apparatus of claim 7, wherein said sealing apparatus includes a second seal adjacent said conductive plating base, and wherein said conductive plating base and said workpiece are disposed between said first and second seals.
9. The apparatus of claim 8, wherein said first seal is adjacent said first plate, and wherein said first plate has formed therein an opening aligned with said opening in said first seal to permit said electroplating solution to fill said through holes when said assembly is inserted in said bath.
10. The apparatus of claim 7, wherein said first seal is adjacent said first plate, and wherein said first plate has formed therein an opening aligned with said opening in said first seal to permit said electroplating solution to fill said through holes when said assembly is inserted in said bath.
11. The apparatus of claim 6, wherein said first plate and said second plate of said workpiece holder, and said fastening arrangement of said compression apparatus are made of Polyvinylidene Fluoride (PVDF), and said sealing arrangement includes a Viton gasket.
12. A method of filling a plurality of through holes in a workpiece with a solid conductive material, comprising:
immersing the workpiece in an electroplating solution, with the through holes covered at one end by a portion of a conductive plating base; and
during said immersing,
permitting the electroplating solution to fill the through holes in the workpiece and contact said portion of the conductive plating base, and
applying a voltage to the conductive plating base to enable an electroplating operation that deposits the solid conductive material on said portion of the conductive plating base to thereby fill the through holes with the solid conductive material.
13. The method of claim 12, including preventing the electroplating solution from contacting a further portion of the conductive plating base.
14. The method of claim 13, including forcibly pressing said portion of the conductive plating base against the workpiece.
15. The method of claim 13, wherein said preventing includes sealing said further portion of the conductive plating base from the electroplating solution.
16. The method of claim 15, wherein said sealing includes forcibly pressing a first seal against the conductive plating base.
17. The method of claim 16, wherein said sealing includes forcibly pressing a second seal against the first seal.
18. The method of claim 15, including forcibly pressing said portion of the conductive plating base against the workpiece.
19. The method of claim 18, wherein said sealing includes forcibly pressing a first seal against the conductive plating base.
20. The method of claim 19, wherein said sealing includes forcibly pressing a second seal against the first seal.

1. A method, comprising:
collecting inputs for a circuit board under test;
evaluating historical repair records using a neuron network;
providing repair actions for the circuit board based on the historical repair records; and
providing an output reflecting a particular component of the circuit board to be replaced or to be repaired, wherein the output is associated with a developed probability of successfully fixing an issue that was identified by the test.
2. The method of claim 1, wherein the inputs include fault syndromes and log files associated with the circuit board under test.
3. The method of claim 1, wherein at least one of the inputs of the neuron network is a syndrome vector extracted from a failure log.
4. The method of claim 1, wherein particular outputs having higher probabilities are selected as the repair actions.
5. The method of claim 1, wherein the neuron network is weighted using diagnosis knowledge weights.
6. The method of claim 1, wherein the inputs include syndromes selected based on hardware designs and software designs related to the circuit board.
7. The method of claim 1, wherein a resultant of the repair actions is fed back into the neuron network.
8. Logical, executable process steps encoded in one or more non-transitory, tangible, computer readable media when, executed by a processor, operate to perform operations comprising:
collecting inputs for a circuit board under test;
evaluating historical repair records using a neuron network;
providing repair actions for the circuit board based on the historical repair records; and
providing an output reflecting a particular component of the circuit board to be replaced or to be repaired, wherein the output is associated with a developed probability of successfully fixing an issue that was identified by the test.
9. The computer readable media of claim 8, wherein the inputs include fault syndromes and log files associated with the circuit board under test.
10. The computer readable media of claim 8, wherein at least one of the inputs of the neuron network is a syndrome vector extracted from a failure log.
11. The computer readable media of claim 8, wherein particular outputs having higher probabilities are selected as the repair actions.
12. The computer readable media of claim 8, wherein the neuron network is weighted using diagnosis knowledge weights.
13. The computer readable media of claim 8, wherein the inputs include syndromes selected based on hardware designs and software designs related to the circuit board.
14. The computer readable media of claim 8, wherein a resultant of the repair actions is fed back into the neuron network.
15. An apparatus, comprising:
a processor;
a memory element; and
a debugging tool, wherein the apparatus is configured for:
collecting inputs for a circuit board under test;
evaluating historical repair records using a neuron network;
providing repair actions for the circuit board based on the historical repair records; and
providing an output reflecting a particular component of the circuit board to be replaced or to be repaired, wherein the output is associated with a developed probability of successfully fixing an issue that was identified by the test.
16. The apparatus of claim 15, wherein the inputs include fault syndromes and log files associated with the circuit board under test.
17. The apparatus of claim 15, wherein at least one of the inputs of the neuron network is a syndrome vector extracted from a failure log.
18. The apparatus of claim 15, wherein particular outputs having higher probabilities are selected as the repair actions.
19. The apparatus of claim 15, wherein the neuron network is weighted using diagnosis knowledge weights.
20. The apparatus of claim 15, wherein the inputs include syndromes selected based on hardware designs and software designs related to the circuit board.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. An infrared detection element comprising:
a single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on a principal surface of said single-crystalline layer,
a ferroelectric layer formed on said first electrode layer and composed of a single-crystalline layer or a unidirectioally oriented layer, a distortion of which is elastically constrained by said single-crystalline base layer in a plain parallel to said principal surface of the single-crystalline base layer, and
a second electrode layer formed on said ferroelectric layer,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers.
