Author: claimsbot

1. A handrail having a generally C-shaped cross-section and defining an internal generally T-shaped slot, the handrail comprising:
a) thermoplastic material extending around the T-shaped slot defining semi-circular lip portions having generally opposing end walls, and defining the exterior profile of the handrail;
b) a slider layer lining the T-shaped slot and bonded to the thermoplastic material; and
c) a cable array for inhibiting stretch, the cable array consisting of a plurality of longitudinal cables disposed along a central plane within the thermoplastic material, wherein outside cables of the cable array are offset inwardly in relation to the end walls of the lip portions.
2. The handrail of claim 1 wherein each of the plurality of cables has a diameter of 0.5 to 2 mm.
3. The handrail of claim 2 wherein the cable array has a width of 30 to 35 mm and a pitch of 1.5 to 2 mm.
4. The handrail of claim 3 wherein the slider layer includes edge portions extending out of the T-shaped slot and around the end walls of the lip portions.
5. A handrail having a generally C-shaped cross-section and defining an internal generally T-shaped slot, the handrail comprising:
d) a first layer of thermoplastic material extending around the T-shaped slot defining inner walls of semi-circular lip portions;
e) a second layer of thermoplastic material extending around the outside of the first layer and defining the exterior profile of the handrail and generally opposing end walls of the lip portions;
f) a slider layer lining the T-shaped slot and bonded to the first layer; and
g) a stretch inhibitor disposed along a plane within the first layer.
6. The handrail of claim 5 wherein the first layer tapers in thickness around the lip portions and does not extend substantially below a bottom plane of the T-shaped slot.
7. The handrail of claim 6 wherein the first layer terminates along the inner walls of the lip portions.
8. The handrail of claim 7 wherein the handrail comprises an upper portion above the T-shaped slot and within the upper portion the first layer is thicker than the second layer.
9. The handrail of claim 8 wherein the first layer comprises at least 60% of the thickness of the handrail in the upper portion.
10. The handrail of claim 9 wherein the upper portion has a thickness of approximately 10 mm and the first layer is at least 6 mm thick.
11. The handrail of claim 10 wherein the first layer is formed from a harder thermoplastic than the second layer.
12. The handrail of claim 10, wherein the first layer has a hardness in the range 40 to 50 Shore \u2018D\u2019, the second layer has a hardness in the range 70 to 85 Shore \u2018A\u2019 and the slider layer has a modulus of 150 to 250 MPa.
13. The handrail of claim 11 wherein the slider layer includes edge portions extending out of the T-shaped slot and around the end walls of the lip portions.
14. A handrail having a generally C-shaped cross-section and defining an internal generally T-shaped slot, the handrail comprising:
h) a first layer of thermoplastic material extending around the T-shaped slot defining inner walls of semi-circular lip portions;
i) a second layer of thermoplastic material extending around the outside of the first layer and defining the exterior profile of the handrail and generally opposing end walls of the lip portions;
j) a slider layer lining the T-shaped slot and bonded to the first layer; and
k) a cable array for inhibiting stretch, the cable array consisting of a plurality of longitudinal cables arranged along a central plane within the first layer, wherein outside cables in the cable array are offset inwardly in relation to the end walls of the lip portions.
15. A handrail having a generally C-shaped cross-section and defining an internal generally T-shaped slot, the handrail comprising:
l) a first layer of thermoplastic material extending around the T-shaped slot;
m) a second layer of thermoplastic material extending around the outside of the first layer and defining the exterior profile of the handrail;
n) a slider layer lining the T-shaped slot and bonded to the first layer; and
o) a cable array for inhibiting stretch, the cable array consisting of a plurality of longitudinal cables arranged along a central plane within the first layer, wherein each of the longitudinal cables including a plurality of relatively larger outer strands and a plurality of relatively small inner strands.
