Author: claimsbot

1. A field effect transistor structure comprising:
a semiconductor layer having end portions and a center portion between said end portions, said center portion having an area that extends laterally beyond said end portions and said center portion comprising:
a channel region between said end portions, said channel region being doped with a first conductivity type dopant such that said channel region has a first conductivity type; and
a gate-to-body tunnel current region in said area that extends laterally beyond said end portions, said gate-to-body tunnel current region comprising:
a first implant region immediately adjacent to said channel region and doped with said first conductivity type dopant at a higher concentration than said channel region;
a second implant region adjacent to said first implant region and doped with a second conductivity type dopant different from said first conductivity type dopant such that said second implant region has a second conductivity type different from said first conductivity type; and
an enhanced generation and recombination region at a junction between said first implant region and said second implant region; and
a gate structure traversing said center portion.
2. The field effect transistor of claim 1, said enhanced generation and recombination region comprising a third implant region overlapping said first implant region and said second implant region.
3. The field effect transistor of claim 1, said enhanced generation and recombination region comprising a metal layer extending vertically between said first implant region and said second implant region.
4. The field effect transistor structure of claim 1, said gate structure comprising: a gate dielectric layer on a top surface of said semiconductor layer, said gate dielectric layer comprising:
a first dielectric section above said second implant region and said enhanced generation and recombination region of said gate-to-body tunnel current region; and
a second dielectric section above said first implant region of said gate-to-body tunnel current region and above said channel region, said first dielectric section and said second dielectric section having any of different thicknesses and different dielectric constants.
5. The field effect transistor structure of claim 4, said gate structure comprising a gate conductor layer, having different sections with different work functions, on said gate dielectric layer above said channel region and said gate-to-body tunnel current region, respectively.
6. The field effect transistor structure of claim 4, said gate structure comprising a gate conductor layer comprising a first conductive section above said gate-to-body tunnel current region and having said first conductivity type and a second conductive section above said channel region and having said second conductivity type.
7. The field effect transistor of claim 1, further comprising a trench isolation structure laterally surrounding said semiconductor layer such that said trench isolation structure is positioned laterally immediately adjacent to three sides of said area that extends laterally beyond said end portions.
8. A field effect transistor structure comprising:
a semiconductor layer having end portions and a center portion between said end portions, said center portion having an area that extends laterally beyond said end portions and said center portion comprising:
a channel region between said end portions, said channel region being doped with a first conductivity type dopant such that said channel region has a first conductivity type; and
a gate-to-body tunnel current region in said area that extends laterally beyond said end portions, said gate-to-body tunnel current region comprising:
a first implant region immediately adjacent to said channel region and doped with said first conductivity type dopant at a higher concentration than said channel region;
a second implant region adjacent to said first implant region and doped with a second conductivity type dopant different from said first conductivity type dopant such that said second implant region has a second conductivity type different from said first conductivity type; and
an enhanced generation and recombination region at a junction between said first implant region and said second implant region; and
a gate structure traversing said center portion, said gate structure comprising a gate conductor layer comprising:
a first conductive section above said gate-to-body tunnel current region and having said first conductivity type; and
a second conductive section positioned laterally adjacent to said first conductive section above said channel region and having said second conductivity type.
9. The field effect transistor of claim 8, said enhanced generation and recombination region comprising a third implant region overlapping said first implant region and said second implant region.
10. The field effect transistor of claim 8, said enhanced generation and recombination region comprising a metal layer extending vertically between said first implant region and said second implant region.
11. The field effect transistor structure of claim 8, said gate structure further comprising a gate dielectric layer between said center portion and said gate conductor layer.
12. The field effect transistor of claim 11, said gate dielectric layer comprising:
a first dielectric section above said second implant region and said enhanced generation and recombination region of said gate-to-body tunnel current region; and
a second dielectric section above said first implant region of said gate-to-body tunnel current region and above said channel region, said first dielectric section and said second dielectric section having any of different thicknesses and different dielectric constants.
13. The field effect transistor of claim 8, further comprising a trench isolation structure laterally surrounding said semiconductor layer such that said trench isolation structure is positioned laterally immediately adjacent to three sides of said area that extends laterally beyond said end portions.
