Author: claimsbot

1. A color filter substrate, comprising:
a first colored layer, a second colored layer, and a third colored layer that are arranged on a transparent substrate and that have mutually different hues; and
a common electrode disposed so as to cover the first colored layer, the second colored layer, and the third colored layer,
wherein the common electrode comprises: a first transparent electrode and a second transparent electrode that are disposed to overlap the first colored layer and the second colored layer, respectively, and that are made of a first transparent conductive film; a third transparent electrode that is disposed to overlap the third colored layer, the third transparent electrode being made of a second transparent conductive film that is different from the first transparent conductive film; and a fourth transparent electrode that is disposed to overlap the first colored layer, the fourth transparent electrode being made of the second transparent conductive film.
2. The color filter substrate according to claim 1, wherein the fourth transparent electrode is formed on the first transparent electrode, and
wherein the first transparent conductive film has a higher etching resistance than that of the second transparent conductive film.
3. The color filter substrate according to claim 2, wherein the first transparent conductive film is a polycrystalline indium tin oxide film, and
wherein the second transparent conductive film is an amorphous indium tin oxide film.
4. The color filter substrate according to claim 3, wherein the first transparent conductive film is formed by annealing an amorphous indium tin oxide film.
5. The color filter substrate according to claim 2, wherein the first transparent conductive film is a polycrystalline indium tin oxide film, and
wherein the second transparent conductive film is an indium zinc oxide film.
6. The color filter substrate according to claim 5, wherein the first transparent conductive film is formed by annealing an amorphous indium tin oxide film.
7. The color filter substrate according to claim 1, wherein the first transparent conductive film and the second transparent conductive film have mutually different film thicknesses.
8. A display panel, comprising:
an element substrate and a color filter substrate disposed to face each other; and
a display medium layer disposed between the element substrate and the color filter substrate,
wherein the color filter substrate comprises:
a first colored layer, a second colored layer, and a third colored layer that are arranged on a transparent substrate and that have mutually different hues; and
a common electrode disposed so as to cover the first colored layer, the second colored layer, and the third colored layer, and
wherein the common electrode comprises: a first transparent electrode and a second transparent electrode that are disposed to overlap the first colored layer and the second colored layer, respectively, and that are made of a first transparent conductive film; a third transparent electrode that is disposed to overlap the third colored layer, the third transparent electrode being made of a second transparent conductive film that is different from the first transparent conductive film; and a fourth transparent electrode that is disposed to overlap the first colored layer, the fourth transparent electrode being made of the second transparent conductive film.
9. A method of manufacturing a color filter substrate that comprises:
a first colored layer, a second colored layer, and a third colored layer that are arranged on a transparent substrate and that have mutually different hues; and
a common electrode disposed so as to cover the first colored layer, the second colored layer, and the third colored layer,
the method comprising:
a colored layer forming process of forming the first colored layer, the second colored layer, and the third colored layer on the transparent substrate;
a first transparent conductive film patterning process of forming a portion of the common electrode by forming a first transparent conductive film so as to cover at least the first colored layer and the second colored layer by sputtering, and by thereafter patterning said first transparent conductive film to form a first transparent electrode and a second transparent electrode that respectively overlap the first colored layer and the second colored layer; and
a second transparent conductive film patterning process of forming a remaining portion of the common electrode by forming a second transparent conductive film, which is different from the first transparent conductive film, so as to cover at least the first transparent electrode and the third colored layer by sputtering, and by thereafter patterning said second transparent conductive film to form a third transparent electrode and a fourth transparent electrode that respectively overlap the third colored layer and the first transparent electrode.
10. The method of manufacturing a color filter substrate according to claim 9, wherein the first transparent conductive film has a higher etching resistance than that of the second transparent conductive film.
11. The method of manufacturing a color filter substrate according to claim 10, wherein the first transparent conductive film is a polycrystalline indium tin oxide film, and
wherein the second transparent conductive film is an amorphous indium tin oxide film.
12. The method of manufacturing a color filter substrate according to claim 11, wherein, in the first transparent conductive film patterning process, the first transparent conductive film is formed by forming an amorphous indium tin oxide film so as to cover at least the first colored layer and the second colored layer, and by thereafter poly-crystallizing said amorphous indium tin oxide film through annealing.