16. The handrail of claim 15, wherein each cable has an outer diameter of about 1.15 mm.
17. The handrail of claim 15 or 16 wherein each cable consists of 6 outer stands and 3 inner strands.
18. The handrail of claim 17 wherein the outer strands have a diameter of approximately 0.36 mm.
19. The handrail of claim 17, wherein the inner strands have a diameter of approximately 0.2 mm.
20. The handrail of claim 19 wherein the cables are formed of high tensile steel.
21. The handrail of claim 20, wherein the cables are brass plated.
22. A handrail having a generally C-shaped cross-section and defining an internal generally T-shaped slot, the handrail comprising:
p) a first layer of thermoplastic material extending around the T-shaped slot defining inner walls of semi-circular lip portions;
q) a second layer of thermoplastic material extending around the outside of the first layer and defining the exterior profile of the handrail and generally opposing end walls of the lip portions;
r) a slider layer lining the T-shaped slot and bonded to the first layer; and
s) a cable array for inhibiting stretch, the cable array consisting of a plurality of longitudinal cables disposed along a central plane within the first layer, wherein outside cables of the cable array are offset inwardly in relation to the end walls of the lip portions, and wherein each of the longitudinal cables including a plurality of relatively larger outer strands and a plurality of relatively small inner strands.
23. (canceled)

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor package, comprising:
a first heat radiating plate;
a second heat radiating plate formed below the first heat radiating plate;
a heat radiating lead formed above the first heat radiating plate and having both ends contacted with the second heat radiating plate;
an insulating layer formed above the heat radiating lead;
at least one power device formed above the insulating layer; and
at least one control device formed above the insulating layer.
2. The semiconductor package as set forth in claim 1, further comprising a mold covering the first heat radiating plate, the insulating layer, the power device, and the control device.
3. The semiconductor package as set forth in claim 2, further comprising a connection lead having one end formed between at least one of the power device and the control device and the insulating layer and the other end formed to be exposed out of the mold.
4. The semiconductor package as set forth in claim 1, wherein the heat radiating lead includes:
a first heat radiating lead formed below the insulating layer correspondingly to a region where the power device is mounted; and
a second heat radiating lead formed below the insulating layer correspondingly to a region where the control device is mounted,
the first heat radiating lead and the second heat radiating lead being connected to each other.
5. The semiconductor package as set forth in claim 1, wherein the heat radiating lead includes:
a first heat radiating lead formed below the insulating layer correspondingly to a region where the power device is mounted; and
a second heat radiating lead formed below the insulating layer correspondingly to a region where the control device is mounted,
the first heat radiating lead and the second heat radiating lead being separated from each other.
6. The semiconductor package as set forth in claim 1, wherein the first heat radiating plate is formed of aluminum.
7. The semiconductor package as set forth in claim 1, wherein the heat radiating lead is formed of copper.
8. The semiconductor package as set forth in claim 2, wherein the mold is formed of an epoxy mold compound (EMC) or a silicon gel.
9. The semiconductor package as set forth in claim 1, further comprising an adhesive layer formed between the first heat radiating plate and the second heat radiating plate.
10. The semiconductor package as set forth in claim 9, wherein the adhesive layer is formed of thermal grease.
11. The semiconductor package as set forth in claim 3, wherein the connection lead is formed of a conductive metal.

1. A method for processing a substrate, comprising:
performing an etch process on a substrate in a first chamber wherein the etch process comprises exposing one or more layers of a film stack to etchants comprising at least one halogen-containing gas;
after performing the etch process, transferring the substrate into a second chamber;
performing a treating process on the substrate in the second chamber, wherein the treating process comprises distributing a processing gas into the second chamber through a gas distribution plate and removing halogen-containing etch residues from the substrate;
transferring the substrate out of the second chamber; and
providing a purge gas into the second chamber during at least one of transferring the substrate into or out of the second chamber, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate.
2. The method of claim 1, wherein providing the purge gas comprises:
providing nitrogen gas or an inert gas into the second chamber.
