1. A semiconductor package, comprising:
a semiconductor substrate having a plurality of transistors;
an intermediate routing structure to provide electrical interconnects to the plurality of transistors, the intermediate routing structure including an outermost conductive layer;
a passivation layer formed over the intermediate routing structure, the passivation layer having a plurality of openings positioned over a portion of the intermediate layer routing structure; and
an under-bump-metallization (UBM) stack formed over the passivation layer and electrically connected to the outermost conductive layer through the plurality of openings in the passivation layer, wherein a portion of the UBM stack over the passivation layer that is not covered by an insulative layer electrically connects portions of the UBM stack that extend through different openings of the plurality of openings in the passivation layer.
2. The semiconductor package of claim 1, wherein the portions of the UBM stack that extend through different openings of the plurality of openings in the passivation layer are electrically connected by the intermediate routing structure to sources of transistors.
3. The semiconductor package of claim 1, wherein the portions of the UBM stack that extend through different openings of the plurality of openings in the passivation layer are electrically connected by the intermediate routing structure to drains of transistors.
4. The semiconductor package of claim 1, further comprising a conductive bump positioned on and directly contacting the UBM stack.
5. The semiconductor package of claim 4, wherein the conductive bump is positioned such that at least one opening of the plurality of openings is not directly under a region of contact between the conductive bump and the UBM stack and at least another opening of the plurality of openings is directly under the region of contact between the conductive bump and the UBM stack.
6. The semiconductor package of claim 1, wherein UBM stack includes a conductive base layer and a conductive layer formed on the conductive base layer, and wherein the conductive base layer extends into the plurality of openings to contact the outermost conductive layer.
7. The semiconductor package of claim 6, wherein the conductive base layer is formed directly on the passivation layer.
8. The semiconductor package of claim 6, further comprising a contact layer formed on the passivation layer, the contact layer extending into the plurality of openings to contact the outermost conductive layer.
9. The semiconductor package of claim 8, wherein the conductive base layer is formed on the contact layer.
10. The semiconductor package of claim 6, wherein the conductive base layer includes at least one material selected from titanium or a nickel-vanadium alloy.
11. The semiconductor package of claim 10, wherein the conductive base layer consists of titanium and the conductive layer consists of copper.
12. The semiconductor package of claim 6, further comprising a seed layer formed between the conductive base layer and the conductive layer.
13. The semiconductor package of claim 12, wherein the seed layer includes a same composition as the conductive layer.
14. The semiconductor package of claim 13, wherein the seed layer and the conductive layer consist of copper.
15. The semiconductor package of claim 6, wherein the conductive layer is thicker than the base layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A toughened polymer composition which comprises a reacted mixture of:
(a) a polyhydroxyalkanoate (PHA) polymer;
(b) a maleated polybutadiene rubber;
(c) an epoxidized natural or synthetic rubber; and
(d) a clay which has been modified by reaction with a titanate coupling agent containing 48 to 60 carbon atoms to form a titanium alkyl group from a hydroxyl group on the clay, wherein the mixture has been reactively blended in proportions to produce a polymer which is toughened in relation to PHA alone.
2. The composition of claim 1 comprising without the clay:
(a) between about 50 and 60 parts by weight of the polyhydroxyalkanoate (PHA) polymer having a molecular weight between about 100,000 and 1,000,000 and repeating alkanoate units having 1 to 8 carbon atoms;
(b) between about 5 and 20 parts by weight of the maleated polybutadiene rubber having a molecular weight between about 1500 and 7500; and
(c) between about 10 and 40 parts by weight of the epoxidized natural or synthetic rubber.
3. The composition of claim 1 wherein the PHA is polyhydroxybutyrate (PHB).
4. The composition of claims 1 or 2 wherein the metal coupling agent is the titanate coupling agent containing 60 carbon atoms.
5. The composition of claims 1 or 2 wherein the clay is modified by addition of 1 to 15 parts by weight of the titanate coupling agent per part of the clay.
6. The composition of claims 1 or 2 wherein the clay is modified in an aromatic solvent.
7. The composition of claims 1 or 2 wherein the clay is modified in an aliphatic solvent.
8. The composition of claims 1 or 2 wherein the clay is modified by a solvent-less reaction.
9. The composition of claims 1 or 2 wherein the clay is modified by a reaction which atomizes and sprays the coupling agent directly onto the clay.
10. A process for producing a toughened polymer which comprises reactively blending an admixture of:
(a) a polyhydroxy alkoxide (PHA) polymer:
(b) a maleated polybutadiene rubber;
(c) an epoxidized natural or synthetic rubber; and
(d) a clay which is an organic onium ion modified clay which has been modified by reaction with a titanate coupling agent containing 48 to 60 carbon atoms, wherein the composition has been reactively blended in proportions to produce a polymer which is toughened in relation to PHA alone.
11. The process of claim 10 for producing the toughened polymer which comprises without the clay:
(a) between about 50 and 60 parts by weight of the polyhydroxyalkanoate (PHA) polymer having a molecular weight between about 100,000 and 1,000,000 and repeating alkanoate units having 1 to 8 carbon atoms;
(b) between about 5 and 20 parts by weight of the maleated polybutadiene rubber having a molecular weight between about 1500 and 7500; and
(c) between about 10 and 40 parts by weight of the epoxidized natural or synthetic rubber.
12. The process of claim 11 wherein the PHA is polyhydroxybutyrate (PHB).
13. The process of claim 11 wherein between 10 and 30 parts by weight of a plasticizer is blended in the admixture.
14. The process of claim 10 wherein the modified clay is a quaternary ammonium modified clay.
15. The process of claim 10 wherein the metal coupling agent is the titanate coupling agent containing 60 carbon atoms.
16. The process of claim 10 wherein the clay is modified by addition of 1 to 15 parts by weight of the clay of the titanate coupling agent.
17. The process of claim 10 wherein the clay is modified in an aromatic solvent.
18. The process of claim 10 wherein the clay is modified in an aliphatic solvent.
19. The process of claim 10 wherein the clay is modified in a solvent-less reaction.
20. The process of claim 10 wherein the clay is modified by a reaction which atomizes and sprays the titanate coupling agent directly onto the clay.