13. The method of manufacturing a color filter substrate according to claim 10, wherein the first transparent conductive film is a polycrystalline indium tin oxide film, and
wherein the second transparent conductive film is an indium zinc oxide film.
14. The method of manufacturing a color filter substrate according to claim 13, wherein, in the first transparent conductive film patterning process, the first transparent conductive film is formed by forming an amorphous indium tin oxide film so as to cover at least the first colored layer and the second colored layer, and by thereafter poly-crystallizing said amorphous indium tin oxide film through annealing.
15. The method of manufacturing a color filter substrate according to claim 9, wherein the first transparent conductive film and the second transparent conductive film have mutually different film thicknesses.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A system for generating an output clock signal that has a predetermined phase relative to an input clock signal, comprising:
a plurality of first delay circuits coupled in series with each other from an initial first delay circuit that is coupled to receive the input clock signal to a final first delay circuit, each of the first delay circuits providing a first delay to a signal applied to its input, the first delay circuits being responsive to a first transition of the input clock signal to propagate a signal through the first delay circuits from the initial first delay circuit toward the final first delay circuit; and
a plurality of second delay circuits coupled in series with each other, each of the second delay circuits being coupled to a respective one of the first delay circuits in reverse order so that signals are coupled through the second delay circuits in a direction that is opposite the direction through which signals are coupled through the first delay circuits, each of the second delay circuits providing a second delay to a signal applied to its input that is a predetermined percent of the first delay, each of the second delay circuits generating an output signal that substantially mirrors an output signal from the respective first delay circuit at a second transition of the input clock signal, the second delay circuits being responsive to the second transition of the input clock signal to propagate the output signals generated by the second delay circuits to a final second delay circuit that is coupled to the initial first delay circuit, the output clock signal being generated by the final second delay circuit.
2-30. (canceled)
31. The system of claim 1 wherein the predetermined percent comprises 50 percent.
32. The system of claim 1 wherein the output clock signal has a predetermined phase relative to the input clock signal.
33. The system of claim 1 wherein the outputs of the first delay circuits are set to a first logic level responsive to one logic level of the input clock signal, and wherein a second logic level propagates through the first delay circuits responsive to another logic level of the input clock signal.
34. A modified synchronized mirror delay circuit, comprising:
a plurality of first delay circuits coupled in series with each other, each of the first delay circuits having a first delay; and
a plurality of second delay circuits coupled in series with each other, each of the second delay circuits being directly coupled to a respective one of the first delay circuits in a manner of a synchronized mirror delay, each of the second delay circuits having a second delay that is a predetermined percent of the first delay.
35. The modified synchronized mirror delay circuit of claim 34 wherein the predetermined percent comprises 50 percent.
36. The modified synchronized mirror delay circuit of claim 34 further comprising the initial first delay circuit being coupled to receive an input clock signal.