3. The method of claim 1, comprising:
providing purge gas into the second chamber before the substrate is transferred into the second chamber.
4. The method of claim 1, wherein the purge gas is provided into the second chamber from a time that process gas flow is terminated until process gas flow resumes.
5. The method of claim 1, wherein the purge gas is provided into the second chamber below the substrate support.
6. The method of claim 1, wherein the purge gas is provided at a flow rate of at least about 5000 sccm.
7. The method of claim 1, wherein the treating process comprises:
removing photoresist from the substrate.
8. The method of claim 1, wherein transferring the substrate out of the second chamber further comprises:
transferring the substrate to a factory interface.
9. A method for processing a substrate comprising:
performing an etch process on a substrate in an etch chamber wherein the etch process comprises exposing one or more layers of a film stack to etchants comprising at least one halogen-containing gas;
transferring the substrate into a first chamber of a chamber body, the chamber body having a second chamber;
performing a treating process on the substrate in the first chamber, wherein the treating process comprises distributing a processing gas into the first chamber through a gas distribution plate and removing halogen-containing etch residues from the substrate;
transferring the substrate out of the first chamber;
providing a purge gas into the first chamber during at least one of the transferring of the substrate into or out of the first chamber, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate; and
transferring the substrate into the second chamber.
10. The method of claim 9, wherein providing the purge gas comprises providing the purge gas through the gas distribution plate and through a port positioned below the gas distribution plate.
11. The method of claim 9, wherein the purge gas is provided at a flow rate of at least about 5000 sccm.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An agent for removing at least one pollutant from a gas comprising a wax which has a drop melting point between 40 and 150\xb0 C., a melt viscosity of 2 to 20 000 mPas, and a needle penetration of 1 to 50 and which contains at least one alkoxylated compound.
2. The agent as claimed in claim 1, wherein the at least one pollutant is selected from the group consisting of nicotine, tobacco, combustion products, ozone and formaldehyde.
3. The agent as claimed in claim 1, wherein the wax contains 0.5 to 99.5% by weight of an alkoxylated montan acid as the alkoxylated compound.
4. The agent as claimed in claim 1, wherein the wax contains 0.5 to 99.5% by weight of an alkoxylate of an unbranched or branched, monohydric or polyhydric alcohol having 20 to 40 carbon atoms.
5. The agent as claimed in claim 1, wherein the wax contains 0.5 to 99.5% by weight of the water-soluble ethylene oxide-propylene oxide adduct to a monohydric or polyhydric alcohol having 1 to 40 carbon atoms.
6. The agent as claimed in claim 1, wherein the wax contains up to 30% by weight of alcohols which have 4 to 12 carbon atoms and 1, 2 or 3 OH groups.
7. A process for purifying a gas from at least one pollutant by adsorption, comprising the step of bringing the gas to be purified into contact with an agent according to claim 1.
8. A gas purification system comprising an agent according to claim 1.
9. A wax which has a drop melting point between 40 and 150\xb0 C., a melt viscosity of 2 to 20 000 mPas and a needle penetration of 1 to 50 comprising:
a) 0.5 to 99.5% by weight of an alkoxylated montan acid, and
b) 0.5 to 99.5% by weight of an alkoxylate of an unbranched or branched, monohydric or polyhydric alcohol having 20 to 40 carbon atoms.
10. The wax as claimed in claim 9, further comprising 0.5 to 99.5% by weight of a water-soluble ethylene oxide-propylene oxide adduct to a monohydric or polyhydric alcohol having 1 to 40 carbon atoms, or to water.
11. The wax as claimed in claim 9, further comprising up to 30% by weight of alcohols which have 4 to 12 carbon atoms and 1, 2 or 3 OH groups.
12. A process for purifying a gas from at least one pollutant by adsorption, comprising the step of bringing the gas to be purified into contact with a wax according to claim 9.
13. A gas purification system comprising a wax according to claim 9.