1. A method for producing 2-hydroxy-4-(methylthio)-butyronitrile, comprising:
reacting 3-methylmercaptopropionaldehyde with hydrogen cyanide in the presence of a base as catalyst in a main reaction zone of a multizone reactor to form a reaction mixture comprising the 2-hydroxy-4-(methylthio)butyronitrile, unreacted 3-methylmercaptopropionaldehyde, the catalyst and residual amounts of gaseous hydrogen cyanide;
removing the residual gaseous hydrogen cyanide from the main reaction zone to an absorption and post-reaction zone of the reactor which comprises a mixture of 3-methylmercaptopropionaldehyde and the catalyst; and
further reacting the gaseous hydrogen cyanide with the 3-methylmercaptopropionaldehyde in the absorption and post reaction zone.
2. The method according to claim 1, further comprising transferring a portion of the reaction mixture to the absorption and post-reaction zone.
3. The method according to claim 1, wherein the main reaction zone comprises a stirred reactor or a loop reactor.
4. The method according to claim 1, wherein the main reaction zone comprises a jet pump and the jet pump mixes a hydrogen cyanide feed gas with the reaction mixture.
5. The method according to claim 1, wherein the absorption and post-reaction zone comprises a device for contacting a gas with a liquid, the device being at least one selected from the group consisting of a column, a tray column, a packed-bed column, a bubble-column reactor, a droplet column, a reactor having a mechanically agitated container, a submerged jet reactor and a jet pump.
6. The method according to claim 1, wherein the absorption and post-reaction zone is a component of a loop reactor.
7. The method according to claim 1, wherein the hydrogen-cyanide is fed to the main reaction zone as a product gas from a plant for producing hydrogen cyanide which is connected to the reactor.
8. The method according to claim 7, a hydrogen cyanide content of the feed product gas is 1 to 99% by weight.
9. The method according to claim 1, wherein the catalyst is selected from the group consisting of a low-molecular-weight amine, a heterogeneous amine, a solution of an inorganic base, and a mixture of an acid and a low-molecular-weight amine.
10. The method according to claim 9, wherein the catalyst is a low-molecular-weight amine, which is selected from the group consisting of a tri-(C1-C12-alkyl)amine, a dialkylaralkylamine, a dialkylarylamine and a heterocyclic amine.
11. The method according to claim 9, wherein the catalyst is a polyvinylpyridine or a heterogeneous amine which is of formula (I)
wherein
R1 and R2 are each independently hydrogen, C1 to C12alkyl, aryl or heteroaryl;
X is a number between 0 and 6, and
A is a natural or synthetic resin.
12. The method according to claim 11, wherein the catalyst is a heterogeneous amine of formula I and is a polymer-bound base selected from the group consisting of homologous dialkylaminoalkylpolystyrenes and dialkylaminomacroreticular resins.
13. The method according to claim 12, wherein the catalyst of formula I is at least one selected from the group consisting of diethylaminoethylpolystyrene, diethylaminomethylpolystyrene, dimethylaminomethylpolystyrene, diethylaminomethyl-macroreticular resin and dimethylaminoethylpolystyrene.
14. The method according to claim 9, wherein the catalyst is an inorganic base which is at least one selected from the group consisting of an alkali metal hydroxide, an alkali metal cyanide, an alkali metal carbonate, and an alkali metal hydrogencarbonate.
15. The method according to claim 9, wherein the catalyst is a mixture of an acid and a low-molecular-weight amine and the acid is at least one selected from the group consisting of organic carboxylic acids, organic sulfonic acids and mineral acids.
16. The method according to claim 1, wherein a pH of the reaction mixture in the main reaction zone and the absorption and post-reaction zone is 4.5 to 6.0, as measured with a pH electrode at 23\xb0 C. and a water content of 2 to 14% by weight.
17. The method according to claim 1, wherein a temperature of the main reaction zone is from 20\xb0 C. to 80\xb0 C.
18. The method according to claim 1, wherein a temperature of the absorption and post-reaction zone is from 0\xb0 C. to 30\xb0 C.
19. The method according to claim 1, further comprising reacting residual 3-(methylthio)propanal with residual hydrogen cyanide in a process stream discharged from the reactor in a post-reactor which is upstream of a MMP-cyanohydrin product discharge site,
wherein a temperature in the post reactor is from 20\xb0 C. to 80\xb0 C.