37. A clock doubler circuit, comprising:
a plurality of first delay circuits coupled in series with each other from an initial first delay circuit that is coupled to receive the input clock signal to a final first delay circuit, each of the first delay circuits providing a first delay to a signal applied to its input, the first delay circuits being responsive to a first transition of the input clock signal to propagate a signal through the first delay circuits from the initial first delay circuit toward the final first delay circuit; and
a plurality of second delay circuits coupled in series with each other, each of the second delay circuits being coupled to a respective one of the first delay circuits in reverse order so that signals are coupled through the second delay circuits in a direction that is opposite the direction through which signals are coupled through the first delay circuits, each of the second delay circuits providing a second delay to a signal applied to its input that is a predetermined percent of the first delay, each of the second delay circuits generating an output signal that substantially mirrors an output signal from the respective first delay circuit at a second transition of the input clock signal, the second delay circuits being responsive to the second transition of the input clock signal to propagate the output signals generated by the second delay circuits to a final second delay circuit that is coupled to the initial first delay circuit, the final second delay circuit generating a first clock signal at its output;
a plurality of third delay circuits coupled in series with each other from an initial third delay circuit to a final third delay circuit, each of the third delay circuits providing a third delay to a signal applied to its input that is a compliment of the input clock signal, the third delay circuits being responsive to the second transition of the input clock signal to propagate a signal through the third delay circuits from the initial third delay circuit toward the final third delay circuit;
a plurality of fourth delay circuits coupled in series with each other, each of the fourth delay circuits being coupled to a respective one of the third delay circuits in reverse order so that signals are coupled through the fourth delay circuits in a direction that is opposite the direction through which signals are coupled through the third delay circuits, each of the fourth delay circuits providing a fourth delay to a signal applied to its input that is the predetermined percent of the third delay, each of the fourth delay circuits generating an output signal that substantially mirrors an output signal from the respective third delay circuit at the first transition of the input clock signal, the fourth delay circuits being responsive to the first transition of the input clock signal to propagate the output signals generated by the fourth delay circuits to a final fourth delay circuit that is coupled to the initial third delay circuit, the final fourth delay circuit generating a second clock signal at its output; and
a logic circuit coupled to receive the first clock signal from the output of the final second delay circuit and the second clock signal from the output of the final fourth delay circuit, the logic circuit being operable to combine the first and second clock signals to generate the output clock signal.
38. The clock doubler circuit of claim 37 wherein the outputs of the first delay circuits are set to a first logic level responsive to one logic level of the input clock signal, wherein the outputs of the third delay circuits are set to the first logic level responsive to another logic level of the input clock signal that is different from the one logic level, wherein a second logic level propagates through the first delay circuits responsive to the another logic level of the input clock signal, and wherein the second logic level propagates through the third delay circuits responsive to the one logic level of the input clock signal.
39. The clock doubler circuit of claim 37 wherein the predetermined percent comprises 50 percent.
40. The clock doubler circuit of claim 37, further comprising:
a plurality of fifth delay circuits coupled in series with each other, each of the fifth delay circuits being coupled to a respective one of the first delay circuits in reverse order so that signals are coupled through the fifth delay circuits in a direction that is opposite the direction through which signals are coupled through the first delay circuits, each of the fifth delay circuits providing a fifth delay to a signal applied to its input that is substantially the same as the first delay, each of the fifth delay circuits generating an output signal that substantially mirrors an output signal from the respective first delay circuit at the second transition of the input clock signal, the fifth delay circuits being responsive to the second transition of the input clock signal to propagate the output signals generated by the fifth delay circuits to a final fifth delay circuit that is coupled to the initial first delay circuit, a third output clock signal being generated by the final fifth delay, the third output clock signal being coupled to an input of the second flip-flop; and
a plurality of sixth delay circuits coupled in series with each other, each of the sixth delay circuits being coupled to a respective one of the third delay circuits in reverse order so that signals are coupled through the sixth delay circuits in a direction that is opposite the direction through which signals are coupled through the third delay circuits, each of the sixth delay circuits providing a sixth delay to a signal applied to its input that is substantially the same as the third delay, each of the sixth delay circuits generating an output signal that substantially mirrors an output signal from the respective sixth delay circuit at the first transition of the input clock signal, the sixth delay circuits being responsive to the first transition of the input clock signal to propagate the output signals generated by the sixth delay circuits to a final sixth delay circuit that is coupled to the initial third delay circuit, a fourth output clock signal being generated by the final sixth delay circuit, the fourth output clock signal being coupled to an input of the first flip-flop.
