Author: claimsbot

1. A method for fabricating a flash memory, comprising:
providing a semiconductor substrate
forming a first dielectric layer on a surface of the semiconductor substrate;
forming a first semiconductor layer on a surface of the first dielectric layer;
performing an ion implantation process onto a portion of the first semiconductor layer corresponding to a position of a subsequently formed floating gate;
performing an oxygen ion implantation process onto a portion of the first semiconductor layer between the position of the subsequently formed floating gate and the position of a subsequently formed first select gate to form an oxide layer;
forming a second dielectric layer having an opening exposing the position of the first select gate on the first semiconductor layer;
forming a second semiconductor layer on the second dielectric layer; and
forming a flash cell and a select gate structure by etching the first dielectric layer, the first semiconductor layer, the oxide layer, the second dielectric layer and the second semiconductor layer.
2. The method according claim 1, wherein:
the flash cell includes the N-type doped portion of the first semiconductor layer as the floating gate and a portion of the second semiconductor layer as a control gate; and
the select gate structure includes the first select gate formed by the portion of the first semiconductor exposed by the opening as the first select gate and a portion of the second semiconductor layer as a second select gate.
3. The method according claim 1, wherein:
ions for the ion implantation process are N-type ions.
4. The method according claim 1, before performing the ion implantation process onto the portion of the first semiconductor layer corresponding to the position of a subsequently formed floating gate, further including:
forming a first mask layer having a first opening exposing the portion of the first semiconductor layer corresponding to the position of the floating gate on the surface of the first semiconductor layer.
5. The method according claim 2, before performing the oxygen ion implantation process onto the portion of the first semiconductor layer between the position of the subsequently formed floating gate and the position of the subsequently formed first select gate, further including:
removing the first mask layer; and
forming a second mask layer having a second opening exposing the portion of the semiconductor layer between the position of the subsequently formed floating gate and the position of the subsequently formed first select gate.
6. The method according to claim 1, after performing the oxygen ion implantation process onto a portion of the first semiconductor layer between the position of the subsequently formed floating gate and the position of the subsequently formed first select gate, further including:
performing a first thermal annealing process.
7. The method according claim 1, after forming the second dielectric layer having an opening exposing the position of the first select gate, further including:
forming a third mask layer having a third opening exposing the position of the first select gate; and
forming the opening exposing the position of the first select gate by etching the second dielectric layer using the third mask layer as a mask.
8. The method according claim 1, wherein:
the first semiconductor layer is made of poly silicon; and
the second semiconductor layer is made of poly silicon.
9. The method according to claim 1, after forming the flash cell and the select gate structure, further including:
forming sidewall spacers on side surfaces of the flash cell and the select gate structure.
10. The method according to claim 1, after forming the second semiconductor layer, further including:
performing a P-type ion implantation process onto the second semiconductor layer; and
performing a second thermal annealing process.
11. The method according to claim 1, wherein:
N-type ions of the N-type ion implantation process include phosphorous ions, or arsenic ions.
12. The method according to claim 1, wherein:
a dose of the oxygen ion implantation process is in a range of approximately 5E12 atomcm2\u02dc1E15 atomcm2;
an energy of the oxygen ion implantation process is in a range of approximately 1 KeV\u02dc50 KeV; and
an implantation angle of the oxygen ion implantation process is in a range of approximately \u22125\xb0\u02dc5\xb0.
13. The method according to claim 1, wherein:
a thickness of the first semiconductor layer is in a range of approximately 500 \u212b\u02dc2000 \u212b.
14. The method according to claim 1, wherein:
a width of the oxide layer is equal to, or smaller than a minimum distance between the floating gate and the first select gate
15. The method according to claim 8, wherein:
a dose of the P-type ion implantation is in a range of approximately 5E14 atomcm2\u02dc5E15 atomcm2.
