Author: claimsbot

1. A gene transfer agent composition comprising a compound represented by any one of the following formulae DL-G1 to DL-G4:
R1R2NX(XH2)2;\u2003\u2003DL-G1:
R1R2NX(X(XH2)2)2;\u2003\u2003DL-G2:
R1R2NX(X(X(XH2)2)2)2;\u2003\u2003DL-G3:
and
R1R2NX(X(X(X(XH2)2)2)2)2,\u2003\u2003DL-G4:
where X represents \u2014CH2CH2CONHCH2CH2N\u2014,
wherein:
R1 represents an unsaturated long-chain aliphatic group; and
R2 represents an unsaturated long-chain aliphatic group or a saturated long-chain aliphatic group in the formulae.
2. The gene transfer agent composition according to claim 1, wherein the long-chain aliphatic group comprises an aliphatic group having 10 to 22 carbon atoms.
3. The gene transfer agent composition according to claim 1, further comprising a phospholipid.
4. The gene transfer agent composition according to claim 3, wherein the phospholipid comprises DOPE.
5. A method of transferring a gene into a cell, comprising applying the gene transfer agent composition according to claim 1 and a gene to a cell in vitro or in vivo, provided that a human is excluded.
6. A gene transfer kit, comprising the gene transfer agent composition according to claim 1.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A plasma display panel comprising:
barrier ribs configured to form a plurality of closed cells;
display electrodes formed on a front substrate; and
an address electrode formed on a rear substrate, with said barrier ribs disposed between said front and rear substrates to define a delta color pixel structure having a plurality of sub-pixels, wherein
each of the sub-pixels has a discharge region which is filled with a first discharge gas of at least 15% by volume, and a second discharge gas of 85% or less by volume, and wherein said first gas is a xenon gas.
2. The plasma display panel of claim 1, wherein said second gas is a neon-based or helium-based gas mixture.
3. The plasma display panel of claim 2, wherein said neon-based gas mixture is neon-argon or neon-krypton.
4. The plasma display panel of claim 3, wherein said helium-based gas mixture is helium-argon and helium-krypton.
5. The plasma display panel of claim 2, wherein an operation margin for the plasma display panel is not less than 10 voltages when said discharge region is filled with the xenon gas of 30% by volume.
6. The plasma display panel of claim 1, wherein said discharge region is coated with a phosphor layer.
7. A plasma display panel comprising:
barrier ribs configured to form a closed shape;
display electrodes formed on a front substrate; and
an address electrode formed on a rear substrate, with said barrier ribs disposed between said front and rear substrates to define a delta color pixel structure having a plurality of sub-pixels, wherein
each of the sub-pixels has a discharge region which is filled with a first discharge gas of 50% or less by volume, and a second discharge gas of 50% or more by volume, and wherein said first gas is a xenon gas, and
wherein an operation margin for the plasma display panel is not less than 10 voltages when said discharge region is filled with the xenon gas of 30% by volume.
8. The plasma display panel of claim 7, wherein said second gas is a neon-based or helium-based gas mixture.
9. The plasma display panel of claim 7, wherein said neon-based gas mixture is neon-argon, and neon-krypton.
10. The plasma display panel of claim 7, wherein said helium-based gas mixture is helium-argon and helium-krypton.
11. The plasma display panel of claim 7, wherein said discharge region is coated with a phosphor layer.
12. A method of constructing a plasma display panel comprising:
configuring barrier ribs to form a closed shape;
forming display electrodes on a front substrate; and
forming an address electrode on a rear substrate, with said barrier ribs disposed between said front and rear substrates to define a delta color pixel structure having a plurality of sub-pixels, wherein
each of the sub-pixels has a discharge region which is filled with a first discharge gas of 50% or less by volume, and a second discharge gas of 50% or more by volume, and wherein said first gas is a xenon gas, and
wherein an operation margin for the plasma display panel is not less than 10 voltages when said discharge region is filled with the xenon gas of 30% by volume.