20. The method according to claim 1, wherein an absolute pressure of the reactor is from 0.9 to 5 bar.
21. The method according to claim 1, wherein the molar ratio of hydrogen cyanide to 3-(methylthio)propanal in the main reaction zone is from 0.98 to 1.03.
22. The method according to claim 1, wherein a weight ratio of catalyst to 3-(methylthio)propanal in the main reaction zone is from 0.00005 to 0.002.
23. The method according to claim 1, wherein the method is conducted batchwise, semicontinuously, or continuously.
24. A process for producing D,L-methionine or 2-hydroxy-4-methylthiobutyric acid, comprising employing the 2-hydroxy-4-(methylthio)butyronitrile produced according to claim 1 or incorporating the method according to claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device provided with: a semiconductor substrate; a pad formed above the semiconductor substrate; a surface protective film to cover the pad; a first opening being formed in the surface protective film and exposing a part of the surface of the pad; a protective insulating film formed over the surface protective film; a wiring layer gutter being formed in the protective insulating film and communicating with the first opening; and a wiring layer embedded into the first opening and the wiring layer gutter and coupled electrically to the pad.
2. A semiconductor device according to claim 1,
wherein, in the protective insulating film, a second opening communicating with the first opening and the wiring layer gutter formed integrally with the second opening are formed.
3. A semiconductor device according to claim 1,
wherein a barrier film to inhibit a wiring material including the wiring layer from migrating into the protective insulating film is formed between the side surface of the wiring layer gutter and the wiring layer.
4. A semiconductor device according to claim 1,
wherein the side surface of the wiring layer gutter inclines so as to form a taper.
5. A semiconductor device according to claim 1,
wherein the surface of the wiring layer is lower than the surface of the protective insulating film.
6. A semiconductor device according to claim 1,
wherein the surface of the wiring layer is exposed.
7. A semiconductor device according to claim 1,
wherein a bonding wire is coupled to the surface of the wiring layer.
8. A semiconductor device according to claim 7,
wherein the bonding wire comprises a material containing copper as the main component.
9. A semiconductor device according to claim 1,
wherein the wiring layer comprises a wiring material containing silver as the main component.
10. A semiconductor device according to claim 1,
wherein the protective insulating film comprises a polyimide resin film.
11. A semiconductor device according to claim 1,
wherein an interface extending from the bottom surface of the wiring layer gutter does not exist in the protective insulating film.
12. A semiconductor device according to claim 1,
wherein a wire coupling conductive film is formed in a first region of the surface of the wiring layer.
13. A semiconductor device according to claim 12,
wherein the surface of the wiring layer excluding the first region is covered with an insulating film.
14. A semiconductor device according to claim 13,
wherein the wire coupling conductive film extends over the first region to a partial region of the insulating film.
15. A semiconductor device according to claim 1,
wherein a wire coupling conductive film is formed in the whole region of the surface of the wiring layer.
16. A manufacturing method of a semiconductor device including the processes of: (a) preparing a semiconductor substrate over which a pad and a surface protective film covering the pad and having a first opening exposing a part of the surface of the pad are formed; (b) forming a protective insulating film over the surface protective film including the interior of the first opening; (c) by pressing a mold in which a first protrusion and a second protrusion are formed to the protective insulating film, integrally forming a second opening corresponding to the first protrusion and communicating with the first opening and a wiring layer gutter corresponding to the second protrusion and communicating with the second opening in the protective insulating film; and (d) forming a wiring layer in the interior of the wiring layer gutter.
17. A manufacturing method of a semiconductor device according to claim 16,
wherein the manufacturing method includes the processes of: between the process (c) and the process (d), (e) forming a barrier film to inhibit a wiring material including the wiring layer from migrating into the protective insulating film over the surface of the pad exposed through the first opening, the side surface of the first opening, the inner wall of the second opening, and the protective insulating film; and after the process (d), (f) removing the barrier film formed over the protective insulating film.
18. A manufacturing method of a semiconductor device according to claim 16,
wherein the process (d) includes the processes of: (d1) printing the wiring material of the wiring layer in the interior of the wiring layer gutter; and (d2) applying heat treatment to the wiring material.
19. A manufacturing method of a semiconductor device according to claim 16,
wherein the manufacturing method includes the processes of, between the process (c) and the process (d): (g) separating the mold from the protective insulating film; and (h) applying heat treatment to the protective insulating film after the process (g).