41. The clock doubler circuit of claim 37 wherein the third delay is equal to the first delay.
42. A memory device, comprising:
a row address circuit operable to receive and decode row address signals applied to external address terminals of the memory device;
a column address circuit operable to receive and decode column address signals applied to the external address terminals;
a memory cell array operable to store data written to the array at a location determined by the decoded row address signals and the decoded column address signals;
read data path circuit operable to couple read data signals from each of the arrays to external data terminals of the memory device, the read data path circuit being operable to apply the read data signals to the external data terminals responsive to a read data strobe signal;
write data path circuit operable to couple write data signals from the external data terminals of the memory device and to couple the write data signals to one of the arrays;
command decoder operable to decode a plurality of command signals applied to respective external command terminals of the memory device, the command decoder being operable to generate control signals corresponding to the decoded command signals; and
signal generator operable to generate the write data strobe signal, the signal generator comprising:
plurality of first delay circuits coupled in series with each other from an initial first delay circuit that is coupled to receive an input clock signal to a final first delay circuit, each of the first delay circuits providing a first delay to a signal applied to its input, the first delay circuits being responsive to a first transition of the input clock signal to propagate a signal through the first delay circuits from the initial first delay circuit toward the final first delay circuit; and
plurality of second delay circuits coupled in series with each other, each of the second delay circuits being coupled to a respective one of the first delay circuits in reverse order so that signals are coupled through the second delay circuits in a direction that is opposite the direction through which signals are coupled through the first delay circuits, each of the second delay circuits providing a second delay to a signal applied to its input that is approximately half the delay of the first delay, each of the second delay circuits generating an output signal that substantially mirrors an output signal from the respective first delay circuit at a second transition of the input clock signal, the second delay circuits being responsive to the second transition of the input clock signal to propagate the output signals generated by the second delay circuits to a final second delay circuit that is coupled to the initial first delay circuit, the write data strobe signal being generated by the final second delay circuit.
43. The memory device of claim 42 wherein the outputs of the first delay circuits are set to a first logic level responsive to one logic level of the input clock signal, and wherein a second logic level propagates through the first delay circuits responsive to another logic level of the input clock signal.
44. The memory device of claim 42 wherein the a memory cell array comprises a dynamic random access memory array.
45. A system for generating an output clock signal that has a predetermined phase relative to an input clock signal, comprising:
plurality of first delay circuits coupled in series with each other from an initial first delay circuit that is coupled to receive the input clock signal to a final first delay circuit, each of the first delay circuits providing a first delay to a signal applied to its input, the first delay circuits being responsive to a first transition of the input clock signal to propagate a signal through the first delay circuits from the initial first delay circuit toward the final first delay circuit;
plurality of second delay circuits coupled in series with each other, each of the second delay circuits being coupled to a respective one of the first delay circuits in reverse order so that signals are coupled through the second delay circuits in a direction that is opposite the direction through which signals are coupled through the first delay circuits, each of the second delay circuits providing a second delay to a signal applied to its input that is a predetermined percent of the first delay, each of the second delay circuits generating an output signal that substantially mirrors an output signal from the respective first delay circuit at a second transition of the input clock signal, the second delay circuits being responsive to the second transition of the input clock signal to propagate the output signals generated by the second delay circuits to a final second delay circuit that is coupled to the initial first delay circuit, the output clock signal being generated by the final second delay circuit;
plurality of third delay circuits coupled in series with each other from an initial third delay circuit to a final third delay circuit, each of the third delay circuits providing the third delay to a signal applied to its input that is a compliment of the input clock signal, the third delay circuits being responsive to the second transition of the input clock signal to propagate a signal through the third delay circuits from the initial third delay circuit toward the final third delay circuit; and
plurality of fourth delay circuits coupled in series with each other, each of the fourth delay circuits being coupled to a respective one of the third delay circuits in reverse order so that signals are coupled through the fourth delay circuits in a direction that is opposite the direction through which signals are coupled through the third delay circuits, each of the fourth delay circuits providing a fourth delay to a signal applied to its input that is the predetermined percent of the third delay, each of the fourth delay circuits generating an output signal that substantially mirrors an output signal from the respective third delay circuit at the first transition of the input clock signal, the fourth delay circuits being responsive to the first transition of the input clock signal to propagate the output signals generated by the fourth delay circuits to a final fourth delay circuit that is coupled to the initial third delay circuit, a second output clock signal being generated by final fourth delay circuit.
