1. A method of fabricating a semiconductor device, comprising:
forming first and second fins that protrude from a substrate and extend in a first direction and form a trench that separates the first and second fins in the first direction;
forming a field insulating layer on the substrate that fills the trench and covers the first and second fins;
etching the field insulating layer until top surfaces of the first and second fins are exposed;
forming an etch-stop layer pattern on the field insulating layer that fills the trench; and
partially exposing sidewalls of the first and second fins by etching the field insulating layer using the etch-stop layer pattern as a mask.
2. The method of claim 1, wherein a width of an upper portion of the trench in the first direction is smaller than a width of the etch-stop layer pattern in the first direction.
3. The method of claim 1, wherein the first and second fins are partially etched while the field insulating layer is etched.
4. The method of claim 3, wherein the top surfaces of the first and second fins are lower than a bottom surface of the etch-stop layer pattern.
5. The method of claim 1, further comprising, after the etching of the field insulating layer:
forming a first gate to intersect the first fin and forming a second gate on the etch-stop layer pattern; and
forming a recess in the first fin between the first and second gates,
wherein the field insulating layer within the trench is not exposed.
6. The method of claim 1, wherein the etch-stop layer pattern and the field insulating layer each comprise an oxide layer.
7. The method of claim 1, wherein the etch-stop layer pattern comprises a nitride layer.
8. A method of fabricating a semiconductor device, comprising:
forming a field insulating layer on a substrate, wherein the field insulating layer covers first and second fins that protrude from the substrate and fills a trench between the first and second fins;
etching the field insulating layer, wherein top surfaces of the first and second fins are exposed;
forming an etch-stop layer on the field insulating layer that fills the trench, wherein edges of the etch-stop layer extend past sidewalls of the trench; and
etching the field insulating layer using the etch-stop layer as a mask.
9. The method of claim 8, wherein the first and second fins extend in a first direction, and wherein a width of the trench contacting the etch-stop layer in a first direction is smaller than a width of the etch-stop layer in the first direction, and wherein etching the field insulating layer using the etch-stop as a mask comprises etching the field insulating layer to expose sidewalls of the first and second fins facing a second direction.
10. The method of claim 8, further comprising:
forming a first gate to intersect the first fin;
forming a dummy gate on the etch-stop layer; and
forming a recess in the first fin between the first and dummy gates using the etch-stop layer as a mask, wherein the field insulating layer within the trench is not exposed.
11. The method of claim 10, further comprising forming a spacer on the etch-stop layer disposed on a sidewall of the dummy gate prior to forming the recess, and wherein forming the recess in the first fin comprises forming the recess such that the spacer overlaps a sidewall of the recess facing the trench.
12. The method of claim 8, further comprising:
forming a first gate to intersect the first fin;
removing the etch-stop layer;
forming a dummy gate on the field insulating layer previously covered by the etch-stop layer;
forming a gate mask layer on the dummy gate;
forming a spacer disposed on a sidewall of the dummy gate; and
forming a recess in the first fin between the first and dummy gates using the gate mask layer and the spacer as a mask, wherein the field insulating layer within the trench is not exposed.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A pharmaceutical composition, comprising an antisense oligonucleotide which inhibits expression of TRPM-2 by tumor cells, and a pharmaceutically acceptable carrier suitable for human administration for providing the oligonucleotide to a mammalian subject to reduce expression of TRPM-2 wherein the antisense oligonucleotide comprises the sequence given by SEQ ID No. 4 and wherein the composition further comprises a second antisense oligodeoxynucleotide which inhibits expression of an anti-apoptotic protein other than TRPM-2.
2. The composition of claim 1, wherein the second antisense oligodeoxynucleotide is antisense Bcl-2 oligodeoxynucleotide.
3. The composition of claim 2, wherein the antisense oligonucleotide having the sequence given by SEQ ID No. 4 is modified to increase the stability of the ODN in vivo.
4. The pharmaceutical composition of claim 1, wherein the pharmaceutically acceptable carrier is a lipid carrier.
5. A pharmaceutical composition, comprising an antisense oligonucleotide which inhibits expression of TRPM-2 by tumor cells, and a pharmaceutically acceptable carrier suitable for human administration for providing the oligonucleotide to a mammalian subject to reduce expression of TRPM-2 wherein the antisense oligonucleotide comprises the sequence given by SEO ID No. 4, wherein the composition further comprises an additional antisense oligonucleotide that binds specifically to a sequence other than TRPM-2 mRNA.
6. The pharmaceutical composition according to claim 5, wherein the additional antisense oligonucleotide binds specifically to a sequence selected from among Bcl-2, Bcl-1x and c-myc.
7. The pharmaceutical composition according to claim 6, wherein the additional oligonucleotide consists of the sequence set forth in the Seq. ID No. 13.
8. The pharmaceutical composition of claim 1, where the oligonucleotide consists of the sequence given by SEQ ID No. 4.