2. An infrared detection element according to claim 1, wherein said ferroelectric layer has a perovskite structure.
3. An infrared detection element according to claim 1, wherein said ferroelectric layer has a main component of Ba1-xSrxTiO3 (01).
4. An infrared detection element according to claim 1, wherein said first electrode layer is made of a noble metal layer or of a conductive oxide layer having a perovskite structure and a thickness of 1 m or less.
5. An infrared detection element according to claim 2, wherein said single-crystalline base layer has a surface oriented to (001) direction and said ferroelectric layer is epitaxially grown or is orientatedly grown in the (001) direction.
6. An infrared detection element according to claim 2, wherein a b axes of said ferroelectric layer are formed in a plain parallel to said principal surface of said semiconductor layer and c axis of said ferroelectric layer is formed in a direction perpendicular to said principal surface of said semiconductor layer.
7. An infrared detection element comprising:
a silicon single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on a principal surface of said single-crystalline layer,
a ferroelectric layer formed on said first electrode layer and composed of a single-crystalline layer formed by an epitaxial growth or by an unidirectioally oriented layer formed by orientation growth on said principal surface of the single-crystalline base layer, and
a second electrode layer formed on said ferroelectric layer,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers.
8. An infrared detection element according to claim 7, wherein said ferroelectric layer has a perovskite structure.
9. An infrared detection element according to claim 8, wherein said ferroelectric layer has a main component of Ba1-xSrxTiO3 (01).
10. An infrared detection element according to claim 1, wherein said first electrode layer is made of a noble metal layer or a conductive oxide layer having a perovskite structure and a thickness of 1 m or less.
11. An infrared detection element comprising:
a silicon single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on a principal surface of said single-crystalline layer,
a single-crystalline ferroelectric layer formed fixedly on said first electrode layer,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers.
12. An infrared detection element according to claim 11, wherein said ferroelectric layer is fixedly formed on said first electrode layer by sputtering.
13. An infrared detection element according to claim 12, wherein said ferroelectric layer has a perovskite structure.
14. An infrared detection element according to claim 13, wherein said ferroelectric layer has a main component of Ba1-xSrxTiO3 (01).
15. An infrared detection element according to claim 14, wherein said first electrode layer is made of a noble metal layer or a conductive oxide layer having a perovskite structure.
16. An infrared detection element having:
a single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface, a first electrode layer formed on said principal surface of said single-crystalline layer,
a ferroelectric layer formed on said first electrode layer and composed of a first single-crystalline layer or a unidirectioally oriented layer, a distortion of which is elastically constrained by said single-crystalline base layer in a plain parallel to said principal surface of said single-crystalline base layer,
an infrared detection element having a second electrode layer formed on said ferroelectric layer,
a third electrode layer formed on said principal surface of said single-crystalline base layer,
a second ferroelectric layer formed on said first electrode layer and composed of a first single-crystalline layer or a unidirectioally oriented layer, a distortion of which is elastically constrained by said single-crystalline base layer in a plain parallel to said principal surface of said single-crystalline base layer,
a reference cell having a fourth electrode layer formed on said ferroelectric layer, and
an infrared reflection film formed on said reference cell,
wherein an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first second electrode layers, and an amount of a charge generated in said ferroelectric layer of said infrared detection element is detected as an electric signal from said third and fourth electrode layers, and wherein a difference between said electric signals is detected.
17. An infrared detection element according to claim 16, wherein said first and second ferroelectric layers have a perovskite structure.
18. An infrared detection element according to claim 17, wherein said first and second ferroelectric layers have a main component of Ba1-xSrxTiO3 (01).
19. An infrared detection element according to claim 18, wherein said first and third electrode layers are made of a noble metal layer or a conductive oxide layer having a perovskite structure.
20. An infrared detection element according to claim 19, wherein said single-crystalline layer is a single-crystalline silicon layer having a surface oriented to (001) direction and said first and second ferroelectric layers are epitaxially grown or are orientationally grown in said (001) direction.
21. An infrared detection element according to claim 20, wherein a and b axes of said ferroelectric layer are formed in said plain parallel to said principal surface of said semiconductor layer and c axis of said ferroelectric layer is formed in a direction perpendicular to said principal surface of said semiconductor layer.
22. An infrared detection element having a single-crystalline base layer with a thickness of 50 nm to 10 m having a principal surface,
a first electrode layer formed on said principal surface of said single-crystalline layer,
a first ferroelectric layer composed of a single-crystalline layer which is fixed on said first electrode layer,
an infrared detection element having a second electrode layer formed on said ferroelectric layer,
a third electrode layer formed on said principal surface of said single-crystalline base layer,
a second ferroelectric layer composed of a single-crystalline layer which is fixed on said third electrode layer,
a reference cell having a fourth electrode layer formed on said ferroelectric layer, and
an infrared reflection film formed on said reference cell,
wherein an amount of charge in said ferroelectric layer of said infrared detection element is detected as an electric signal from said first and said second electrode layers, and an amount of charge in said ferroelectric layer of said reference cell is detected as an electric signal from said third and said fourth electrode layers, and wherin a difference between said electric signals is detected.