46. The system of claim 45 wherein the third delay is equal to the first delay.
47. The system of claim 45 wherein the predetermined percent comprises 50 percent.
48. A modified synchronized mirror delay circuit, comprising:
a plurality of first delay circuits coupled in series with each other, each of the first delay circuits having a first delay and being responsive to a clock signal; and
a plurality of second delay circuits coupled in series with each other, each of the second delay circuits being coupled to a respective one of the first delay circuits in a manner of a synchronized mirror delay, each of the second delay circuits having a second delay that is a predetermined percent of the first delay and being responsive to the clock signal;
a plurality of third delay circuits coupled in series with each other and being responsive to a compliment of the clock signal, each of the third delay circuits having a third delay; and
a plurality of fourth delay circuits coupled in series with each other, each of the fourth delay circuits being coupled to a respective one of the third delay circuits in a manner of a synchronized mirror delay, each of the fourth delay circuits having a fourth delay that is the predetermined percent of the third delay.
49. The modified synchronized mirror delay circuit of claim 48 wherein the predetermined percent comprises 50 percent.
50. A method, comprising:
propagating a first signal through a plurality of serially-coupled first delay elements responsive to a first transition of an input clock signal, each of the first delay elements providing a first delay;
determining a first number of first delay elements of the plurality of first delay elements that the first signal has propagated through between the first transition of the input clock signal and a second transition of the input clock signal; and
propagating a second signal through the first number of a plurality of serially-coupled second delay elements, each of the second delay elements providing a second delay that is different from the first delay.
51. The method of claim 50, further comprising generating an output clock signal, the output clock signal having a predetermined phase relative to the input clock signal.
52. The method of claim 50 wherein the first delay comprises a fraction of a cycle of the input clock signal.
53. The method of claim 50 wherein the second delay comprises substantially 50% of the first delay.
54. The method of claim 50 wherein the first signal comprises a signal complement of the input clock signal.
55. The method of claim 50, further comprising propagating a third signal through the first number of a plurality of serially-coupled third delay elements, each of the third delay elements providing a third delay that is different from the first delay and the second delay.
56. The method of claim 55, further comprising generating an output clock signal, the output clock signal having a predetermined phase relative to the input clock signal.
57. The method of claim 56 wherein the second delay comprises substantially 50% of the first delay, and wherein the third delay substantially 25% of the first delay.
58. The method of claim 56 wherein the second delay comprises substantially 50% of the first delay, and wherein the third delay substantially equals the first delay.
59. The method of claim 50, further comprising generating an output clock signal having a predetermined phase relative to the input clock signal by appropriately selecting a number of serially-coupled first and second delay elements that are used.
60. A circuit, comprising:
a plurality of serially-coupled first delay elements, the first delay elements operable to propagate a first signal through a first number of the first delay elements between a first transition of an input clock signal and a second transition of the input clock signal, each of the first delay elements providing a first delay; and
a plurality of serially-coupled second delay elements, each of the second delay elements coupled to a respective one of the first delay elements, the second delay elements operable to propagate a second signal through a second number of the second delay elements, the value of the second number being determined by the first number, the time required for the second signal to propagate through the second number of the second delay elements being a predetermined percentage of the time required for the first signal to propagate through the first number of the first delay elements.
61. The circuit of claim 60 wherein each of the second delay elements providing a second delay different from the first delay.
62. The circuit of claim 60 wherein the second number equals the first number.
63. The circuit of claim 60 wherein the plurality of serially-coupled second delay elements further operable to generate an output clock signal having a predetermined phase relative to the input clock signal.
64. The circuit of claim 60 wherein the first delay comprises a fraction of a cycle of the input clock signal.
65. The circuit of claim 64 wherein the second delay comprises substantially 50% of the first delay.
66. The circuit of claim 60 wherein the first signal comprises a signal complement of the input clock signal.
67. The circuit of claim 60, further comprising a plurality of serially-coupled third delay elements, each of the third delay elements coupled to a respective one of the first delay elements, the third delay elements operable to propagate a third signal through a third number of the plurality of third delay elements, the value of the third number being determined by the first number, the time required for the third signal to propagate through the third number of the third delay elements being a predetermined percentage of the time required for the first signal to propagate through the first number of the first delay elements.
68. The circuit of claim 67 wherein the plurality of serially-coupled second delay elements further operable to generate a second output clock signal having a predetermined phase relative to the input clock signal, and wherein the plurality of serially-coupled third delay elements further operable to generate a third output clock signal having a predetermined phase relative to the input clock signal.