13. The method of claim 12, wherein said second gas is a neon-based or helium-based gas mixture.
14. The method of claim 12, wherein said neon-based gas mixture is neon-argon and neon-krypton.
15. The method of claim 12, wherein said helium-based gas mixture is helium-argon and helium-krypton.
16. The method of claim 12, wherein said discharge region is coated with a phosphor layer.

1. A stabilized ladder unit comprising:
A) a ladder which includes
(1) two side rail units, each side rail unit including
(a) a plurality of sections which slidably fit together,
(b) a first section which is a top section when the ladder is in use,
(c) a second section which is a bottom section when the ladder is in use,
(c) a longitudinal axis which extends between the first section and the second section, and
(e) each section having an inner surface, an outer surface, a longitudinal axis which extends between the direction of the longitudinal axis, a first side edge which is an upper side edge when the ladder is in use and a second side edge which is a lower side edge when the ladder is in use, and

(2) a plurality of rungs which extend between the two side rail units, the rungs being located in a first plane on each section of the ladder;

B) an anti-roll unit which includes a bar mounted on the outer surface of each side rail of the first section of the ladder to extend away from the side rail on which it is mounted in a direction transverse to the longitudinal axis of the side rail on which it is mounted, the bars being located in the first plane;
C) an anti-tilt unit which includes a telescoping leg pivotally mounted on the outer surface of each side rail of the second section of the ladder to extend at an oblique angle to side rail on which it is mounted, each telescoping leg being located in a plane that is oriented at an oblique angle to the first plane;
D) an anti-fall unit which includes a telescoping leg pivotally mounted on the upper side edge of each side rail of the second section of the ladder to extend at an oblique angle to the side rail on which it is mounted, each telescoping leg being located in a plane that is oriented at an oblique angle to the first plane and at an oblique angle to the telescoping leg of the anti-tilt unit mounted on the side rail on which the telescoping leg of the anti-fall unit is mounted and at an oblique angle with respect to the bars of the anti-roll unit; and
E) a harness unit mounted on the ladder and including
(1) a cable housing on one side rail,
(2) a cable guide on the outer surface of one side rail of the first section of the ladder,
(3) a cable which extends between the cable housing and the cable guide on one side rail of the ladder,
(4) a cable loop movably attached to the cable, and
(5) a cable grip portion attached to the cable loop.
2. A stabilized ladder comprising:
A) two side rails and a plurality of rungs extending between the side rail, the rungs being located in a first plane;
B) an anti-twist unit which includes a bar that extends outward from each of the side rails in the first plane;
C) an anti-tilt unit which includes a telescoping leg pivotally mounted on each side rail, each telescoping leg of the anti-tilt unit being oriented to be at an oblique angle with respect to the first plane and at an oblique angle with respect to the bars of the anti-twist unit; and
D) an anti-fall back unit which includes a telescoping leg pivotally mounted on each side rail, each telescoping leg of the anti-fall back unit being oriented to be at an oblique angle with respect to the first plane and at an oblique angle with respect to the telescoping legs of the anti-tilt unit and at an oblique angle with respect to the bars of the anti-twist unit.
3. The stabilized ladder of claim 2, including a harness unit which includes a cable mounted on one side rail, and a cable grip movably attached to the cable.
4. The stabilized ladder of claim 3, where the cable grip includes a cable loop that is movable along the cable.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A tunnel magnetoresistance effect device, comprising:
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material disposed on the first antiferromagnetic material layer,
a second magnetization fixed layer of ferromagnetic material,
a first insulator layer between the first magnetization fixed layer and the second magnetization fixed layer,
a first tunnel barrier layer of dielectric material disposed on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material disposed on the first tunnel barrier layer.