14. A method of forming a field effect transistor structure, said method comprising:
providing a semiconductor layer doped with a first conductivity type dopant such that said semiconductor layer has said first conductivity type, said semiconductor layer further having end portions and a center portion between said end portions, and said center portion having an area that extends laterally beyond said end portions;
forming a gate-to-body tunnel current region in said area that extends laterally beyond said end portions, said forming of said gate-to-body tunnel current region comprising:
forming a first implant region in said area immediately adjacent to a designated channel region in said center portion between said end portions, said first implant region being doped with said first conductivity type dopant at a higher concentration than said channel region;
forming a second implant region adjacent to said first implant region, said second implant region being doped with a second conductivity type dopant different from said first conductivity type dopant such that said second implant region has a second conductivity type different from said first conductivity type; and
forming an enhanced generation and recombination region at a junction between said first implant region and said second implant region; and
forming a gate structure traversing said center portion.
15. The method of claim 14, said forming of said enhanced generation and recombination region comprising forming a third implant region overlapping said first implant region and said second implant region.
16. The method of claim 14, said forming of said enhanced generation and recombination region comprising:
after said forming of said first implant region and said second implant region, forming an opening in said semiconductor layer extending vertically through said junction between said first implant region and said second implant region; and
forming a metal layer in said opening.
17. The method of claim 14, said forming of said gate structure comprising forming a gate dielectric layer on a top surface of said semiconductor layer, said forming of said gate dielectric layer comprising:
forming a first dielectric section above said second implant region and said enhanced generation and recombination region of said gate-to-body tunnel current region; and
forming a second dielectric section above said first implant region of said gate-to-body tunnel current region and above said channel region, said first dielectric section being different from said second dielectric section.
18. The method of claim 17, said first dielectric section and said second dielectric section being formed so as to have any of different thicknesses and different dielectric constants.
19. The method of claim 17, said forming of said gate structure comprising forming a gate conductor layer on said gate dielectric layer such that said gate conductor layer comprises different sections with different work functions above said gate-to-body tunnel current region and above said channel region.
20. The method of claim 17, said forming of said gate structure comprising forming a gate conductor layer on said gate dielectric layer such that said gate conductor layer comprises:
a first conductive section above said gate-to-body tunnel current region and having said first conductivity type; and
a second conductive section above said channel region and having said second conductivity type.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A steering apparatus comprising: a steering shaft which is formed of a shaft section and a yoke section; an inner column which supports the steering shaft via a bearing; an outer column which embraces the inner column and which has an embracing inner circumferential surface with a same diameter along an axial direction; a fixing bracket which has fixing side sections sandwiching both sides of the outer column in a width direction; and a tightener which tightens and releases the outer column together with the fixing bracket, wherein the inner column has an embraced cylindrical section that is embraced by the outer column, a relief section having an outer diameter formed smaller than other portions of the embraced cylindrical section is formed in a middle region in the axial direction of the embraced cylindrical section, and the bearing that pivotally supports the steering shaft is fixed to an inner circumferential side of the relief section.
2. The steering apparatus according to claim 1, wherein both sides of the relief section in the axial direction are arranged as conical slope sections.
3. The steering apparatus according to claim 1, wherein the relief section is formed at a position of the embraced cylindrical section toward the front in the axial direction, and the front of the relief section in the axial direction constitutes a yoke housing cylindrical section that houses the yoke section of the steering shaft.
4. The steering apparatus according to claim 1, wherein a telescoping-enabling long hole is formed in the embraced cylindrical section, and a knock pin that protrudes from the embracing inner circumferential surface is mounted on the outer column and inserted into the telescoping-enabling long hole.
5. The steering apparatus according to claim 2, wherein the relief section is formed at a position of the embraced cylindrical section toward the front in the axial direction, and the front of the relief section in the axial direction constitutes a yoke housing cylindrical section that houses the yoke section of the steering shaft.
6. The steering apparatus according to claim 2, wherein a telescoping-enabling long hole is formed in the embraced cylindrical section, and a knock pin that protrudes from the embracing inner circumferential surface is mounted on the outer column and inserted into the telescoping-enabling long hole.
7. The steering apparatus according to claims 3, wherein a telescoping-enabling long hole is formed in the embraced cylindrical section, and a knock pin that protrudes from the embracing inner circumferential surface is mounted on the outer column and inserted into the telescoping-enabling long hole.
8. The steering apparatus according to claim 5, wherein a telescoping-enabling long hole is formed in the embraced cylindrical section, and a knock pin that protrudes from the embracing inner circumferential surface is mounted on the outer column and inserted into the telescoping-enabling long hole.