69. The circuit of claim 68 wherein each of the second delay elements providing a second delay different from the first delay, and wherein each of the third delay elements providing a third delay different from the first delay and the second delay.
70. The circuit of claim 68 wherein the second number is different from the first number, and wherein the third number is equal to the first number.
71. The circuit of claim 68 wherein the second number equals the first number, and wherein the third number equals the first number.
72. The circuit of claim 70 wherein the second delay comprises substantially 50% of the first delay, and wherein the third delay substantially equals the first delay.
73. A memory device, comprising:
a memory cell array operable to store data; and
a signal generator operable to generate a write data strobe signal, the signal generator comprising:
a plurality of serially-coupled first delay elements, the first delay elements operable to propagate a first signal through a first number of first delay elements of the plurality of first delay elements between a first transition of an input clock signal and a second transition of the input clock signal, each of the first delay elements providing a first delay; and
a plurality of serially-coupled second delay elements, each of the second delay elements coupled to a respective one of the first delay elements, the second delay elements operable to propagate a second signal through a second number of the plurality of second delay elements, the value of the second number being determined by the first number, the time required for the second signal to propagate through the second number of the second delay elements being a predetermined percentage of the time required for the first signal to propagate through the first number of the first delay elements.
74. The memory device of claim 73, further comprising:
a row address circuit coupled to the memory cell array, the row address circuit operable to receive and decode row address signals applied to external address terminals of the memory device;
a column address circuit coupled to the memory cell array, the column address circuit operable to receive and decode column address signals applied to the external address terminals;
a read data path circuit coupled to the memory cell array, the read data path circuit operable to couple read data signals from the memory cell array to external data terminals of the memory device, the read data path circuit further operable to apply the read data signals to the external data terminals responsive to a read data strobe signal;
a write data path circuit coupled to the memory cell array, the write data path circuit operable to couple write data signals from the external data terminals to the memory cell array, the write data path circuit further operable to apply the write data signals to the memory cell array responsive to the write data strobe signal; and
a command decoder coupled to the row address circuit and the column address circuit, the command decoder operable to decode a plurality of command signals applied to respective external command terminals of the memory device, the command decoder further operable to generate control signals corresponding to the decoded command signals.
75. The memory device of claim 73 wherein the plurality of serially-coupled second delay elements further operable to output an output clock signal having a predetermined phase relative to the input clock signal.
76. The memory device of claim 73 wherein the second number equals the first number.
77. The memory device of claim 73 wherein the plurality of serially-coupled second delay elements are further operable to generate an output clock signal having a predetermined phase relative to the input clock signal.
78. The memory device of claim 77 wherein the first delay comprises a fraction of a cycle of the input clock signal.
79. The memory device of claim 78 wherein the second delay comprises substantially 50% of the first delay.
80. The memory device of claim 73 wherein the first signal comprises a signal complement of the input clock signal.
81. The memory device of claim 73, further comprising a plurality of serially-coupled third delay elements, each of the third delay elements coupled to a respective one of the first delay elements, the third delay elements operable to propagate a third signal through a third number of the plurality of third delay elements, the value of the third number being determined by the first number, the time required for the third signal to propagate through the third number of the third delay elements being a predetermined percentage of the time required for the first signal to propagate through the first number of the first delay elements.
82. The memory device of claim 81 wherein the plurality of serially-coupled second delay elements further operable to generate a second output clock signal having a predetermined phase relative to the input clock signal, and wherein the plurality of serially-coupled third delay elements further operable to generate a third output clock signal having a predetermined phase relative to the input clock signal.
83. The memory device of claim 82 wherein each of the second delay elements providing a second delay different from the first delay, and wherein each of the third delay elements providing a third delay different from the first delay and the second delay.
84. The memory device of claim 82 wherein the second number is equal to the first number, and wherein the third number is different from the first number.
85. The memory device of claim 82 wherein the second number equals the first number, and wherein the third number equals the first number.
86. The memory device of claim 83 wherein the second delay comprises substantially 50% of the first delay, and wherein the third delay substantially equals the first delay.