16. A flash memory, comprising:
a semiconductor substrate;
a flash cell having a floating gate dielectric layer formed on a surface of the semiconductor substrate, a floating gate formed on the floating gate dielectric layer, a control gate dielectric layer formed on the floating gate and the a control gate formed on the control gate dielectric layer formed on the semiconductor substrate;
a select gate structure having a select gate dielectric layer formed on the surface of the semiconductor substrate, a first select gate formed on the select gate dielectric layer and a second select gate formed on the first select gate formed on the semiconductor substrate;
a co-sourcedrain region formed in the semiconductor substrate between the flash cell and the select gate structure;
a source region in the semiconductor substrate at the other side of the flash cell; and
a drain region in the semiconductor substrate at the other side of the select gate structure.
17. The flash memory according to claim 16, wherein the flash cell and the select gate structure are formed by:
forming a first dielectric layer on a surface of the semiconductor substrate;
forming a first semiconductor layer on a surface of the first dielectric layer;
performing an ion implantation process onto a portion of the first semiconductor layer corresponding to a position of a subsequently formed floating gate;
performing an oxygen ion implantation process onto a portion of the first semiconductor layer between the position of the subsequently formed floating gate and a position of a subsequently formed first select gate to form an oxide layer;
forming a second dielectric layer having an opening exposing the position of the first select gate on the first semiconductor layer;
forming a second semiconductor layer on the second dielectric layer; and
forming a flash cell and a select gate structure by etching the first dielectric layer, the first semiconductor layer, the oxide layer, the second dielectric layer and the second semiconductor layer.
18. The flash memory according to claim 16, wherein:
the second dielectric layer includes a silicon oxide layer, a silicon nitride layer formed on the silicon oxide layer and a silicon oxide layer formed on the silicon nitride layer.
19. The flash memory according to claim 16, wherein:
the first semiconductor layer is made of poly silicon; and
the second semiconductor layer is made of poly silicon.
20. The flash memory according to claim 16, wherein:
sidewall spacers are formed on side surfaces of the flash cell and the select gate structure.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method in a mobile communication system for transferring information in a fixed-length message from a base station to at least one mobile station, wherein
content information is transferred in the payload portion of the message for defining the contents of the payload portion of the message, and
information elements defined by said content information are transferred in the payload portion of the message according to said content information.
2. A method according to claim 1 wherein said information elements comprise at least information elements containing position data.
3. A method according to claim 2 wherein said information elements define the location of at least one neighbor base station relative to the base station.
4. A method according to claim 1 wherein said content information defines a value range for data to be transferred corresponding to the binary value range of at least one information element.
5. A method according to claim 1 wherein said content information defines the magnitude of the step of the value of data to be transferred corresponding to the smallest binary value step of at least one information element.
6. A method according to claim 1 wherein information elements of predetermined length are transferred in the payload portion of the message in addition to the information elements defined in said content information.
7. A method according to claim 1 wherein said fixed-length message is an SMS-CB message.

1-20. (canceled)
21. A method of manufacturing a light emitting device, the method comprising:
providing a planar lead frame having a first lead and a second lead;
mounting a light emitting element on the first lead;
electrically connecting the light emitting element to the first lead and the second lead;
forming a resin frame surrounding the light emitting element so that a lower end of an inner surface of the resin frame is located only on the first lead; and
filling a first sealing resin in an inner side of the resin frame and sealing the light emitting element with the first sealing resin.
22. The method of manufacturing a light emitting device according to claim 21, the method further comprising disposing a second sealing resin to cover the resin frame and the first sealing resin, and at an outer side of the resin frame, to cover at least a part of the first lead and at least a part of the second lead.
23. The method of manufacturing a light emitting device according to claim 21, wherein the resin frame is formed so that a lower end of the outer surface of the resin frame is located on the first lead.
24. The method of manufacturing a light emitting device according to claim 21, further comprising arranging a molded resin between the first lead and the second lead.
25. The method of manufacturing a light emitting device according to claim 24, wherein the resin frame is formed so as to be positioned on a boundary between the molded resin and the first lead.
26. The method of manufacturing a light emitting device according to claim 21, wherein the resin frame is formed by supplying a raw material of the resin frame on the lead frame by a dispenser.
27. The method of manufacturing a light emitting device according to claim 21, wherein the light emitting element and the lead frame are connected with a bonding wire, and wherein the resin frame is formed by discharging a raw material of the resin frame over the bonding wire to across the bonding wire, and curing the raw material.