What is claimed is:

1. A tag for identifying instruments, the tag comprising:
a body having:
an insertion portion configured to be received within an instrument-holding device; and
a labeling panel configured to be selectively marked with user-selected identification information.
2. The tag of claim 1, wherein the instrument-holding device includes a cushion, and the insertion portion is configured for receipt within the cushion.
3. The tag of claim 1, wherein the labeling panel is adapted to be selectively marked with a marking instrument.
4. The tag of claim 1, wherein the user-selected identification information is client-identity information.
5. The tag of claim 1, wherein the user-selected identification information is provider-identity information.
6. The tag of claim 1 further comprising at least one use tab configured to indicate instrument usage.
7. The tag of claim 6, wherein the at least one use tab is removable.
8. The tag of claim 1, wherein the body is adapted to withstand a steam autoclave.
9. The tag of claim 1, wherein the body is color-coded.
10. The tag of claim 1, wherein the body may be selectively released from a packaging ring.
11. An identification tag for a dental servicing system configured to receive instruments, the identification tag comprising:
an insertion portion configured to be removably inserted within a cushion of the dental servicing system;
a labeling portion configured to be selectively marked with user-selected identification information; and
a use tab configured to indicate instrument usage.
12. The identification tag of claim 11, further comprising a plurality of removable use tabs, wherein each use tab may be selectively removed to indicate the number of times the instruments have been used.
13. The identification tag of claim 11, wherein the insertion portion is configured to be substantially secured within the cushion adjacent the instruments.
14. The identification tag of claim 11, wherein the identification tag is configured to withstand steam autoclaving.
15. An identification tag for identifying an instrument set, the identification tag comprising:
means for positioning the identification tag substantially adjacent an instrument set;
means for selectively labeling the identification tag with identification information.
16. The identification tag of claim 15, further comprising a means for indicating the number of uses of the instrument set.
17. A method of organizing an instrument set, the method comprising:
selecting an instrument-holding device;
selecting a visually-coded identification tag; and
inserting the visually-coded identification tag into the instrument-holding device to identify an instrument set within the instrument-holding device.
18. The method of claim 17, wherein the instrument-holding device includes a cushion and a socket-forming member and wherein selecting an instrument-holding device includes selecting at least one of a visually-coded cushion and a visually-coded socket-forming member.
19. The method of claim 16, wherein selecting a visually-coded identification tag includes selecting a color-coded identification tag.
20. The method of claim 16, further comprising marking the visually-coded identification tag with user-selected identification information.
21. A kit for organizing instrument sets, the kit comprising:
a visually-coded instrument-holding device; and
a visually-coded identification tag, wherein the visually-coded identification tag is adapted to be received within the visually-coded instrument-holding device.
22. The kit of claim 21, wherein the instrument-holding device includes at least one of a color-coded cushion and a color-coded socket-forming member.
23. The kit of claim 21, wherein the visually-coded identification tag includes a labeling panel configured to be selectively marked with user-selected identification information.
24. The kit of claim 21, wherein the visually-coded identification tag is color coded.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A two-part hair dye comprising a first part containing an alkali agent, a second part containing hydrogen peroxide, and a non-aerosol foamer vessel to discharge in the form of foam a liquid mixture of the first part and the second part, wherein the liquid mixture comprises an anionic surfactant selected from the following components (A1) to (A3):
(A1) a carboxylate type anionic surfactant;
(A2) a sulfonate type anionic surfactant; and
(A3) a phosphate type anionic surfactant.
2. The two-part hair dye according to claim 1, wherein the liquid mixture of the first part and the second part further comprises a higher alcohol.
3. A two-part hair dye comprising a first part containing an alkali agent, a second part containing hydrogen peroxide, and a non-aerosol foamer vessel to discharge in the form of foam a liquid mixture of the first part and the second part, wherein the liquid mixture comprises the following components (A4) and (A5):
(A4) an ionic surfactant; and
(A5) a fatty acid alkanolamide.
4. The two-part hair dye according to claim 3, wherein the liquid mixture of the first part and the second part comprise a higher alcohol with an allowable content of 0 to 0.8% by mass.
5. A method for dyeing hair, comprising the steps of discharging in the form of foam the liquid mixture in the two-part hair dye according to any one of claims 1 to 4 from a non-aerosol foamer vessel; applying the foam to the hair; and foaming again the foam on the hair.