1. A seedless method for forming a semiconductor-graphene hybrid:
forming a graphene sheet on a support to form a supported graphene sheet having a graphene face;
exposing said supported graphene sheet to a solution comprising a semiconductor metal ion at a temperature below 100\xb0 C. and under ambient air pressure for a time so that said semiconductor grows on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet.
2. The method of claim 1 wherein said exposing step comprises orienting said supported graphene sheet face-up in said solution.
3. The method of claim 1 wherein said exposing step comprises orienting said supported graphene sheet face-down in said solution.
4. The method of claim 1 wherein said exposing step comprises floating said supported graphene sheet on the surface of said solution comprising said semiconductor metal ion, wherein said graphene face is facing down so that said semiconductor grows on said face of said graphene sheet.
5. The method of claim 1 wherein said forming step comprises growing a graphene sheet on a substrate using chemical vapor deposition; spin-coating said support onto said graphene sheet; and removing said substrate.
6. The method of claim 1 wherein said forming step comprise the steps of growing a graphene sheet on a copper or nickel substrate using chemical vapor deposition; spin-coating a polymethylmethacrylate, polyvinylpyrrolidone, or polystyrene support onto said graphene sheet; and removing said copper or nickel substrate.
7. The method of claim 1 wherein said graphene sheet comprises one to two layers of graphene.
8. The method of claim 1 wherein said semiconductor comprises a metal oxide grown on said graphene sheet.
9. The method of claim 1 wherein said semiconductor forms nanostructures or microstructures comprising rods on said graphene sheet.
10. A seedless method for forming a semiconductor-graphene hybrid:
forming a graphene sheet on a support to form a supported graphene sheet having a graphene face;
exposing said supported graphene sheet to a solution comprising a semiconductor metal ion at a temperature below 100\xb0 C. for a time so that said semiconductor grows on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet, and
wherein said semiconductor forms nanostructures or microstructures comprising rods on said graphene sheet, and
wherein said exposing step comprises orienting said supported graphene sheet face-up in said solution, wherein said rods are generally horizontally aligned on said graphene.
11. The method of claim 9 wherein said exposing step comprises floating said supported graphene sheet on the surface of said solution comprising said semiconductor metal ion such that said graphene face is facing down in solution, and wherein said rods are generally vertically aligned on said graphene.
12. The method of claim 9 wherein said rods have a hexagonal cross section.
13. The method of claim 1 wherein said semiconductor comprises zinc oxide, copper oxide or combinations thereof.
14. The method of claim 1 wherein said solution has a pH of about 8 to 11.
15. The method of claim 1 wherein said solution comprises zinc ions, and said semiconductor-graphene hybrid comprises a graphene sheet having zinc oxide nanorods andor microrods.
16. The method of claim 1 wherein said exposing occurs for about 1 to 15 hours.
17. The method of claim 1 wherein said exposing occurs at a temperature of about 60 to 100\xb0 C.
18. The method of claim 1 wherein said support comprises polymethylmethacrylate, polyvinylpyrrolidone, polystyrene, or combinations thereof.
19. A seedless method for forming a semiconductor-graphene hybrid:
forming a graphene sheet on a support to form a supported graphene sheet having a graphene face;
exposing said supported graphene sheet to a solution comprising a semiconductor metal ion at a temperature below 100\xb0 C. for a time so that said semiconductor grows on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet, and wherein said exposing step comprises orienting said supported graphene sheet in a first orientation for a first period of time and then orienting said supported graphene sheet in a second configuration for a second period of time.
20. The method of claim 1 wherein said exposing step comprises exposing said supported graphene sheet to an aqueous solution comprising semiconductor metal cations, and wherein said metal cations react with hydroxyl groups from solution which are attached to surface defects on said supported graphene sheet.
21. The method of claim 20 wherein said supported graphene sheet is floated on the surface of said aqueous solution comprising said semiconductor metal cations.
22. The method of claim 1 wherein said method results in a semiconductor-graphene hybrid having an electrical conductivity that is substantially the same as said graphene sheet alone.