28. The method of manufacturing a light emitting device according to claim 21, wherein the resin frame is formed by disposing a first level of resin frame on the first lead, and then disposing a second level of resin frame with a smaller diameter than the first level of the resin frame on the first level of the resin frame.
29. The method of manufacturing a light emitting device according to claim 21, wherein the first sealing resin is filled so as to have same height as the height of the resin frame.
30. The method of manufacturing a light emitting device according to claim 21, wherein the second sealing resin is formed using a mold.
31. The method of manufacturing a light emitting device according to claim 21, wherein the resin frame contains titanium oxide.
32. The method of manufacturing a light emitting device according to claim 21, wherein the first sealing resin contains silicone.
33. The method of manufacturing a light emitting device according to claim 21, wherein the first sealing resin contains wavelength converting member.
34. The method of manufacturing a light emitting device according to claim 21, wherein the wavelength converting member is deposited in a layer on the upper surface of the light emitting element and on the upper surface of the first lead.
35. The method of manufacturing a light emitting device according to claim 21, wherein the second sealing resin contains silicone.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A controller having a software or hardware module to:
receive a request to filter access by a particular client device to network content over a network; and
cause access to network content by said client device to be filtered, whereby the client device is prevented from accessing undesirable network content.
2. The controller of claim 1 wherein the controller is to cause traffic associated with the client device to be directed to a content filtering device.
3. The controller of claim 1 wherein the controller is to send forwarding instructions to a network device to direct traffic associated with a client device whose access is to be filtered along a second path and to direct traffic associated with other client devices along a first path.
4. The controller of claim 3, wherein in response to receiving said request to filter access by a particular client device, the controller is to send an update instruction to said network device to update a list of client identifiers of client devices whose access is to be filtered.
5. The controller of claim 3 wherein the forwarding instructions are further to detect a long-lived flow on the second path and after detection of said long-lived flow, direct the long-lived flow along the first path.
6. The controller of claim 3 wherein the controller is an open flow controller and wherein said forwarding instructions use the open flow protocol.
7. The controller of claim 1 wherein in response to receiving a request to filter access to network content for a client device, the controller is to obtain a client identifier associated with said client device.
8. The controller of claim 1, wherein in response to receiving a request to stop filtering network access for a client device, the controller is to remove said client device from a list of client devices whose network access is to be filtered.
9. A system for filtering access by a client device to content over a network, said system comprising:
a request receiving module to receive a request to filter access by the client device;
a determining module to determine if a packet received by the system is associated with a client device for which a request has been received to filter access and forward packets associated with said client device to a content filter module;
a content filter module to filter access to network content by said client device;
and a processor to implement said request receiving module, determining module and content filter module.
10. The system of claim 9 wherein the system is provided by a service provider network.
11. The system of claim 9 wherein said determining module and content filter module are provided on separate physical devices.
12. The system of claim 9 wherein the content filter module is to determine whether packets it receives relate to content for which access by the client device is to be blocked and to block access to content which is to be blocked for said client device.
13. The system of claim 12 wherein the content filter module is to block access to content by at least one of blocking a request for access to such content from being transmitted and blocking download of such content.
14. The system of claim 9 wherein the determining module is provided on a network device through which the client device connects to the system.
15. The system of claim 14 wherein the client device is associated with a client identifier and the network device is to determine if a traffic flow is associated with that client identifier.
16. The system of claim 14 wherein the system comprises a controller to instruct said network device to direct packets received from the client device to a switched network location hosting said content filter module.
17. The system of claim 9 wherein the determining module is provided on a network device through which the system connects to network content.
18. The system of claim 9 wherein the system comprises a web portal through which a request to filter access by a specified client device may be sent by a user of a client device.
19. A non-transitory machine readable storage medium storing machine readable instructions for filtering access to network content by a client device, the instructions comprising instructions for causing a processor to:
receive a request to filter access to network content by a client device; and
cause traffic associated with said client device to be directed along a second path which includes a content filter and allow traffic associated with a client device for which there is no active filter request to be directed along a first path which does not include said content filter.
20. The non-transitory machine readable storage medium of claim 19 wherein the instructions are to cause access to network content by said client device to be filtered only for certain client device applications.