2. The tunnel magnetoresistance effect device of claim 1, further comprising
a second tunnel barrier layer of dielectric material on the magnetization free layer,
a third magnetization fixed layer of ferromagnetic material on the second tunnel barrier layer,
a fourth magnetization fixed layer of ferromagnetic material,
a second insulator layer between the third magnetization fixed layer and the fourth magnetization fixed layer, and
a second antiferromagnetic material layer containing manganese on the fourth magnetization fixed layer.
3. The tunnel magnetoresistance effect device of claim 1, wherein the first insulation layer contains manganese.
4. The tunnel magnetoresistance effect device of claim 1, wherein the first insulation layer has an average thickness not thinner than 0.2 nanometers and not thicker than 2 nanometers.
5. A tunnel magnetoresistance effect device, comprising:
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer on the first magnetization fixed layer and comprising MX, where M is an element selected from the group consisting of manganese, titanium, tantalum, vanadium, aluminum, europium, and scandium, and X is an element selected from the group consisting of oxygen, nitrogen, and carbon,
a second magnetization fixed layer of ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
6. The tunnel magnetoresistance effect device of claim 5, further comprising
a second tunnel barrier layer of dielectric material on the magnetization free layer,
a third magnetization fixed layer of ferromagnetic material on the second tunnel barrier layer,
a second inserted layer on the third magnetization fixed layer, the second inserted layer comprising MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium, and X is an element selected from the group consisting of oxygen, nitrogen, and carbon,
a fourth magnetization fixed layer of ferromagnetic material on the second inserted layer, and
a second antiferromagnetic material layer containing manganese on the fourth magnetization fixed layer.
7. The tunnel magnetoresistance effect device of claim 5, wherein M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium, and the first inserted layer contains manganese.
8. The tunnel magnetoresistance effect device of claim 5, wherein the first inserted layer has an average thickness not thinner than 0.2 nanometers and not thicker than 2 nanometers.
9. A tunnel magnetoresistance effect device, comprising:
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer on the first magnetization fixed layer and comprising NX, where N is a first element, X is a second element selected from the group consisting of oxygen, nitrogen, and carbon, and the bonding energy between the first and second elements is higher than the bonding energy between manganese and the second element,
a second magnetization fixed layer of ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
10. The tunnel magnetoresistance effect device of claim 9, further comprising
a second tunnel barrier layer of dielectric material on the magnetization free layer,
a third magnetization fixed layer of ferromagnetic material on the second tunnel barrier layer,
a second inserted layer on the third magnetization fixed layer, and the second inserted layer comprising NX, where N is a first element, X is a second element selected from the group consisting of oxygen, nitrogen, and carbon, and the bonding energy between the first and second elements is higher than the bonding energy between manganese and the second element,
a fourth magnetization fixed layer of ferromagnetic material on the second inserted layer, and
a second antiferromagnetic material layer including manganese on the fourth magnetization fixed layer.
11. The tunnel magnetoresistance effect device of claim 9, wherein the first inserted layer contains manganese.
12. The tunnel magnetoresistance effect device of claim 9, wherein the first inserted layer has an average thickness not thinner than 0.2 nanometers and not thicker than 2 nanometers.
13. A tunnel magnetoresistance effect device, comprising:
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of a first ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer on the first magnetization fixed layer and comprising L1X, where L1 is a ferromagnetic element of the first ferromagnetic material or a ferromagnetic element of a second ferromagnetic material, and X is an element selected from the group consisting of oxygen, nitrogen, and carbon,
a second magnetization fixed layer of the second ferromagnetic material disposed on the first inserted layer,
a first tunnel barrier layer of ferromagnetic material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material disposed on the first tunnel barrier layer.
14. The tunnel magnetoresistance effect device of claim 13, further comprising
a second tunnel barrier layer of dielectric material on the magnetization free layer,
a third magnetization fixed layer of a third ferromagnetic material on the second tunnel barrier layer,
a second inserted layer disposed on the third magnetization fixed layer and comprising L2X, where L2 is a ferromagnetic element of the third ferromagnetic material or a ferromagnetic element of a fourth ferromagnetic material, and X is an element selected from the group consisting of oxygen, nitrogen, and carbon,
a fourth magnetization fixed layer of the fourth ferromagnetic material on the second inserted layer, and
a second antiferromagnetic material layer containing manganese on the fourth magnetization fixed layer.