23. A semiconductor-graphene hybrid prepared by the method comprising:
forming a graphene sheet on a support to form a supported graphene sheet having a graphene face:
exposing said supported graphene sheet to a solution comprising a semiconductor metal ion at a temperature below 100\xb0 C. and under ambient air pressure for a time so that said semiconductor grows on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet.
24. A seedless method for forming a semiconductor-graphene hybrid comprising exposing a supported graphene sheet to an aqueous basic solution comprising transition metal ions at a temperature below 100\xb0 C. and under ambient pressure for a time to provide a semiconductor comprising an oxide of the transition metal ions grown on said graphene sheet, and wherein said exposing occurs without seeding said graphene sheet.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for receiving a frequency modulated signal, characterized in that
the radio frequency signal is mixed into a low-frequency signal,
the falling and rising edges of said low-frequency, modulated signal are detected,
a second signal is formed on the basis of said edge detection, the frequency of the second signal being twice the frequency of said low-frequency signal, and
said second signal is frequency detected to form a demodulated signal.
2. A method according to claim 1, characterized in that the processing of the frequency modulated signal includes the following steps:
the antenna signal is filtered with a band pass filter,
the signal is amplified,
the signal is down-converted in at least two branches with phase-shifted local oscillator signals LO,
the signal is low pass filtered and
amplified.
3. A method according to claim 1, characterized in that the processing of the frequency modulated signal also includes the following steps:
the signals are phased in at least two branches,
the signals are summed into one branch,
the signal is low pass filtered,
amplified and
demodulated.
4. A method according to claim 1, characterized in that the demodulation of the frequency modulated signal includes the following steps:
the modulated signal is divided into two branches, the first one for the detection of the rising signal edge and the second one for the detection of the falling signal edge;
the rising edge of the modulated signal is detected in the first branch,
the modulated signal is inverted and the rising edge of the inverted, modulated signal is detected in the second branch, and
the signals processed in the first and the second branch are combined.
5. A method according to claim 1, characterized in that the demodulation of the frequency modulated signal includes the following steps:
the modulated signal is divided into two branches, the first one for the detection of the rising signal edge and the second one for the detection of the falling signal edge,
the rising edge of the modulated signal is detected in the first branch,
the falling edge of the modulated signal is detected in the second branch, and
the signals processed in the first and the second branch are combined.
6. A method according to claim 1, characterized in that pulses of a predetermined length are formed on the basis of said edge detection, and the pulses are summed to form said second signal.
7. An arrangement for receiving a frequency modulated signal, characterized in that it comprises
means for mixing a radio frequency signal into a low-frequency signal, and demodulator means, which comprise
means for detecting the falling and rising edges of said low-frequency signal,
means for forming a second signal on the basis of said edge detection, the frequency of the second signal being twice the frequency of said low-frequency signal, and
means for the frequency detection of said second signal.
8. An arrangement according to claim 7, characterized in that it comprises mixers and 0 and 90 phase shifters for mixing the signal of at least two branches with the signal of the local oscillator LO.
9. An arrangement according to claim 7, characterized in that it comprises 0 and 90 phase shifters, an adder and a demodulator of the frequency modulated signal.
10. An arrangement according to claim 7, characterized in that the demodulator of the frequency modulated signal comprises two branches, of which the upper branch comprises a pulse detector for detecting the rising edge of the frequency modulated signal to be demodulated, and the lower branch comprises an inverter and a pulse detector connected in series for detecting the falling edge of the frequency modulated signal to be demodulated, and an adder that combines the branches.
11. An arrangement according to claim 7, characterized in that the demodulator of the frequency modulated signal comprises two branches, of which the upper branch comprises a pulse detector for detecting the rising edge of the frequency modulated signal to be demodulated, and the lower branch comprises a pulse detector active on the falling edge of the signal for detecting the falling edge of the frequency modulated signal to be demodulated, and an adder that combines the branches.
12. An arrangement according to claim 7, characterized in that the means for detecting the edges of a low-frequency signal comprise a pulse generator for forming a pulse of a specified length as triggered by the edge of a low-frequency signal.
13. A mobile station, characterized in that it comprises an arrangement according to claim 7 for receiving a frequency modulated signal.