1. A disinfectant system, comprising:
a) a first chamber containing a first solution, said first solution including an alcohol, an organic carboxylic acid, and from 0.01 ppm, to 1,000 ppm by weight of a transition metal or alloy thereof based on the first solution weight content;
b) a second chamber containing a second solution including an activator; and
c) a dispenser;
wherein the system is configured for mixing the first solution with the second solution immediately before being dispensed, and wherein a peracid is formed after mixing.
2. A system as in claim 1, wherein the system is substantially free of chlorine and bromine-containing components.
3. A system as in claim 1, wherein the system is substantially free of iodophore-containing components.
4. A system as in claim 1, wherein the system is substantially free of phenolic-containing components.
5. A system as in claim 1, wherein the system is substantially free of quaternary ammonium-containing components.
6. A system as in claim 1, wherein the alcohol in the first solution is present in an amount of from 0.05 wt % to 10 wt %.
7. A system as in claim 1, wherein the alcohol in the first solution is present in an amount of from 0.1 wt % to 5 wt %.
8. A system as in claim 1, wherein the alcohol in the first solution is present in an amount of from 0.1 wt % to 1 wt %.
9. A system as in claim 1, wherein the alcohol is a C1-C24 alcohol.
10. A system as in claim 9, wherein the C1-C24 alcohol is selected from the group consisting of methanol, ethanol, propanol and isopropanol, butanols, pentanols, and mixtures thereof.
11. A system as in claim 9, wherein the alcohol is ethanol.
12. A system as in 1, wherein the alcohol is a polyhydric alcohol.
13. A system as in claim 1, wherein the alcohol is selected from the group consisting of sorbitol, polyvinyl alcohol, ethylene glycol, glycerin, propane-1,2-diol, and mixtures thereof.
14. A system as in claim 1, wherein the alcohol is polyvinyl alcohol.
15. A system as in claim 1, wherein the transition metal or alloy thereof is a Group VI to Group XI transition metal or alloy thereof.
16. A system as in claim 1, wherein the transition metal or alloy thereof is a Group X to Group XI transition metal or alloy thereof.
17. A system as in claim 1, wherein the transition metal or alloy thereof is selected from the group consisting of ruthenium, rhodium, osmium, iridium, palladium, platinum, copper, gold, silver, alloys thereof, and mixtures thereof.
18. A system as in claim 1, wherein the transition metal or alloy thereof is a colloidal transition metal or alloy thereof.
19. A system as in claim 18, wherein the colloidal transition metal is colloidal silver.
20. A system as in claim 1, wherein the transition metal or alloy thereof is an ionic transition metal.
21. A system as in claim 1, wherein the transition metal or alloy thereof is present at from 1 ppm to 500 ppm by weight.
22. A system as in claim 1, wherein the transition metal or allow thereof is present at from 10 ppm to 350 ppm by weight.
23. A system as in claim 1, wherein the organic carboxylic acid is selected from the group consisting of formic acid, acetic acid, oxalic acid, propanoic acid, lactic acid, butanoic acid, pentanoic acid, hexanoic acid, adipic acid, citric, benzoic acid, and mixtures thereof.
24. A system as in claim 1, wherein the organic carboxylic acid is citric acid.
25. A system as in claim 1, wherein the organic carboxylic acid is acetic acid.
26. A system as in claim 1, wherein the organic carboxylic acid is present at about 3 wt % to about 20 wt %.
27. A system as in claim 1, wherein the organic carboxylic acid is present at about 5 wt % to about 15 wt %.
28. A system as in claim 1, wherein the organic carboxylic acid is present at about 7 wt % to about 13 wt %.
29. A system as in claim 1, wherein the activator is present in the second solution at from about 0.01 wt % to 10 wt %.
30. A system as in claim 1, wherein the activator is present in the second solution at from about 0.1 to about 9 wt %.
31. A system as in claim 1, wherein the activator is present in the second solution at from about 0.5 wt % to about 7 wt %.
32. A system as in claim 1, wherein the activator is selected from the group consisting of methyl ethyl ketone peroxide, ozone, potassium superoxide, lithium peroxide, barium peroxide, sodium peroxide, calcium peroxide, strontium peroxide, magnesium peroxide, sodium percarbonate peroxide, sodium peroxide, carbamide(urea)peroxide, potassium peroxide, hydrogen peroxide, and combinations thereof.
33. A system as in claim 1, wherein the activator is hydrogen peroxide.
34. A system as in claim 1, wherein the activator is a metal peroxide.
35. A system as in claim 1, wherein the activator is ozone.
36. A system as in claim 1, wherein the first solution and the second solution are under pressure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a semiconductor layer formed of a III-V group nitride semiconductor;
a first silicon nitride film formed on the semiconductor layer;
a gate electrode formed on the first silicon nitride film;
a source electrode and a drain electrode formed on the semiconductor layer, the gate electrode is interposed between the source electrode and the drain electrode; and
a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, the second silicon nitride film containing oxygen and having an oxygen atom density lower than that of the first silicon nitride film,
wherein an oxygen atom density of the second silicon nitride film is one digit or more lower than an oxygen atom density of the first silicon nitride film and greater than 1\xd71018 atomscm3, and the oxygen atom density of the first silicon nitride film is equal to or lower than 1\xd71021 atomscm3.
2. The device according to claim 1, wherein the second silicon nitride film is formed in contact with the semiconductor layer.
3. The device according to claim 1, wherein the semiconductor layer has a stacked structure including an operation layer formed of GaN, and a barrier layer formed on the operation layer and formed of any of AlGaN, GaN, or InAlN, or a combination thereof.
4. A semiconductor device comprising:
a semiconductor layer formed of a III-V group nitride semiconductor;
a first silicon nitride film formed on the semiconductor layer;
a gate electrode formed on the first silicon nitride film;
a source electrode and a drain electrode formed on the semiconductor layer, the gate electrode is interposed between the source electrode and the drain electrode; and
a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, the second silicon nitride film containing oxygen and having an oxygen atom density lower than that of the first silicon nitride film,
wherein the oxygen atom density of the first silicon nitride film is equal to or higher than 1\xd71019 atomscm3 and equal to or lower than 1\xd71021 atomscm3, the oxygen atom density of the second silicon nitride film is equal to or higher than 1\xd71018 atomscm3 and equal to or lower than 1\xd71020 atomscm3.