15. The tunnel magnetoresistance effect device of claim 13, wherein the first inserted layer contains manganese.
16. The tunnel magnetoresistance effect device of claim 13, wherein the first inserted layer has an average thickness not thinner than 0.2 nanometers and not thicker than 2 nanometers.
17. A tunnel magnetoresistance effect device, comprising:
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer of an amorphous magnetic material on the first magnetization fixed layer,
a second magnetization fixed layer of ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
18. The tunnel magnetoresistance effect device of claim 17, further comprising
an antiferromagnetically coupling layer on the second magnetization fixed layer,
a third magnetization fixed layer of ferromagnetic material on the antiferromagnetically coupling layer,
a second inserted layer of an amorphous magnetic material on the third magnetization fixed layer, and
a fourth magnetization fixed layer of ferromagnetic material between the second inserted layer and the first dielectric tunnel barrier layer.
19. The tunnel magnetoresistance effect device of claim 17, further comprising
a second tunnel barrier layer of dielectric material on the magnetization free layer,
a third magnetization fixed layer of ferromagnetic material on the second tunnel barrier layer,
a second inserted layer of an amorphous magnetic material on the third magnetization fixed layer,
a fourth magnetization fixed layer of ferromagnetic material on the second inserted layer, and
a second antiferromagnetic material layer containing manganese on the fourth magnetization fixed layer.
20. The tunnel magnetoresistance effect device of claim 17, wherein the first inserted layer contains manganese.
21. The tunnel magnetoresistance effect device of claim 17, wherein the amorphous magnetic material is (CoFe)100-xYx or (CoFeNi)100-xYx, where Y is at least one element selected from the group consisting of B, Si, Zr, P, Mo, Al, and Nb.
22. A portable personal device, comprising
a memory device including a tunnel magnetoresistance effect device, comprising
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a second magnetization fixed layer of ferromagnetic material,
a first insulator layer between the first magnetization fixed layer, and the second magnetization fixed layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
23. A portable personal device, comprising
a memory device including a tunnel magnetoresistance effect device, comprising
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a fist inserted layer on the first magnetization fixed layer and comprising MX, where M is an element selected from the group consisting of manganese, titanium, tantalum, vanadium, aluminum, europium, and scandium, and X is an element selected from the group consisting of oxygen, nitrogen, and carbon,
a second magnetization fixed layer of ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
24. A portable personal device, comprising
a memory device including a tunnel magnetoresistance effect device, comprising
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer on the first magnetization fixed layer and comprising NX, where N is a first element, X is a second element selected from the group consisting of oxygen, nitrogen, and carbon, and the bonding energy between the first and second elements is higher than the bonding energy between manganese and the second element,
a second magnetization fixed layer of ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
25. A portable personal device, comprising
a memory device including a tunnel magnetoresistance effect device, comprising
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of a first ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer on the first magnetization fixed layer and comprising L1X, where L1 is a ferromagnetic element of the first ferromagnetic material or a ferromagnetic element of a second ferromagnetic material, and X is an element selected from the group consisting of oxygen, nitrogen, and carbon,
a second magnetization fixed layer of the second ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of ferromagnetic material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.
26. A portable personal device, comprising
a memory device including a tunnel magnetoresistance effect device, comprising
a first antiferromagnetic material layer containing manganese,
a first magnetization fixed layer of ferromagnetic material on the first antiferromagnetic material layer,
a first inserted layer of an amorphous magnetic material on the first magnetization fixed layer,
a second magnetization fixed layer of ferromagnetic material on the first inserted layer,
a first tunnel barrier layer of dielectric material on the second magnetization fixed layer, and
a magnetization free layer of ferromagnetic material on the first tunnel barrier layer.